| Fulltext Datasheet Results |
1 - 50 of about 10000+ for switching |
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First line: on off SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) SWITCHING LOSS COLLECTOR CURRENT (TYPICAL) 2250V 125°C 180nH ESW(on) ESW(off) Inductive Load Abstract: .. COLLECTOR CURRENT, IC, AMPERES SWITCHING LOSS, E. SW on , E SW off , J/PULSE SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL 0 1800 1200 600 300 900 1500 0. 4. 6. 5. 1. 2. 3. 7. VCC = 2250V VGE = 15V Tj = 125 .. Tags: on off datasheet abstract.. |
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First line: Switching Diode "Switching Diodes" diodes band switching diode Band switching diode 1SS390 FApplications High frequency switching Abstract: .. Band switching diode 1SS390. Applications High frequency switching. Features 1 Extremely small surface mounting type. EMD2 2 High reliability. Construction Silicon epitaxial planar. Absolute .. Tags: band switching diode "Switching Diodes" transistors planar switching transistor data book switching transistor SWITCHING DIODE switching switch diode SILICON SWITCHING DIODE silicon diode electrical Diodes datasheet diodes 1SS390 |
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First line: SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) SWITCHING LOSS COLLECTOR CURRENT (TYPICAL) 2250V 125°C 180nH ESW(on) ESW(off) Inductive Load Abstract: .. COLLECTOR CURRENT, IC, AMPERES SWITCHING LOSS, E. SW on , E SW off , J/PULSE SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL 0 1200 900 600 300 0. 4.0. 3.0. 1.0. 2.0. 5.0. VCC = 2250V VGE = 15V Tj = 125 .. Tags: datasheet abstract.. |
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First line: switch microsecond radar radar circuit DSW16285 High-Power SPST Switch Operating Frequency: Power: Watts Isolation: Switching Speed: microsecond Power: Small Package: 1.0" 1.5" 0.34" High Abstract: .. Switching Speed: 1 microsecond. DC Power: 70 mA at +15 VDC. Small Package: 1.0” X 1.5” X 0.34” High. DSW16285 High-Power SPST Switch. Application - Rugged Military Radar. .. Tags: radar circuit microsecond switching transistor switching switch SPST RF Transistors RF power transistors RF POWER rf diodes Radar* power switching power switch DSW16285 |
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First line: DAP236U* diodes Band switching diode DAP236U DAP236K FApplications High frequency switching FExternal dimensions (Units: Abstract: .. Band switching diode DAP236U / DAP236K. Applications High frequency switching. Features 1 Multiple diodes with common anode configuration. 2 High reliability. Construction Silicon epitaxial .. Tags: DAP236U* transistors planar switching transistor switching switch diode Diodes datasheet diodes diode datasheet diode DAP236K band switching diode DAP236U DAP236K |
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First line: silicon diode diodes Low-leakage switching diode 1SS380 FApplications leakage switching FExternal dimensions (Units: Abstract: .. Low-leakage switching diode 1SS380. Applications Low leakage switching. Features 1 High reliability. 2 Small surface mounting type. UMD2 3 The typical reverse current is extremely low .. Tags: diodes UMD2 typical diode transistors planar switching transistor switching SILICON SWITCHING DIODE low-leakage silicon diode diode silicon diode datasheet diode 1SS380 |
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First line: SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) SWITCHING LOSS COLLECTOR CURRENT (TYPICAL) 2250V 125°C 22.5 180nH ESW(on) ESW(off) Inductive Load Abstract: .. COLLECTOR CURRENT, IC, AMPERES SWITCHING LOSS, E. SW on , E SW off , J/PULSE SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL 0 800 600 400 200 0. 4.0. 3.0. 1.0. 2.0. 5.0. VCC = 2250V VGE = 15V Tj = 125 .. Tags: datasheet abstract.. |
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First line: 1ss355 diodes High-Speed Switching Diode 1SS355 FApplications High speed switching FExternal dimensions (Units: Abstract: .. High‐Speed Switching Diode 1SS355. Applications High speed switching. Features Small surface mounting type. UMD2 High speed. trr=1.2ns Typ. High reliability with high surge current handling .. Tags: switching transistor data book switching transistor switching high speed transistor High speed switching Transistor High Current Switching Applications diodes 1ss355 1SS355 |
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First line: diodes diode High-voltage switching diode 1SS244 FApplications High voltage switching General purpose rectification FExternal dimensions (Units: Abstract: .. High‐voltage switching diode 1SS244. Applications High voltage switching General purpose rectification. Features High reliability. Glass sealed envelope. MSD VRM=250V Guaranteed. Construction .. Tags: diodes transistors planar switching SILICON GENERAL Rectification High Voltage Switching Diode high voltage diode High voltage general purpose of SILICON diode epitaxial transistor high voltage diode silicon 1SS244 1SS244 |
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First line: Diodes High-speed switching diode 1SS400 FApplications High speed switching Abstract: .. High‐speed switching diode 1SS400. Applications High speed switching. Features 1 Extremely small surface mounting type. EMD2 2 High speed. typical recovery time = 1.2ns 3 Highly reliable .. Tags: switching transistor switching diodes 1SS400 |
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First line: 300V switching transistor diodes High-voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions (Units: Abstract: .. High‐voltage band switching diode 1SS376. Applications High voltage switching. Features High reliability. Small surface mounting type. UMD2 Reak reverse voltage guaranteed at 300V with .. Tags: diodes switching transistor switching High Voltage Switching Diode High voltage epitaxial transistor high voltage diode 300V switching transistor 1SS376 1SS376 |
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First line: diode Schottky -20/USD1120 diode diodes -4R50 diode diode RB715F FApplications General purpose detection High speed switching FExternal dimensions (Units: Abstract: .. Applications General purpose detection High speed switching. Features 1 2 High reliability. Low reverse current and low forward voltage. Construction Silicon epitaxial planar. Absolute .. Tags: -4R50 diode -20/USD1120 diode diode Schottky transistors planar The Diode Data Book switching transistor switching SILICON SWITCHING DIODE SILICON GENERAL Schottky Diodes Schottky diode low voltage Schottky diode schottky barrier diodes Schottky Barrier Diode RB715F |
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First line: bipolar transistor transisto* transistor* ignition BIPOLAR TRANSISTORS Multi-epitaxial Planar THERMAL OXIDE P-VAPOX Abstract: .. Applications DC/DC Converter General Fast Switching Motor Drive Horizontal Deflection Electronic Ignition. Features Icm up to 70A Vceo up to 450V More than 100 silicon lines Variety of package .. Tags: transisto* bipolar transistor transistors planar transistors equivalent transistors transistor* thermal transistor switching transistor switching SILICON GENERAL motor ignition DRIVE ignition* datasheet abstract.. |
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First line: Battery Charger Adapter, Focus 2210 Series Adapter, Charger Adapter, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply Abstract: .. Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply. Switching Power Supply Battery Charger ~ Focus - 2210. Switching Power .. Tags: datasheet abstract.. |
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First line: 1ss133 diodes equivalent diode for 1ss133 High-speed switching diode 1SS133 FApplications High speed switching FExternal dimensions (Units: Abstract: .. High‐speed switching diode 1SS133. Applications High speed switching. Features 1 Glass sealed envelope. MSD 2 High reliability. 3 High speed. typical recovery time = 1.5ns Construction .. Tags: equivalent diode for 1ss133 diodes transistors planar SWITCHING DIODE switching diode datasheet diode band switching diode 1ss133 High-Speed 1SS133 |
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First line: 200NH* 200NH SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) SWITCHING LOSS COLLECTOR CURRENT (TYPICAL) 125°C 200nH ESW(on) ESW(off) Inductive Load 1500V 1250V Abstract: .. COLLECTOR CURRENT, IC, AMPERES SWITCHING LOSS, E. SW on , E SW off , J/PULSE SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL 0 500 400 300 200 100 0. 0.6. 0.8. 0.2. 0.4. 1.0. VGE = 15V Tj = 125°C RG = 7 .. Tags: 200NH 200NH* datasheet abstract.. |
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First line: band switching diode DAN235K diodes Band switching diode array DAN235E DAN235U DAN235K FApplications High frequency switching FExternal dimensions (Units: Abstract: .. Band switching diode array DAN235E / DAN235U / DAN235K. Applications High frequency switching. Features 1 Multiple diodes with common cathode configuration. 2 High reliability. Construction .. Tags: diodes transistors planar switching diode datasheet datasheet diode DAN235K DAN235E band switching diode ARRAY DIODE "switching Diode" DAN235E DAN235U DAN235K |
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First line: igbt Turn-off ir igbt ir igbt Turn-off SWITCHING ENERGY 250V CLASS H-SERIES IGBT MODULE CM600HA-5F Abstract: .. SWITCHING ENERGY 250V CLASS H-SERIES IGBT MODULE. .. Tags: Turn-off ir igbt ir igbt Turn-off igbt CM600HA-5F |
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First line: welding igbt 600V welding inverter GenX3TM igbt welding RUGGED IGBTs SWITCHING POWER GenX3TM 600V IGBT Optimized switching conduction losses Square RBSOA High current handling capability International standard packages Abstract: .. RUGGED IGBTs FOR SWITCHING POWER. FEaTURES. Optimized for low switching & conduction losses. Square RBSOA. High current handling capability. International standard packages. aPPlICaTIONS. Power .. Tags: igbt welding GenX3TM welding inverter igbt 600V welding GenX3TM |
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First line: 2211A Battery Charger Adapter, Focus 2211A Series Adapter, Charger Adapter, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply Abstract: .. Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply. Switching Power Supply Battery Charger ~ Focus - 2211. A. Switching .. Tags: 2211A np60 datasheet abstract.. |
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First line: parallel MOSFET Transistors how to switch of fast a mosfet N-Channel MOSFET specifications of MOSFET parallel mosfet Interface switching (60V, 115mA) RK7002 FFeatures on-resistance. Fast switching speed. Low-voltage drive. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel M Abstract: .. Interface and switching 60V, 115mA RK7002. Features 1 Low on-resistance. 2 Fast switching speed. 3 Low-voltage drive. 4 Easily designed drive circuits. 5 Easy to parallel. Structure .. Tags: specifications of MOSFET how to switch of fast a mosfet switching rk7002 parallel MOSFET Transistors parallel mosfet n-channel mosfet transistor MOSFET SWITCHING mosfet ratings mosfet low-voltage mosfet drive mosfet - n3 mosfet RK7002 |
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First line: N-Channel MOSFET parallel mosfet Interface switching (30V, 200mA) 2SK2731 FFeatures on-resistance. Fast switching speed. Low-voltage drive (4V). Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Interface and switching 30V, 200mA 2SK2731. Features 1 Low on-resistance. 2 Fast switching speed. 3 Low-voltage drive 4V . 4 Easily designed drive circuits. 5 Easy to parallel. Structure .. Tags: transistor 147 switching parallel MOSFET Transistors parallel mosfet n-channel mosfet transistor N-Channel MOSFET mosfet low-voltage mosfet - n3 mosfet CHARACTERISTICS 200MA 2SK2731 |
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First line: 1N4148 diode DIODE 1N914b Diode Equivalent 1N4148 diode 1n4148 JEDEC 1N4148 High-speed switching diode 1N4148 1N4150 1N4448 1N914B TThis product available only outside Japan. Abstract: .. High‐speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B. ✻This product is available only outside of Japan. JEDEC Standard Product The following 1N series diodes are available to support the .. Tags: Diode Equivalent 1N4148 DIODE 1N914b 1N4148 diode switching JEDEC 1N4148 JAPAN transistor free download datasheet 1N4148 diodes 1n4148 Diode Series DIODE 1N4148 diode 1N datasheets diode 1n4148 CPU COOLER 1N914B 1N4148 1N4150 1N4448 1N914B |
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First line: s 2230 Battery Charger Adapter, Focus 2230 Series Adapter, Charger Adapter, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply Abstract: .. Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply, Switching Power Supply. Switching Power Supply Battery Charger ~ Focus - 2230. Switching Power .. Tags: s 2230 datasheet abstract.. |
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First line: VCC=850V, VGE=±5V RG=3.3, Tj=25°C, LS=50nH Inductive load Integrated over range SWITCHING ENERGY [J/P] Abstract: .. SWITCHING ENERGY [J/P] Half-bridge switching energy characteristics typical VCC=850V, VGE=±15V RG=3.3Ω, Tj=125°C, LS=150nH Inductive load Integrated over range of 10% Eon. Eoff. Erec .. Tags: datasheet abstract.. |
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First line: 200NH 1.50 SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) SWITCHING LOSS COLLECTOR CURRENT (TYPICAL) 125°C 200nH ESW(on) ESW(off) Inductive Load Abstract: .. COLLECTOR CURRENT, IC, AMPERES SWITCHING LOSS, E. SW on , E SW off , J/PULSE SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL 0 500 400 300 200 100 0. 0.75. 1.00. 1.25. 0.25. 0.50. 1.50. VGE = 15V Tj = 125 .. Tags: 200NH datasheet abstract.. |
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First line: Darlington transistor to 92 darlington DARLINGTON* darlington amplifiers darlington pair transistor European specification models types [Leaded type] FTO-92 type General purpose small signal amplifiers Abstract: .. General purpose amplification and switching. Medium power amplification. Darlington pair type. TO-92 package. 89. Transistors USA / European specification models types. TO-92 / PNP type. General .. Tags: darlington pair transistor darlington amplifiers DARLINGTON* Darlington transistor to 92 types of transistors transistor darlington to-92 switching transistors switching SOD87 footprint small signal transistors datasheet small signal pnp power switching power darlington npn transistor power darlington FTO-92 |
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First line: switch Oil-Tight Limit Switches FEATURES CHARACTERISTICS CIRCUITRY RATING (CONTACT) Abstract: .. Oil-Tight Limit Switches. B18420A OIL-TIGHT LIMIT SWITCH. B18420C OIL-TIGHT LIMIT SWITCH. B18420E OIL-TIGHT LIMIT SWITCH. B18420G OIL-TIGHT LIMIT SWITCH. B18420J OIL-TIGHT LIMIT SWITCH. B18420M .. Tags: switch datasheet abstract.. |
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First line: switch in the circuit Switching Transformers CURRENT transformers CURRENT TRANSFORMER switch mode transformer OFF-LINE Switch Mode CUSTOMER INPUTS Customer specification circuit parameters listed below will helpful design Switch Mode Power Transformer. Abstract: .. 135. Power Transformers OFF-LINE Switch Mode. CUSTOMER INPUTS. 1. Input voltage range Vin . 2. Output power Po . 3. Output voltage Vo . 4. Output current range Io . 5. Switching frequency F .. Tags: switch mode transformer CURRENT TRANSFORMER CURRENT transformers Switching Transformers switch in the circuit datasheet abstract.. |
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First line: parallel mosfet Small switching (60V, 2SK2503 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Low-voltage drive (4V). Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Small switching 60V, 5A 2SK2503. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Low-voltage drive 4V . 5 Easily designed drive circuits. 6 Easy .. Tags: switching parallel mosfet n-channel mosfet transistor n-channel mosfet 2SK2503 |
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First line: N-Channel MOSFET 200v mosfet Switching (200V, 2SK2887 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 200V, 3A 2SK2887. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET MOSFET Gate Drive Characteristics 2sk2887 200v mosfet 2SK2887 |
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First line: Switching (500V, 2SK2793 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 500V, 5A 2SK2793. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET N-channel 500V mosfet n-channel mosfet 5a MOSFET Gate Drive Characteristics 2SK2793 |
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First line: mosfet Small switching (30V, 2SK2103 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Low-voltage drive (4V). Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Small switching 30V, 2A 2SK2103. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Low-voltage drive 4V . 5 Easily designed drive circuits. 6 Easy .. Tags: switching parallel mosfet n-channel mosfet transistor n-channel mosfet low-voltage mosfet - n3 MOSFET 2SK2103 |
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First line: mosfet low vgs Small switching (60V, 10A) 2SK2095N FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Easily designed drive circuits. VGS(th). Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Small switching 60V, 10A 2SK2095N. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Easily designed drive circuits. 5 Low VGS th . 6 Easy to parallel .. Tags: switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET mosfet low vgs Mosfet 2SK2095N |
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First line: mosfet structure 100V N-channel mosfet Small switching (100V, 2SK2504 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Low-voltage drive (4V). Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Small switching 100V, 5A 2SK2504. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Low-voltage drive 4V . 5 Easily designed drive circuits. 6 .. Tags: 100V N-channel mosfet mosfet structure switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET n-channel mosfet low-voltage mosfet 5a mosfet - n3 MOSFET 2SK2504 |
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First line: Small switching (60V, RK3055E FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Low-voltage drive. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Small switching 60V, 8A RK3055E. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Low-voltage drive. 5 Easily designed drive circuits. 6 Easy .. Tags: switching RK3055E parallel mosfet n-channel mosfet transistor N-Channel MOSFET n-channel mosfet low-voltage mosfet datasheet MOSFET RK3055E |
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First line: 600V,4A* Switching (600V, 2SK2792 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 600V, 4A 2SK2792. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: 600V,4A* 600V,4A parallel MOSFET Transistors transistor 600v switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET mosfet 600V N-CHANNEL mosfet 600v mosfet Gate Drive Characteristics 2SK2792 |
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First line: N-Channel mosfet 600v 7A MOSFET 600V 7A mosfet 600V 7A N-CHANNEL MOSFET 600V 7A Switching (600V, 2SK2740 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N- Abstract: .. Switching 600V, 7A 2SK2740. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: MOSFET 600V 7AÂ switching parallel mosfet n-channel mosfet transistor N-Channel mosfet 600v 7A N-Channel MOSFET n-channel mosfet 600V N-CHANNEL mosfet 600V 7A N-CHANNEL MOSFET 600V 7A mosfet 600v mosfet 2SK2740 |
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First line: Switching (450V, 2SK2713 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 450V, 5A 2SK2713. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET MOSFET Gate Drive Characteristics 2SK2713 |
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First line: 107 diode 2SK2299* Switching (450V, 2SK2299N FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 450V, 7A 2SK2299N. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: 107 diode switching parallel mosfet n-channel mosfet transistor N-Channel MOSFET n-channel MOSFET Gate Drive Characteristics 2SK2299* 2SK2299N |
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First line: 200v 5A mosfet 200v mosfet Switching (200V, 2SK2459N FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 200V, 5A 2SK2459N. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: switching n-channel mosfet transistor MOSFET Gate Drive Characteristics 2SK2459N 200v mosfet 200v 5A mosfet 2SK2459N |
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First line: 2SK2460N* Switching (250V, 2SK2460N FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage guaranteed VGSS ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 250V, 5A 2SK2460N. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage guaranteed at VGSS = ±30V. 5 Easily designed .. Tags: 2SK2460N* switching n-channel mosfet transistor mosfet Gate Drive Characteristics 2SK2460N 2SK2460N |
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First line: mosfet datasheet mosfet 10a 500v Switching (500V, 10A) 2SK2714 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: Abstract: .. Switching 500V, 10A 2SK2714. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: mosfet 10a 500v switching n-channel mosfet transistor N-Channel MOSFET N-channel 500V mosfet MOSFET Gate Drive Characteristics 2SK2714 2SK2714 |
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First line: 800v mosfet MOSFET 800V 3A MOSFET 800V 3A Switching (800V, 2SK2294 FFeatures on-resistance. Fast switching speed. Wide (safe operating area). Gate-source voltage (VGSS) guaranteed ±30V. Easily designed drive circuits. Easy parallel. FStructure Silicon N-channel MOSFET FExternal dimensions ( Abstract: .. Switching 800V, 3A 2SK2294. Features 1 Low on-resistance. 2 Fast switching speed. 3 Wide SOA safe operating area . 4 Gate-source voltage VGSS guaran-teed to be ±30V. 5 Easily designed .. Tags: MOSFET 800V 3A 800v mosfet switching n-channel mosfet transistor MOSFET 800V 3A MOSFET Gate Drive Characteristics 800v mosfet 2SK2294 2SK2294 |
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First line: Microwave switch Fast Switching Speed: (GaAs) Model TAN6007 Abstract: .. 4 Bit Digital Attenuator Fast Switching Speed: 20 ns GaAs Model TAN6007 DC to 50 MHz. .. Tags: Microwave switch switching spectrum digital DC to microwave attenuators attenuator TAN6007 |
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First line: Model 50 transistor 824 Fast Switching Speed: (GaAs) Model TAN6008 Abstract: .. 4 Bit Digital Attenuator Fast Switching Speed: 20 ns GaAs Model TAN6008 50 to 500 MHz. .. Tags: Model 50 transistor 824 switching spectrum gaas FAST-SWITCH* fast diode digital attenuator digital attenuator TAN6008 |
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First line: flyback regulator pwm "Switching Regulator" PWM Regulator CURRENT MODE FLYBACK SWITCHING REGULATOR MEMO Abstract: .. CURRENT MODE FLYBACK PWM SWITCHING REGULATOR. MEMO. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions .. Tags: "Switching Regulator" regulator pwm switching Regulator PWM regulator flyback application flyback ELECTRONIC REGULATOR Current Regulator Diode current regulator "Switching Regulator" datasheet abstract.. |
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First line: igbt* Semitrans* IGBT IGBT parallel Semitrans* igbt SEMITRANS various chip technologies each requirement take your pick there perfect your application Abstract: .. chips package electronics solutions. low V CEsat low switching. losses. low R thjc. easy paralleling. rugged. short circuit proof. SEMITRANS take your pick there is a perfect fit for your application .. Tags: Semitrans* Semitrans* IGBT igbt*Â transistor igbt transistor and IGBT to 126 switching SN29723 SHORT CIRCUIT PROOF short Semitrans paralleling* IGBT.* IGBT parallel datasheet abstract.. |
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First line: ir igbt TURN-ON SWITCHING (mJ/PULSE) 10-1 Abstract: .. CONDITIONS: HALF-BRIDGE SWITCHING MODE Tj = 125°C VCC = 300V VGE = ±15V RG = 625/Ir. SWITCHING ENERGY 600V CLASS U-SERIES IGBT MODULE. CM150. * U-12HCM200 * U-12HCM300. * U-12H CM400 * U-12HCM600. * U .. Tags: ir igbt datasheet abstract.. |
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First line: RLS4148* External diodes diode RLS4148 RLS4148 RLS4150 RLS4448 TThis product available only outside Japan. FExternal dimensions (Units: Abstract: .. High-speed switching diode RLS4148 / RLS4150 / RLS4448. ✻This product is available only outside of Japan. JEDEC Standard Product The following RLS series diodes are available to support the JEDEC .. Tags: External switching RLS4148* JAPAN transistor diodes Diode Series diode datasheet diode "switching Diode" RLS4148 RLS4150 RLS4448 |
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