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1 - 50 of about 361 for mosfet 600V.. |
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First line: mosfet 600V 30A mosfet 1200V 40A 2kw pfc welding mosfet 600V 60A 2kw pfc Power Modules Fast Power Module Solutions Vincotech market leaders Power Modules.Target applications include motor drives, power supplies welding equipment.With different standard housings more than standard product families, V Abstract: .. V23990-P623-F10-PM1 2 600V 60A 250kHz. V23990-P623-F14-PM1 600V 60A 250kHz. V23990-P623 .. frequency W MOSFET and IGBT designs. W Integrated high frequency. capacitor. flowPFC 0. W .. Tags: 2kw pfc mosfet 600V 60A 2kw pfc welding mosfet 1200V 40A mosfet 600V 30A datasheet abstract.. |
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First line: 1200v 30A to247 welding inverter 100A UC3842 mosfet 600V 30A MOSFET 1000v 30a WELDING STMicroelectronics SOLUTIONS Mains Rectification Abstract: .. cons. Level Shifter 600V - current loop control Mosfet Driver 3 x 600mA Mosfet 500V Max220 .. - 2 x 100A,400V High Power Diodes ISOTOP - 3 x 70A, 400V High Power Diodes ISOTOP 2 x 30A / 2 x 60A .. Tags: MOSFET 1000v 30a mosfet 600V 30A welding inverter 100A UC3842 1200v 30A to247 controller for PWM with IGBT W210PIV* W210* VB408 uc3842 application circuit uc3842 application 600V UC3842 Thyristor to220 thyristor 1200V 50A STGW50N60 pwm thyristor pwm INVERTER datasheet abstract.. |
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First line: IGBT 1200V 60A Super-247* Ir 900v 60a igbt 1200V 60A mosfet 600V 60A PROVISIONAL 94239 IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Abstract: .. Eon Turn-On Switching Loss 3214 IC = 60A, VCC = 600V. Eoff Turn-Off Switching Loss 4783 μJ VGE = 15V .. MOSFET IGBT. C .. Tags: igbt 1200V 60A Ir 900v 60a Super-247* IGBT 1200V 60A mosfet 600V 60A IGBT 60A IRGPS60B120KD |
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First line: igbt 1200V 60A IGBT 1200V 60A mosfet 600V 60A diode 60a 400v SGS-THOMSON STTA12006T(V)1 TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*60A Vrrm 600V (typ) 45ns (max) 1.5V Abstract: .. MAIN PRODUCTS CHARACTERISTICS If av 2*60A Vrrm 600V trr typ 45ns Vf max 1.5V es as K1 Al K2 .. or MOSFET in all "Freewheel Mode" operations and is particularly suitable and efficient .. Tags: diode 60a 400v mosfet 600V 60A IGBT 1200V 60A igbt 1200V 60A datasheet abstract.. |
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First line: 600v 20a IGBT driver P channel 600v 20a IGBT motor driver full bridge 20A mosfet 600V 20A BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Frequency Converter Servo Motor Drive Inverter Tacho/ Encoder Abstract: .. 600V, 7A IGBT TO220 600V, 20A Fast IGBT+Diode TO247. 600V, 30A, IGBT TO-247 Mosfet 500V 15/20A .. Ultra Low Ron Power Mosfets STyccNEvv vv: 30-200V cc: 1-60A y: SOT223, DPAK, D2PAK TO220, TO247 .. Tags: mosfet 600V 20A motor driver full bridge 20A P channel 600v 20a IGBT 600v 20a IGBT driver bridge 2A 600v ultra fast dual igbt triac, 600V, Triac 3a 600v triac 1200V three phase IGBT Bridge driving ic tea3718 tacho generator STGW30N60 stepper motor driver full bridge 6A STEPPER MOTOR DRIVE 4 AMP stepper driver l2720 datasheet abstract.. |
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First line: 900V APT60N90JC3 OLMOS Power Semiconductors Super Junction MOSFET Abstract: .. Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device .. VDD = 600V, VGS = 15V ID = 60A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 600V, VGS = 15V. ID = 60A, RG .. Tags: mosfet 600V 60A APT60N90JC3 |
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First line: SGS-THOMSON aJOTOMS STTB12006T(V)1 TURBOSWITCH "B". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*60A Vrrm 600V (typ) 65ns (max) 1.3V Abstract: .. MAIN PRODUCTS CHARACTERISTICS If av 2*60A Vrrm 600V trr typ 65ns Vf max 1.3V STTB12006T .. serial inductance pT Vr x Irm2x S x F SxdlF/dt L x lRM x F P3 and P3' are suitable for power MOSFET .. Tags: datasheet abstract.. |
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First line: mosfet 600V 60A MOSFET 1000v 30a APTM120A15F VBUS VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. VGS = 10V VBus = 600V ID = 60A 480. nC. Td on Turn-on Delay Time 20. Tr Rise Time 15. Td off Turn-off .. Qrr Reverse Recovery Charge IS = - 60A VR = 600V diS/dt = 400A/μs Tj = 125°C 28. μC. Eon includes diode .. Tags: MOSFET 1000v 30a mosfet 600V 60A APTM120A15F |
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First line: STY60NM60 N-CHANNEL 600V 0.050 Max247 Zener-Protected MDmeshTM Power MOSFET TARGET DATA TYPE STY60NM60 Abstract: .. N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh] Power MOSFET. ■ TYPICAL RDS on = 0.050Ω. ■ HIGH dv/dt AND AVALANCHE CAPABILITIES. ■ 100% AVALANCHE TESTED. ■ LOW INPUT CAPACITANCE AND .. Tags: mosfet 600V 60A Max247 |
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First line: MOSFET 1200v 30a APTM120DU15 VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. VGS = 10V VBus = 600V ID = 60A 480. nC. Td on Turn-on Delay Time 20. Tr Rise Time 15. Td off Turn-off .. Qrr Reverse Recovery Charge IS = - 60A, VR = 600V diS/dt = 400A/μs 116 μC. Eon includes diode .. Tags: MOSFET 1200v 30a mosfet 600V 60A APTM120DU15 |
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First line: APTM120A15FG VBUS VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. – Source Charge 96 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 60A 480 nC Td on Turn-on Delay .. Reverse Recovery Charge IS = - 60A VR = 600V diS/dt = 400A/μs Tj = 125°C 28 μC dv/dt numbers reflect .. Tags: mosfet 600V 60A APTM120A15FG |
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First line: APTM120DU15G VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. – Source Charge 96 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 60A 480 nC Td on Turn-on Delay .. Qrr Reverse Recovery Charge IS = - 60A, VR = 600V diS/dt = 400A/μs 116 μC dv/dt numbers reflect the .. Tags: APTM120DU15G |
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First line: power Diode 200V 10A 200v 10A mosfet mosfet 600V 20A mosfet 10a 600v NTE2971 MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: SMPS DC-DC Converter Battery Charger Power Supply Printer Copier HDD, FDD, Personal Computer Absolute Maximum Ratings: +25°C unless otherwise specified) Abstract: .. , VDSS 600V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate–Source Voltage VDS .. Pulsed 60A .. Tags: mosfet 10a 600v power Diode 200V 10A mosfet 600V 60A mosfet 600V 20A 200v 10A mosfet NTE2971 |
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First line: JS225010 MOSFET JS225010 FS20SM-12 QJS0612001 Powerex Inc., Hillis St., Youngwood 15697 (724) 925-7272 MOSFET Module 120A 600V Single Abstract: .. Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single MOSFET Module. 120A 600V .. Vsd Source Drain Voltage Vgs=0 Is=60A 1.5 2.0 V. Ciss Input Capacitance Vds=25V Vgs=0 f=1Mhz .. Tags: FS20SM-12 MOSFET JS225010 JS225010 "MOSFET Module" QJS0612001 |
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First line: FS20SM-12 QJS0612002 Powerex Inc., Hillis St., Youngwood 15697 (724) 925-7272 Single MOSFET Module 120A 600V Abstract: .. Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single MOSFET Module. 120A 600V .. Vsd Source Drain Voltage Vgs=0 Is=60A 1.5 2.0 V. Ciss Input Capacitance Vds=25V Vgs=0 f=1Mhz .. Tags: FS20SM-12 mosfet 600V 60A JS225010 "MOSFET Module" QJS0612002 |
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First line: full bridge ir2110 Full-bridge IR2110 irpds30a iru1239* N mosfet 100v 500A TEL: 0755-8380 8450 FAX: 0755-8380 8425 Abstract: .. 600V 60A Ultra-Fast Discrete Diode in a TO-247AC package 0 0 0 0 CH. SHENZHEN SHOUHE TECHNOLOGY .. 500V Single N-Channel HEXFET Power MOSFET in a SOT-227 Iso package 0 0 0 0 Cl. FA53SA50 Discrete .. Tags: N mosfet 100v 500A iru1239* irpds30a Full-bridge IR2110 full bridge ir2110 transistors sot-223 06a TO-262 MOSFET TO-247AC Package igbt TO 220 Package High current N CHANNEL MOSFET TO 220 Package High current 250W N CHANNEL MOSFE Thyristor to220 thyristor 80A, 1200V Thyristor 40V 120A SOT323 MOSFET P sot-227 footprint SN76477 datasheet abstract.. |
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First line: APTM120DA15 VBUS VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. VGS = 10V VBus = 600V ID = 60A 480. nC. Td on Turn-on Delay Time 20. Tr Rise Time 15. Td off Turn-off .. Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt = 200A/μs Tj = 125°C 4000. nC. Eon includes diode .. Tags: APTM120DA15 |
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First line: APTM120SK15 VBUS VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. VGS = 10V VBus = 600V ID = 60A 480. nC. Td on Turn-on Delay Time 20. Tr Rise Time 15. Td off Turn-off .. Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt = 200A/μs Tj = 125°C 4000. nC. Eon includes diode .. Tags: mosfet 600V 60A MOSFET 1000v 30a APTM120SK15 |
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First line: mosfet 600V 60A APTM120SK15G VBUS VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. – Source Charge 96 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 60A 480 nC Td on Turn-on Delay .. A IF = 60A 2 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse .. Tags: mosfet 600V 60A APTM120SK15G |
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First line: APTM120DA15G VBUS VDSS 1200V RDSon 150m 25°C 25°C Abstract: .. – Source Charge 96 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 60A 480 nC Td on Turn-on Delay .. A IF = 60A 2 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse .. Tags: APTM120DA15G |
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First line: igbt 1200V 60A ixgr32n60cd1 50N60B MOSFET 1000v 30a transistor 12n60c ISOPLUS Summary Title Isolated Discrete Packages ISOPLUS247TM ISOPLUS i4-PACTM Page ISOPLUS247TM ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247TM isolated version PLUS247TM-package (TO247 without mounting hole). design thi Abstract: .. 500V 500V 500V 500V 600V 600V 800V 800V 800V 800V 900V 900V 1000V 1000V 1000V 1000V. Note: “Q” - low .. MOSFET 180A. 180A 75A 80A 165A 68A 105A 56A 71A 90A 105A 83A 48A 75A 13A 24A 30A 43A 48A 24A 37A 7.5A .. Tags: transistor 12n60c 50N60B igbt 1200V 60A MOSFET 800V 10A mosfet 600V 30A mosfet 600V 20A MOSFET 1200v 30a mosfet 10a 800v MOSFET 1000v 30a IXLF19N250A* IXGR32N60CD1 igbt 68a Discrete IGBTS 900v diode schottky 600v TO247 |
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First line: APT80M60J 600V, 80A, 0.060 N-Channel MOSFET Power high speed, high voltage N-channel switch-mode power MOSFET. proprietary planar stripe design yields excellent reliability manufacturability. switching loss achieved with input capacitance ultra Crss "Miller" capacitance. intrinsic gate res Abstract: .. , ID = 60A. VGS = VDS, ID = 5mA. VDS = 600V TJ = 25°C. VGS = 0V TJ = 125°C. VGS = ±30V. Test Conditions. MOSFET .. ISD = 60A, TJ = 25°C, VGS = 0V ISD = 60A 3. diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 60A, di/dt ≤1000A/μs, VDD .. Tags: APT80M60J |
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First line: APT80M60J 600V, 84A, 0.055 N-Channel MOSFET Power high speed, high voltage N-channel switch-mode power MOSFET. proprietary planar stripe design yields excellent reliability manufacturability. switching loss achieved with input capacitance ultra Crss "Miller" capacitance. intrinsic gate res Abstract: .. , ID = 60A. VGS = VDS, ID = 5mA. V DS = 600V TJ = 25°C. V GS = 0V TJ = 125°C. VGS = ±30V. Test Conditions. MOSFET .. ISD = 60A, TJ = 25°C, VGS = 0V ISD = 60A 3. diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 60A, di/dt ≤1000A/μs, VDD .. Tags: APT80M60J |
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First line: transistor marking 4c TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE diode ed 4c STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM (typ) (max) FEATURES BENEFITS SPECIFICTO "FREEWHEEL MODE"OPERATIONS: FREEWHEEL BOOSTER DIODE. ULTRA-FAST Abstract: .. MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor .. 60A. VRRM 600V. trr typ 45ns. VF max 1.5V. MAIN PRODUCT CHARACTERISTICS. Symbol Parameter Value .. Tags: TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE transistor marking 4c diode ed 4c SOD93 |
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First line: transistor marking 4c TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE diode ed 4c STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM (typ) (max) FEATURES BENEFITS SPECIFIC "FREEWHEEL MODE" OPERATIONS: FREEWHEEL BOOSTER DIODE. ULTRA-FAST Abstract: .. MOSFET in all "freewheel mode" operations and is particularly suitable and efficient in motor .. 60A. VRRM 600V. trr typ 45ns. VF max 1.5V. MAIN PRODUCT CHARACTERISTICS. Symbol Parameter Value .. Tags: TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE transistor marking 4c diode ed 4c STTA6006P STTA12006TV1 2 |
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First line: STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM (typ) (max) FEATURES BENEFITS SPECIFICTO "FREEWHEEL MODE"OPERATIONS: FREEWHEEL BOOSTER DIODE. ULTRA-FAST RECOVERY. VERY OVERALL POWER LOSSES BOTH DIODE COMPANION TRANSISTOR. HIGH FRE Abstract: .. MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor .. 60A. VRRM 600V. trr typ 45ns. VF max 1.5V. MAIN PRODUCT CHARACTERISTICS. Symbol Parameter Value .. Tags: SOD93 |
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First line: STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM (typ) (max) FEATURES BENEFITS SPECIFIC "FREEWHEEL MODE" OPERATIONS: FREEWHEEL BOOSTER DIODE. ULTRA-FAST RECOVERY. VERY OVERALL POWER LOSSES BOTH DIODE COMPANION TRANSISTOR. HIGH FREQ Abstract: .. MOSFET in all "freewheel mode" operations and is particularly suitable and efficient in motor .. 60A. VRRM 600V. trr typ 45ns. VF max 1.5V. MAIN PRODUCT CHARACTERISTICS. Symbol Parameter Value .. Tags: SOD93 diode ed 4c SOD93 |
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First line: 2kw pfc welding 3.5kw pfc data sheet ic 4017 SMPS flyback 2kW 2kW flyback PFC Semiconductor Group find office near Abstract: .. for a 600V MOSFET by a factor of 5 over any other previously existing technologies. In addition .. SGP30N60 60A/30A .. Tags: 2kW flyback PFC SMPS flyback 2kW data sheet ic 4017 3.5kw pfc 2kw pfc welding UPS SIEMENS Triac 3a 600v smd triac 1200V siemens soft starter siemens rs 1001 Siemens Mod 95 A siemens igbt siemens family 80 P-CHANNEL 25A TO-247 POWER MOSFET p-channel 250V 16A power mosfet n60s5* datasheet abstract.. |
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First line: STTB12006TV1* STTB12006TV1 STTB12006TV1/2 TURBOSWITCH "B". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM (typ) (max) 2*60A 600V 65ns 1.3V Abstract: .. IF AV 2*60A. VRRM 600V. trr typ 65ns. VF max 1.3V. MAIN PRODUCTS CHARACTERISTICS. ISOTOPTM .. P3 and P3’ are suitable for power MOSFET and IGBT. I. I F. Rd. I R. V R. VtO V F. V. Fig. 5: STATIC .. Tags: STTB12006TV1* STTB12006TV2* STTB12006TV1 DIODE P1 STTB12006TV1 2 |
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First line: APT77H60J 600V, 77A, 0.065 Max, 300ns N-Channel Ultrafast Recovery FREDFET Power high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version drain-source (body) diode that been optimized maximum reliability phase shifted bridge other circuits through much reduced trr, soft re Abstract: .. = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 60A. VGS = VDS, ID = 5mA. VDS = 600V TJ = 25°C. VGS = 0V .. MOSFET symbol showing the integral reverse p-n junction diode body diode ISD = 60A, TJ = 25°C .. Tags: apt77h60j APT77H60J |
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First line: 220v to 24v switching regulator circuits drive motor 10A with transistor P channel MOSFET DC 48v AC 220v 500w smps P channel 600v 20a IGBT 220V ac to 9V dc converter circuit Power Computing Analog Discrete Interface Logic Optoelectronics Innovative Power Products Computing System Design Power Soluti Abstract: .. N-Channel Logic-Level PowerTrench MOSFET. 1A Bus Termination Regulator for Memories DDR .. 35A‐60A/500V‐600V N-Channel. ISL9R1560P2. ISL9R3060G2. 15A‐30A/600V Stealth Rectifiers .. Tags: 220V ac to 9V dc converter circuit P channel 600v 20a IGBT DC 48v AC 220v 500w smps drive motor 10A with transistor P channel MOSFET 220v to 24v switching regulator circuits USB1T11A smps isolated 12v output smps FAN4803 smps 5V 500W smps 500w half bridge smps 500w 5V smps 500W smps 300W SDRAM unRegistered DIMM Schottky Diode 40V 15A dual ic fairchild S3680 datasheet abstract.. |
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First line: APTC90DAM60T1G Boost chopper Super Junction MOSFET VDSS 900V RDSon 25°C 25°C Application motor control Switched Mode Power Supplies Power Factor Correction Features Ultra RDSon Miller capacitance Ultra gate charge Avalanche energy rated Very rugged Kelvin source easy drive Very stray inducta Abstract: .. Current Tc = 80°C 60 A IF = 60A 2.2 2.8 IF = 120A 2.8 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj .. VDS=600V ID=52A TJ=125°C L=100μH. “COOLMOSTM comprise a new family of transistors developed .. Tags: Microsemi Avalanche APTC90DAM60T1G |
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First line: APTC90SKM60T1G Buck chopper Super Junction MOSFET VDSS 900V RDSon 25°C 25°C Application motor control Switched Mode Power Supplies Features Abstract: .. Current Tc = 80°C 60 A IF = 60A 2.2 2.8 IF = 120A 2.8 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj .. VDS=600V ID=52A TJ=125°C L=100μH. “COOLMOSTM comprise a new family of transistors developed .. Tags: Microsemi Avalanche APTC90SKM60T1G |
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First line: APT80F60J 600V, 84A, 0.055 Max, 370ns N-Channel FREDFET Power high speed, high voltage N-channel switch-mode power MOSFET. proprietary planar stripe design yields excellent reliability manufacturability. switching loss achieved with input capacitance ultra Crss "Miller" capacitance. intrin Abstract: .. = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 60A. VGS = VDS, ID = 2.5mA. V DS = 600V TJ = 25°C. V GS .. MOSFET symbol showing the integral reverse p-n junction diode body diode ISD = 60A, TJ = 25°C .. Tags: APT80F60J |
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First line: mosfet 600V 60A G30N60B3* To 247 AC package insulated gate bipolar transist TA49170 G30N60B3 intelai HGTG30N60B3 60A, 600V, Series N-Channel IGBT HGTG30N60B3 gated high voltage switching device combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state cond Abstract: .. intelai I HGTG30N60B3 Data Sheet 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS .. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a .. Tags: G30N60B3 TA49170 To 247 AC package insulated gate bipolar transist G30N60B3* mosfet 600V 60A datasheet abstract.. |
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First line: APTC90AM60SCTG Phase Series parallel diodes Super Junction MOSFET Power Module NTC2 VBUS VDSS 900V RDSon 25°C 25°C Abstract: .. -off Delay Time 400 Tf Fall Time Inductive Switching 125°C VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω .. Forward Current Tc = 85°C 60 A IF = 60A 1.1 1.15 IF = 120A 1.4 VF Diode Forward Voltage IF = 60A Tj = 125 .. Tags: mosfet 600V 20A Microsemi Avalanche 200v APTC90AM60SCTG |
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First line: HGTG30N120CN IGBT Guide igbt 1200V 60A intersil 1200v diode IGBT 1200V 60A Industrial IGBT family features range 600V Punch Through 1200V Punch Through (NPT). 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA RANGE (D-PAK) Abstract: .. Space, temperature and reliability problems will be eliminated, and MOSFET solutions are no .. Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT .. Tags: IGBT 1200V 60A intersil 1200v diode igbt 1200V 60A IGBT Guide HGTG30N120CN smps igbt P channel 600v 20a IGBT mosfet 600V 30A mosfet 600V 20A MOSFET 1200v 30a igbt 600V 30A datasheet igbt 1200V 40A HGTP7N60A4 HGTP20N60A4 HGTP12N60A4D HGTG*N60A4D datasheet abstract.. |
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First line: APT30GP60BSC* APT30GP60BSC TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC Abstract: .. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. • Low .. On Voltage VGE = 15V, IC = 30A, Tj = 125°C Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 25° .. Tags: APT30GP60BSC APT30GP60BSC* RECTIFIER DIODE 1000A schottky cree MOS APT30GP60BSC |
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First line: sty60NM60 Y60NM60* STY60NM60 N-CHANNEL 600V 0.050 Max247 Zener-Protected MDmeshTMPower MOSFET TYPE STY60NM60 VDSS 600V RDS(on) 0.055 TYPICAL RDS(on) 0.050 HIGH dv/dt AVALANCHE CAPABILITIES IMPROVED CAPABILITY INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST Abstract: .. N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmeshTMPower MOSFET. TYPICAL RDS on = 0.050Ω. HIGH dv/dt AND AVALANCHE CAPABILITIES. IMPROVED ESD CAPABILITY. LOW INPUT CAPACITANCE AND .. Tags: Y60NM60* STY60NM60 Max247 |
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First line: K3060g3 ISL9K3060G3 ISL9K3060G3 30A, 600V StealthTM Dual Diode Abstract: .. ISL9K3060G3 30A, 600V StealthTM Dual Diode. General Description The ISL9K3060G3 is a .. VR = 390V, TJ = 125 oC IF = 60A. IF = 30A. IF = 15A. S, REVERSE RECOVERY SOFTNESS FACTOR. 1000 1600 1400 400 .. Tags: mosfet 600V 30A K3060g3 ISL9K3060G3 |
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First line: r3060p2 R3060P2* r3060g2 r3060g2* ISL9R3060G2, ISL9R3060P2 ISL9R3060G2, ISL9R3060P2 30A, 600V StealthTM Diode Abstract: .. ISL9R3060G2, ISL9R3060P2 30A, 600V StealthTM Diode. General Description The ISL9R3060G2 and .. VR = 390V, TJ = 125 oC IF = 60A. IF = 30A. IF = 15A. S, REVERSE RECOVERY SOFTNESS FACTOR. 1000 1600 1400 400 .. Tags: R3060P2* r3060p2 r3060g2* ISL9R3060G2 ISL9R3060P2 |
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First line: 227 1112 FF1N30HS60DD* FF1N30HS60DD equivalent FF1N30HS60DD FF1N30HS60DD 30A, 600V StealthTM Diode Abstract: .. FF1N30HS60DD 30A, 600V StealthTM Diode. General Description The FF1N30HS60DD is a StealthTM .. VR = 390V, TJ = 125 oC IF = 60A. IF = 30A. IF = 15A. S, REVERSE RECOVERY SOFTNESS FACTOR. 1000 1600 1400 400 .. Tags: FF1N30HS60DD equivalent FF1N30HS60DD* 227 1112 FF1N30HS60DD |
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First line: R3060P2* r3060g2* r3060g2 ISL9R3060G2, ISL9R3060P2 ISL9R3060G2, ISL9R3060P2 30A, 600V StealthTM Diode Abstract: .. ISL9R3060G2, ISL9R3060P2 30A, 600V StealthTM Diode. General Description The ISL9R3060G2 and .. VR = 390V, TJ = 125°C IF = 60A. IF = 30A. IF = 15A. S, REVERSE RECOVERY SOFTNESS FACTOR. 1000 1600 1400 400 .. Tags: R3060P2* r3060g2* ISL9R3060G2 ISL9R3060P2 |
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First line: APTM120DA30T1G VDSS 1200V RDSon 300m 25°C 25°C Abstract: .. = 600V ID = 25A 265 nC Td on Turn-on Delay Time 100 Tr Rise Time 60 Td off Turn-off Delay Time 315 .. DC Forward Current Tc = 80°C 60 A IF = 60A 2.5 3 IF = 120A 3 VF Diode Forward Voltage IF = 60A Tj = 125°C 1 .. Tags: APTM120DA30T1G |
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First line: uPA2719AGR RJH60F5DPK RJH60* RJH60F7* rjh60f5* Solutions Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, IGBTs System designs that save energy have valuable marketing advantages. products typically must deliver increasingly complex functionality higher levels performance combination tha Abstract: .. RJH60F5DPK 600V 80A 40A 1.37V 40A 15V 75ns 30A 300V YES TO-3P. RJH60F4DPK 600V 60A 30A 1.40V 30A .. RJH6087BDPK 600V 50A 2.75V 50A 15V 50ns YES TO-3P. RJH6088BDPK 600V 60A 2.75V 60A 15V 60ns YES TO .. Tags: rjh60f5* RJH60F7* RJH60* RJH60F5DPK uPA2719AGR datasheet abstract.. |
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First line: Understanding Droop Programmable Active Droop ---Ron Lenk, Staff Applications Engineer 09/20/00 Programmable Active Droop trademark Fairchild Semiconductor. Abstract: .. is 60A. Assume the low-side MOSFET is a pair of FDS6690, each with a nominal RDS,on of 11mΩ 5.5mΩ .. At a current of 60A, this means ESR = 66mV / 60A = 1.1mΩ . Using the Rubycon caps, we require 23mΩ / 1 .. Tags: ZL Rubycon RC5057 AB-24 |
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First line: tl 7400 IC 7400 datasheet IC 7400 data sheet IC 7400 IC 7400 pdf APT30GP60B APT30GP60S POWER IGBT Abstract: .. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. • Low .. On Voltage VGE = 15V, IC = 30A, Tj = 125°C Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 25° .. Tags: us 7400 ic tl 7400 IC 7400 pdf IC 7400 datasheet IC 7400 data sheet IC 7400 data sheet IC 7400 APT30GP60B APT30GP60S |
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First line: APT30GP60B APT30GP60S POWER IGBT Abstract: .. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. • Low .. On Voltage VGE = 15V, IC = 30A, Tj = 125°C Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 25° .. Tags: us 7400 ic IC 7400 pdf IC 7400 datasheet APT30GP60B APT30GP60S |
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First line: APT30GP60B POWER IGBT generation high voltage power IGBTs. Using punch-through technology proprietary metal gate, this IGBT been optimized very fast switching, making ideal high frequency, high voltage switchmode power supplies tail current sensitive applications. many cases, POWER IGBT provides low Abstract: .. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. • Low .. On Voltage VGE = 15V, IC = 30A, Tj = 125°C Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 25° .. Tags: us 7400 ic IC 7400 pdf IC 7400 datasheet data sheet IC 7400 APT30GP60B |
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First line: TA49170 G30N60B3D TA49172 intelai HGTG30N60B3D January 2000 File Number 4446.2 60A, 600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60B3D gated high voltage switching device combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state co Abstract: .. .2 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D .. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a .. Tags: TA49172 G30N60B3D TA49170 datasheet abstract.. |
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