| Fulltext Datasheet Results |
1 - 50 of about 445 for ma 1458 |
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First line: BC 458 ma 1458 OPERATIONAL AMPLIFIERS 1458 (AN6572) ,AN1458S,AN6571 (AN6572) ,AN1 458S, AN6571 Dual Operational Amplifiers Outline AN]458( AN6572.1, AN1458S, AN6571 dual operational amplifiers with phase compensation circuits built-in also output short-circuit protection built-in, that they highly s Abstract: .. Block Diagrams an 1458 an6572 , an1458s VoiU v,„r[2 V,„i[3 Vki-:[4 GND EF. jDVcc I]Vo2 J .. 5.6 mA Power Consumption Pc 4 RL = CO 170 mW Output Short-Circuit Current lo short 2 ±20 mA Slew .. Tags: ma 1458 BC 458 datasheet abstract.. |
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First line: 220v to 12v power supply switching circuit diagra input maximum and minimum voltage of 1458 220v to 5v power supply switching circuit diagra nc 1458 ma 1458 LTC1458/LTC1458L Quad 12-Bit Rail-to-Rail Micropower DACs Abstract: .. The LTC®1458/LTC1458L are complete single supply, quad rail-to-rail voltage output, 12-bit .. Short-Circuit Current High VOUT Shorted to VCC ● 70 120 mA. Output Impedance to GND Input Code = 0 ● .. Tags: nc 1458 220v to 5v power supply switching circuit diagra 220v to 12v power supply switching circuit diagra ma 1458 LTC1458CG input maximum and minimum voltage of 1458 A 1458 1458,* 1458 1/2 1458 LTC1458 LTC1458L |
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First line: AN6572 ma 1458 Operational Amplifiers 1458 (AN6572) 1458 (AN6572), AN1458S, AN6571 Dual Operational Amplifiers Overview 1458 (AN6572) AN1458S, AN6571 dual operational amplifiers with phase compensation circuits built-in also output short-circuit protection built-in, that they highly stable used wide Abstract: .. mA Power consumption Pc Rl= ° ° - — 170 mW Output short-circuit current Io short -. ±20 - mA .. Amplifiers AN 1458 AN6572 , AN1458S, AN6571 Characteristics Curve Gv-f £ I o 120 110 100 90 80 .. Tags: ma 1458 AN6572 datasheet abstract.. |
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First line: 555 IC virtual timer IC 1458 function generator REJ09B0033-0300 SH7720 Group, SH7721 Group Abstract: .. is executed at the MA stage of the pipeline. 2. Any data transfer instruction does not modify the .. Rev. 3.00 Jan. 18, 2008 Page 105 of 1458. REJ09B0033-0300 .. Tags: IC 1458 function generator 555 IC virtual timer IC 1458 op datasheet and application trw rf transistor TEA 1091 sy 346 SH7720 Renesas spi sh R8A77211C133BGV PDCR 1000* nc 1458 p1 ma 1458 lsi 1038 modem* GT 1081 flowchart of bluetooth technology REJ09B0033-0300 |
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First line: 1214 Watts Volts, 100µs, Radar 1200 1400 1214-300 internally matched, COMMON BASE transistor capable providing Watts pulsed output power hundred microseconds pulse width, percent duty factor across band 1200 1400 MHz. This hermetically solder-sealed transistor specifically designed L-Band rada Abstract: .. Dissipation @ 25 C 1458 Watts o. Maximum Voltage and Current BVces Collector to Emitter Voltage .. = 5 mA Rated Pulse Condition. 65 3.0 10 45. 0.25. Volts Volts. C/W o. Note 1: Pulse condition of 100μsec .. Tags: Radar* 1458 datasheet abstract.. |
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First line: A 1458 MDS800 MDS800 Watts, Volts Pulsed Avionics 1090 MDS800 high power COMMON BASE bipolar transistor. designed pulsed systems 1090 MHz, with pulse width duty required MODE-S applications. device gold thin-film metalization emitter ballasting proven highest MTTF. transistor includes input output p Abstract: .. Dissipation Device Dissipation @ 25°C1 1458 W. Maximum Voltage and Current Collector to Base .. BVebo Emitter to Base Breakdown Ie = 30 mA 3.5 V. BVces Collector to Emitter Breakdown Ic = 50 mA 65 V .. Tags: MDS800 ma 1458 A 1458 1458 MDS800 |
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First line: R.1.A.992005-HERICK TCS600 Watts, Volts, Pulsed Avionics 1030 Abstract: .. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C 1458 W Maximum .. BVebo* Emitter to Base Breakdown Ie = 50 mA 3.5 V. BVces Collector to Emitter Breakdown Ic = 100 mA .. Tags: ma 1458 A 1458 1458 TCS600 |
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First line: R.1.A.992005-HERICK TCS600 Watts, Volts, Pulsed Avionics 1030 Abstract: .. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C 1458 W Maximum .. BVebo* Emitter to Base Breakdown Ie = 50 mA 3.5 V. BVces Collector to Emitter Breakdown Ic = 100 mA .. Tags: 1458 TCS600 |
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First line: 10502 Watts, Volts, Pulsed Avionics 1030 1090 10502 high power COMMON BASE bipolar transistor. designed pulsed systems frequency band 1030/1090 MHz, with pulse width duty required MODE-S &TCAS applications. device gold thinfilm metallization diffused ballasting proven highest MTTF. transistor in Abstract: .. Maximum Power Dissipation Device Dissipation @ 25oC1 1458 Watts. Maximum Voltage and Current .. Ie = 50 mA Ic = 100 mA Ic = 5 A, Vce = 5 V. 3.5 65 20. 0.12. Volts Volts. o C/W. Note 1: At rated output power and .. Tags: 1458 datasheet abstract.. |
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First line: An-202 PCA1550A-LF PHASE LOCKED LOOP Abstract: .. mA. Supply Voltage Vcc, nom. Supply Current Icc, typ. All specifications are typical .. 840 1120 1303 1458 1598. PHASE LOCKED LOOP. © Z-Communications, Inc. Page 2 Printed in the U.S.A. .. Tags: An-202 ma 1458 1458 PCA1550A-LF |
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First line: MS2441 MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Abstract: .. PDISS Power Dissipation 1458 W. TJ Junction Temperature +200 ° °C. TSTG Storage Temperature -65 .. ICES VCE = 50V IE = 0mA --- --- 25 mA. HFE VCE = 5V IC = .25A 10 --- 200 --- DYNAMIC DYNAMIC. Symbol Test .. Tags: A 1458 1458 MS2441 |
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First line: Date: 07/20/2010 MAIDA STYLE NUMBER D69ZOV361HC SERIES MAIDA ITEM NUMBER 01-1458 Abstract: .. mA. V. A. A. A. J. J. pF. ns. VDC. ΜΩ. HC SERIES. Lead Style 082J1. X Nominal 0.3. X Tolerance 0.04. Lead Length .. MAIDA ITEM NUMBER 01-1458. 07/20/2010 Date: MAIDA STYLE NUMBER D69ZOV361HC. Coating Type EPOXY .. Tags: D69ZOV361HC |
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First line: LD1558 M1558* motorola 458 Am1558/1458 Dual Frequency Compensated Operational Amplifiers 1558 1458 Dual Frequency Compensated Operational Amplifiers functionally, electrically, pin-for-pin Motorola MC1558 MC1438. Both available hermetic metal package. Distinctive Characteristics 100% reliability ass Abstract: .. 4-92 This Material Copyrighted By Its Respective Manufacturer Am 1558/1458 MAXIMUM RATINGS .. 75 75 £2 Output Short-Circuit Current 25 25 mA Supply Voltage Rejection Ratio RS « 10k„Q 30 150 30 .. Tags: motorola 458 M1558* LD1558 datasheet abstract.. |
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First line: MS2441 SILICON POWER TRANSISTOR MS2441 silicon power transistor, designed high power duty cycle applications. Abstract: .. ICES VCE = 50 V 25 mA. hFE VCE = 5.0 V IC = 0.25 A 10 200 --- PG η η η η C. VCC = 50 V POUT = 400 W f = 1025 - 1150 MHz .. PDISS 1458 W @ TC = 25 °C. TJ -65 °C to +200 °C. TSTG -65 °C to +150 °C. θ θ θ θJC 0.12 °C/W. PACKAGE STYLE .400 .. Tags: 3004 MS2441 |
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First line: AVD400 SILICON POWER TRANSISTOR AVD400 silicon power transistor, designed high power duty cycle applications. Abstract: .. ICES VCE = 50 V 25 mA. hFE VCE = 5.0 V IC = 0.25 A 10 200 --- PG η η η η C. VCC = 50 V POUT = 400 W f = 1025 - 1150 MHz .. PDISS 1458 W @ TC = 25 °C. TJ -65 °C to +200 °C. TSTG -65 °C to +200 °C. θ θ θ θJC 0.12 °C/W. PACKAGE STYLE .400 .. Tags: A 1458 3004 AVD400 |
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First line: 10502 Watts, Volts, Pulsed Avionics 1030 1090 10502 high power COMMON BASE bipolar transistor. designed pulsed systems frequency band 1030/1090 MHz, with pulse width duty required MODE-S &TCAS applications. device gold thinfilm metallization diffused ballasting proven highest MTTF. transistor in Abstract: .. Maximum Power Dissipation Device Dissipation @ 25oC1 1458 Watts. Maximum Voltage and Current .. Ie = 15 mA 3.5 Volts. BVCES Collector to Emitter Breakdown. Ic = 60 mA 65 Volts. ICBO Collector to Base .. Tags: 1030MHz-1090MHz datasheet abstract.. |
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First line: 10502 Watts, Volts, Pulsed Avionics 1030 1090 10502 high power COMMON BASE bipolar transistor. designed pulsed systems frequency band 1030/1090 MHz, with pulse width duty required MODE-S &TCAS applications. device gold thinfilm metallization diffused ballasting proven highest MTTF. transistor in Abstract: .. Maximum Power Dissipation Device Dissipation @ 25oC1 1458 Watts. Maximum Voltage and Current .. Ie = 15 mA 3.5 Volts. BVCES Collector to Emitter Breakdown. Ic = 60 mA 65 Volts. ICBO Collector to Base .. Tags: 1030MHz-1090MHz ma 1458 C 10502 1090mhz* datasheet abstract.. |
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First line: V585ME05-LF Applications Satellite Communications Test Instrumentation Application Notes Abstract: .. mA. Supply Voltage Vcc, nom. Supply Current Icc 30. Satellite Communications Test .. 840 1120 1303 1458 1598 1733 1864 1987 2092 2171 2225. FREQUENCY MHz Physical Dimensions. Z .. Tags: datasheet abstract.. |
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First line: 1598 package V585ME05-LF Applications Satellite Communications Test Instrumentation Application Notes Abstract: .. mA. Supply Voltage Vcc, nom. Supply Current Icc 30. Satellite Communications Test .. 840 1120 1303 1458 1598 1733 1864 1987 2092 2171 2225. FREQUENCY MHz Physical Dimensions. Z .. Tags: 1598 package datasheet abstract.. |
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First line: ma 1458 Signetics Integrated Circuits Operational Amplifiers NE538 Series-High Slew Rate Operational Amplifiers; INTRODUCTION 538/5538 generation operational amplifiers featuring high slew rates combined with improved input characteristics. Internally compensated gains larger, SE538/SE5538 offer gua Abstract: .. as 741 single 5538 same as 747, 1458 dual MAXIMUM RATINGS1' 2 CONNECTION DIAGRAM PARAMETER .. For supply voltages less than ± 15V, the absolute ma cimum input voltage is equal to the supply .. Tags: ma 1458 datasheet abstract.. |
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First line: a1458* a1458 M1558* 1n9638 FD6666 CHILD Schlumberger Company juA1458 /UA1558 Dual Internally Compensated Operational Amplifiers Linear Division Operational Amplifiers ;uA1458, /uA1558 monolithic pair internally frequency compensated high performance amplifiers constructed using Fairchild Planar Epit Abstract: .. Current 0.5 PA tlB Input Bias Current 1.5 MA Avs Large Signal Voltage Gain Vo = ±10 V, RL>2.0 kn 25 .. 1A 1458. !1A 1558 are a monolithic pair of internally frequency compensated high performance .. Tags: FD6666 1n9638 M1558* a1458 a1458* datasheet abstract.. |
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First line: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER TA75072P TA75072F J-FET input low-noise operational amplifiers with input bias offset current, fast slew rate wide bandwidth. TA75072P compatible with TA75458P 1458. TA75072F mini-flat package. TA75072P Abstract: .. The TA75072P is pin compatible with the TA75458P and 1458. The TA75072F is mini-flat package .. Loop - 3 - MHz Supply Current ICCtlEE - - - 2.8 5.0 mA Equivalent Input Noise Voltage VNI - Rs-lkn, f .. Tags: datasheet abstract.. |
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First line: LMI* lmi*458 THOMSON SEMICONDUCTORS DUAL OPERATIONAL AMPLIFIERS LM1458 LM1558 high performance monolithic dual operationa amplifiers constructed single silicon chip. They intended widf range analog applications. Summing amplifier Voltage follower Integrator Active filter Function generator high gain Abstract: .. LM 1458 f oner - 55 to » 125 0 to + 70 °c Storage temperature range J J LM1558 LM1458 Tstg - 65 to + 150 .. Supply current 1 'cc- 'cc - 2 3 5 - 2.3 5.6 mA Input voltage range V| ± 12 ? 13 ±12 + 13 - V Common-mode .. Tags: lmi*458 LMI* datasheet abstract.. |
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First line: SD 1470 4l stud TELECOM DATA COMMUNICATIONS SGS-THOMSON TO-39 TQ-60 .380 NARROW STUD .500 STUD .280 STUD .550 STUD .380 STUD .450 4LFL .500 6LFL Abstract: .. BIAS V1/I1 V mA Pout min W 'o MHz P|n W Gp min dB IMO 3 tones dB Cttb max pF "th J .. 500 4L STUD CE 28/2500 14 225 1.75 9 —55 80 1.5 SD 1458* .500 6LFL CE 28/2500 14 225 0.6 14 —53 80 .. Tags: 4l stud SD 1470 datasheet abstract.. |
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First line: 1458 1558 Dual General Purpose Operational Amplifiers RM1558 RC1458 integrated circuits high gain operational amplifiers internally compensated constructed single silicon chip using planar epitaxial process. military version, RM1558, operates over temperature range from -550C commercial version, RC1 Abstract: .. -INPUT B OUTPUT IB V* 1*46 [RAYTHEON^ 1458 Dual 741 General F'urpose Operational Amplifier .. Current ID 3.3 5.6 5 7.5 3.3 5.6 2.5 mA Open Loop Voltage Gain avol 50 200 25/15* 45 70 50 200 25/15* V .. Tags: CD 741 datasheet abstract.. |
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First line: EE-16 AIJ 103 CA5260 BiMOS HARRIS )\' valili Abstract: .. ry INPUT ÎAi I— Juslry standard 1458 T\ v* T| OUTPUT B "ol JÜ INPUT B ® Vs-15V, OV © VCM=0~»1V ® .. 2 -1. 7—+1. 7 -2—»2. 2 -1. 7~»1. 7 mA Is ® 1.6 2 1.6 2 nA 7A-1/-Y SR ® 5 / 5 / Wus «mass* GBW / / / / MHz fT 3 / 3 .. Tags: AIJ 103 EE-16Â datasheet abstract.. |
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First line: SD1541-09 DESIGNED HIGH POWER PULSED APPLICATIONS WATTS (min.) 1030/1090 MIN. GAIN REFRACTORY GOLD METALLIZATION BALLASTING THERMAL RESISTANCE RELIABILITY RUGGEDNESS 30:1 LOAD VSWR CAPABILITY SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION Abstract: .. PDISS Power Dissipation 1458 W. TJ Junction Temperature +200 ΥC. TSTG Storage Temperature - 65 to .. ICES VCE = 50V IE = 0mA — — 25 mA. hFE VCE = 5V IC = .25A 5 — 200 — DYNAMIC. TYPICAL PERFORMANCE. POWER .. Tags: SD1541-09 |
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First line: SD1541-01 DESIGNED HIGH POWER PULSED APPLICATIONS (min.) 1025 1150 MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING THERMAL RESISTANCE RELIABILITY RUGGEDNESS 30:1 LOAD VSWR CAPABILITY SPECIFICIED OPERATING CONDITIONS INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION Abstract: .. PDISS Power Dissipation 1458 W. TJ Junction Temperature +200 ΥC. TSTG Storage Temperature - 65 to .. — — 25 mA. hFE VCE = 5V IC = .25A 5 — 200 — DYNAMIC. TYPICAL PERFORMANCE. POWER OUTPUT vs POWER INPUT .. Tags: sd1541-1 SD1541-01 |
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First line: LM1458AN LM1458/A/l/AI (KA1458) DUAL OPERATIONAL AMPLIFIER DUAL OPERATIONAL AMPLIFIERS LM1458 series dual general purpose operational amplifiers, having short circuits protected require external components frequency compensation. High common mode voltage range absence "latch make LM1458 Ideal v Abstract: .. ± 12 ± 14 5.6 ±11 ±14 RS<10K £1 ± 10 ± 13 ±9 ± 13 V Output Short Circuit Current Isc 20 20 mA .. LM14581AliIAI KA 1458 DUAL OPERATIONAL AMPLIFIER ELECTRICAL CHARACTERISTICS Vcc .. Tags: LM1458AN datasheet abstract.. |
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First line: AF 289 Thomson* c3228 transistor power t 3866 transistor WIDEBAND CLASS RADIO LINKS APPLICATIONS THOMSON SEMICONDUCTEURS Abstract: .. Vl l V mA n. p.. min W f" MI~z Pin W Gp min dB IMO C22b 3'.. max dB pF 11th 1 .. SO 1455 SO 1458' SO 1459. ~~C5~~00_ TH 597 TeC 598 THB 598' TOS 570 lOS 571 TOS 595. ,500 41 STUD .. Tags: t 3866 transistor c3228 transistor power Thomson* AF 289 datasheet abstract.. |
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First line: ne5538n* ＮＥ５５３８* ＮＥ５５３８ Signetics Integrated Circuits Operational Amplifiers NE5538 Series Dual High Slew Rate Operational Amplifiers 538/5538 generation operational amplifier:; featuring high slew rates combined with improved input characteristics. Internally compensated gai Abstract: .. and 1458. FEATURES • 2mV max input offset voltage • 60nA max input offset curr.ent • Short .. 0 t tt15 mA. :;;::~:~----~-. \ I \ TERMINAL CONNECTION'; PIN 1 - INPUT PIN 2 - OUTPUT CASE - GROUND .. Tags: ＮＥï¼ï¼ï¼ï¼ ＮＥï¼ï¼ï¼ï¼* ne5538n* datasheet abstract.. |
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First line: t 3866 transistor C22B wideband class radio links applications applications large bande VHF-UHF, classe contre mesure faisceaux hertziens 1H0MS0N-CSF Pout Frequency C22b (j-o) TYPE PACKAGE CONFIG. range (MHz) (dB) (pF) .280 STUD 526* .375 STUD 519* .375 STUD 1,75 Abstract: .. 500 4L STUD CE 28/2500 14 225 1,75 9 -55 80 1,5 SD 1458* .500 6LFL CE 28/2500 14 225 0,6 14 -53 80 1,5 .. min V1/ 1 1 V mA W to MHz Pin W Gp min dB IMD 3 tones 1 dB C22b max pF Rth j- : DC .. Tags: C22B t 3866 transistor datasheet abstract.. |
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First line: 3X14 TS13AF Abstract: .. μF Contents ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA. 0.10 0R1 5x12 1.5 5x12 3 .. 1000 102 10x17 681 10x17 773 10x21 928 13x22 1019 13x27 1050 16x33 1458 16x36 1557. 2200 222 13x22 .. Tags: 3X14 TS13AF |
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First line: Series Leakage Current Type 2000 hours assured. impedance characteristics Very leakage current Abstract: .. μF Contents φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA. 0.10 0R1 5×12 1.5 5×12 3 5 .. 1000 102 10×17 681 10×17 773 10×21 928 13×22 1019 13×27 1050 16×33 1458 16×36 1557. 2200 222 13×22 .. Tags: datasheet abstract.. |
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First line: 8X13 TS13AF Abstract: .. μF Contents ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA. 0.10 0R1 5x12 1.5 5x12 3 .. 1000 102 10x17 681 10x17 773 10x21 928 13x22 1019 13x27 1050 16x33 1458 16x36 1557. 2200 222 13x22 .. Tags: 8X13 capacitors 8x16 TS13AF |
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First line: TS13AL Abstract: .. μF Contents ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA ΦDxL mA. 0.10 0R1 5x12 1.5 5x12 3 .. 1000 102 10x17 681 10x17 773 10x21 928 13x22 1019 13x27 1050 16x33 1458 16x36 1557. 2200 222 13x22 .. Tags: TS13AL |
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First line: Series Leakage Current Type Very leakage current. impedance characteristics. Abstract: .. μF Contents φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA φD×L mA. 0.10 0R1 5×12 1.5 5×12 3 5 .. 1000 102 10×17 681 10×17 773 10×21 928 13×22 1019 13×27 1050 16×33 1458 16×36 1557. 2200 222 13×22 .. Tags: SOLI ELECTRONICS INDUSTRY 2089 pdf datasheet abstract.. |
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First line: NTE7141* NTE7141 Integrated Circuit Dual BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output Description: NTE7141 dual, operational amplifier 8-Lead Mini-DIP type package that combines advantages bipolar transistors same monolithic chip. gate-protected MOSFET (PMOS) input transistors provide Abstract: .. 1458 in Most Applications Operation From 4V–to–36V Single or Dual Supplies Characterized for .. TA = –40° to +85°C – 8.4 – mA. Total Device Dissipation PD TA = +25°C – 240 360 mW. TA = –40° to +85°C – 252 .. Tags: NTE7141* ma 1458 A 1458 NTE7141 |
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First line: ma 1458 HZM3.3WA ADE-208-1458 Rev.0 Oct. 2001 Features HZM3.3WA devices, absorb external -surge. MPAK Package suitable high density surface mounting. Abstract: .. ADE-208-1458 Z Rev.0. Oct. 2001. Features. • HZM3.3WA has two devices, and can absorb external .. Dynamic resistance rd — — 130 Ω IZ = 5 mA. ESD-Capability * 2 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward .. Tags: ma 1458 ADE-208-1458 |
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First line: KMM374F320(8)0CK1 KMM374F320(8)0CK1 Mode without buffer DRAM DIMM with Using 16Mx4, Refresh, 3.3V Abstract: .. V V °C W mA. RECOMMENDED OPERATING CONDITIONS Voltage referenced to VSS, TA = 0 to 70°C *1 : VCC+1 .. 1638 1458. mA mA. ICC5 Don′t care - 18 - 18 mA. ICC6. -5. -6. -- 1998 1818. -- 1998 1818. mA mA. II L IO L Don .. Tags: KMM374F320 |
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First line: TCA 325 A tca 315 TBB1458* tca 311 TBB 1458 Operational amplifiers with input Single amps Type Operating range Characteristics 7"amb l/s=15 Package outlines ^amb dvq/dtr configu- Type V/jis ration, figure -25. TAA861 Abstract: .. Ko dvq/dtr fie Gvo Pin configu- Type V °c mA mV |iA V/jis V dB ration, figure TA A 761 G* ±1,5 .. .70 - ±6 0,08 0,5 ±13 100 7 SO 8 Dual op amps TBB 1458 G ±4.. ±18 0.. 70 - ±6 0,08 0,5 ±13 100 3 .. Tags: TBB 1458 tca 311 TBB1458* tca 315 TCA 325 A datasheet abstract.. |
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First line: 230v Part Number L01-6300 L01-6301 L01-6302 L01-6303 L01-6304 L01-6305 Part Number L01-6310 L01-6311 L01-6312 L01-6313 L01-6314 L01-6315 Part Number L01-6320 L01-6321 L01-6322 L01-6323 L01-6324 L01-6325 Part Number L01-6330 L01-6331 L01-6332 L01-6333 L01-6334 L01-6335 Part Number L01-6340 L01-6341 L Abstract: .. L01-6371 2 x 9V 1944 mA 2 x 10.6V 2 x 0.32Ω Weight total = 590 g. L01-6372 2 x 12V 1458 mA 2 x 14.0V 2 x 0.53Ω Weight Cu = 187 g. L01-6373 2 x 15V 1167 mA 2 x 17.6V 2 x 0.84Ω Efficiency = 82% L01-6374 2 x 18V 972 mA 2 x .. Tags: 230v datasheet abstract.. |
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First line: LSI 1078 IC 1458 op datasheet and application HTG13Q0/HTG13A0 4-bit Microcontroller Operating voltage: 2.4V~3.3V input lines output lines oscillator system clock program data segment driver, bias, duty working registers 8-bit programmable timer with built-in frequency source Abstract: .. 27 359.55 ‐1458.90 62 28.80 1459.80. 28 499.05 ‐1458.90 63 ‐101.70 1459.80. 29 638.55 ‐1458.90 64 .. Port A & BZ & BZ Output Source Current 3V VDD=3V, VOH=2.7V ‐0.8 ‐1.5 — mA. IOL2. Segment 0~17 Output .. Tags: IC 1458 op datasheet and application LSI 1078 HTG13Q0 HTG13A0 |
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First line: TBB 1458 TAE2453A P-DSO-8 TBB 1458 P TAE 2453 A Dual Operational Amplifiers 2453 2453 Features Bipolar Supply voltage range between (1.8 current consumption, typ. Extremely large control range output saturation voltage, almost independent load current Output current (max. Abstract: .. 100 mA • Output virtually short-circuit proof • Wide common-mode voltage range • Wide .. A; G • Pin-compatible to TBB 1458 B • The characteristic curves of the electric parameters .. Tags: TAE 2453 A TBB 1458 P P-DSO-8 TAE2453A TBB 1458 datasheet abstract.. |
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First line: 0404B professional audio power amplifier schematics NE55321* Internally-compensated dual noise operational amplifier NE/SE5532/5532A 5532 dual high-performance noise operational amplifier. Compared most standard operational amplifiers, such 1458, shows better noise performance, improved output driv Abstract: .. Compared to most of the standard operational amplifiers, such as the 1458, it shows better .. mA mA Vcm Common-mode input range ±12 ±13 ±12 ±13 V CMRR Common-mode rejection ratio 80 100 70 100 .. Tags: NE55321* professional audio power amplifier schematics 0404B datasheet abstract.. |
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First line: NE5532N applications NE 5532 pinout professional audio power amplifier schematics NE5532 pinout Internally-compensated dual noise operational amplifier NE/SE5532/5532A Abstract: .. Compared to most of the standard operational amplifiers, such as the 1458, it shows better .. Over temperature 13 mA. VCM Common-mode input range ±12 ±13 ±12 ±13 V. CMRR Common-mode rejection .. Tags: professional audio power amplifier schematics NE 5532 pinout SE5532 NE5532N applications NE5532AN NE5532 pinout NE5532 5532A NE SE5532 5532A |
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First line: ci 741 amplifier operational ci 4558 RS 4558 NE5530N ANALOG DIVISION MARCH 1982 HIGH SLEW RATE OPERATIONAL AMPLIFIER NE/SE530/5530 530/5530 generation operational amplifiers featuring high slew rates combined with Improved input characteristics. Internally compensated, SE530/5530 guarantee slew rate Abstract: .. as the 741, 747, 1458, 4558 and LF356 types. ABSOLUTE MAXIMUM RATINGS FEATURES • Gain .. mA Output resistance 100 100 !! Supply current Each amplifier Over temperature 2.0 2.2 3.0 3.6 2 .. Tags: NE5530N RS 4558 ci 4558 ci 741 amplifier operational datasheet abstract.. |
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First line: 5754 datasheet bq294xy* bq20z70-V110 SLUS742 OCTOBER 2006 REVISED OCTOBER 2006 1.1-COMPLIANT GAUGE ENABLED WITH IMPEDANCE TRACKTM TECHNOLOGY WITH bq29330 Abstract: .. 1st Level Safety 1 Current 0 OC 1st Tier Chg I2 0 20000 6000 mA. 1st Level Safety 1 Current 5 OC 1st .. Ra Table 88 R_a0 30 Cell0 R_a 14 I2 0 32767 1458 2^-10ohm. Ra Table 89 R_a1 0 Cell1 R_a flag H2 0x0000 .. Tags: bq294xy* 5754 datasheet TDA 2010 RESISTOR, 10 OHM, 5%, 1W, MO ROHS ma 1458 in-line fuse to permanently disable the battery 1 i2 200-5 BQ20Z70PW-V110 BQ20Z70 65535 bq29330 |
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First line: 5754 datasheet 1/tda 1458 i2 200-5 TDA 11136 bq20z70 SLUS686A NOVEMBER 2005 REVISED JUNE 2006 1.1-COMPLIANT GAUGE ENABLED WITH IMPEDANCE TRACKTM TECHNOLOGY WITH bq29330 Abstract: .. 0 Dsg Current Threshold I2 0 2000 50 mA. Gas Gauging 81 Current Thresholds 2 Chg Current Threshold .. Ra Table 88 R_a0 30 Cell0 R_a 14 I2 366 366 1458 2^-10ohm. Ra Table 89 R_a1 0 Cell1 R_a flag H2 0x0 0x0 .. Tags: TDA 11136 i2 200-5 1/tda 1458 5754 datasheet 1/TDA 7500 tda 2005 bq29330 |
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First line: 5532 philips professional audio power amplifier schematics Internally compensated dual noise operational amplifier 5532/5532A Small-signal bandwidth: 10MHz Output drive capability: (rms) Input noise voltage: 5nV/ (typical) voltage gain: 50000 Abstract: .. Compared to most of the standard operational amplifiers, such as the 1458, It shows better .. | Input resistance 30 300 kn I SC Output short-circuit current 10 38 60 5 80 mA Ico Supply current .. Tags: professional audio power amplifier schematics 5532 philips 5532* datasheet abstract.. |
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