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First line: HY57V168010C hy57v168010c* hy57v168010* hy57v16801* HY57V168010C Banks Synchronous DRAM Hyundai HY57V168010C 16,777,216-bits CMOS Synchronous DRAM, ideally suited main memory applications which require large memory density high bandwidth. HY57V168010C organized 2banks 1,048,576x8. HY57V168010C offer Abstract: .. HY57V168010C. 2 Banks x 1M X 8 Bit Synchronous DRAM. This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility .. Tags: hy57v16801* hy57v168010* hy57v168010c* HY57V168010C	114.31 Kb	11 Pages	Original

First line: 9818* KM48S2020CT-GL Siemens 9832 KM48S8030BT-GL nn5264805tt-b60* PC100 SDRAM Component Testing Summary part Intel' enabling process, following test/characterization procedure been implemented PC100 SDRAM components. small sample components (2-5 devices) have been tested under conditions described T Abstract: .. Hyundai 16M - 2Mx8 HY57V168010C TC-10S 9801TA HY57V168010CTC-10P 9807 pass all parameters tested. LG 16M - 2Mx8 GM72V16821DT-7K 9809 pass all parameters tested. Mitsubishi 16M - 2Mx8 M5M4V16S30DTP .. Tags: KM48S8030BT-GL KM48S2020CT-GL 9818* v54c365804vbt8pc transistor 9822 TC59SM708FT-80* TC59S6416* smart modular Siemens 9832 samsung 810 NT56V1680A0T nn5264805tt-b60* NANYA M56V* datasheet abstract..	48.44 Kb	8 Pages	Original