REPETITIVE AVALANCHE dv/dt RATED Current; Sense Power MQSFET
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Provisional Data Sheet PD-9.502A
REPETITIVE AVALANCHE dv/dt RATED
Current; Sense Power MQSFET
KELVIN SOURCE
N-CHANNEL
CURRENT SENSE
Volt, 0.055 Current Sense Plastic Package Similar T0-220
Power MOSFETs incorporate current sensing feature, obtained isolating cells structure. addition well established characteristics HEXFETs, they provide accurate fraction drain current feedback parameters control and/or protection.
Fields applications include: current mode motor control; power supplies using flyback push pull topology; uninterruptible power systems; instrumentation; solid state relays; deflection, solenoid lamp drive circuits.
HEXFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry unique processing HEXFET design achieve very on-state resistance combined with high transconduc-tance great device ruggedness.
Product Summary
Part Number BVDSS RDS(on)
IRC150 100V 0.140 30A*
Features:
2.5% Sensing Accuracy
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Similar JEDEC Outline TO-204AE (Modified TO-3)
Dimensions Millimeters (Inches)
E-45
IRC150 Device
4aSS4S5 T-39-13
Shown below typical circuit applications HEXSense power MOSFETs. more detailed description, refer application notes AN-959, AN-961, AN-962 AN-963. Additional technical assistance available from applications engineering department.
Typical Current Sensing Circuits
E-46
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