PD-92004 Switch Mode Power Supply SMPS Uninterruptable Power
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International Rectifier
PD-92004
Switch Mode Power Supply SMPS
Uninterruptable Power Supply
High speed power switching
Gate Charge results Simple Drive Requirement
Improved Gate, Avalanche dynamic dv/dt Ruggedness
Fully Characterized Capacitance Avalanche Voltage Current
Effective Coss specified 1001
IRF740A
Power MOSFET
Vdss Rds(on)
400V
Absolute Maximum Ratings
Parameter Max. Units
Id@Tc Continuous Drain Current,
Continuous Drain Current,
Pulsed Drain Current
PD@Tc Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dv/dt Peak Diode Recovery dv/dt V/ns
Tstg Operating Junction Storage Temperature Range
Soldering Temperature, seconds (1,6mm from case
Mounting torqe, 6-32 screw lbf-in (1.1
Typical SMPS Topologies:
Single transistor Flyback Xfmr. Reset
Single Transistor Forward Xfmr. Reset
Both Line Input only
Notes through page www.irf.com
9/14/99
IRF740A International
Rectifier
Static (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250|iA
AV(br)DSS/ATJ Breakdown Voltage Temp. Coefficient 0.48 Reference
RDS(on) Static Drain-to-Source On-Resistance 0.55 10V, 6.0A
VGS(th) Gate Threshold Voltage VGS, 250|iA
tass Drain-to-Source Leakage Current 400V, 320V,
tass Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage -100 -30V
Dynamic (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 50V, 6.0A
Total Gate Charge 320V 10V, Fig.
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time 200V Fig.
Rise Time
td(off) Turn-Off Delay Time
Fall Time
Input Capacitance 1030 1.0MHz, Fig.
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance 1490 10V, 1.0MHZ
Coss Output Capacitance 320V, 1.0MHz
Coss Effective Output Capacitance 320V
Avalanche Characteristics
Parameter Typ. Max. Units
Single Pulse Avalanche
Avalanche
Repetitive Avalanche 12.5
Thermal Resistance
Parameter Typ. Max. Units
Rejc Junction-to-Case
Rees Case-to-Sink, Flat, Greased Surface 0.50
ReJA Junction-to-Ambient
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current (Body Diode) MOSFET symbol showing integral reverse G_\. junction diode.
Pulsed Source Current (Body Diode)
Diode Forward Voltage 10A,
Reverse Recovery Time di/dt 100A/|is
Reverse RecoveryCharge
Forward Turn-On Time Intrinsic turn-on time negligible (tum-on dominated Ls+Ld)
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International
Rectifier
IRF740A
Drain-to-Source Voltage
V[}g, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
10.0
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics Normalized On-Resistance
Temperature
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IRF740A
IRF740A International
Rectifier
100000
10000
1000
Ciss =Cgs+Cgd' SHORTED Crss =Cad
Coss Cds+(
Coss
1000 Vpg, Drain-to-Source Voltage
TEST CIRCUIT FIGURE
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
VsD,Source-to-Drain Voltage
IOPERATION THIS AREA LIMITED
Single Pulse
DS(on)
10us
100us
10ms
Vpg, Drain-to-Source Voltage
1000
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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International
Rectifier
IRF740A
Case Temperature
Maximum Drain Current Case Temperature
t-vdd
10a. Switching Time Test Circuit
td(on) td(off)
10b. Switching Time Waveforms
0.00001
Notes:
Duty factor ti/t2
PeakT Zthjc
0.0001
0.001 0.01 t-|, Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF740A
12a. Undamped Inductive Test Circuit
V(br)dss
12b. Undamped Inductive Waveforms
Charge
13a. Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
.3(1
VGS>
Current Sampling Resistors
13b. Gate Charge Test Circuit
IRF740A International
Rectifier
1400
-B1200
4.5A 6.3A TTnM
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
10.0 ly^y Avalanche Current
Fig12d. Typical Drain-to-Source Voltage Avalanche Current
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International
Rectifier
IRF740A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations
Stray Inductance
Ground Plane
Leakage Inductance Current Transformer
-HAM-
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive
Reverse
Recovery
Current
Re-Applied -Voltage
-p.w-
Period
Period
VGS=10V
D.U.T. Waveform
Body Diode Forward Current
di/dt
D.U.T. Waveform
Diode Recovery
dv/dt
Body Diode Forward Drop
Inductor Curent
SRIpple
Logic Level Devices
N-Channel HEXFETS
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