Direct Modulation Laser FLD3F11CX Direct Modulated Laser
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1,310nm MQW-DFB
Direct Modulation Laser
FLD3F11CX
Direct Modulated Laser
shifted MQW-DFB chip
Built-in TEC, Thermistor Monitor
14-Pin Butterfly Type Module
Gb/s Transmission Spans
Residual Chirp
Simplifies Driver Design
Optimized Gb/s Modulation Rates
APPLICATIONS
This laser intended application 1,310nm fiber transmission systems. Transmission span 40km possible without amplifications.
DESCRIPTION
(Multiple Quantum Well) Laser high power laser capable Gb/s transmission. packaged "butterfly" type module. module employs high efficiency optical coupling system, coupling laser output through built-in optical isolator into single mode fiber pigtail. modules also include monitor photodiode, thermoelectric cooler (TEC) thermistor.
long haul Gb/s
Edition
March 1999
FLD3F11CX
1,310nm MQW-DFB
Direct Modulation Laser
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Storage Temperature Tstg
Operating Case Temperature
Optical Output Power
Laser Forward Current
Laser Reverse Voltage
Photodiode Forward Current
Photodiode Reverse Voltage
Voltage
Current
Lead Soldering Time Tsold
Operating Storage Humidity xop,
THERMISTOR CHARACTERISTICS
(Thermistor Resistance 10.0kQ, unless otherwise specified)
Parameter Symbol Limits Unit Conditions
Min. Max.
Cooler Capacity Pf=2.0
Current Pf=2.0
Voltage Pf=2.0
Cooler Power Ptec Pf=2.0
Resistance Rtec Pf=2.0
Thermistor Resistance 10.5
Thermistor Constant 3,270 3,630
FUJITSU
Edition
March 1999
1,310nm MQW-DFB
Direct Modulation Laser
FLD3F11CX
OPTICAL ELECTRICAL CHARACTERISTICS
(Thermistor Resistance 10.0kQ, unless otherwise specified)
Parameter Symbol Limits Unit Conditions
Min. Max.
Threshold Current
Forward Voltage (pin 12,13) VFDC 1.84 p=30
Series Resistance (pin 12,13)
Reverse Voltage Ir<1500hA
Optical Output Power
Slope Efficiency 0.06 mW/mA Pf=2.0
Threshold Power lF=lth,
Tracking Error Imon -0.5 +0.5 Pf=2.0mW, Tc=-20 (Note
Monitor Current 0.15 Pf=2.0mW, Vdr=5V
Photodiode Dark Current Vdr=5V
Photodiode Capacitance Vdr=5V,
Photodiode Cutoff Frequency Vdr=5V, load
Peak Wavelength 1,290 1,330 Gb/s pseudo-random, lb=0.8 Ppeak=2.0
SideMode Suppression Ratio
Spectral Width (-20
Rise Time (10%-90%) 0.125 nsec
Fall Time (10%-90%) 0.125 nsec
Cutoff Frequency Pf=2
In-Band Ripple (Window) f=50 MHz-3
Return Loss f=45 MHz-3
GHz-5
Optical Isolation Tc=-20
Relative Intensity Noise -135 dB/Hz f=0.5 Pf=2.0 ORL=24
Kinks (upto None
Pulsation None
Performance Floor Note
Note
rate=2.48832 Gb/s, PRBS=223"1, Input power measurement dBm, Dispersion=-240 ps/nm, Laser bias current^.SI^ TL=10 Output Power=2.0mW peak, Test time=400sec. each, Specification Mmit=1 x10"12
Edition
March 1999
FUJITSU
FLD3F11CX
1,310nm MQW-DFB
Direct Modulation Laser
Fig. Forward Current Output Power
Fig. Tracking
Forward Current, (mA)
-0.1
-0.P
-0.3
-0.4
-0.5
Case Temperature,
Fig. Frequency Response
Fig. Return Loss
Frequency (GHz)
Frequency (GHz)
FUJITSU
Edition
March 1999
1,310nm MQW-DFB
Direct Modulation Laser
FLD3F11CX
Fig. Relative Intensity Noise
Fig. Cooler Voltage -Current
-110 -120
-130
-140
-150 -160 -170
fyiy
Frequency (GHz)
-1.0
Cooler Temperature
Fig. Opening
Decision Point (psec)
2.48832 Gb/s, PRBS 223"1
lmod=30mA lb=0.8, Dispersion=300ps/nm
Fig. Spectrum
Edition
March 1999
FUJITSU
FLD3F11CX
1,310nm MQW-DFB
Direct Modulation Laser
"CX"PACKAGE
UNIT:
Pigtail length shall specified detail (individual) specification, special. L=1500 min. standard
VIEW
(Preliminary)
FUNCTION
Temperature Monitor
Temperature Monitor
Laser Bias
Monitor (Anode)
Monitor (Cathode)
TEHP
TEHP
Case Ground
Case Ground
N.C.
Laser Ground
Laser Modulation
Case Ground
N.C.
further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas R.O.W.
2355 Zanker
Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
Schanck Road, Suite
Freehold, 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures:
this product into mouth.
alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed.
Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
FUJITSU MIIKR0ELCTR0NIK GmbH
Quantum Devices Division Network House Norreys Drive
Maidenhead, Berkshire 4FJ, Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD. Asia Japan
2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan
Phone: 3-5322-3356 FAX: 3-5322-3398
Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others.
1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed U.S.A. FCSI0199M200
FUJITSU
Edition
March 1999
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