PHILIPS INTERNATIONAL push-pull power transistor BLV948 Doub
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7110821, D0b31t,4 BIPHIN Philips Semiconductors_Product specification
PHILIPS INTERNATIONAL
push-pull power transistor BLV948
Double input output matching easy matching high gain
Poly-siiicon emitter-ballasting resistors optimum temperature profile
Gold metallization ensures excellent reliability.
silicon planar epitaxial transistors push-pull configuration, intended linear common emitter class-AB operation base station transmitters range.
transistor encapsulated 4-lead SOT262A2 flange envelope, with ceramic caps. flange provides common emitter connection both transistors.
PINNING -SOT262A2
collector
collector
base
base
emitter (connected
flange)
QUICK REFERENCE DATA
performance common emitter test circuit.
MODE
OPERATION (MHz) (dB) (dBc)
class-AB
>6.5
2-tone, class-AB (PEP) >7.5
150(PEP) >7.5 <-22
WARNING
Product environmental safety toxic materials
This product contains beryllium oxide. product entirely safe provided that discs damaged. persons handle, dispose this product should aware nature necessary safety precautions. After use, dispose chemical special waste according regulations applying location user. must never thrown with general domestic waste.
Fig.1 Simplified outline symbol.
January 1993
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.bSE
Philips Semiconductors PHILIPS INTERNATIONAL push-pull power transistor
711002b 00b31b5
IPHIN
Product specification
BLV948
LIMITING VALUES
accordance with Absolute Maximum Rating System (IEC 134). transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VcBO collector-base voltage open emitter
VCEO collector-emitter voltage open base
VEBO emitter-base voltage open collector
collector current 12.5
'c(AV) average collector current 12.5
total power dissipation Tnj, total device; both sections equally loaded
"'"slg storage temperature
junction temperature
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
j-mb thermal resistance from junction mounting base Plot total device; both sections equally loaded max. 0.55
mb-h thermal resistance from mounting base heatsink total device; both sections equally loaded max. 0.15
(1)T^
Total device; both sections equally loaded. SOAR.
'tot
Continuous operation.
Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.3 Power/temperature derating curve.
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Philips Semiconductors 711062b DDb31titi BiPHIN Product specification PHILIPS INTERNATIONAL push-pull power transistor BLV948
CHARACTERISTICS
unless otherwise specified.
transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
vfflricbo collector-base breakdown voltage open emitter;
vfbrjceo collector-emitter breakdown voltage open base;
v(br)ebo emitter-base breakdown voltage open collector;
'ces collector-emitter cut-off current
current gain
AhFe current gain ratio both sections lc=1.5 0.67
collector capacitance (note!) 0;VCB 25V;f=1
Note
Value that only, measurable because internal matching network.
MBC119
(mA)
VCE=10V.
Fig.4 current gain function collector current, typical values.
MRA314
lE=ie MHz.
Fig.5 Collector capacitance function collector-base voltage, typical values.
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Philips Semiconductorsb 7110 PHIN ProductsPecification push-pull power transistor philips international BLV948
(1)/
VBE(V)
Fig.6 Collector current function base-emitter voltage, typical values.
APPLICATION INFORMATION
performance common emitter test circuit, f^lh mb-h 0.15 K/W.
MODE
OPERATION (MHz) (n>A) (dB)
class-AB
typ. typ.
>6.5
typ. typ.
Ruggedness class-AB operation
BLV948 capable withstanding load mismatch corresponding VSWR through phases under following conditions: 0.15 K/W; MHz.
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MPHIN Product specification
push-pull power transistor
BLV948
(dB)
mene
PHILIPS INTERNATIONAL
PL(W)
Class-AB operation:
0.15 K/W; MHz.
Flg.7 Power gain efficiency functions load power, typical values.
Class-AB operation:
mb-h 0.15 K/W; MHz.
Fig.8 Load power function input power, typical values.
(dB)
MtiCiU
Class-AB operation:
mb-h 0.15 K/W; MHz.
Fig.9 Power gain efficiency functions load power, typical values.
Class-AB operation:
mb-h 0.15 K/W; MHz.
Fig.10 Load power function input power, typical values.
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Philips Semiconductors^)
dotait^ PHIN Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
'sss
XC13
*Vbb t^OVTV"
SJHD^-
^Vec
input
_(Ss output
r^f"
iC8f12f
ITC6 TC10 TC14 TC18
V7?.
a-HIhr
a-llhr
MHz.
Fig.11 Class-AB test circuit.
List components (see Figs
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
C33, tantalum capacitor (iF, 2022 00058
C35, C36, C39, multilayer ceramic chip capacitor (note
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PhilipsSemiconductorsLSE 711002b GGb317D BIPHIN Prociuctspecification
push-pull power transistor BLV948
PHILIPS INTERNATIONAL
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
electrolytic capacitor 2222 78108
electrolytic capacitor 2222 75109
C9.C10, C29, C30, C37, tantalum capacitor 2022 00056
C11.C12, C41.C42 multilayer ceramic chip capacitor 2222 76641
C13, multilayer ceramic chip capacitor 2222 76627
C15, multilayer ceramic chip capacitor (note
C17, C18, C19, C20, C31, multilayer ceramic chip capacitor (note
C21, C22, C23, trimming capacitor (Tekelec, type 5201)
C25, multilayer ceramic chip capacitor (note
C27, electrolytic capacitor 10|lF, 2222 28109
L1.L3 stripline (note length 50.7 width
semi-rigid cable (note length 50.7 ext. dia.
stripline (note length width
L6.L7 stripline (note length width
stripline (note length width
L10, L11.L20, stripline (note length width
L12, L13, L18, grade Ferroxcube chip bead 4330 36300
L14, microchoke 4322 02281
L16, turns enamelled copper wire int. dia. close wound
L22, stripline (note length width
L24, stripline (note length width 16/22
L26, stripline (note length width
L28, stripline (note length width
L30, stripline (note length width
L32, stripline (note length 49.3 width
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0C]b3171 Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
semi-rigid cable (note length 49.3 ext. dia.
metal film resistor 5.11 2322 75118
metal film resistor 5.11 2322 55118
Notes
American Technical Ceramics (ATC) capacitor, type 100B other capacitor same quality.
striplines double copper-clad printed circuit board, with PTFE microfibre-glass dielectric 2.2), thickness inch; thickness copper sheet urn.
Cables soldered striplines respectively.
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Philips Semiconductorsb 7110flSb 0Gb317S PHIN Product specification
push-pull power transistor BLV948
PHILIPS INTERNATIONAL
64.5
68.5
components mounted side copper-clad PTFE microfibre-glass board; other side unetched serves ground plane. Earth connections from component side ground plane made through metallization.
Fig. Component layout class-AB test circuit.
January 1993
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Philips Semiconductors
711002b 00L3173
Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
APPLICATION INFORMATION
performance common emitter test circuit. R,hrrfrh 0.15K/W; 2-tone operation.
MODE (PEP)
OPERATION (MHz) (mA) (dB) (dBc)
2-tone, class-AB note >7.5 <-24
typ. typ. typ.
note >7.5 <-22
typ. typ. typ.
Notes
900.0 MHz; 900.1 MHz.
960.0 MHz; 960.1 MHz.
Ruggedness ciass-AB operation
BLV948 capable withstanding load mismatch corresponding VSVVR through phases under following conditions: 0.15 K/W; (PEP); 960.0 MHz;
(dB)
Mf?cri5 Pl(PEP)
Class-AB operation:
26V;Th
Rlhrrf>h 0.15 K/W; 900.0 MHz; 900.1 MHz.
Flg.13 Power gain efficiency functions
peak envelope load power, typical values.
MRC126
(PEP)
(PEP)
Class-AB operation: mb-h 0-15 K/W; 900.0 MHz; 900.1 MHz.
Fig. Peak envelope load poweras function input power, typical values.
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Philips Semiconductors
push-pull power transistor
711002k DDb317H Product specification
BLV948
PHILIPS INTERNATIONAL
(dB)
unci
Pl(PEP)
Class-AB operation:
rrt>h 0.15 K/W; 960.0 MHz; 960.1 MHz.
Fig.15 Power gain efficiency functions peak envelope load power, typical values.
(dBc)
PL(PEP)
Class-AB operation:
mb-h 0.15 K/W; 900.0 MHz; 900.1 MHz.
Fig.17 Intermodulation products functions peak envelope load power, typical values.
"(W)
P1N(PEP)
Class-AB operation:
mb-h 0.15 K/W; 960.0 MHz; 960.1 MHz.
Fig.16 Peak envelope load power function input power, typical values.
<dBc)
PL(PEP)
Class-AB operation:
mb-h 0.15 K/W; 960.0 MHz; 960.1 MHz.
Fig.18 Intermodulation products functions peak envelope load power, typical values.
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Philips Semiconductors
711002b D0b317S Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
J_C9 _1_C13
TC11 TC15
a-HD^-
-II-B
+vcc
input
s-r<
_output
\\t~50
*VBB
ITC6 TC10 TC14 TC18
5ft?
Yy/\
4=f-L19
MHz.
Fig.19 Class-AB test circuit.
List components (see Figs
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
C33, tantalum capacitor (iF, 2022 00058
C35, C36, C39, multilayer ceramic chip capacitor (note
January 1t,J3
This Material Copyrighted Respective Manufacturer
Philips Semiconductorsb 711062b D0b317b MPHIN Product specification push-pull power transistor BLV948
PHILIPS INTERNATIONAL
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
electrolytic capacitor 2222 78108
electrolytic capacitor 2222 75109
C10, C29, C30, C37, tantalum capacitor 2022 00056
C11.C12, C41.C42 multilayer ceramic chip capacitor 2222 76641
C13, multilayer ceramic chip capacitor 2222 76627
C15, multilayer ceramic chip capacitor (note
C17, C18, C19, C20, C31, multilayer ceramic chip capacitor (note
C21, C22, C23, trimming capacitor (Tekelec, type 5201)
C25, multilayer ceramic chip capacitor (note
C27, electrolytic capacitor fJ.F, 2222 28109
L1.L3 stripline (note length 50.7 width
semi-rigid cable (note length 50.7 ext. dia.
stripline (note length width
stripline (note length width
stripline (note length width
L10, L11, L20, stripline (note length width
L12, L13, L18, grade Ferroxcube chip bead 4330 36300
L14, microchoke 4322 02281
L16, turns enamelled copper wire int. dia. close wound
L22, stripline (note length width
L24, stripline (note length width 16/22
L26, stripline (note length width
L28, stripline (note length width
L30, stripline (note length width
January 1993
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Philips Semiconductors
711002b 00b3177 Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE
L32, stripline (note length 49.3 width
semi-rigid cable (note length 49.3 ext. dla.
metal film resistor 5.11 2322 75118
metal film resistor 5.11 2322 55118
Notes
American Technical Ceramics (ATC) capacitor, type 100B other capacitor same quality.
striplines double copper-clad printed circuit board, with PTFE microfibre-glass dielectric 2.2), thickness inch; thickness copper sheet |im.
Cables soldered striplines respectively.
January 1993
This Material Copyrighted Respective Manufacturer
Philips SemiconductorsbS DDb3170 Product specification
push-pull power transistor BLV948
PHILIPS INTERNATIONAL
cioQc^_
,rri9i +vcc
b=<j C400O0C42
|CHpC38
-64.5
-68.5
components mounted side copper-clad PTFE microfibre-glass board; other side unetched serves ground plane. Earth connections from component side ground plane made through metallization.
Fig.20 Component layout class-AB test circuit.
January 1993
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711Dfl5b 00ti317T MPHIN Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
(MHz)
Class-AB operation:
rri>h 0-15 K/W; (total device).
Fig.21 Input impedance function frequency (series components), typical values section.
(MHz)
Class-AB operation:
mb.h 0.15 K/W; (total device).
Fig.22 Load impedance function frequency (series components), typical values section.
Fig.23 Definition transistor impedance.
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7110S2Li D0b31fl0 BPHIN Product specification
push-pull power transistor
BLV948
PHILIPS INTERNATIONAL
gain (dB) MRC113
(MHz) Class-AB operation: mb-h 0.15 K/W; (total device). Fig.24 Gain function frequency, typical values.
gain MRC117
(dB)
(MHz)
Class-AB operation: 2x100 Rftnw, 0.15 K/W; (PEP) (total device).
Gain function frequency, typical values.
January 1993
This Material Copyrighted Respective Manufacturer
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