Wireless Front Components Applications External LNAs 802.15.4/Zig
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Wireless
Front Components Applications External LNAs 802.15.4/ZigBee Range Extension Devices
California Eastern Laboratories serves designers, OEMs contract manufacturers Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, Automated Test Equipment (ATE) markets. With over years experience high frequency positioned provide customers with solutions product lines include: Wireless Semiconductors 802.15.4 ZigBee Transceiver Modules Optocouplers Solid State Relays Fiber Optic Lasers Detectors
LNAs C-Band applications WLAN Wi-Fi Devices WiMAX Devices
GaAs RFIC Switches SPDT Dual Control Switches SPDT Single Control Switches Single Multi-Throw Switches Broadband Switches MobileComm Antenna Switches GaAs FETs RFIC Amplifiers Noise GaAs FETs, 20GHz LowNoiseGaAsRFICAmplifiers GaAsRFICPowerAmplifiers, GaAs Integrated Front GaAs CATV Hybrid Amplifiers Silicon LD-MOSFET Power Devices Silicon Bipolar Transistors Small Signal Silicon Devices Small Signal SiGe Devices Medium Power Transistors Transistors Cordless Phones Twin Transistors, Mixed Matched Silicon Transistor Chips Oscillator Switching Transistors Silicon RFICs LowPowerandWidebandAmplifiers LowNoiseAmplifiers BiCMOS Wideband LNAs with Tx/Rx Bypass AGCAmplifierswithVideoOutput VariableGainAmplifiers DCtoVHFDifferentialAmplifier Frequency Down Converters Out-of-Band Tuners Prescalers (Frequency Dividers)
S-Parameters, SPICE Models, Notes, data sheets, more available cel.com
RFIC Switches
System-on-Chip 802.15.4 Transceiver
Transceiver
UPG225x Front Front Components Applications Power
Amplifiers Wi-Fi Bluetooth ZigBee Automated Meter Reading Mesh Home Area Networks Band applications
LNAs
High Power RFIC Switches
ZIC2410 System-on-Chip 802.15.4 Transceiver
UPG225x Front
UPGxxxx SP3T Switches
Power Amplifiers
Power RFIC Switches
Front
UPG2253T6S UPG2254T6W LNAs GaAs RFIC: cost version UPG2253, miniature
MMIC Transistor Power Amplifiers
UPG2118K 31.5 Three Stage GaAs MMIC UPG2250T5N dBmGaAsMMIC,operatesat1.8or3.0 UPG2301T5L stage GaAs UPG2314T5N current GaAs MMIC UPG2251T6M GaAs MMIC, fully matched NE5500234 Silicon LD-MOSFET: 32.5 POUT NE5511279A Silicon LD-MOSFET: POUT Choose NE5531079A Silicon LD-MOSFET: POUT Single Multi Throw RFIC Switches NESG250134 Watt SiGe NESG260234 Watt SiGe NESG270034 Watt SiGe NE5520379A watt LDMOS FET: 35.5 POUT NE664M04 Watt Silicon Bipolar Transistor Driver NE5520279A LDMOS FET: POUT NESG2101M05 SiGe Bipolar Transistor Driver
Chipset Transceiver
Medium High Power GaAs RFIC Switches
UPG2155TB UPG2009TB UPG2015TB UPG2030TK UPG2179TB UPG2406TK/T6R UPG2404T6Q UPG2405T6Q UPG2413T6M UPG2150T5L SPDT, harmonics, ideal high power applications SPDT, high power, high linearity, compromise performance SPDT, medium power, single control SPDT, industry's best cost, power switch, industry standard SPDT, medium power, choice packages SP3T, high power, ideal triple mode cellular phone, SP3T, miniature package Bluetooth, WLAN, SP3T, isolation between WLAN B'tooth ports
Power CMOS GaAs RFIC Switches
UPD5713TK UPG2159T6R UPG2012TB/TK UPG2214TB/TK LowcostCMOSSPDT, singlecontrol,lowprofilepackage SinglecontrolGaAsSPDT, TBorminiflat-leadTKpackage
Notes: Under development, please inquire
Front Components continued
MMIC Transistor LNAs (Performance 1GHz)
UPD5740T6N UPC3237TK SiGe:CRFIC:1.4 dBNF,15.3 dBGain,forDTV NE662M04 Silicon Bipolar Transistor: Gain NESG2031M05 SiGe Bipolar Transistor: Gain NESG3031M05 SiGe Bipolar Transistor: Gain UPC8233TK SiGe:CRFIC:0.95 dBNF,20 dBGain,1.8VVCC UPG2310TK stage GaAs MMIC: 25.5 Gain, 28.5 OIP3 NESG3032M14 SiGe Bipolar Transistor: 17.5 Gain NESG3033M14 SiGe RFIC Bipolar Transistor: 17.5 Gain, protection NE3508M04 GaAs FET: Transistor LNAs Gain
RFIC Switches
WiMAX Transceiver
WiMAX Transceiver
RFIC LNAs Improved Signal Performance
External LNAs reduce front-end noise improve receiver sensitivity. Combined with tuning distributed filtering they improve noise performance more than 1.5dB over on-chip LNAs.
Multi-Throw Switches
Receiver
Loss Pre-Filter
RFIC
High Rejection Post-Filter
SiGe SiGe:C RFIC LNAs
Part Number Description Supply Voltage (mA) Noise Figure (dB) Tuner/ 1.30 Receiver Gain (dB) IIP3 (dBm) Total External Components Req'd Package
UPC8211TK UPC8215TU UPC8230TU UPC8231TK UPC8232T5N UPC8233TK UPC8236T6N UPC8240T6N UPC8244T6N
Lowcurrent High gain, highly integrated
Filter THIRD FIRST SECOND STAGE STAGE noise distortion, highly integrated STAGE
3-10
18.5 18.5 19.5
-14.5 -8.5 -21.5
T5Nlowprofile T6Nlowprofile T6Nlowprofile T6Nlowprofile
1.30
0.85 0.80 0.95 0.90 0.80
Lownoise¤t,highgain voltage, noise distortion, highly integrated voltage noise, high gain, highly integrated voltage, noise distortion, adjustable current, gain IIP3
0.90 14.5 18.5
Notes: Under development, please inquire
Range Extension Components 802.15.4/ZigBee Applications
Power Amplifiers, LNAs RFIC Switches designed integrate easily with wide variety 802.15.4, ZigBee Bluetooth transceivers including ZIC2410 MeshConnect System-on-Chip transceivers.
LNAs
RFIC Switches
ZIC2410 System-on-Chip 802.15.4 Transceiver
Transceiver
UPG225x Front Power Amplifiers
Front
UPG2253T6S UPG2254T6W
LNAs
GaAs RFIC: cost version UPG2253, miniature
GaAs MMIC Power Amplifiers
UPG2118K UPG2250T5N UPG2251T6M UPG2314T5N UPG2301T5L
UPG225x Front
+31.5 POUT,
High Power RFIC Switches
POUT@1.8 VDD,
POUT V,47% PAE, with matching circuit
ZIC2410 System-on-Chip 802.15.4 Transceiver
POUT, operating current, PAE, variable gain control POUT, PAE, 20dB variable gain control UPGxxxx
SP3T Switches
GaAs RFIC SPDT Switches
UPG2012TK UPG2015TB UPG2030TK UPG2158T5K UPG2179TB UPG2214TB/TK UPG2406T6R UPG2406TK UPG2408TK
Power Amplifiers
Power RFIC Switches
power, single control voltage Medium power, single control voltage, industry-standard package insertion loss, high isolation
LNAs
Mediumpower,1.8 Industry's best medium power SPDT
Mediumpower,1.8 Vcontrolvoltage,0.45 dBInsertionLoss,+22.0 dBmPIN 0.1dB Mediumpower,1.8 2.7Vcontrolvoltage,0.45 dBInsertionLoss
Medium power, 0.48 Insertion Loss, 29dBm 0.1dB
Chipset Transceiver
Transistor MMIC LNAs Choose
NE662M04 NE3508M04 UPC8233TK NESG2031M05 NESG3031M05/M14
Single Multi Throw RFIC Switches SiliconNPNtransistor,1.3 dBnoisefigure,15 dBgain
GaAsHJFET,superlow0.45 dBnoisefigure,14 dBgain SiGe:CMMIC,1.8to3.3 Vcontrolvoltage,1.1 dBnoisefigure,16.5 dBgain SiGeHBT,0.9 dBnoisefigure,17 dBgain SiGeHBT,0.6 dBnoisefigure,16 dBgain
System-on-Chip Transceiver
ZIC2410 Transceiver with 8051 MCU: output power, link budget, scalable data rates
Notes: Under development, please inquire
Receiver
Loss Pre-Filter
Noise Amplifiers C-Band Applications
First, second third stage devices applications from 8GHz
RFIC
High Rejection Post-Filter
Tuner/ Receiver FIRST STAGE
Filter
SECOND STAGE
THIRD STAGE
LNAs Application
Application Frequency 1.575
FIRST STAGE
UPC8211TK UPC8215TU UPC8230TU UPC8231TK UPC8232T5N UPC8233TK UPC8236T6N UPC8240T6N UPC8244T6N NESG3032M14 NE3509M04 /M14 NESG2031M05 NE662M04 NESG2031M05 NE3508M04 NESG2101M05 NESG2031M05 NESG3031M05 NESG3032M14 NE662M04 NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14
SECOND STAGE
THIRD STAGE
Satellite Radio
2.35
NE3508M04 NE3509M04 NE3510M04
NE3508M04 NESG2101M05
WLAN, Wi-Fi, Cordless Phone
NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14
WLAN, Wi-Fi, Cordless Phone
Performance (see Data Tables additional specifications)
Part Number
Description
(dB)
Gain
(dB)
(dBm)
P1dB
Package
Noise, High Gain Silicon RFIC LNAs (specified 1.575 GHz) SiGeRFIC SiGe RFIC SiGe:CRFIC SiGe:CRFIC SiGe:C RFIC SiGe:CRFIC SiGe:C RFIC SiGe:C RFIC
UPC8211TK UPC8215TU UPC8230TU UPC8231TK UPC8232T5N UPC8233TK UPC8236T6N UPC8240T6N UPC8244T6N NE3508M04 NE3509M04 NE3510M04 NE662M04 NESG2021M05 /M16 NESG2031M05 NESG2101M05 NESG3031M05 NESG3032M14 NESG3033M14 NESG4030M14
0.85 0.95 0.95 0.40 0.40 0.35
18.5 27.0 18.5 20.0 17.0 20.0 19.5 28.0 19.0 14.0 17.5 19.0 16.0 17.5 17.5 11.5
-22.5 +18.0 +14.0 +12.0 +12.5 +12.5
SiGe:C RFIC GaAs HJ-FET GaAs HJ-FET GaAs HJ-FET Silicon Transistor SiGe Transistor SiGe Transistor SiGe Transistor SiGe Transistor SiGe Transistor SiGe Transistor SiGe Transistor
Notes: Adjustable current device, under development, please inquire
NE3509M14 under development, please inquire
802.15.4 Transceiver
UPG225x Front
WLAN Wi-Fi
Power Power SP3T Switches Single multi-throw switches discrete Silicon GaAs noise amplifiers designed specifically Dual Band WLAN Amplifiers RFIC Switches
UPGxxxx
LNAs
Chipset Transceiver
Choose Single Multi Throw RFIC Switches
GaAs RFIC Switches Single Multi Throw
UPG2179TB UPG2158TK UPG2406T6R UPG2406TK UPG2418TB
SPDT, Insertion Loss GHz, industry-standard package dBInsertionLoss@2 SPDT, 0.45 Insertion Loss GHz, +22.0 PIN(0.1dB)@+1.8 VCONT dBInsertionLoss@2 SPDT, termination, 0.45 Insertion Loss, Isolation SP3T, Insertion Loss, Isolation between ports SP3T, 0.60 Insertion Loss, Isolation SP3T, Insertion Loss, Isolation GHz, package SP3T, Insertion Loss, Isolation GHz, package
UPG2150T5L UPG2405T6Q UPG2413T6M UPG2413T6Z
GaAs RFIC Switches Broadband
UPG2163T5N UPG2185T6R UPG2411T7C UPG2411T6X
SPDT, Insertion Loss: GHz, SPDT, Insertion Loss: GHz, GHz, Isolation SPDT Dual Band WLAN, Insertion Loss: GHz, SPDT Dual Band WLAN, Insertion Loss: GHz, SPDT Dual Band WLAN, high power, insertion loss Access Point applications DPDT, Insertion Loss: GHz, 0.85 DPDT, Insertion Loss: GHz,
UPG2415TK UPG2162T5N UPG2164T5N
LNAs
NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 NESG4030M14 cost SiGe HBT, Noise Figure, Gain SiGe HBT, Noise Figure, Gain SiGe HBT, Noise Figure, 17.5 Gain SiGe HBT, Noise Figure, 17.5 Gain GHz, built-in protection SiGe HBT, Noise Figure, 11.5 Gain GHz, built-in protection
Notes: Under development, please inquire
WiMAX
Single multi-throw switches transistor RFIC noise amplifiers designed specifically WiMAX
RFIC Transistor LNAs
RFIC Switches
WiMAX Transceiver
WiMAX Transceiver
Multi-Throw Switches
GaAs RFIC Switches
UPG2176T5N UPG2157T5F UPG2409TB UPG2409T6X
Loss Pre-Filter UPG2181T5R
SPDT GHz, Insertion Loss: GHz, GHz, internal termination SPDT GHz, Insertion Loss: GHz, 0.85 GHz, internal termination SPDT GHz, Insertion Loss: 0.45 2.5GHz, Receiver
High Rejection RFIC Post-Filter DP4T antenna diversity switching, Insertion Loss, Isolation
SPDT GHz, Insertion Loss: 0.45 GHz, 0.65
Transistor RFIC LNAs
NESG3031M05 NE3508M04 UPG2310TK High SiGe HBT, Noise Figure, Gain GaAsHJFET,superlow0.45 dBnoisefigure,14 dBgain@2.5 stage GaAs MMIC: 25.5 Gain, 23.5dBm OIP3
Tuner/ Receiver FIRST STAGE
Filter
SECOND STAGE
THIRD STAGE
GaAs RFIC Switches: Single Multi-Throw
SPDT Dual Control Switches
TYPICAL ELECTRICAL CHARACTERISTICS 25°C) Frequency range: Part Number UPG2009TB UPG2030TK
UPG2155TB UPG2158T5K UPG2159T6R
Features High Power/High Linearity MediumPower,Versatile High Power, Harmonics Medium Power, Small
Insertion Loss, Small Industry's best medium power HiPerfomance@3.0or1.8 HiPerfomance@3.0or1.8 Medium Power, Band Medium Power, Small
Control Voltages +2.8/0 +2.8/0 +2.6/0 +1.8, 2.7/0 +1.8, 2.7/0 +3.0/0 +1.8, 3.0/0 +1.8, 3.0/0 +1.8,2.7/0 2.7/0 +3.0/0 +3.0/0
Insertion Loss @2GHz (dB) 0.30 0.30 0.40 0.45 0.23 0.30 0.30 0.30 0.45 0.45 0.48 0.45
Isolation Input Power @2GHz @0.1 (dB) compression point 37dBm 29dBm 29dBm 29dBm 29dBm
Input Power @1.0 compression point 30dBm 30.5dBm 25.5 (1.8V),26(3.0V) (1.8V),26(3.0V) (1.8V),30.5 (3.0V) 30.5 32dBm
Package Code
UPG2179TB UPG2214TB UPG2214TK UPG2406TK
UPG2406T6R
UPG2408TK MediumPower UPG2418TB Internally terminated
SPDT Single Control Switches
TYPICAL ELECTRICAL CHARACTERISTICS 25°C) Frequency range: Part Number UPD5713TK UPG2010TB UPG2012TB PG2012TK UPG2015TB UPG2156TB UPG2160T5K Features LowCostCMOS High Power Power Miniature,LowPower Medium Power High Power Miniature,LowPower Control Voltages +2.8/0 +2.8/0 +2.8/0 +2.8/0 +2.8/0 +2.6/0 +2.6/0 Insertion Loss 2GHz (dB) 0.80 0.30 0.30 0.30 0.30 0.45 0.35 Isolation Input Power 2GHz (dB) compression point 17.5 17dBm 20.5 20.5dBm 21dBm Input Power compression point 21dBm 24dBm Package Code
Single Multi-Throw Switches
TYPICAL ELECTRICAL CHARACTERISTICS 25°C) Part Number Control Voltages +2.85/0 +3.0/0 +3.0/0 +2.6 +2.8/0 +2.8/0 +3.0/0 Insertion Loss (dB) 0.50@2.5GHz 1.0@3.8GHz 0.4@0.9GHz 0.55 2GHz 0.35 2GHz 0.55 2GHz 0.60 @2.5GHz 1GHz 2.5GHz 1GHz 2.5GHz 2GHz 1.3@2GHz 1GHz Isolation (dB) 35@2.5GHz 24@3.8GHz 0.9GHz 2GHz 13.5 2GHz 2GHz @2.5 1GHz 2.5GHz 1GHz 2.5GHz 2GHz 26@2GHz 1GHz Input Power compression point +37.5dBm 0.9GHz +35dBm 2GHz +33dBm +31dBm +28dBm Input Power @1.0 compression point +25dBm1 +31dBm 40Tx 35Rx Package Code
Features
UPG2150T5L UPG2181T5R UPG2183T6C UPG2189TB UPG2404T6Q UPG2405T6Q UPG2413T6M
SP3T WLAN, B'Tooth DP4T WiMAX SP4T High Power SPST High Power SP3T High Power SP3T WiFi, B'Tooth SP3T Power
UPG2413T6Z
SP3T Power
+3.0/0 +1.3 +2.8/0 +2.8/0
+28dBm +34dBm +17dBm +15dBm
+31dBm +20dBm +20dBm
UPG2416T7B SP4T blocking caps
UPD5731T6M SP4T CMOS Power UPD5738T6N
DPDT Wide Band CMOS
Notes: Port Ports Under development, please inquire
GaAS RFIC Switches Broadband MobileComm
Broadband Switches
TYPICAL ELECTRICAL CHARACTERISTICS 25°C) Part Number UPG2157T5F UPG2162T5N UPG2163T5N UPG2164T5N UPG2176T5N UPG2185T6R UPG2409TB UPG2409T6X UPG2411T6X
Description SPDT, WiMAX DPDT 6.0GHz SPDT 6.0GHz High Performance DPDT 6.0GHz WiMAX SPDT 6.0GHz High Performance SPDT High Power WiMAX, WLAN SPDT High Power WiMAX, WLAN
SPDT Dual Band WLAN 802.11a/b/g, MIMO SPDT Dual Band WLAN 802.11a/b/g, MIMO SPDT Dual Band WLAN 802.11a/b/g, MIMO SPDT Dual Band WLAN 802.11a/b/g, MIMO
Control Voltages +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0 +3.0/0
Insertion Loss (dB) 3.5GHz 2.4GHz 5.5GHz 2.5GHz 6GHz 2.4GHz 5.5GHz 0.55 3.5GHz 2.5GHz 6GHz 0.45 2.5GHz 0.60 3.8GHz 0.45 2.5GHz 0.65@6GHz 0.4@ 2.5GHz 6GHz 2.5GHz 6GHz 0.45 2.5GHz 0.65 6GHz 0.45 2.5GHz 0.55 6GHz
Isolation (dB) 3.5GHz 2.5GHz 6GHz 2.4GHz 5.5GHz 3.5GHz 2.5GHz 6GHz 3.8GHz 6GHz 6GHz
Input Power comp. point 29dBm +33.5dBm +34dBm +31dBm +31dBm
Input Power @1.0 comp. point >37dBm 31dBm 29dBm +35@2.5GHz +29@6GHz 31dBm 29dBm +37dBm +30.5dBm +35dBm +30.5dBm +30.5dBm
Package
UPG2411T7C UPG2415TK UPG2415T6X
Notes: Under development, please inquire
MobileComm Antenna Switches
Part Number Description Ports Control Typical Perfomance 25°C, ohms 0.4dB Loss 0.6dB Loss -80dBc LB/HB +108 IIP2 WCDMA-ANT 0.4dB Loss Line 0.6dB Loss -75dBc LB/HB /-72dBc LB/HB 20-pin TSQFN 20-pin TQFN Package Code Package Style
WCDMA UPG2193T6E SP8T WCDMA UPG2410T6L SP9T
GaAs Devices: FETs, RFIC LNAs Power Amplifiers
Noise GaAs FETs,
Part Number
NE3210S01 NE350184C NE3503M04 NE3508M04 NE3509M04 NE3509M14 NE3510M04 NE3511S02 NE3512S02 NE3513M04 NE3514S02 NE3515S02 NE3517S03 NE4210S01
TypicalSpecifications@TA 25°C NF/GA Bias NFOPT (mA) (dB) 0.35 0.55 0.40 0.45 0.35 0.30 0.35 0.45 0.75 0.50 (dB) 13.5 13.5 11.5 14.0 17.5 17.5 19.0 13.5 13.5 13.0 10.0 12.5 13.5 13.0 Power Bias (mA) P1dB (dBm) +18.0 +14.0 +14.0 +12.0 +14.0 +12.0 Chip Package Code Chip Package Description Plastic Micro-X Ceramic Plastic Plastic Plastic Plastic Plastic Micro-X Plastic Micro-X Plastic Plastic Micro-X Plastic Micro-X Plastic Micro-X Plastic Plastic Available Screening Grades
Gate Gate Length Width (µm) (µm)
Recommended
Frequency Range (GHz)
Test
Frequency
(GHz)
Notes: Under development, please inquire
GaAs RFIC Noise Amplifiers
TYPICAL ELECTRICAL CHARACTERISTICS 25°C) Part Number PG2310TK Frequency Range (MHz) 2300to2500 Test Conditions VCC=3.0V Power Gain (dBm) Noise Figure (dB) Package Application
(mA)
P1dB (dBm)
SDARS,ISM
GaAs RFIC Power Amplifiers Handset Wireless Applications
ELECTRICAL CHARACTERISTICS 25°C) Part Number Frequency Range (MHz) Test Conditions Output Power (dBm) Power Added Efficiency Package Style Description Application
PG2118K
450to2500 2500
PIN=0dBm VD=3.2V 2450 VDD=1.8V 2450 VDD=3.0V 2450 -5dBm VDD=3.0V 2450 PIN=+4dBm VCC=3.3V 2450 VCC=3V
+31.5TYP
50TYP
stage E-Mode PowerAmplifierIC
AMR,
UPG2250T5N
2500 2400 2500 2500 2500
1.8to3.5V PowerAmplifierIC
Bluetooth, ZigBee,
UPG2251T6M UPG2301T5L UPG2314T5N
+23TYP
50TYP
3.0VPowerAmplifierIC with internal matching
Bluetooth, ZigBee,
2stageHBTPowerAmplifier current HBT, miniature package
Bluetooth,ZigBee,ISM Bluetooth, ZigBee,
GaAs Devices: Integrated Front
Front Handset Wireless Applications
ELECTRICAL CHARACTERISTICS 25°C) Part Number Frequency Range (MHz) Test Conditions Output Power (dBm) Power Added Efficiency 28TYP Package Style Description Application
UPG2253T6S UPG2254T6W
2400 2500 2400 2500
2450 PIN=0dBm VDD=3.0V 2450 VDD=3.0V
+19TYP
GaAs RFIC: PA,2SPDTs,filter, Tx/Rxbypasspath +20dBm GaAs RFIC: cost version UPG2253, miniaturepackage
Bluetooth,ZigBee,ISM Bluetooth, ZigBee,
Notes: Under development, please inquire
GaAs CATV Hybrid Amplifiers
Push-Pull CATV Hybrid Amplifiers
Part Number MC-7831 MC-7831-HA MC-7832 MC-7832-HA MC-7833 MC-7834-KC MC-7836
Notes:
(VDD=24V,ZS Gain (dB, max) 18.0 19.0 18.0 19.0 22.0 23.0 22.0 23.0 25.0 26.0 20.0 21.0 27.0 28.0 CTB1 (dBc, max) CSO1 (dBc, max) X-MOD1,2 (dBc, max) (dB, max) (mA, max)
Frequency (MHz, max) 1000 1000
Distortion measurements VOUT flat, channels.
Measured using EIAJ methods procedures.
Noise Figure measured MHz. Higher current device better X-mod crash point performance.
Power Doubler CATV Hybrid Amplifiers (VDD=24V,ZS
Part Number MC-7845 MC-7846 MC-7847
(dBc,max) X-MOD1 X-MOD1 (dBc, typ) (dBc, max) (dBc, typ) (dBc, max) (mA, max)
Freqency (MHz, max) 1000 1000 1000 1000
Gain (dB, max) 18.0 19.0 22.0 23.0 25.0 26.0 25.0 26.0 18.0 19.0 20.0 21.0 22.0 23.0 25.0 26.0 18.0 19.5 22.5 24.0 24.5 25.5 27.0 28.0
(dBc, typ)
MC-7847-KC MC-7881 MC-7882 MC-7883
MC-7884 MC-78915 MC-7893 MC-7894
MC-7896
Notes:
Measured using EIAJ methods procedures. Distortion measurements made with channels loading, VOUT dBmV 745.25 MHz, tilted across band. Higher current device better X-mod crash point performance. Distortion measurements made with channels loading, VOUT dBmV 745.25 MHz, tilted across band. Distortion measurements made with channels loading, VOUT dBmV 547.25 MHz, tilted across band.
Silicon LD-MOSFET Power Devices
Silicon LD-MOSFETs Typical Specifications 25°C
Part Number NE552R479A NE5511279A NE5520279A NE5520379A NE5531079A NE55410GR NE5500234 POUT (dBm) 26.0 40.0 32.0 35.5 33.0 40.0 40.4 32.5 Linear Gain (dB) 15.0 20.5 Test Conditions Freq (GHz) 2.45 0.46 (dBm) IDSQ (mA) Package Description Pkg: Compact Pkg: Compact Pkg: Compact Pkg: Compact Pkg: Compact Pkg: plastic HTSSOP Pkg: Compact
Small Signal Silicon Bipolar Transistors
Silicon Transistors
Part Number NE661M04 NE662M04 NE662M16 NE66219 NE68018 NE68019 NE68030 NE68033 NE68039 NE68118 NE68119 NE68130 NE68133 NE68139 NE68518 NE68519 NE68539 NE68618 NE68619 NE68718 NE68719 NE851M13 NE85618 NE85619 NE85630 NE85633 NE85639 NE894M13 NE97733 NE97833 TEST (GHz) NF/GA (mA) 5/20 (dB) (dB) 12.0 10.0 11.0 13.0 12.0 13.5 13.0 13.5 11.0 10.0 12.0 13.5 10.0 MAG/MSG (mA) (dB) 12.5 12.0 16.0 15.5 13.0 11.0 15.0 12.0 11.0 11.5 12.5 14.0 13.5 12.0 11.5 13.0 13.0 12.0 10.0 (GHz) (mA) Package Name, Description
Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Super Mini Mold Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Super Mini Mold, SOT-323 style Pkg: Mini Mold, SOT-23 style Pkg: Mini Mold Pkg: Super Mini Mold Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Super Mini Mold, SOT-323 style Pkg: Mini Mold, SOT-23 style Pkg: Mini Mold, SOT-143 style Pkg: Super Mini Mold Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Mini Mold, SOT-143 style Pkg: Super Mini Mold Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Super Mini Mold Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Super Mini Mold Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Super Mini Mold, SOT-323 style Pkg: Mini Mold, SOT-23 style Pkg: Mini Mold, SOT-143 style Pkg: Mini Mold, SOT-23 style (PNP) Pkg: Mini Mold, SOT-23 style (PNP)
Small Signal Medium Power Transistors, Cordless Phone Devices
SiGe Transistors
Part Number NESG2021M05 NESG2021M05 ESG2021M16 NESG2030M04 NESG2031M05 NESG2031M05 NESG2031M16 NESG204619 NESG2101M16 NESG210719 NESG3031M05 NESG3031M05 NESG3031M14 NESG3031M14 NESG3032M14 NESG3033M14 NESG4030M14 TEST (GHz) NF/GA (mA) (dB) 0.95 0.95 (dB) 18.0 10.0 17.0 10.0 11.0 13.0 10.0 10.0 17.5 17.5 11.5 MAG/MSG (mA) (dB) 22.5 22.5 21.5 21.5 17.0 14.0 15.0 20.5 20.5 (GHz) (mA) Package Name, Description
Pkg: Ultra-Super Mini Mold, SC-90 style Pkg: Ultra-Super Mini Mold, SC-90 style
Medium Power Silicon Transistors
Part Number NE46134 NE461M02 NE663M04 NE664M04 NE677M04 NE678M04 NE85634 NE856M02
NESG2101M05
TEST (GHz) 0.46 0.46
P1dB 12.5 12.5 (mA) (dBm) 27.5 27.5 33.5 31.5
(mA) (dB) 13.5
(GHz) 17.0
(mA)
Package Description
Pkg: SOT-89 style Pkg: high gain SOT-89 style Pkg: SOT-89 style Pkg: high gain SOT-89 style Pkg: SOT-89 style Pkg: SOT-89 style Pkg: SOT-89 style Pkg: SOT-89 style Pkg: SOT-89 style Pkg: SOT-89 style Pkg: Mini Mold
NESG2501341 NESG2501341 NESG2602341 NESG260234
NESG2700341 NESG270034 UPA901TU Note: SiGe part
Silicon Transistors Cordless Phones
Part Number NE68939 NE69039 Frequency Range 500-2000 500-2000 P1dB (dBm) 24.5 27.5 Linear Gain (dB) Collector Efficiency Frequency (MHz) 1900 1900 Package Description Pkg: Mini Mold, SOT-143 style Pkg: Mini Mold, SOT-143 style
Silicon Transistors: Twin Packages, Chips, Oscillator Switching Devices
Twin Transistors
Part Number |S21E TEST NF/GA NF/GA (GHz) (mA) (dB) (dB) (dB) (mA) (dB) (GHz) (mA) Pkg. Code Package Style
Twin Transistors single package Matched UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA810T UPA811T UPA812T UPA828TD UPA895TD 12.0 12.0 12.0 12.0 13.0 11.0 11.0 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Miniature Recessed Leads Miniature Recessed Leads NE680 NE856 NE681 NE685 NE686 NE687 NE856 NE680 NE681 NE687 NE851
10.0 14.0 14.0 16.0 11.0
10.0 13.5 11.0
10.0 14.0 12.0
14.0 16.0 10.0 10.0
Twin Transistors single package Mixed UPA861TD (Q1) (Q2) (Q1) (Q2) (Q1) (Q2) Miniature Recessed Leads Miniature Recessed Leads Miniature Recessed Leads NE687 NE894 NE685 NE851 NE687 NE851
12.5 13.5 12.5
UPA862TD
UPA863TD
Silicon Transistor Chips
Part Number NE46100 NE66100 NE66200 NE66300 NE68000 NE68100 NE85600 NESG303100G TEST NF/GA NF/GA (GHz) (mA)
(dB)
(dB) 16.5 16.0 17.5 12.0 10.0
(dB) 22.0 19.0 14.0 12.5
|S21E|2 (mA) (dB) 14.0
(GHz) 10.0
(mA)
Pkg. Code
NE461 NE661 NE662 NE663 NE680 NE681 NE856 NESG3031
/1.1 16.0
Silicon Oscillator Transistors
Part Number NE58219 POSC (GHz) (mA) 0.001 (GHz) (mA) Pkg. Code Package Description Pkg: Ultra-Super Mini Mold, SC-90 style
Silicon Switching Transistors
Part Number NE68100 NE68118 NE68119 NE68133 Typical Switching Times |S21e|2 (ON) (OFF) (pF) (GHz) (mA) (ns) (ns) (ns) (ns) (GHz) (mA) (dB) 11.0 15.0 12.0 13.0 Pkg. (mA) Code Package Description Chip Pkg: Super Mini Mold Pkg: SC-90 style Pkg: SOT-23 style
Silicon RFICs: Power Wideband Amplifiers
Power Amplifiers
Typical Frequency Range down (MHz) 2700 1500 1800 1500 2900 1000 Note Note Note Note7 ELECTRICAL CHARACTERISTICS1 25°C) (mA) (dB) 13.0 13.0 13.0 Gain (dB) 15.3 12.5 11.5 15.5 15.5 18.5 17.5 14.5 13.5 17.5 17.5 RLIN (dB) 11.5 RLOUT (dB) P1dB (dBm) -3.0 -3.7 -10.9 -8.5 -12.5 -5.5 +2.5 ISOL (dB) Package Code Package Style SOT-363 SOT-363 SOT-363 SOT-363 SOT-363
Recessed Lead
Part Number UPC2745TB UPC2746TB UPC2747TB UPC2748TB UPC2749TB UPC3237TK UPC8151TB UPC8178TB UPC8179TB UPC8179TK
SOT-363 SOT-363 SOT-363
Recessed Lead
Notes: Electrical Characteristics test condition test condition 1900 test condition 1000 test condition 100-1900MHz with output port matching 2400 with output port matching
Wideband Amplifiers
Typical Frequency Range down (MHz) 2900 2300 1000 2900 2600 2900 2700 2100 2700 2900 3200 3200 2800 3200 3200 3200 3000 3000 3000 3000 3000 4000 2900 20.0 12.5 ELECTRICAL CHARACTERISTICS1 25°C) (mA) 24.5 15.5 19.8 12.0 31.0 19.5 (dB) 11.5 18.5 20.5 20.5 20.5 17.5 Gain (dB) 15.5 20.5 21.5 32.5 22.5 32.8 23.5 20.5 18.5 26.5 36.5 16.5 23.5 17.5 22.5 24.5 35.5 26.5 23.5 RLIN (dB) 10.5 10.5 RLOUT (dB) 10.5 13.5 P1dB (dBm) +9.2 +8.7 +10.8 -2.6 -0.4 +6.5 +11.5 +1.5 +6.5 -3.5 +9.0 +7.5 -6.5 +7.5 +10.5 +9.0 ISOL (dB) Package Code Package Style SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363
6-pin Recessed Lead
Part Number UPC2708TB UPC2709TB UPC2710TB UPC2711TB UPC2712TB UPC2762TB UPC2763TB UPC2771TB UPC2776TB
UPC3215TB UPC3223TB UPC3224TB UPC3225TB UPC3226TB UPC3227TB UPC3232TB
14.5
UPC3236TK UPC3239TB UPC3240TB UPC3241TB UPC3242TB UPC8181TB UPC8182TB
Notes:
SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363
Electrical Characteristics test condition 1000 test condition test condition Under development, please inquire
1900 test condition
Silicon RFICs: Noise, Variable Gain Amplifiers
SiGe SiGe:C Noise Amplifiers
ELECTRICAL CHARACTERISTICS1 25°C) Typical Frequency (GHz) 1.575 1.575
(mA) 10.0 13.0 10.0
(dB) 0.85 0.80 0.95 0.95 15.5 24.0 24.5 14.0
Gain (dB) 18.5 27.0 18.5 20.0 17.0 20.0 19.5 18.5 21.5 30.0
RLIN (dB) -7.5 -7.0
RLOUT (dB) 14.5 -14.0
P1dB (dBm) -22.5
Input
ISOL (dB) Package Code Package Style
Recessed Lead Recessed Lead Recessed Lead Recessed Lead Leadless Recessed Lead Leadless Leadless Leadless
Part Number UPC8211TK1 UPC8215TU1 UPC8230TU
UPC8231TK UPC8232T5N UPC8233TK UPC8236T6N UPC8240T6N UPC8244T6N
1.575 1.575 1.575 1.575 1.575 1.575
Notes: SiGe device 3.0GHz SiGe:C device Under development, please inquire
SiGe BiCMOS Wideband with Bypass
ELECTRICAL CHARACTERISTICS 25°C) Typical Frequency Range Down (MHz)
Input Input
Part Number
(mA)
(dB) 11.5 -2.0
Gain (dB) 13.5 -1.3 13.0 -1.5 15.5
RLIN (dB) 17.0
RLOUT (dB) 17.0
P1dB (dB) -5.0
(dB)
Mode Bypass Bypass
Package Code
Package Style
UPD5740T6N UPD5750
Ball Grid
SSOP WL-BGA
Notes: Under development, please inquire
Amplifiers with Video Output
ELECTRICAL CHARACTERISTICS 25°C) Typical Frequency Range Down (MHz)
Part Number UPC3217GV UPC3218GV UPC3219GV UPC3221GV UPC3231GV UPC3234GV
(mA)
(dB)
Gain (dB)
RLIN (dB)
RLOUT (dB)
VOUT (p-p)
(dB) 58.5
Package Code S08/GV S08/GV S08/GV S08/GV S08/GV S08/GV
Package Style 8pinSSOP 8pinSSOP 8pinSSOP 8pinSSOP 8pinSSOP 8pinSSOP
28.5
Notes: MHz, 50W, 250W
Output Voltage swing into 250W, VOUT Vp-p Digital output path indicated. Gain (max) separte analog path 28dB
Variable Gain Amplifiers
ELECTRICAL CHARACTERISTICS 25°C) Typical Frequency Range Down (MHz) 800-2500 (mA) 11.5 (dB) Gain (dB) RLIN (dB) RLOUT (dB) VOUT (dB) recessed lead
Part Number
Package Code
Package Style
UPC8204TK
Notes: MHz, out, -20dBm input power
Maximum Gain
Silicon RFIC Differential Amps, Up/Down Converters, Tuners Prescalers
Differential Amplfier
ELECTRICAL CHARACTERISTICS 25°C) Video (mA) (MHz) Gain Gain Gain Gain
Vop-p (Vp-p) (mA) Gain (dB) (dB) (dB) S08/GV 8pinSSOP
Part Number UPC1663GV
Package Code
Package Style
Notes: Differential Voltage Gain
Frequency Upconverters
Input Frequency Range Down (MHz) UPC8106TB
Operation conditions applicable Gain Gain select pins shorted Gain Gain select pins open
refers Gain down from test condition
ELECTRICAL CHARACTERISTICS 25°C) Output Frequency Range (MHz) 400-2000 800-2500 800-2500 Conversion Gain (dB) 10.0 Noise Figure (dB) 10.4 +5.5 +6.0 +10.0 SOT-363 SOT-363 SOT-363
Part Number
(mA)
PSAT (dBm) -2.0 +2.5
OIP3
Package Code
Package Style
50-400 50-400 50-400
UPC8172TB UPC8187TB
Notes: MHz, MHz, 1900 MHz, 1780 MHz,
1900 MHz, 1660 MHz, PLOIN
Frequency Downconverters
ELECTRICAL CHARACTERISTICS 25°C) Input Frequency Range Down (MHz) UPC2756TB UPC2757TB UPC2758TB UPC8112TB 100-2000 100-2000 100-2000 800-2000 Output Frequency Range Down (MHz) 10-300 20-300 20-300 100-300 Conversion Gain PSAT (dB) (dBm) Noise Figure (dB) 11.2 SOT-363 SOT-363 SOT-363 SOT-363 Test Condition (Note)
Part Number
(mA)
Package Code
Package Style
Note: Mixer Block only
Out-of-Band Tuners: Downconverter with Video Amplifiers CATV/Settop
ELECTRICAL CHARACTERISTICS 25°C) Input Frequency Range (MHz) Conversion Gain (dB) Gain Control Range (dB) Noise Figure (dB) SSOP
Part Number UPC3220GR UPC3228T5S UPC3243T7A
(mA)
(dBc) Code
Package Style
Package
Prescalers (Frequency Dividers)
ELECTRICAL CHARACTERISTICS 25°C) Part Number UPB1507GV UPB1508GV UPB1509GV UPB1510GV UPB1513TU (GHz) (dBm) POUT1 (dBm) Note1 Note2 -4.0 2.2to5.5 12.5 12(TYP) 15(TYP) (TYP) (mA) 26.5 64/128/256 2/4/8 S08/GV S08/GV S08/GV S08/GV 8pinSSOP 8pinSSOP 8pinSSOP 8pinSSOP
Divide Ratio
Package Code
Package Style
0.05
5.3(TYP)
Notes: Output voltage swing with VOUT Vp-p minimum
Output voltage swing with VOUT Vp-p minimum
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