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Manual 14th edition
Application design manual High Performance products 2010
High Performance most demanding applications
NXP's Manual makes design work much easier
NXP's Manual most important reference tools market today's designers features complete range products, from high power signal conditioning high speed data converters.
What's new? This Manual features applications, such point-to-point communication, radar, VSAT, MoCA (Multimedia over Coax Alliance), (Network Interface Module reception), Digital Satellite Set-top-box (Plasma) lighting, medical imaging, microwave furnaces Mobile platforms. describe thoroughly developments main technologies SiGe:C QUBiC LDMOS. products families have been added broad portfolio, like: Quad diodes, generation SiGe:C wideband transistors, variable gain amplifiers, LNA's wireless infrastructures, LNA's MOSFETs full line-up high speed converters. course latest additions improvements included: LNA's, medium power amplifiers, generators CATV modules. base station offering grown extensively e.g. comprehensive best class Doherty amplifier designs, broad selection medium power, variable gain noise amplifiers JESD204A-compliant, high speed DACs ADCs. Last least, expanded cross reference list with over 1.200 items. strong foundation Shipping billions products annually, true industry leader high performance small signal products widely installed satellites, cellular base stations, mobile devices, cars, tuners CATV. We're leader high power cellular infrastructure, broadcast/ISM Radar applications. With new, serialized signal processing architectures with JESD204A-compliant high-speed converters, enabling transition more compact, higher performance systems. extends beyond packaged products patented high performance processes. From high-power LDMOS power amplifiers, CMOS processes high-speed converters, most advanced SiGe:C (QUBiC4) small signal transistors, MMICs ICs. in-house process technology portfolio sets apart. What's more, producing over million units day, control front- back-end manufacturing quality cost structures with internal 8-inch fabs Netherlands Singapore assembly plants Thailand, Taiwan China. processses AEC100 certified supply into most quality-conscious customers applications.
Semiconductors Manual 14th edition
NXP's firsts 1963 First transistors diodes 0.75 inch wafers 1964 First wideband transistor with 1970 BFR90, wideband transistor 1978 BFQ33, wideband transistor 1989 Output matching common emitter base station transistors 1992 Highest power broadcast bipolar devices 1996 Highest performance LDMOS 2004 Gen5 LDMOS which becomes industry's most advanced process power amplifiers 2006 Fully integrated Doherty transistors 2007 Industry's first fully integrated, silicon-based solution satellite: TFF1004HN 2008 High speed data converters based JESD204A standard 2009 single transistor (BLF578) power amplifier radio MHz) 2009 State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
"I'm proud present latest edition Manual. covers NXP's entire range products comprehensive manual, convinced that you'll find 14th edition even more useful your daily design work."
Kind regards,
John Croteau
Vice President General Manager Business Line High Performance
Manual page www.nxp.com/rfmanual
Semiconductors Manual 14th edition
Contents
Mobile Communication Infrastructure 1.1.1 Base stations (all cellular standards frequencies) 1.1.2 Point-to-point Microwave mmWave 1.2.1 VSAT 1.2.2 Microwave products Avionics, S-band Radar applications Fixed Communication Infrastructure 1.3.1 CATV optical (optical node with multiple out-ports) 1.3.2 CATV electrical (line extenders) 1.3.3 Broadcast (industrial, scientific medical) (STB) Satellite_ 1.4.1 Network interface module (NIM) reception 1.4.2 Basic tuner 1.4.3 MoCA (Multimedia over Coax Alliance) 1.4.4 Satellite outdoor unit, noise block (LNB) multiple users 1.4.5 Satellite Multi Switch DiSEqC SMATV 1.4.6 Digital Satellite (high definition) Consumer Mobile 1.5.1 Mobile Platforms (GPS mobile radio Reference clock CMMB LTE) 1.5.2 front-end WLAN (802.11n Dual Concurrent) 1.5.3 2-way radio family radio system 1.5.4 DECT front-end DECT in-house base station Automotive Industrial 1.6.1 Active antenna 1.6.2 Remote keyless entry, generic front-end with dedicated antenna reception transmission 1.6.3 Tire pressure monitoring system_ 1.6.4 radio receiver (CREST ICs: TEF6860HL, TEF6862HL) 1.6.5 E-metering, generic front-end with single antenna ZigBee 1.6.6 Plasma Lighting_ 1.6.7 Medical Imaging_ 1.6.8 Microwave furnace application Technologies focus products fastest TTFF with LNAs that proven QUBiC4X SiGe:C Always right match with latest generation SiGe:C wideband transistors Medium-Power MMICs BGA7xxx broadband applications Low-noise generators microwave mmWave radios Complete satellite portfolio architectures VSAT, 2-way communication satellite CATV C-family Chinese SARFT standard 2.7.1 GaAs CATV solutions CGY888C, CGD942C CGD944C Highly efficient line-up GaAs modules sustainable CATV networks Doherty amplifier technology state-of-art wireless infrastructure 2.10 Boost efficiency lower system cost wireless infrastructure with 2.11 Looking leader SiGe:C? You've just found 2.12 Microwave Radar 2.13 Digital broadcasting best
Semiconductors Manual 14th edition
Product portfolio products diodes 3.2.1 Varicap diodes 3.2.2 diodes 3.2.3 Band-switch diodes 3.2.4 Schottky diodes Bipolar transistors 3.3.1 Wideband transistors 3.4.1 MMICs 3.4.2 noise generators VSAT general microwave applications transistors 3.5.1 JFETs 3.5.2 MOSFETs Modules 3.6.1 CATV Reverse Hybrids 3.6.2 CATV Push-Pulls 3.6.3 CATV power doublers 3.6.4 CATV optical receivers
power transistors 3.7.1 Base Station transistors 3.7.2 Broadcast (industrial, scientific, medical) power transistors 3.7.3 Microwave LDMOS power transistors High Speed Data Converters 3.8.1 High Speed ADCs 3.8.2 High Speed DACs Design support S-Parameters Simulation models 4.2.1 Spice models 4.2.2 Power device simulation models Application notes Demo boards 4.4.1 MMIC SiGe:C transistor demo boards 4.4.2 power transistor demo boards 4.4.3 High Speed Converter demo boards Samples products development Samples released products Datasheets Design-in support NEW: interactive selection guides Cross-references replacements Cross-references: Manufacturer types versus types Cross-references: discontinued types versus replacement types Packing packaging information Packing quantities package with relevant ordering code Marking codes list Abbreviations Contacts links Product index
Semiconductors Manual 14th edition
Semiconductors Manual 14th edition
Mobile Communication Infrastructure
1.1.1 Base stations (all cellular standards frequencies)
also brochure: 'Your partner Mobile Communication Infrastructure design': document number: 9397 16837. Application diagram
MIXER MIXER
I-DAC SIGNAL PROCESSING
POWER BOARD
ISOLATOR
Q-DAC
MIXER mixer
ANTENNA TX/RX
INTERFACING
TOWER MOUNTED AMPLIFIER
MIXER MIXER DUPLEXER
I-ADC
Q-ADC
MIXER
Processing small signal
Dataconverters power
brb411
Above diagram shows simplified base station block diagram with main branches: transmit (upper half, receive (lower half, RX). Walking along transmit branch, after interfacing into signal processing part, first encounters digital analog converters (DAC), which include serial interface case (SER). transmit signal then passes low-pass filter block (LPF) being upconverted mixer stage. Next follows variable gain amplifier (VGA), bandpass filter BPF) power amplifier board with medium power amplifier- (MPA) high power amplifier (HPA)stages. isolater duplexer last basic blocks antenna. feedback line provided monitor transmitted signal. signal "sampled", down-converted mixer, amplified (VGA), bandpassfiltered (BPF) converted digital analog digital converter (SER ADC), with high speed serial interface. main branch base station starts duplexer, amplified noise amplifier (LNA) band pass filtered BPF) very close antenna "tower mounted amplifier". further amplifier (LNA) then feeds into down conversion mixer; base band signals further amplified (VGA) pass filter (LPF) into respective ADC's (SER I-ADC Q-DAC). serial interface turn connects base band signal processing unit. synchronizing "heartbeats" diagram controlled phase locked loops (PLL) with without voltage controlled oscillator (VCO). Microcontrollers provide local control monitoring functions within building blocks. colored building blocks sourced discussed following paragraphs. Semiconductors Manual 14th edition
Recommended products
Function function driver MMIC driver final final final final final MMIC driver integrated Doherty driver final final final driver final driver final Freq band (MHz) 728-768 869-894 925-960 1805-1880 1930-1990 2110-2170 2300-2400 2500-2700 3400-3600 PPEAK (dBm) 58.9 58.2 49.5 52.5 frange 2200 1000 1000 1000 1800 2000 1805 1880 1805 1880 1805 1880 2100 2200 2010 2025 2110 2170 2000 2200 2110 2170 2300 2400 2500 2700 3400 3600 Type BLF6G21-10G BLM6G10-30 BLF6G10-160RN BLF6G10-200RN BLF6G20-230PRN BLF7G20L(S)-200 BLF7G20L(S)-250P BLF7G20L(S)-300P BLM6G22-30 BLD6G21L-50 BLD6G22L-50 BLF7G22L-130 BLF6G22-180PN BLF6G22-180RN BLF7G22L(S)-200 BLF7G24L(S)-100(G) BLF6G27-10 BLF6G27-135 BLF7G27L-200P BLF6G38-10 BLF6G38-100 Gain (dB) 15.5 14.5 11.5 Drain Eff. PL(AV) 18.5
11.5 28.5 27.5 22.5 21.5
18.5 22.5 17.5 29.5 13.5 13.3 18.5 17.5 16.5
Mode operation WCDMA. TD-SCDMA. GSM. EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA TD-SCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WiMAX WiMAX WiMAX WiMAX WiMAX
(high power amplifier single transistors)
Function
POUT-AVG (dBm) 44.5
Type MMPP MPPM
Main transistor BLF6G10LS-200RN BLF6G10-200RN BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN BLF7G27-75P BLF6G27-150P BLF6G38-50
Peak transistor BLF6G10LS-200RN BLF6G10-200RN BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN BLF7G27-75P BLF7G27-150P BLF6G38-50
(high power amplifier Doherty designs)
Product highlight: high power transistor BLF7G20L(S)-300P
NXP's LDMOS Gen6 Gen7 enable world's most efficient base station designs combining very high intrinsic technology) extrinsic (amplifier design) efficiencies. Gen7 specifically designed Doherty amplifiers.
Features
unrivalled ruggedness very consistent device performance highest Doherty amplifier efficiencies date peak power; average power push pull package thermal resistance design very reliable operation
Semiconductors Manual 14th edition
Function Discrete attenuator
Product diode diode
Package SOT753 SOT753 Various^ Package
Type BAP64Q BAP70Q BAP64 Type BFU725F/N1 BGU7051 BGU7052 BGU7053 BGU7054 Type BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* Type BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133*
Function
Product transistor SiGe:C transistor
SOT343F
(low noise amplifier) Mixer
MMIC
SiGe:C MMIC
SOT650
Function (variable gain amplifier)
Product
Package
MMIC
SiGe:C MMIC
SOT617
Function
Product MMIC
(medium power amplifier)
MMIC
SiGe:C MMIC
Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 SOT908
check status products, this type been released mass production. SOD523, SOD323, SOT23 SOT323
Function
function
Max. sampling frequency Msps Msps Msps Msps Msps
Type DAC1405D650 DAC1405D160 DAC1401D125 DAC1408D750 ADC1207S080 ADC1415S125 ADC1410S125 ADC1412D125 ADC1413D125
bits
Interface LVCMOS LVCMOS LVCMOS JESD204A LVCMOS LVCMOS&LVDS LVCMOS&LVDS LVCMOS&LVDS JES204A
dual channel
Dataconverters single channel
Msps Msps Msps Msps
dual channel
Product highlight: medium power amplifier BGA7124 MMIC
BGA7124 MMIC one-stage driver amplifier, offered low-cost ultra small SOT908 leadless package. delivers output power gain compression superior performance various narrowband-tuned application circuits frequencies 2700 MHz.
Features
2700 frequency operating range small signal gain output power gain compression Integrated active biasing single supply operation Simple quiescent current adjustment shutdown mode
Semiconductors Manual 14th edition
1.1.2 Point-to-point
Application diagram
INDOOR UNIT POWER SUPPLY
OUTDOOR UNIT
VGA1 VGA1
DIGITAL SIGNAL PROCESSOR
to/from
SYNTH
ANTENNA
DATA INTERFACE
ANALOG
VGA2
LNA2 LNA1
VGA2 VGA1 brb406
Recommended products Indoor unit
Function (variable gain amplifier) Function Product MMIC SiGe:C MMIC Package SOT617 Type BGA7202* BGA7203* BGA7204* Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BGU7003 BGU7051* BGU7052* BGU7053* BGU7054* BFU725F/N1 BFG425W BFG424W BFG325/XR Type BGA7350* SOT617 BGA7351*
Product MMIC
Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908
(medium power amplifier)
MMIC SiGe:C MMIC
Function
Product gain block SiGe:C MMIC General purpose wideband amplifiers
Package
MMIC
SOT363
Function
Product SiGe:C MMIC SiGe:C transistor transistor Wideband transistor
Package SOT891 SOT650
MMIC
SOT343F SOT343R SOT143R Package
Function (variable gain amplifier)
Product MMIC SiGe:C MMIC
check status products, this type been released mass production.
Semiconductors Manual 14th edition
Outdoor unit
Function (variable gain amplifier) Product SiGe:C MMIC Package Type BGA7202* MMIC SOT617 BGA7203* BGA7204* Product MMIC (medium power amplifier) Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 Function Buffer Function MMIC Function Product Product transistor Product transistor SiGe:C transistor SiGe:C MMIC SiGe:C transistor Package SOT343F Package SOT343F SOT891 Package Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* Type BFU725F/N1 Type BFU725F/N1 BGU7003 Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 Function (variable gain amplifier) Product SiGe:C MMIC Package Type BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* Type TFF1003HN TFF1007HN* TFF11xxxHN*^ Type BFG424W BFG425W BFU725F/N1 Type BB202
MMIC
SOT617
Function
Function
Product SiGe:C
Package SOT616
MMIC SiGe:C MMIC
Function Oscillator
Product transistor Wideband transistor SiGe:C transistor
Package SOT343R SOT343F Package Varicap diode SOD523
Function Synth
Product diode
check status products, this type been released mass production. different types with ranges: 7-15 GHz, 3.4.2
gain block
SiGe:C MMIC SOT363 General purpose wideband amplifiers
MMIC
Product highlight: medium power amplifier BGA7124 MMIC
BGA7124 MMIC one-stage driver amplifier, offered lowcost ultra small SOT908 leadless package. delivers output power gain compression superior performance various narrowband-tuned application circuits frequencies 2700 MHz.
Features
2700 frequency operating range small signal gain output power gain compression Integrated active biasing single supply operation Simple quiescent current adjustment shutdown mode
Semiconductors Manual 14th edition
Microwave mmWave
1.2.1 VSAT
Application diagram
INDOOR UNIT POWER SUPPLY
OUTDOOR UNIT
DIGITAL SIGNAL PROCESSOR
to/from
SYNTH
ANTENNA
DATA INTERFACE
LNA2
LNA1 brb405
DEMOD
Recommended products VSAT Indoor unit
Function Product gain block MMIC General purpose wideband amplifiers SiGe:C MMIC SOT363 Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BFU725F/N1 BFG425W BFG424W BFG325/XR
Function
Product SiGe:C transistor transistor Wideband transistor
Package SOT343F SOT343R SOT143R
Semiconductors Manual 14th edition
Recommended products VSAT Outdoor unit
Function Product Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 Type BFU725F/N1 BGU7003 Type TFF1003HN TFF1007HN* TFF11xxxHN*^ Type BFG424W BFG425W BFU725F/N1 Type BB202 Type BFU725F/N1
gain block
SiGe:C MMIC SOT363 General purpose wideband amplifiers
MMIC
Function LNA2
Product transistor MMIC Product SiGe:C SiGe:C transistor SiGe:C MMIC
Package SOT343F SOT891 Package SOT616
Function
Function Oscillator
Product transistor Wideband transistor SiGe:C transistor
Package SOT343R SOT343F Package Varicap diode SOD523 Package SiGe:C transistor SOT343F
Function Synth Function Buffer
Product diode Product transistor
check status products, this type been released mass production. different types with ranges: 7-15 GHz, 3.4.2
Product highlight: TFF1003HN
TFF1003HN band frequency generator intended phase noise Local Oscillator (LO) circuits band VSAT transmitters transceivers. specified phase noise complies with IESS-308 from Intelsat.
Features
Phase noise compliant with IESS-308 (Intelsat) generator with range from 12.8 13.05 Input signal Divider settings
Semiconductors Manual 14th edition
1.2.2 Microwave products Avionics, S-band Radar applications
Application diagram
signals
video, timing, bias voltage, control data signals small signal power local oscillator
mixer
POWER BOARD
ISOLATOR
ANTENNA DRIVE
duplexer
DISPLAY CONTROL
WAVEFORM GENERATOR control timing video DETECTOR
local oscillator signal
mixer
amplifier
brb410
Recommended products
Application Avionics power transistors Function driver final final final driver final final final driver driver driver final final final final final final final final Name BLL6H0514-25 BLA6H0912-500 BLA6H1011-600 BLA6G1011-200R BLL6H0514-25 BLL6H1214-500 BLL6H1214L(S)-250 BLL6HL(S)0514-130 BLS6G2731-6G BLS6G3135-20 BLS6G3135S-20 BLS6G2731-120 BLS6G2731S-120 BLS6G2933S-130 BLS6G3135-120 BLS6G3135S-120 BLS7G2933P-200 BLS7G2731P-200 BLS6G2731S-130 Package SOT467C SOT634A SOT539A SOT502A2 SOT467C SOT539A SOT502 SOT1135 SOT975C SOT608A SOT608B SOT502A SOT502B SOT922-1 SOT502A SOT502B pallet pallet SOT922 1400 1215 1030 1090 1030 1090 1400 1200 1400 1200 1400 1400 2700 3100 3100 3500 3100 3500 2700 3100 2700 3100 2900 3300 3100 3500 3100 3500 2900 3300 2700 3100 2700 3100 (min) (min) (min) 15.5 15.5 13.5 13.5 12.5 PULSED class PULSED class PULSED class PULSED class PULSED class PULSED class Pulsed Pulsed PULSED class PULSED class PULSED class PULSED class PULSED class PULSED class PULSED class PULSED class PULSED class PULSED class Pulsed
L-Band power transistors
S-band power transistors
Semiconductors Manual 14th edition
Function Discrete attenuator
Product diode diode
Package Various^
Type BAP64
SOD523, SOD323, SOT23 SOT323 Function (low noise amplifier) Mixer Function Product transistor SiGe:C transistor Package SOT343F Type BFU725F/N1
Product
Package
Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 Type TFF1003HN TFF1007HN* TFF11xxxHN*^ Type BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* Type BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* BGA6589
SiGe:C MMIC amplifier MMIC General purpose wideband amplifiers Function PLL/VCO generator Function (variable gain amplifier) Product SiGe:C Package SOT616 SOT363
Product
Package
MMIC
SiGe:C MMIC
SOT617
Function
Product
Package SOT908 SOT89 SOT908 SOT89 SOT908 SOT908 SOT89
(medium power amplifier)
MMIC
SiGe:C MMIC
MMIC
check status products, this type been released mass production. different types with ranges: 7-15 GHz, 3.4.2
Product highlight:
BLS6G2933P-200 first LDMOS based, industry standard pallet available market. This pallet offers more than efficiency includes complete bias network used direct replacement current solutions.
Features
Efficiency Industry standard footprint in/out matched entire bandwidth Lightweight heat sink included
Semiconductors Manual 14th edition
Fixed Communication Infrastructure
Note: looking MoCA Satellite Multi Switch Boxes? chapter Satellite.
1.3.1 CATV optical (optical node with multiple out-ports)
Application diagram
power amplifier
duplex filter coax port
forward receiver fiber
preamplifier
splitter
coax port
coax port
coax port
bra852
Recommended products
Function forward receiver Function pre-amplifier Function power amplifier Product Forward path receiver Product Push-Pulls Power doubler Product Power doublers Frequency Package SOT115 SOT115 SOT115 Gain (dB) 18.2 18.8 Gain (dB) 20.5 22.5 Type BGO807 BGO807CE BGO827 Type BGY885A BGY887 BGD812 Type CGD942C CGD944C
Frequency Frequency
Product highlight: BGO807CE
BGO807CE integrated optical receiver module that provides high output levels includes integrated temperature compensated circuitry. your optical node design, BGO807CE enables high performance/ price ratio ruggedness. When upgrading network from analog digital BGO807CE perfect fit.
Features
Excellent linearity noise Excellent flatness Standard CATV outline Rugged construction Gold metallization ensures excellent reliability High optical input power range
Semiconductors Manual 14th edition
1.3.2 CATV electrical (line extenders)
Application diagram
duplex filter coax
preamplifier
power amplifier
duplex filter coax
reverse amplifier
bra505
Recommended products
Function Product Frequency pre-amplifier Gain (dB) 33.5 35.5 33.5 35.5 26.2 27.8 33.5 35.2 33.5 34.5 33.5 34.5 34.5 36.5 Type BGY588N BGY588C BGY587B BGY687 BGE788C BGE788 BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A CGY1041* CGY1043* CGY1047 CGY1049* CGY1032* Function Product Frequency Gain (dB) 18-19 19.5 20.5 18.2 18.8 18.2 18.8 20.6 18.2 18.8 19.7 20.3 20.5 22.5 Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 CGD942C CGD944C CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD1046Hi*
Push-Pulls
power amplifier
Power doublers
1000
1000
Function reverse amplifier
Product Reverse hybrids
Frequency 5-75 5-120 5-200
Gain (dB) 29.2 30.8 24.5 25.5 23.5 24.5
Type BGY68 BGY66B BGY67A
available SOT115 package. check status products, this type been released mass production.
Product highlight: CGD1046Hi
CGD1046Hi* with very high-output power level primarily designed fiber deep-optical-node applications (N+1/2/3). This hybrid amplifier solution offers extended temperature range, high power overstress capabilities case surges high levels resulting cost ownership. It's designed durability offering superior ruggedness.
Features
High-output power High power gain power doublers Extremely noise Dark Green products GaAs HFET dies high-end applications Rugged construction Superior levels protection Integrated ringwave protection Design optimized digital channel loading Temperature compensated gain response Optimized heat management Excellent temperature resistance
Semiconductors Manual 14th edition
1.3.3 Broadcast (industrial, scientific medical)
Application diagram
typ. DVB-T Driver stages
exciter DVB-T
harmonic filter
typ. DVB-T output power power monitor
final
amplifiers
Recommended products
Function driver driver driver final final final final final final final final Type BLF871(S) BLF881(S) BLF571 BLF573(S) BLF574 BLF578 BLF645 BLF878 BLF888 BLF888A(S) BLF177 BLF278 frange 1000 1000 1000 1000 1000 1000 1000 1000 1000 1400 1400 PL(AV) 1200 1000 27.5 27.2 26.5 Mode operation 2-TONE DVB-T 2-TONE DVB-T PULSED 2-TONE DVB-T DVB-T 2-TONE DVB-T 2-TONE DVB-T class class
Product highlight:
NXP's high voltage LDMOS process enables highest power unequalled ruggedness. BLF888A: delivers highest power level digital broadcasting available date.
Features
Best broadband efficiency Highest power devices Unrivalled ruggedness Low-thermal resistance design very reliable operation Very consistent device performance
Semiconductors Manual 14th edition
(STB) Satellite
Note: looking Mobile? chapter 1.5.1 Handset.
1.4.1 Network interface module (NIM) reception
Application diagram
input
surge
CONVENTIONAL TUNER SILICON TUNER
output
brb403
Make high performance active splitter tuner with BGU703x. Nowadays more flexibility design more complicated signal handling required tuner. front-end signal receiver longer just tuned receiver, evolved into Network Interface Module (NIM) with tuned demodulators, active splitters re-modulators. active splitter requires with excellent linearity. have developed series LNA/ MMICs (BGU703x) designed specifically high linearity (IP3O dBm) noise applications like active splitter tuner.
Save energy with BF11x8 BF11x8 series small signal switching MOSFETs which used switching signals GHz. With BF11x8 series switch save considerable amount energy. When recording device (DVD-R, HDD-R, VCR, DVR) powered people remain watching although antenna looped recording device. Without using BF11x8 antenna signal lost. moment power recording device BF11x8 open, signal travels recording device tuner. moment power recording device completely off, BF11x8 closes. This ensures that signal looped through directly tuner that reception guaranteed. Energy saved because recording device powered off.
Semiconductors Manual 14th edition
Recommended products
Function Product Silicon switch Switch switch MOSFET 3.3V Silicon Switch Package SOT23 SOT143B SOT143R SOT343 SOT343R SOT143B SOT143R SOT343 SOT343R Type BF1107 BF1108 BF1108R BF1108W BF1108WR BF1118 BF1118R BF1118W BF1118WR Function Product with band switch Package SOT363 SOT363 SOT343 Type BF1215 BF1216 BF1217
control amplifier
MOSFET
Note: Using BF1108 passive loop through switch between input output tuner save considerable energy. example, when used, signal still distributed without having power active splitter circuit HDR. That because BF1108 switch closed when power supplied open when powered applications, BF1118 used instead. Function Product Wideband transistor with gain levels plus bypass mode. Wideband transistor with gain level 10dB bypass mode. Wideband transistor with gain level 10dB bipolar transistor Wideband transistor Package Type
Note: given that there before MOSFET, gain these MOSFETs made slightly lower cross-modulation higher. That way, MOSFET would constantly under even under nominal input level.
SOT363
BGU7033*^
BiMOS MMIC
SOT363
BGU7032*^
SOT363
BGU7031*^
SOT143 SOT89
BFG520 BFG540 BFQ540
check status products, this type been released mass production. this series MMICs designed specifically high linearity (IP3O dBm), noise application like those active splitter tuner. Housed 6-pin SOT363 plastic package, these MMICs equipped with internal bias matched ohms internally. VGAs, current consumption during bypass mode. Only external components needed, thus saving precious circuit board space!
Product highlight: BF11x8 silicon switch, MOSFET
This switch combination depletion type field-effect transistor band switching diode SOT143 SOT343 package. insertion loss high isolation capabilities this device provide excellent switching functions. gate MOSFET isolated from ground with diode, resulting losses. Integrated diodes between gate source between gate drain protect against excessive input voltage surges.
Semiconductors Manual 14th edition
Features
Specially designed loss switching Easy design-in Power losses Power OFF: high isolation OFF, ZERO power consumption
1.4.2 Basic tuner
Application diagram
input From antenna, cable, active splitter, etc.
MOSFET
MOPLL
VAGC
bra500
Recommended products
Function Product Package SOD323 SOD523 SOD882T SOD323 SOD523 SOD523 SOD882T SOD882T SOD323 SOD882T SOD523 SOD523 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT363 SOT666 Type BB152 BB182 BB182LX BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 BB189 Type BF1201 BF1202 BF1105 BF1211 BF1212 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1218 BF1206F Function Product Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 SOD523 Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 SOD523 Package 2-in-1 with band switch MOSFET 2-in-1 SOT363 SOT363 SOT343 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BF1215 BF1216 BF1217
Input filter
Varicap diode
high
Bandpass filter
Varicap diode
high
Function
Product
Function
Product
Oscillator
Varicap diode
high
pre-amplifier
MOSFET 2-in-1
Function
Product
2-in-1
pre-amplifier
Product highlight: BF1206F dual gate mosfet double amplifier specified power applications
device consists dual gate mosfet amplifiers small SOT666 flatlead package. BF1206F true power device specified voltage currents, intended mobile applications where power consumption critical. Performance suitable application supply voltages Volts draincurrents
Features
power specified amplifiers small SOT666 package Shared gate Source leads Each amplifier biased external bias resistor Excellent noise crossmodulation performance
Semiconductors Manual 14th edition
1.4.3 MoCA (Multimedia over Coax Alliance)
Application diagram
Diplexer/
BALUN
Cable Connection
ON/OFF Switched Attenuator ON/OFF
brb401
MoCA Chip BALUN
Recommended products
Function Product Package SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOD822T Package SOT908 SOT89 SOT908 SOT89 Type BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64LX Type BGA7124 BGA7024 BGA7127 BGA7027
SPDT switch
diode
diode
Function (power amplifier)
Product MMIC SiGe:C MMIC
Product highlight: medium power amplifier BGA7124 MMIC
BGA7124 MMIC one-stage driver amplifier, offered lowcost ultra small SOT908 leadless package. delivers output power gain compression superior performance various narrowband-tuned application circuits frequencies 2700 MHz.
Semiconductors Manual 14th edition
Features
2700 frequency operating range small signal gain output power gain compression Integrated active biasing single supply operation Simple quiescent current adjustment shutdown mode
1.4.4 Satellite outdoor unit, noise block (LNB) multiple users
Application diagram
horizontal antenna stage
stage
stage
mixer
amplifier
mixer BIAS
oscillator mixer amplifier high amplifier SWITCH
amplifier
vertical antenna
high
oscillator high
amplifier
stage
stage
stage
mixer
amplifier
brb022
Recommended products
Function Oscillator Product bipolar transistor transistor Function Product General purpose amplifier stage amplifier MMIC gain block Wideband transistor SiGe:C transistor Package SOT343 SOT343F SOT343F Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Package various various various various various Type BFG424W BFG424F BFU725F/N1 Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG424W BFG424F Type BAP64^ BAP51^ BAP1321^ BAP50^ BAP63^ Function Product General purpose amplifier Output stage amplifier MMIC gain block# Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG325
bipolar transistor
Wideband transistor
When using gain blocks (BGA28xx) output stage amplifier, need output inductor anymore. Function stage
bipolar transistor Function Product
Wideband transistor
Product transistor Product transistor SiGe:C transistor SiGe:C transistor
Package SOT343F Package SOT343F
Type BFU725F/N1 Type BFU725F/N1
Function Mixer
switch
diode
diode
also available ultra small leadless package SOD882T.
Product highlight: BGA28xx-family, gain blocks
BGA28xx gain blocks Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuit 6-pin SOT363 plastic package.
Features
Internally matched Reverse isolation Good linearity with second order third order products Unconditionally stable
Semiconductors Manual 14th edition
1.4.5 Satellite Multi Switch DiSEqC SMATV
Application diagram
input terrestrial amplifier input terrestrial input amplifiers satellite dishe(s)
output amplifiers coax SWITCH MATRIX NEEDS (SINGLE) DIODES coax coax coax
brb023
Recommended products
Function Input amplifier terrestrial Product General purpose medium power amplifier Package SOT89 SOT908 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 SOT343F Package Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 BFU725F/N1 Type BAP50^ BAP51^ BAP63^ BAP64^ BAP70^ BAP1321^ BFU725F/N1 Function Product General purpose medium power amplifier General purpose amplifier Wideband transistor SiGe:C transistor Package SOT89 SOT908 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 SOT343F Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 BGM1011 BGM1013 BGM1014 BFG135 BFG198 BFG540 BFU725F/N1
MMIC
MMIC Output amplifier
Function
Product MMIC General purpose amplifier Wideband transistor SiGe:C transistor
Input amplifier
bipolar transistor
bipolar transistor
Function
Product
Switch matrix
diode
diode
Various
transistor
SiGe:C transistor
SOT343F
also available ultra small leadless package SOD882T.
Product highlight: diodes switching matrix
Together with outstanding performance, this component simplify design-in because extremely forward resistance, diode capacitance series inductance. Significant board space saving supplying range high compact package options including SOD523, SOD323 leadless SOD882T.
Semiconductors Manual 14th edition
High isolation, distortion, insertion loss forward resistance (Rd) diode capacitance (Cd) Ultra-small package options
Features
1.4.6 Digital Satellite (high definition)
Application diagram
Coax-in
Balun
(HD) Satellite System Chip (SoC)
brb435
Recommended products
Function Product MMIC Medium Power Amplifier Package SOT89 Type BGA6289 BGA6489 BGA6589
Product highlight: BGA6489 MMIC medium power amplifier
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit 4-pin SOT89 plastic thermal resistance package. BGA6489 provides high-quality performance satellite applications from 2.15 GHz.
output power Single supply voltage needed
Features
Semiconductors Manual 14th edition
Consumer Mobile
Note: looking MoCA Satellite Multi Switch Boxes? chapter Satellite.
1.5.1 Mobile Platforms (GPS mobile radio Reference clock CMMB^ LTE)
Chinese Multimedia Mobile Broadcasting (CMMB) Application diagram
MULTI-BAND TRANSCEIVER RADIO TRANSCEIVER RECEIVER Vref CMMB DECODER Vref VCTCXO BUFFER PROCESSING
TUNER
ANALOG RECEIVER DECODER VIDEO PROCESSOR APPLICATION
brb402
Recommended products
Function Function radio Product MMIC Product Transistor Wideband transistor SiGe:C MMIC J-FET Frequency SiGe:C MMIC SiGe:C MMIC Package SOT891 Package SOT323 SOT891 SOT23 Package SOT891 SOT886 SOT886 Package Wideband transistor SiGe:C transistor SiGe:C MMIC SOT343 SOT343F SOT891 Type BGU7003 Type BFR93AW BFS505 BGU7003 BF510 Type BGU7003 BGU7005 BGU7007* Type BFG425W BFU725F/N1 BGU7003 Function Reference clock Product buffer VCTCXO Frequency Wideband transistor Wideband transistor Package SOT323 SOT363A Type BFR93AW BFM520 Mobile Transistor MMIC Function Product Function Product Wideband transistor SiGe:C transistor SiGe:C MMIC Frequency Package SOT343 SOT343F SOT891 Package Type BFG425W BFU725F/N1 BGU7003 Type BB202LX BB178LX BB179LX BB181LX BB182LX BB184LX BB187LX
Function
Product MMIC
Mobile tuning diode
diode
Varicap diode^
SOT882T
Function
Product Transistor MMIC
CMMB
check status products, this type been released mass production. also SOD523
Product highlight: BGU7003 SiGe:C MMIC
Manufactured NXP's latest SiGe:C process, this high-frequency MMIC delivers high-quality reception with extended battery life. cost-effective, silicon based alternative GaAs devices, offers higher integration easier design-in than discrete bipolar transistors.
Semiconductors Manual 14th edition
Features
Low-noise, high-gain microwave MMIC Maximum stable gain 1.575 110-GHz fT-Silicon Germanium technology Optimized performance (5-mA) supply current Extemely thin, leadless 6-pin SOT891 package Integrated biasing shutdown easy integration
1.5.2 front-end WLAN (802.11n Dual Concurrent)
Application diagram
pass lter antenna SPDT switch medium power ampli
PActrl
APPLICATION CHIP
bandpass lter SPDT
bra502
Recommended products
Function Medium power amplifier Product MMIC Medium power amplifier Package SOT89 SOT908 Type BGA7024 BGA7027 BGA7124 BGA7127 Type BFU725F/N1 BGU7003
Function
Product Transistor MMIC SiGe:C transistor SiGe:C MMIC
Package SOT343F SOT891
Product highlight: medium power amplifier BGA7127 MMIC
BGA7127 MMIC one-stage driver amplifier, offered low-cost ultra small SOT908 leadless package. delivers output power gain compression superior performance various narrowband-tuned application circuits frequencies 2700 MHz.
Features
2700 frequency operating range small signal gain output power gain compression Integrated active biasing single supply operation Simple quiescent current adjustment shutdown mode
Semiconductors Manual 14th edition
1.5.3 2-way radio family radio system
Application diagram
antenna
filter
filter
mixer
buffer SPDT switch FREQUENCY CHIP
filter
driver
bra850
Recommended products
Function SPDT Switch Product diode Bandswitch diode diode Function Product bipolar transistor Wideband transistor Package SOD523 SOD323 various various Package SOT23 SOT323 SOT323 Type BA277 BA591 BAP51^ BAP1321^ Type PBR951 PRF957 PRF947 BFU725F/N1 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Power amplifier Product Gen. purpose wideband ampl. Function Mixer Product bipolar transistor MMIC Function Buffer Product bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 Type BB198 BB156
MMIC Function Product bipolar transistor MMIC
SiGe:C SOT343F transistor SOT343R noise wideband ampl. SOT343R Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363
MMIC
SOT89
Driver
Function
also available ultra small leadless package SOD882T
Product Varicap diodes
varicap diodes
Package SOD523 SOD323
Product highlight: PRF957 silicon wideband transistor
Silicon wideband transistor surface mount 3-pin SOT323 package primarily intended wideband applications front end. transistor widely built LNA, power amplifier, driver buffer band application.
Small 3-pin plastic surface mounted package noise (1.3 GHz) high power gain GHz) Gold metallization ensures excellent reliability
Features
Semiconductors Manual 14th edition
1.5.4 DECT front-end
Application diagram
DECT in-house base station
Application diagram
antenna
antenna
filter
mixer
filter
buffer SPDT switch
switch
CHIPSET
CHIPSET
filter
filter
driver
bra911
bra910
Recommended products
Function Product Package various various various various various various Type BAP51^ BAP55^ BAP142^ BAP63^ BAP64^ BAP1321^
Recommended products
Function Product Package various various various various various various Package SOT343 SOT343 SOT343 SOT343F SOT363 Type BAP51^ BAP55^ BAP142^ BAP63^ BAP64^ BAP1321^ Type BFG410W BFG425W BFG480W BFU725F/N1# BGA2022
Switch
diode
Diode
Switch
diode
Diode
also available ultra small leadless package SOD882T.
Function
Product bipolar transistor MMIC Wideband transistor SiGe:C transistor Linear mixer
Mixer
also
Product highlight: BAP64xx diode switch
Operating with high-voltage handling capabilities, NXP's diodes ideal wide range wireless communication application. Together with outstanding performance, this component simplify design-in because extremely forward resistance, diode capacitance series inductance. Significant board space saving supplying range high compact package options including SOD523, SOD323 leadless SOD882T.
Features
Operate High isolation, distortion, insertion loss forward resistance (Rd) diode capacitance (Cd) Ultra-small package options
Semiconductors Manual 14th edition
Automotive Industrial
Note: looking GPS? chapter 1.5.1 Handset.
1.6.1 Active antenna
Application diagram
antenna stage stage stage
CHIPSET
brb215
Recommended products
Function stage Function stage Product MMIC noise wideband amplifier Package SOT343R SOT343R Package SOT363 SOT363 SOT363 SOT363 Package SOT343F SOT891 Type BGA2001 BGA2003 Type BGM1013 BGM1011 BGA2715 BGA2748 Type BFU725F/N1 BGU7003
Product MMIC General purpose wideband amplifier
Function stage
Product transistor MMIC
SiGe:C transistor SiGe:C MMIC
Product highlight: BGU7003 SiGe:C MMIC
Manufactured NXP's latest SiGe:C process, this high-frequency MMIC delivers high-quality reception with extended battery life. cost-effective, silicon based alternative GaAs devices, offers higher integration easier design-in than discrete bipolar transistors.
Features
Low-noise, high-gain microwave MMIC Maximum stable gain 1.575 110-GHz fT-Silicon Germanium technology Optimized performance (5-mA) supply current Extemely thin, leadless 6-pin SOT891 package Integrated biasing shutdown easy integration
Semiconductors Manual 14th edition
1.6.2 Remote keyless entry, generic front-end with dedicated antenna reception transmission
Application diagram
antenna receiver filter filter mixer FREQUENCY CHIP buffer antenna transmitter filter driver FREQUENCY CHIP
bra851
Recommended products
Function Product bipolar transistor MMIC Wideband transistor Package SOT23 SOT323 SOT323 Type PBR951 PRF957 PRF947 BGA2001 BGA2002^ BGA2003 BGU7003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB148 BB149A BB198 BB156 Function Mixer Product bipolar transistor MMIC Function Buffer Product bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package SOT323 SOT23 SOT363 SOT363 SOT363 SOT908 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 BGA7124
noise SOT343R wideband ampl. SiGe:C MMIC SOT891
Function
Product bipolar transistor MMIC
Driver
Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Package SOD323 SOD323 SOD523 SOD323
Function
Product bipolar transistor MMIC
Function
Product Varicap diodes varicap diodes
Power amplifier
Wideband transistor Amplifier Gen. purpose wideband ampl.
automotive qualified
Product highlight: varicap diodes
Varicap diodes principally used voltage varicap capacitors with their diode function secondary option. These devices ideal voltage controlled oscillators (VCO) band applications.
Features
Excellent linearity Excellent matching Very series resistance High capacitance ratio
Semiconductors Manual 14th edition
1.6.3 Tire pressure monitoring system
Application diagram
antenna filter driver
SENSOR
brb216
Recommended products
Function Product bipolar transistor Wideband transistor Package SOT23 SOT323 SOT23 SOT323 SOT323 Package SOT323 SOT23 SOT363 SOT363 SOT363 Package SOD523 SOD323 Type BFR92A BFR92AW BFR94A^ BFR93AW BFR94AW^ Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB198 BB156
Function
Product bipolar transistor MMIC
Driver
Wideband transistor Amplifier Gen. pupose wideband ampl.
Function
Product Varicap diodes varicap diodes
automotive qualified
Product highlight: BFR94AW silicon transistor
designed amplifiers, mixers oscillators with signal frequencies GHz. This silicon transistor encapsulated plastic SOT323 (S-mini) package. BFR92AW uses same crystal SOT23 version, BFR92A.
Features
High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package AUTOMOTIVE QUALIFIED
Semiconductors Manual 14th edition
1.6.4 radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
input filter
mixer
bandpass filter
mixer
variable filter
limiter deamplifier modulator
filter
oscillator
oscillator
input filter mixer bandpass filter mixer bandpass filter deamplifier modulator
audio
bra501
Recommended products
Function Function input filter OIRT Product transistor Product diode Varicap diode diode JFET Package SOT23 Package SOT23 SOT23 SOD523 SOD323 Type BF862 Type BB201^ BB207 BAP70-02 BAP70-03 Function filter Function Oscillator Product diode Product diode Varicap diode diode Package SOT363 Package SOD323 SOD523 Type BAP70AM Type BB156 BB208-02
Note these recommended discrete products applicable NICEPACS, DDICE: NICE:TEA6840H,TEA6845H,TEA684 NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. these recommended discrete products applicable excluding DICE2:TEF6730HWCE.
Note Phone portable radio (IC:TEA5767/68) varicap BB202 oscillator.
Product highlight: BF862 Junction Field Effect Transistor
Tuning component portfolio contains excellent products radio reception applications, playing vital role in-vehicle media platforms. devices this application ensure excellent reception quality ease design Performance demonstrated reference designs. High performance Junction BF862, specially designed radio amplifiers.
High transition frequency optimized input capacitance excellent sensitivity High transfer admittance resulting high gain Encapsulated versatile easy SOT23 package
Features
Semiconductors Manual 14th edition
1.6.5 E-metering, generic front-end with single antenna ZigBee
Application diagram
antenna
filter
filter
mixer
buffer SPDT switch E-METERING CHIP
filter
driver
bra850
Recommended products
Function SPDT Switch Product diode Bandswitch diode diode Function Product transistor SiGe:C transistor noise wideband ampl. MMIC SiGe:C MMIC Product bipolar transistor MMIC Package SOD523 SOD323 various various Package SOT343F SOT343R SOT343R SOT891 Package Wideband transistor Amplifier Gen. purpose wideband ampl. SOT343 SOT363 SOT363 SOT363 Type BA277 BA591 BAP51^ BAP1321^ Type BFU725F BGA2001 BGA2003 BGU7003 Type BFG425W BGA2031/1 BGA2771 BGA2776 Medium power amplifier Function Mixer Product bipolar transistor MMIC Function Buffer Product bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Wideband transistor Gen. purpose wideband ampl. SOT343 SOT89 SOT908 SOT908 Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BFG21W BGA6289 BGA6489 BGA6589 BGA7124 BGA7127 Type BB198 BB156
Function
Function
Product bipolar transistor
Driver
MMIC
also available ultra small leadless package SOD882T.
Function
Product Varicap diodes
varicap diodes
Product highlight: BGA7127 MMIC medium power amplifier
BGA7127 MMIC one-stage driver amplifier, offered low-cost ultra small SOT908 leadless package. delivers output power gain compression superior performance various narrowband-tuned application circuits frequencies 2700 MHz.
Semiconductors Manual 14th edition
Features
2700 frequency operating range small signal gain output power gain compression Integrated active biasing single supply operation Simple quiescent current adjustment shutdown mode
1.6.6 Plasma Lighting
Application diagram
(plasma) bulb
oscillator
CONTROLLER
brb436
Recommended products
Function driver final final final final final final Function Type BLF571 BLF573S BLF574 BLF578 BLF645 Product MMIC (medium power amplifier) frange (MHz) 1000 1000 1000 1000 1000 1300 1300 1200 1000 27.5 27.2 26.5 Mode operation 1-TONE; 2-TONE; 1-TONE; 2-TONE; 1-TONE; 2-TONE; 1-TONE; PULSED 1-TONE; 2-TONE class class Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133*
Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908
MMIC SiGe:C MMIC
check status products, this type been released mass production.
Product highlight:
NXP's high voltage LDMOS process enables highest power unprecedented ruggedness levels necessary this kind application. BLF578: 1000 operation highest power LDMOS
Features
Highest power device Unprecedented ruggedness Low-thermal resistance design very reliable operation Very consistent device performance Broadband device flexible
Semiconductors Manual 14th edition
1.6.7 Medical Imaging
Application diagram
Magnet
GRADIENT AMPLIFIER
Gradient coils coils
GRADIENT AMPLIFIER
WAVEFORM GENERATOR
GRADIENT AMPLIFIER
amplifier
ELECTRONICS
COMPUTER IMAGE DISPLAY
brb434
Recommended products
Function driver driver driver final final final final Type BLF871(S) BLF881 BLF571 BLF573S BLF574 BLF578 BLF645 frange (MHz) 1000 1000 1000 1000 1000 1000 1300 1200 27.5 27.2 26.5
Product highlight:
NXP's line High voltage LDMOS devices enable highest power output feature unequalled ruggedness pulsed operation applications. high power densities enable very compact amplifier design.
Features
Best broadband efficiency Highest power (density) devices Unrivalled ruggedness Very consistent device performance
Semiconductors Manual 14th edition
1.6.8 Microwave furnace application
Application diagram
antenna
oscillator
CONTROLLER
isolator
brb418
Recommended products
Function Driver Final Final Function Type BLF6G24-12 BLF6G24-180PN BLF7G24L (S)-250P Product MMIC (medium power amplifier) frange 2000 2200 2000 2200 2500 2700 Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 PL(AV) 27.5 27.5 Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* 17.5 16.5 Availability 2010 2010 2010
MMIC SiGe:C MMIC
check status products, this type been released mass production.
Product highlight:
NXP's generation LDMOS technology together with advanced package concepts enable best class performing power amplifiers. unsurpassed ruggedness thermal resistance connection with high intrinsic efficiency make these transistors ideally suited furnace application.
Features
Excellent ruggedness Very consistent device performance thermal resistance design unrivalled reliability Very easy design with
Semiconductors Manual 14th edition
Technologies focus products
fastest TTFF^ with LNAs that proven QUBiC4X SiGe:C
TTFF Time-To-First-Fix
LNAs BGU7003, BGU7005, BGU7006 BGU7007
Manufactured NXP's breakthrough QUBiC4X SiGe:C process technology available industry's smallest package, this highly integrated LNAs reduce cost while delivering better sensitivity, greater immunity against jamming signals, higher linearity.
These LNAs designed receiver applications, produced NXP's industry-leading QUBiC4X process, 0.25-µm SiGe:C technology. They have very noise figures superior linearity performance, they help improve overall sensitivity, which turn leads faster Time-To-First-Fix (TTFF) better tracking. proven QUBiC4X process improves overall performance means LNAs less expensive offer higher, more flexible performance than their GaAs counterparts. They restore sensitivity, provide greater immunity against out-of-band cellular signals, reduce filtering requirements, lower overall cost. They placed close antenna, minimizing noise figure. Additional gain amplifies signal raises on-board signal-to-jammer ratio. receiver close primary phone antenna, best GSM/UMTS performance, while antenna placed away. This improves antenna-toantenna isolation results higher performance.
Features Requires only external components (including decoupling) build complete front-end. Requires only external matching component current consumption noise figure (NF): 1.575 current consumption power-down mode protection pins Supply voltage: 2.85 optimized Proven, robust QUBiC4X SiGe:C process technology GHz)
supply voltage Type Package BGU7003 BGU7005 BGU7006* BGU7007* SOT891 SOT886 WLCSP*** SOT886 2.85 2.85 2.85 2.85
supply current
1.575 insertion power noise input power gain compression gain figure |s21|
input third-order intercept point IP3i
PI(1dB)
18.3 16.5** 16.5** 18****
2.85 2.85 2.85 2.85
check status products, this type been released mass production. 16.5 without jammer 17.5 with jammer solder bumps, pitch **** without jammer with jammer Semiconductors Manual 14th edition
Always right match with latest generation SiGe:C wideband transistors
Meet trend towards higher frequencies. With Semiconductors' latest SiGe:C microwave transistors, high switching frequencies plus extremely high gain noise. this easy-to-use SOT343F package. It's ideal solution applications GHz.
Benefits Plastic surface-mount SOT343F package SiGe:C process delivers high switching frequency from silicon-based device Cost-effective alternative GaAs devices RoHS compliant Applications noise amplifier (LNA) microwave communications systems stage mixer direct broadcast satellite (DBS) low-noise blocks (LNBs) systems Satellite radio WLAN/WiMAX CDMA applications, DVB, CMMB
microwave transistors deliver unbeatable blend high switching frequency, high gain very noise. Thanks ultra-low noise figures, they perfect your sensitive receivers particularly those high-performance cell phones. Alternatively, with high cut-off frequencies, they your ideal solution microwave applications range, such satellite receivers automotive collision avoidance radar. These generation SiGe:C wideband transistors their outstanding performance from innovative silicongermanium-carbon (SiGe:C) BiCMOS process. QUBiC4X designed specifically meet needs real-life, highfrequency applications delivers unrivalled fusion high power gain excellent dynamic range. combines performance gallium-arsenide (GaAs) technologies with reliability silicon-based process. addition, with these transistors, don't need biasing negative biasing voltage. it's much more cost-effective solution than GaAs pHEMT devices.
Full portfolio overview generation wideband transistors chapter 3.3.1
Semiconductors Manual 14th edition
Medium-Power MMICs BGA7xxx broadband applications
Broadband QUBiC4 MMICs 400-2700 applications
Produced NXP's proven QUBiC4 BiCMOS process, these MMICs bring improved thermal performance added-value features 400-2700 applications lower cost than GaAs versions.
Features protection pins Single-supply operation (3.3 Integrated active biasing Fast shutdown Quiescent current adjustment package options, smallest leadless package leaded SOT-89 Applications Wireless infrastructure (base station, repeater) eMetering Broadband (MoCA) Satellite Master Antenna (SMATV) Industrial applications W-LAN RFID Manufactured NXP's breakthough QUBiC4 process, these MMICs deliver comparable level performance their GaAs equivalents, lower cost with additional features, like thermal performance robustness. QUBiC4 process makes possible support even more features, including active biasing, quiescent adjustment, interfaces, power-saving shutdown mode. increase design flexibility, MMICs support single-supply (3.3/5 operation. And, save space, they available smallest package size with leadless options. MoCA These MMICs exceptionally well-suited MoCA (Multimedia over Cable Alliance) both dongles. MMICs offer system designer ability
Supply
tailor gain P1dB specific platform requirements. Between 475-625 1.15-1.5 gain flatness unrivalled. Medium Power MMICs operate current consumption offer fast shut-down function save much power possible. With protection, active biasing SOT89 package availability, design-in simplified requires minimum external components. Base station high power level these MMICs makes them excellent choice mobile-infrastructure applications. They offer highest gain overall base stations frequencies. quiescentcurrent feature allows high efficiency linearity Class-AB operation. bias circuitry delivers stable performance over temperature supply variations. integrated shutdown function power-saving feature used fast shutdown. MMICs tuned band between GHz.Unbeatable thermal performance °C/W) improves overall quality reliability. eMetering These MMICs also very well suited eMetering applications 900-2400 band. High integration singlesupply operation mean that MMICs combined with just other components create full-featured solution. MMICs operated battery power (with energysaving shutdown mode) tunable between Class They also work power-line network, they support metering with without power connection. builtin reliability quality silicon-based process provides longevity, does improved performance.
Shutdown control performance II(D)L(SHDN) PL(1dB) OIP3 performance 1960 PL(1dB) OIP3
VI(D)L(SHDN)
VI(D)H(SHDN)
Type
Package
(MHz) (mA) (mA) (µA) BGA7124 SOT908 leadless 2700 Vbias BGA7024 SOT89 leaded 2700 BGA7127* SOT908 leadless 2700 Vbias BGA7027* SOT89 leaded 2700 BGA7130* SOT908 leadless 2700 Vbias BGA7133* SOT908 leadless 2700 Vbias specifications BGA7130 BGA7133 target specifications until development completed. check status products, this type been released mass production. Semiconductors Manual 14th edition
Low-noise generators microwave mmWave radios
generators (integrated VCO/PLL) TFF11xxxHN
Manufactured NXP's breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free generators power consumption low-spurious solutions that simplify design-in lower total cost ownership.
These low-noise local-oscillator (LO) generators, optimized many different microwave applications between GHz, deliver highly accurate performance small footprint. They require alignment frequency modification production line, they simplify manufacturing. High integration saves board space makes design-in easier, lower overall cost faster development, enabling quick time-to-market. Since these manufactured NXP's industry-leading QUBiC4X SiGe:C process, they offer better overall performance, more robust than their GaAs equivalents, consume much less power. process technology also enables higher integration, added features. owns industrial base production (wafer fab, test, assembly), volume supplies assured. TFF1003HN basis entire family generators. coverage 12.8 13.05 accepts input signals from MHz. divider 128, 256, output level with stability family generators completed range different devices operating center frequency ranging from GHz. performance these devices consistent with TFF1003HN. generators have very power dissipation typical available space-saving 24-pin HVQFN package.
Features TFF11xxxHN family: Lowest noise generators full family range Maximum power consumption types, typical Phase-noise compliant with IESS-308 (Intelsat) Proven QUBiC4X SiGe:C technology (120-GHz process) External loop filter Differential input output Lock-detect output Internally stabilized voltage reference loop filter 24-pin HVQFN (SOT616-1) package
Applications TFF11xxxHN family Industrial/Medical Test Measurement Equipment Electronic Warfare (EW) Electronic Countermeasures (ECM) Point Point Point Multi-Point Satellite Communication
Full portfolio overview noise generators general microwave applications chapter 3.4.2
Semiconductors Manual 14th edition
Complete satellite portfolio architectures
satellite devices BFU725F/N1 BGA28xx
Designed LNAs, mixers, amplifiers, these robust, small-footprint products manufactured NXP's groundbreaking QUBiC4X SiGe:C QUBiC4+ process technology latest additions NXP's leading portfolio satellite LNB.
BFU725F/N1 transistor BFU725F/N1 transistor that used part mixer LNB. either application, delivers power consumption, good noise linearity, lowest cost compared GaAs pHEMT solution. BFU725F/N1 mixer Ku-band Power consumption: Single supply: Noise, Single Side Band: (including BPF) Linearity: better than OIP3 Gain, SSB: (including BPF) RF/LO/IF Match: better than 12/15/18 Broadband unconditionally stable LO-RF isolation better than
BFU725F/N1 C-band Power consumption: Single supply: Noise: 0.65 Linearity: better than OIP3 Gain: In/Out Match: better than Broadband unconditionally stable BGA28xx MMICs amplifiers (1st stage output stage) compatibility with existing designs, series uses market standard package, SOT363 pin-compliant SOT363F package. pinning identical NXP's current gain block family, blocks deliver similar noise figures. features include flatter gain, gain slope improved P1dB Icc, necessity output inductor (also high P1dB models). Internally matched Gain slope Single supply current Reverse isolation: Best-in-class linearity current consumption Noise figure: Unconditionally stable High compression point models work without output inductor 6-pin SOT363 plastic package These products BFU725F/N1 transistor mixer applications, BGA28xx series MMICs amplifiers most recent additions NXP's
BFU725F/N1 stage Ku-band Power consumption: Single supply: Noise, SSB: typically Linearity: better than OIP3 Gain, SSB: typically 10.5 In/Out match: better than 7/12 Broadband unconditionally stable
Semiconductors Manual 14th edition
leading portfolio satellite LNB. They join other discrete products, including oscillators, amplifiers, switches, biasing, provide complete coverage architectures. Since transistor MMICs manufactured NXP's industry-leading QUBiC4X SiGe:C QuBiC4+ process,
they offer better overall performance more robust than their GaAs equivalents lowest cost. process technology also enables higher integration, added features. owns industrial base production (wafer fab, test, assembly), volume supplies assured.
Satellite outdoor unit, multiple users
horizontal antenna stage stage stage
mixer
amplifier
mixer BIAS
oscillator mixer amplifier high amplifier SWITCH
amplifier
vertical antenna
high
oscillator high
amplifier
stage
stage
stage
mixer
amplifier
brb022
NOTE: Also look chapter 1.4.4 satellite outdoor unit.
Quick reference satellite gain MMICs
Type Package
BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363
(mA)
12.4 16.4 19.6 22.7 15.4
(dB)
Gain (dB) OIP3 (dBm)
11.5 13.6 18.2 16.1 20.9 17.7
@-3dB (GHz)
Gain (dB)
20.2 22.1 25.4 31.2 23.3 31.9 23.4
(MHz)
20.0 22.3 26.2 32.0 22.9 31.2 23.0
(MHz)
20.2 22.1 25.4 31.2 23.2 31.8 23.3
1550 (MHz)
20.6 23.0 25.5 30.6 23.9 32.6 24.0
2150 (MHz)
20.6 23.8 25.8 28.7 24.0 31.4 24.3
output inductor necessary when using BGA28xx Gain blocks output stage.
Semiconductors Manual 14th edition
VSAT, 2-way communication satellite
Design Ku-band VSAT transmitter transceiver that meets IESS-308 Ku-band Generator IC's VSAT
TFF100xHN family Ku-band PLLs, with integrated intended phase-noise Local Oscillator (LO) circuits Ku-band VSAT transmitters transceivers. Manufactured highperformance SiGe:C process, delivers extremely phase noise complies with IESS-308 from Intelsat.
VSAT networks commonly used transmit narrowband data, such point-of-sale transactions credit cards, transmit broadband data that supports satellite Internet access remote location, VoIP, video. network typically consists dish antenna, outdoor unit, indoor unit. outdoor unit used frequency translation between usually includes microwave-based uplink/downlink separator, Noise Block (LNB) receiving downlink signals, Block Converter (BUC). VSAT IC's used create generator linear (meaning conversion done mixing with LO). enable precise frequency time multiplexing, downlink signal provides accurate frequency reference MHz. indoor unit frequency multiplexes this with uplink signal, signal needs frequency locked reference. TFF100xHN IC's housed 24-pin HVQFN (SOT616-1) package. pins have been assigned optimal performance. Three voltage domains used separate block pins each output (OUT-P) OUT-N) have been reserved match typical layout using linewidth microstrip 20-mil RO4003 board (1.1 mm). ground pins have been placed next reference input output, and, minimize crossings application, supply pins same side
Features Phase noise compliant with IESS-308 (Intelsat) Differential input output Divider settings Lock-detect output SiGe:C technology (120-GHz process) HVQFN24 (SOT616-1) package Applications VSAT block-up-converters VSAT down conversion Local oscillator signal generation
Semiconductors Manual 14th edition
Satellite
VSATs
Typical VSAT network
synchronized QPSK data band carrier range 0.95~1.45 (extended range: 0.95~1.7 GHz) from indoor unit
mixer
band pass filter
solid state power
13.05 settings (12.8 settings) (/48) 156.25 (208.83 kHz)
203.90625 (200)
12.8~13.05 on-chip
band pass filter /1305 (/960)
TFF1003HN 203.90625 (200) 13.05 (12.8) TFF1003 with on-chip
clean build around VCXO narrow bandwidth
brb200
Complete generator linear with TFF1003HN
Type
Package
fIN(REF)
phase noise N=64
fo(RF) (GHz) 12.8~13.05 14.75~15
Output buffer RLout(RF)
Input
TFF1003HN TFF1007HN SOT616 SOT616 50~815 230.46~234.38
dBc/Hz -104
Semiconductors Manual 14th edition
CATV C-family Chinese SARFT standard
Connecting people, protecting your network
Specially designed Chinese Hybrid Fiber Coax (HFC) infrastructure, CATV C-family offers total solution cable networks. both flexible enough connecting rural communities part China's `Connecting every village' program powerful enough upgrading major cities from analog high-end digital services. C-type devices compliant with Chinese State Administration Radio, Film Television (SARFT) standard, cover most applications range.
Further extending high quality CATV portfolio, this family lets address even wider range applications. Dedicated solutions implementation CATV systems China, C-type devices deliver performance need modern infrastructures. BGY588C, BGE788C BGD712C devices cover frequency range from MHz. Extending C-family portfolio into high-end segment, CGD944C, CGD942C, CGY888C BGO807C operate between have been specifically tested under Chinese raster conditions. Manufactured using GaAs HFET process, CGD942C, CGD944C high-gain, highperformance power doublers. They capable satisfying demanding requirements top-end applications including high-power optical nodes. GaAs HFET MMIC dies providing design' best protection levels with needs external components normally used with GaAs pHEMT devices. CATV C-type devices feature see-through that makes easy distinguish them from counterfeit products.
Products BGY588C, BGE788C, CGY888C BGY835C push-pull amplifiers BGD712C, CGD944C CGD942C power doublers BGO807C BGO807CE optical receiver Features Excellent linearity, stability reliability High power gain Extremely noise Silicon Nitride passivity GaAs HFET dies high devices Benefits Compliant with Chinese SARFT networks standard Transparent allows confirmation product authenticity Rugged construction
Semiconductors Manual 14th edition
BGY588C, BGE788C, CGY888C BGY835C last stage network structure called terminating amplifier `user amplifier' close subscribers. Each terminating amplifier requires single module such BGY588C MHz, BGE788C CGY888C systems. These modules fitting perfectly Chinese `Connecting Every Village' projects.
BGD712C BGD712C MHz, power doubler module. been designed optical nodes including ordinary optical receivers distribution amplifiers. also used line extender amplifiers together with push-pull module, such BGY785A BGY787. such used widely Chinese `Connecting Every Village' projects.
port
BGY588C BGE788C BGY835C CGY888C
port
bra820
port
BGY785A BGY787
BGD712C
port
bra821
CGD944C CGD942C full GaAs power doublers modules, CGD942C CGD944C offer high output power better than other modules. Designed high-end networks containing optical nodes with multiple out-ports, these modules enable each port directly cover least subscribers. These devices ideal when used upgrading networks MHz.
CGD942C/CGD944C
port
BGO807CE BGO807CE integrated optical receiver module that provides high output levels includes integrated temperature compensated circuitry. your optical node design, BGO807CE enables high performance/ price ratio ruggedness. When upgrading network from analog digital BGO807CE perfect fit.
CGD942C/CGD944C
port
BGD812
port
BGO807CE
switch
BGY885A BGD812 BGY887
CGD942C/CGD944C
port
BGO807CE
BGD812
port
bra823
BGY885A
CGD942C/CGD944C BGO807CE
port
bra822
Semiconductors Manual 14th edition
C-family application information
Application Optical node Optical receiver Distribution amplifier Line extender amplifier Terminating amplifier BGY588C BGE788C CGY888C BGD712C BGO807C CGD944C CGD942C
Push-pull amplifiers
Parameters Power gain (dB) Slope (dB) Composite triple beat (dBc) Composite order distortion (dBc) Noise (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGY588C 34.5 BGE788C 34.2 CGY888C 35.5 typ. typ. BGY835C typ.
Power doublers
Parameters Power gain (dB) Slope (dB) Composite triple beat (dBc) Composite order distortion (dBc) Noise (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGD712C 18.5 CGD944C CGD942C
Optical receiver
Parameters Responsivity (V/W) Slope (dB) Third order intermodulation distortion (dB) Second order intermodulation distortion (dB) Noise pA/Sqrt (Hz) Total current consumption (mA) Frequency range (MHz) Connector min. range max. max. max. typ. range BGO807C BGO807CE
Semiconductors Manual 14th edition
2.7.1 GaAs CATV solutions CGY888C, CGD942C CGD944C Complete GaAs amplifier solutions Chinese networks
These high-performance GaAs solutions, specially designed Chinese SARFT standard, provide complete functionality format that reduces chip-count lowers overall cost.
Products 870-MHz push-pull amplifier: CGY888C 870-MHz power doublers: CGD942C (23-dB gain), CGD944C (25-dB gain) Features GaAs HFET process best performance lowest chip-count Excellent linearity, stability, reliability High power gain Extremely noise Excellent return-loss properties Benefits Fully compliant with Chinese SARFT networks standard Transparent confirms product authenticity Rugged construction Unconditionally stable Thermally optimized design Applications Hybrid Fiber Coax (HFC) applications Line extenders Trunk amplifiers Fiber deep-optical-node (N+0/1/2) support Chinese CATV infrastructure applications single-source supplier, offers C-family, complete line dedicated amplifier modules that deliver very high level performance required next-generation networks. family includes 870-MHz push-pull amplifier CGY888C, GaAs upgrade NXP's industry-leading BGY888 BGY835C products, 870-MHz power doublers: CGD942C, which typical gain CGD944C, with typical gain modules flexible enough connect rural communities part China's `Connect Every Village' project, powerful enough upgrade major cities from analog high-end digital services.
modules have been tested under Chinese raster conditions fully comply with Chinese SRAFT standard. They also cover most applications range compatible with previous generations solutions, they used upgrade existing networks higher level performance. Produced NXP's advanced GaAs HFET process, modules deliver excellent linearity with extremely noise, work seamlessly together. GaAs process improves performance and, reducing chip count, saves overall cost. offers stronger signal strength than there fewer amplifiers required, provides superior protection compared GaAs pHEMT processes, there's need external components. CGY888C well suited last stage network, which known terminating amplifier user amplifier since close subscribers. CGD942C CGD944C offer higher output power better than other power doublers, they ideal networks that have optical nodes with multiple out-ports. modules enable each port cover least subscribers directly. C-family modules delivered with transparent caps that make easy distinguish them from counterfeit products. Unmatched protection levels: standard CATV SOT115 hybrids, power doublers push pulls, released 2009 onwards will have build-in extra protection existing very high level surges. Those surge levels will leave devices without damage destruction. Human body biased levels will increase respectively 2000 1500 which making CATV devices most robust product market today.
Semiconductors Manual 14th edition
Highly efficient line-up GaAs modules sustainable CATV networks
high-gain power doublers CGD104xHi push-pulls CGY104x
Designed 1-GHz "sustainable networks," these high-performance GaAs devices enable extended bandwidth higher data rates. They deliver increased network capacity make high-end services like HDTV, VoIP, digital simulcasting.
features Excellent linearity, stability, reliability High power gain power doublers Extremely noise Dark Green products GaAs HFET dies high-end applications Rugged construction Superior levels protection Integrated ringwave protection Design optimized digital channel loading Temperature compensated gain response Optimized heat management Excellent temperature resistance benefits Simple upgrade 1-GHz capable networks total cost ownership High power-stress capability Highly automated assembly applications Hybrid Fiber Coax (HFC) applications Line extenders Trunk amplifiers Fiber deep-optical-node (N+0/1/2) Bridgers
CATV GaAs platform lay-out
power doublers CGD104xH CGD104xHi ideal line extenders trunk amplifiers. They support fiber deep-optical-node applications (N+0/1/2), delivering highest output power market today. GaAs HFET process delivers high gain, excellent ratings, along with lower current. CGY1047x push-pull family first line-up market combining very noise, best-in-class distortion parameters, "carbon footprint" capabilities. delivers best performance lowest power consumption, reduces OPEX emissions NXP's 1-GHz solutions designed durability offer superior ruggedness, extended temperature range, high power overstress capabilities, extremely high levels. result, they also reduce cost ownership. GaAs inserted HVQFN package that then mounted thermal vias that manage heat transfer heat sink. Temperature-control circuitry keeps module's high performance stable over wide range temperature. Assembly fully automated requires almost human intervention, repeatability remains very high.
Semiconductors Manual 14th edition
Upcoming products Additional push-pulls, currently under development, will extend capabilities power doublers even further, supporting almost modern applications. push-pull CGY1041 will deliver gain CGY1043 gain
CGY1049 gain CGY1032 gain also developing new, highly integrated power doubler. CGD1046Hi will deliver, 26-dB power gain with 60-dBmV output power excellent protection, ultimate high-quality, distortionless devices.
Quick reference data CATV power doublers push pulls
CATV power doublers Parameters
Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite order distortion (dB) Noise (@fMAX) (dB) Total current consumption (mA) Frequency range (MHz) typ. typ. typ. typ. max. typ. range
CGD1040Hi 1003
CGD1042H 1003
CGD1042Hi 1003
CGD1044H 1003
CGD1044Hi 1003
CGD1046Hi* 1003
CATV 1-GHz push-pulls Parameters
Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite order distortion (dB) Noise (@fMAX) (dB) Total current consumption (mA) Frequency range (MHz) typ. typ. typ. typ. max. typ. range
CGY1041 1003
CGY1043 1003
CGY1049* 1003
CGY1032* 1003
check status products, this type been released mass production.
CGD104xHi
port
CGD104xHi
port
CGD104xHi
port
switch
CGD104xHi
port
bra822
optical node with multiple out-ports using CGD1040Hi CGD1042Hi CGD1044Hi CGD1046Hi Semiconductors Manual 14th edition
Doherty amplifier technology state-of-art wireless infrastructure
Best class designs enable considerable energy savings
NXP's latest power amplifier designs enable wireless infrastructure with significantly higher energy efficiency towards "Green Base Stations". order achieve highest efficiencies currently possible, combines latest generations LDMOS technology (Gen6 with Doherty concept. This way, optimized intrinsic performance LDMOS technology combines perfectly with extrinsic Doherty technology into very efficient, high gain, readily linearizable, lower operation cost power amplifiers. Developed W.H. Doherty 1936, Doherty amplifier remained largely dormant because dominant mobile communication system modulation techniques (FM, GMSK EDGE) require high peak-to-average ratio (PAR) signals. However, high power added efficiency architecture Doherty amplifier made preferred option today's service providers base stations transmitting multi-carrier standards. NXP's Doherty amplifiers ensure high-efficiency while maintaining very similar peak power capability transistors combined. input output sections internally matched, benefiting amplifier designs with high gain good gain flatness phase linearity over wide frequency band.
Integrated Doherty even offer world's first fully integrated Doherty designs: From outside these devices look like ordinary transistor. fact, they completely integrated Doherty amplifiers that deliver highest efficiency levels base station applications. With ease design-in ordinary class transistor, they also provide significant space cost savings. features benefits Contains splitter, main- peak amplifier, delay lines combiner package efficiency average power additional tuning manufacturing Design easy with single class transistor Ideally suited space-constrained applications (e.g. remote radio heads, antenna arrays) Currently available TD-S-CDMA (BLD6G21L(S)-50) W-CDMA (BLD22L(S)-50); chapter 3.7.1.4 details
Semiconductors Manual 14th edition
Discrete Doherty amplifiers Next integrated versions, also offers product demonstrators very efficient, high power, discrete Doherty amplifiers. designs based BLF7G22LS-130 device deliver 47.0 with efficiency 15.7 gain W-CDMA applications.
features benefits Most efficient Doherty amplifier designs available date Production proven, very consistent designs NXP's LDMOS provides unsurpassed ruggedness Currently available following frequency bands: 1805 1880 (DCS) 1930 1990 (PCS) 1880 2025 (TD-SCDMA) 2110 2170 (UMTS LTE) 2300 2400 (WiBRO LTE) 2500 2700 (WiMAX LTE) 3300 3800 (WiMAX) product demonstrators supported comprehensive support documentation hardware. Please chapter 3.7.1.7 complete list available designs.
flagship 3-way Doherty demonstrator even achieves efficiency average output power 15.0 gain with carrier W-CDMA signal. current design covers W-CDMA standard band operation tailored towards high yield, minimum tuning, volume manufacturing.
Featured Doherty designs
Freq band (MHz) 728-756 790-821 869-894 925-960 1805-1880 1930-1990 2110-2170 2300-2400 2500-2700 3400-3600 PPEAK (dBm) 59.1 58.9 58.2 49.5 52.5 POUT-AVG (dBm) 50.5 44.5 Gain (dB) 15.5 14.5 11.5 Drain Eff. Type MMPP MPPM Main transistor BLF6G10-260PM BLF6G10LS-200RN BLF6G10-200RN BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN BLF7G27-75P BLF6G27-150P BLF6G38-50 Peak transistor BLF6G10-260PM BLF6G10LS-200RN BLF6G10-200RN BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN BLF7G27-75P BLF7G27-150P BLF6G38-50
Semiconductors Manual 14th edition
2.10
Boost efficiency lower system cost wireless infrastructure with
technology power
This gallium-nitride (GaN) technology, result collaborative development effort, enables high-power amplifiers that deliver very high efficiency next-generation wireless communication systems.
Features Power density that five times higher than LDMOS operation High gain High efficiency High reliability parasitics Benefits High frequency combined with high power Broadband operation that lets single power amplifier function multiple frequencies Enabling technology next-generation, high-power, Switch Mode Power Amplifier (SMPA) architectures Lowers system costs operational expenditures Ideal tower-top base stations Applications Cellular base stations WiMAX Broadcast Radar Collaborating with United Monolithic Semiconductors Fraunhofer Institute Applied Solid State Physics, Semiconductors developing gallium-nitride (GaN) process technology that boosts performance next-generation power amplifiers. process, with high frequency combined with high power, puts ideal position being able support future applications while continuing evolve well-established LDMOS technology. technology delivers numerous benefits manufacturers infrastructure equipment. Using technology transmitter represents significant cost savings system manufacturing, along with major improvements system performance flexibility.
Most today's base station power amplifiers limited specific applications. GaN-based technology lets operators "universal transmitter" switch between systems frequencies, they instantly meet demands base station's coverage area. transistors enable much more efficient power amplifiers result drive down operational costs telecom operators. transistors operate much higher junction temperatures than GaAs-based devices, ideal candidate environments with reduced cooling capabilities, such tower-top base stations. Also, with high power densities, potential expand into other areas, including high-power broadcast applications, where solid-state power amplifiers built with vacuum tubes still norm. NXP's first broadband power amplifiers expected available 2010, with Switch Mode Power Amplifiers (SMPAs) following quickly thereafter.
Performance (targets)
Saturated output power Frequency Maximum Linear power gain 2C-WCDMA linear efficiency with OPBO
Assembly power standard ceramic package
Semiconductors Manual 14th edition
2.11
Looking leader SiGe:C? You've just found
QUBiC4 process technology
NXP's innovative high performance SiGe:C QUBiC4 process allows customers incorporate more functionality into devices with less space, competitive cost, superb reliability significant manufacturing advantages. state-of-the-art QUBiC4 technology extensive availability speeds migration from GaAs components silicon enabling cutting-edge products with best class low-noise performance, linearity, power consumption, immunity out-of-band signals, spurious performance output power. NXP's QUBiC mature process mass production since 2002 with continuous performance upgrades since then. QUBiC4 process automotive qualified dual sourced high volume NXP-owned inch waferfabs providing flexible, cost manufacturing with high yields very field.
QUBiC4 variants, each having it's benefits specific application areas: QUBiC4+ QUBiC4+ BiCMOS process features 0.25 CMOS with metal layers integration dense digital logic based smart functionality, rich active passive devices high-frequency mixed-signal designs including thick metal layers high quality inductors. device set; includinges NPNs with breakdown voltage (BVce0) noise figure GHz), VPNPs, high voltage with breakdown voltage, differential single ended varicaps with Q-factor>30, scalable inductors with Q-factor>20, lateral PNP's, 0.25 CMOS, 137, 2000 ohm/sq. poly active resistors, ohm/sq. SiCr thin film resistor, fF/m2 oxide capacitor fF/m2 capacitor, fF/m2 oxide capacitors various other devices including L-PNPs, isolated NMOS, CMOS RF-CMOS transistorscapacitor. QUBiC4+ process silicon based ideal applications GHz) e.g. medium power amplifiers dBm. QUBiC4X QUBiC4X BiCMOS process SiGe:C based extension QUBiC process high-frequency mixed signal designs offers features rich devices QUBiC high-frequency mixed-signal designs; including also with breakdown voltage very noise figure 10GHz). 0.25 CMOS, 220, variety resistors, fF/m2 oxide capacitor fF/m2 capacitor. QUBiC4X: first SiGe:C process ideal applications typically 0.8dB GHz) ultra noise applications, e.g. LNAs mixers. QUBiC4Xi QUBiC4Xi BiCMOS process further enhances QUBiC4X process offers additionally features devices high-frequency mixed-signal designs; including NPNs with breakdown voltage ultra-low noise figure Ghz), 0.25 CMOS, several resistors, fF/m2 oxide capacitor fF/m2 capacitor. QUBiC4Xi the: newest SiGe:C process improved GHz) even lower noise figure GHz) ideal applications beyond GHz, e.g. generators.
Semiconductors Manual 14th edition
QUBiC4Xi QUBiC4X
SiGe:C
fmax 180/200
SiGe
fmax 137/180
+VPNP +TFR
QUBiC4+ Baseline, 0.25um CMOS, single poly, metal Digital gate density gates/mm2 fT/fMAX= 37/90 +TFR Thin Film Resistor Dual Gate Oxide +HVNPN High Voltage +VPNP Vertical -4ML high density 5fF/µm2 capacitor Wide range active high quality passive devices Optimized 5GHz applications QUBiC4X SiGe:C process fT/fMAX= 137/180 optimized applications QUBiC4Xi Improves fT/fMAX 180/200 Optimized ultra-low noise microwave above
QUBiC4X 2006 CMOS 0.25um, Bipolar 0.4um, Double poly, Deep trench, SiGe:C 137/180 (SiGe:C) 60/120 (SiGe:C) planned 10GHz: NMOS PMOS Metal Poly-Poly 5fF/um2 Poly (64/220/330/2K), Active (12, 57), High Precision SiCr single ended, differential, 30-50 Thick Metal, Deep trench isolation, High substrate LPNP, Isolated-NMOS (MIM) QUBiC4X 2008 CMOS 0.25um, Bipolar 0.3um, Double poly, Deep trench, SiGe:C 180/200 (SiGe:C) (SiGe:C) planned 10GHz: NMOS PMOS Metal Poly-Poly 5fF/um2 Poly (64/220/330/2K), Active (12, 57), High Precision SiCr single ended, differential, 30-50 Thick Metal, Deep trench isolation, High substrate LPNP, Isolated-NMOS (MIM)
QUBiC4+
BiCMOS
ft/f 37/90
+HVNPN -4ML
Features Release production CMOS/Bipolar Ft/Fmax (GHz) Ft/Fmax (GHz) BVce0: HV/LV V-PNP BVcb0 (GHz CMOS Voltage Dual Gate Noise figure (dB) RFCMOS (GHz) Isolation GHz) Interconnection (AlCu with Plugs) Capacitors Resistors (Ohm/sq) Varicaps (single-ended differential) Inductors (1.5nH Ghz) scalable Other devices Mask count
QUBiC4/4+/4DG 2002/2004/2006 CMOS 0.25um, Bipolar 0.4um, Double poly, Deep trench, 37/90 (Si) 28/70 (Si) 2GHz: NMOS PMOS Metal Poly-Poly 5fF/um2 Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270) single ended, differential, 30-50 Thick Metal, Deep trench isolation, High substrate LPNP, Isolated NMOS (MIM) (DG)
Semiconductors Manual 14th edition
2.12
Microwave Radar
NXP, your partner High Performance microwave applications
years history semiconductor technology component design. more than decades leading providing high performance technologies microwave applications. company built strong position field small signal power transistors microwave amplifiers with solid growing, best-in-class devices processing technologies.
were first semiconductor company supply S-band transistors (2700 3500 MHz) based laterally diffused metal-oxide-silicon (LDMOS). further strengthen position towards future, currently develop high power high-bandwidth technologies based gallium nitride (GaN) material. Another enabling technology NXP's BICMOS process QUBiC that available several variants with GHz, each specialized address specific small signal applications. product portfolio encompasses: noise amplifiers (LNA) Variable gain amplifiers (VGA) Mixers, Local oscillators (LO) Generators Coming from component background, also focuses architectural breakthroughs highly integrated products microwave millimeter wave. example family Generators from with integrated Phase-Locked Loop Voltage Controlled Oscillator. Another example integrated power module S-band (3.1-3.5 GHz) Both products highlighted following: small signal product highlight: generators TFF11xxxHN Manufactured NXP's breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free generators low-power, low-spurious solutions that simplify design-in lower total cost ownership.
Features Lowest noise generators range Maximum power consumption types, typical Phase-noise compliant with IESS-308 (Intelsat) Proven QUBiC4X SiGe:C technology (120 process) External loop filter Differential input output Lock-detect output Internally stabilized voltage reference loop filter Power product highlight BLS6G2933P-200 first LDMOS based, industry standard pallet produced NXP. This pallet offers more than efficiency includes complete bias network S-band applications.
Semiconductors Manual 14th edition
Features: Reduces component count considerably simplifies radar system design output power Efficiency Industry standard footprint in/out matched entire bandwidth Lightweight heat sink included advantages LDMOS comparison with Bipolar Higher gain better efficiency Better ruggedness overdrive without risk Improved pulse droop insertion phase Very consistent performance tuning required Improved thermal characteristics, thermal runaway Non-toxic packaging ROHS compliance
Microwave applications bands operation
System L-Band S-Band X-band Commercial Avionics (Distance Measuring Equipment) Transponders Mode Mode Mode TCAS Military Avionics Transponders (Identification, Friend Foe) TACAN (Tactical Navigation) JTIDS MIDS (Joint Tactical Information Distribution System) Marine radar 1030 1090 1215 1215 9300 9500 1030 1090 1215 Frequency 1200 1400 2700 3500 8000 12000
complete list products respective small signal power microwave pages
Semiconductors Manual 14th edition
2.13
Digital broadcasting best
BLF881 BLF888 transistor line-up enables today's most powerful efficient digital broadcast transmitter applications
BLF881 transistor based NXP's LDMOS technology, features output power broadcast transmitter industrial applications. unmatched device, BLF881 used range. excellent ruggedness broadband performance this device makes ideal digital transmitter applications either stand alone driver combination with high-power transistor BLF888. BLF881 also available earless version: BLF881S, enabling even more compact design. BLF888 Also based technology created NXP, BLF888 most powerful LDMOS broadcast transistor date. LDMOS device specifically designed digital broadcast transmitter applications. transistor delivers average power DVB-T signal over full band from MHz. excellent efficiency ruggedness this device makes ideal final stage advanced digital transmitter applications benefits operations achieve highest power levels market Best-in-class ruggedness designed into devices Best broadband efficiency Best-in-class design support Very thermal resistance design unrivalled reliability applications Analogue digital transmitters
frange Device
BLF881(S) BLF888
typ. DVB-T Driver stages
PL(AV)
@VDS
(MHz)
1000 1000
Mode operation
2-TONE DVB-T 2-TONE DVB-T
exciter DVB-T harmonic filter power monitor
final
typ. DVB-T output power
amplifiers
brb339
Semiconductors Manual 14th edition
Product portfolio
product catalog: http://www.nxp.com/rf
products
development Customer qualification samples Release supply
Status 2010 Planned release
Type NEW: diodes BAP64Q BAP70Q
Application Description
Chapter
Quad diodes e.g. discrete attenuators Quad diodes e.g. discrete attenuators
Released Released
3.2.2 3.2.2
NEW: SiGe:C transistors BFU610F generation wideband transistor BFU630F generation wideband transistor BFU660F generation wideband transistor BFU690F generation wideband transistor BFU710F generation wideband transistor BFU730F generation wideband transistor BFU760F generation wideband transistor BFU790F generation wideband transistor NEW: Automotive Qualified Wideband MMIC transistors BGA2002 noise wideband amplifier MMIC BFR94A wideband transistor BFR94AW wideband transistor NEW: SiGe:C MMICs LNA's BGU7005 SiGe:C MMIC, incl matching output LNA, 16.5 BGU7006 SiGe:C MMIC, wafer level chip-scale package (WLCSP) BGU7007 SiGe:C MMIC, incl matching output LNA, BGU7031 SiGe:C tuning BGU7032 SiGe:C tuning BGU7033 SiGe:C tuning NEW: Mosfets BF1215 BF1216 BF1217 BF1218 BF1118 series
2010 2010 2010 2010 2010 2010 2010 2010
3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1
Released Released Released
3.4.1 3.3.1 3.3.1
Released 2010 2011 2010 2010 2010
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
Double mosfet tuning, world class cross modulation performance Double mosfet tuning, world class cross modulation performance Single mosfet tuning, world class cross modulation performance Double mosfet tuning Mosfet switches antenna loop through
Released Released Released Released Released
3.5.2 3.5.2 3.5.2 3.5.2 3.5.2
NEW: Medium power amplifier MMICs BGA7124 Medium power amplifier, P1dB, leadless SOT908 BGA7024 Medium power amplifier, P1dB, leaded SOT89 BGA7127 Medium power amplifier, P1dB, leadless SOT908 BGA7027 Medium power amplifier, P1dB, leaded SOT89 BGA7130 Medium power amplifier, P1dB, leadless SOT908 BGA7133 Medium power amplifier, P1dB, leadless SOT908 NEW: Variable Gain Amplifiers (VGA) BGA7350 Dual VGA, control range BGA7351 Dual control range BGA7202 VGA, BGA7203 BGA7204 VGA, NEW: SiGe:C LNA's wireless infrastructures BGU7051 Noise Amplifier BGU7052 Noise Amplifier BGU7053 Noise Amplifier BGU7054 Noise Amplifier
Released Released Released Released 2011 2011
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
2010 2011 2010 2011 2011
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
2011 2011 2011 2011
3.4.1 3.4.1 3.4.1 3.4.1
Semiconductors Manual 14th edition
Type
Application Description
Status 2010
Planned release
Chapter
NEW: IC's MMICs e.g. satellite, VCO/PLL BGA2800 Satellite gain block BGA2801 Satellite gain block BGA2815 Satellite gain block BGA2816 Satellite gain block BGA2850 Satellite gain block BGA2865 Satellite gain block BGA2866 Satellite gain block TFF1003HN noise generator VSAT applications TFF1007HN noise generator VSAT applications TFF11070HN noise generator general microwave applications TFF11073HN noise generator general microwave applications TFF11077HN noise generator general microwave applications TFF11080HN noise generator general microwave applications TFF11084HN noise generator general microwave applications TFF11088HN noise generator general microwave applications TFF11092HN noise generator general microwave applications TFF11096HN noise generator general microwave applications TFF11101HN noise generator general microwave applications TFF11105HN noise generator general microwave applications TFF11110HN noise generator general microwave applications TFF11115HN noise generator general microwave applications TFF11121HN noise generator general microwave applications TFF11126HN noise generator general microwave applications TFF11139HN noise generator general microwave applications TFF11145HN noise generator general microwave applications TFF11152HN noise generator general microwave applications NEW: CATV modules CGY1041 GHz, gain Push Pull, GaAs HFET SOT115 CGY1043 GHz, gain Push Pull, GaAs HFET SOT115 CGY1049 GHz, gain Push Pull, GaAs HFET SOT115 CGY1032 GHz, gain Push Pull, GaAs HFET SOT115 CGD1046Hi GHz, gain Power Doubler, GaAs HFET SOT115 BGO807CE MHz, forward path optical receiver, SOT115 NEW: High Speed Data Converters ADC1613D series Dual 16-bit 65/80/105/125Msps with serial interface ADC1610S series Single 16-bit 65/80/105/125Msps ADC1415S series Single 14-bit 65/80/105/125Msps with input buffer ADC1413D series Dual 14-bit 65/80/105/125Msps with serial interface ADC1412D series Dual 14-bit 65/80/105/125Msps ADC1410S series Single 14-bit 65/80/105/125Msps ADC1215S series Single 12-bit 65/80/105/125Msps with input buffer ADC1213D series Dual 12-bit 65/80/105/125Msps with serial interface ADC1212D series Dual 12-bit 65/80/105/125Msps ADC1210S series Single 12-bit 65/80/105/125Msps ADC1115S125 Single 11-bit 125Msps with input buffer ADC1113D125 Dual 11-bit 125Msps with serial interface ADC1015S series Single 10-bit 65/80/105/125Msps with input buffer ADC1010S series Single 10-bit 125Msps DAC1408D series Dual 14-bit 650/750 Msps DAC1405D series Dual 14-bit 650/750 Msps DAC1208D series Dual 12-bit 650/750 Msps DAC1205D series Dual 12-bit 650/750 Msps DAC1008D series Dual 10-bit 650/750 Msps DAC1005D series Dual 10-bit 650/750 Msps NEW: Power cellular transistors BLF7G24L(S)-100(G) Power Gen7 LDMOS transistor base station applications BLF7G27L(S)-75P Power Gen7 LDMOS transistor base station applications BLF7G27L(S)-50BN Power LDMOS transistor base station applications BLF7G27L(S)-100 Power Gen7 LDMOS transistor base station applications BLF7G27L(S)-140 Power Gen7 LDMOS transistor base station applications BLF7G22L(S)-250P Power Gen7 LDMOS transistor base station applications BLF7G20L(S)-300P Power Gen7 LDMOS transistor base station applications BLF7G20L(S)-200 Power Gen7 LDMOS transistor base station applications BLF7G20L(S)-250P Power Gen7 LDMOS transistor base station applications BLF6G10L(S)-40BRN Power LDMOS transistor base station applications BLF6G10L(S)-260PRN Power LDMOS transistor base station applications BLF6G07L(S)-260PBM Power LDMOS transistor base station applications NEW: Power Broadcast transistors BLF573 High Voltage Power transistor broadcast/ISM BLF888A(S) High Voltage Power transistor broadcast/ISM NEW: Power Microwave transistors BLS7G2729S-300P Power transistors band BLS6G2933P-200 High voltage Power pallet band BLS7G2731P-200 High voltage Power pallet band
Released Released Released Released Released Released Released Released 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2
2010 2010 2010 2010 2010 Released
3.6.2 3.6.2 3.6.2 3.6.2 3.6.3 3.6.4
Released Released Released Released 2010 Released Released Released 2010 Released Released Released Released Released 2010 Released 2010 Released 2010 Released
3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2
2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010
3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.3 3.7.1.2 3.7.1.2 3.7.1.2 3.7.1.1 3.7.1.1 3.7.1.1
2010 2010
3.7.2.1 3.7.2.1
2010 2010 2010
3.7.3.3 3.7.3.3 3.7.3.3
Semiconductors Manual 14th edition
3.2.1
diodes
Varicap diodes
Varicap selection guide www.nxp.com/varicaps Easy-to-use parametric filters help choose right varicap your design.
choose semiconductors' varicap diodes: Reference designs radio tuning Direct matching process Small tolerances Short leadtimes Complete portfolio covering broad frequency range variety package (including leadless) Reliable volume supply
radio tuning varicap diodes
Type Package Number diodes Configuration (pF) BB145B BB156 BB198 BB199 BB201 BB202^^ BB202LX^^ BB207^ BB208-02^ BB208-03^ SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOD882T SOT23 SOD523 SOD323 14.4 36.5 28.2 28.2 19.9 19.9 (pF) (pF) 17.6 28.5 42.5 33.5 33.5 23.2 23.2 (pF) 2.55 11.8 25.5 25.5 (pF) 27.6 27.6 (pF) 2.95 13.8 29.7 11.2 11.2 29.7 Cd1/ Cd1/ 0.25 0.25 0.35 0.35 0.35 0.35 (MHz)
Including special design radio (CREST-IC:TEF6860). Including special design mobile phone tuner ICs.
Type connection: Single Common Cathode
varicap diodes tuning
Type Package (pF) Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 BB189 Unmatched BB135 SOD323 SOD323 SOD523 SOD523 SOD882T SOD882T SOD523 SOD523 SOD323 1.951 1.951 1.95 1.87 1.89 (pF) 2.04 (pF) 2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.18 Cd1/Cd2 Cd1/Cd2 Cd1/Cd2 0.65 0.65 0.65 0.65 0.75 0.75 0.75 0.75 0.75 (MHz) (pF)
8.45 8.45 8.45 8.45
10.9 10.9 10.9
Bold Highly recommended product
Semiconductors Manual 14th edition
varicap diodes tuning
Type Package (pF) Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40 SOD323 SOD323 SOD323 SOD523 SOD882T SOD523 SOD882T SOD523 SOD882T SOD323 SOD523 SOD882T SOT23 2.48 2.361 2.361 2.36 2.48 2.48 2.57 2.57 (pF) 2.75 2.75 (pF) 2.75 2.89 2.754 2.754 2.75 2.89 2.89 2.92 2.92 1.055 1.055 1.055 Cd1/ 14.5 20.6 13.5 13.5 13.5 20.6 Cd1/ Cd1/ 0.65 0.65 0.75 0.75 (MHz) (pF)
Bold Highly recommended product
3.2.2
diodes
brb407
diode selection guide www.nxp.com/pindiodes Easy-to-use parametric filters help choose right diode your design. choose Semiconductors' diodes: Broad portfolio Unrivalled performance Short leadtimes series inductance insertion loss capacitance
(fF) 10-1 BAP65LX BAP65LX
Freq MHz,
BAP50LX BAP63LX BAP63LX BAP1321LX BAP51LX BAP51LX BAP1321LX BAP142LX BAP142LX BAP64LX BAP70-02
BAP50LX
BAP64LX BAP70-02
Isolation (dB) BAP50LX BAP64LX BAP51LX BAP142LX BAP1321LX BAP63LX
brb408
Freq 1800 MHz, Isolation Insertion Loss Insertion Loss BAP70-20 BAP51LX BAP142LX BAP1321LX BAP63LX BAP70-02 BAP50LX BAP64LX
BAP65LX
BAP65LX
10-2
10-1
Insertion Loss (dB)
Look more graphs showing diode line-up other frequencies site: www.nxp.com/pindiodes
diodes typical switching diodes
Type Package Number diodes Conf (mA) 0.94 1.87 1.95 1.95 1.95 0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17 (pF) 0.61 0.65 0.65 0.34 0.36 (pF) 0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35 (pF) 0.85 (pF) 0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 (pF) 0.32 0.32 0.35
BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W
SOD882T SOD523 SOD323 SOT23 SOT323 SOD882T SOD523 SOD323 SOT323
Semiconductors Manual 14th edition
diodes typical 2.4, switching diodes
Type Package Number diodes Conf (mA) (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.35 0.45 0.25 0.32 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26
BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX
SOD882T SOD523 SOD323 SOT23 SOD882T SOD882T
diodes typical 3.6, switching diodes
Type Package Number diodes Conf (mA) (pF) (pF) 0.22 (pF) 0.55 0.55 0.55 0.55 (pF) 0.17 (pF) 0.35 0.35 0.35 0.35
BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W
SOD882T SOD523 SOD323 SOT323 SOT323 SOT323
diodes typical attenuator/swithcing diodes
Type Package Number diodes Conf (mA) (pF) 0.52 0.48 0.48 0.52 0.52 0.52 0.52 0.52 0.52 (pF) 0.37 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37 (pF) (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35
BAP64Q BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W
SOT753 SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323
diodes typical attenuator diodes
Type Package Number diodes Conf (mA) (pF) 0.45 0.45 0.45 0.45 0.48 (pF) 0.35 0.35 0.35 0.28 0.34 (pF) 0.55 0.55 0.55 (pF) 0.22 0.35 0.19 0.17 (pF) 0.35 0.35 0.35
BAP50-02 SOD523 BAP50-03 SOD323 BAP50-04 SOT23 BAP50-04W SOT323 BAP50-05 SOT23 BAP50-05W SOT323 BAP50LX SOD882T BAP64LX^ SOD882T attenuator switching diode
diodes typical attenuator diodes
Type Package Number diodes Conf (mA) (pF) 0.57 0.57 0.57 (pF) 0.43 0.43 0.43 (pF) (pF) 0.25 0.25 0.25 (pF) 0.25 0.25 0.25
BAP70Q BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM
SOT753 SOD523 SOD323 SOT323 SOT23 SOT363
Single Series
Bold highly recommended product Bold New, highly recommended product Semiconductors Manual 14th edition
Common Cathode Common Anode
3.2.3
Band-switch diodes
choose Semiconductors' bandswitch diodes: Reliable volume supplier Short leadtimes series Inductance Insertion loss capacitance High reverse Isolation
Type BA277 BA591 BA891 BAT18
Package SOD523 SOD323 SOD523 SOT23
(mA)
(mA)
(MHz)
(pF)
(MHz)
Bold Highly recommended product
3.2.4
Schottky diodes
Schottky diode selection guide www.nxp.com/rfschottkydiodes Easy-to-use parametric filters help choose right schottky diode your design.
choose Semiconductors' schottky diodes (Very) diode capacitance (Very) forward voltage Single triple-isolated diode (Ultra very) small package Applications Digital applications: ultra high-speed switching clamping circuits applications: diode ring mixer detector voltage doubler Low-capacitance Schottky diodes
Type BAT17 PMBD353 PMBD354^ 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82 Package SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882 Configuration single dual series dual series single triple isolated single triple isolated single dual series dual dual c.a. triple isolated single max. max. (mA) max. (mV) max. (pF)
Diodes have matched capacitance Semiconductors Manual 14th edition
3.3.1
Bipolar transistors
Wideband transistors
wideband transistor selection guide www.nxp.com/rftransistors Easy-to-use parametric filters help choose right wideband transistor your design.
choose Semiconductors' wideband transistors Broad portfolio generation) Short leadtimes Smallest packages Volume delivery
Wideband transistors fT-IC curve represents Transition Frequency (fT) characteristics function collector current (IC) generations wideband transistors. group transistors having same collector current (IC) similar transition frequencies (fT) represents curve. curve number matches products table, detailing their characteristics.
Wideband transistors line-up frequency
(38) (39) (40) bra510 (41) generation (35) (27) (36) (37) generation (32) generation generation
(GHz)
(26) (25)
(33) (34)
(29)
(31) (19) (20) (14) (21) (15) (16) (11) (10) (22) (23)
(30)
generation (12)
(18)
generation
generation
(mA)
1000
DECRIPTION Type (see Fig.1) collector base emitter emitter Type/X (see Fig.1) collector emitter base emitter Type/XR (see Fig.2) collector emitter base emitter
Figure
Figure
Semiconductors Manual 14th edition
Wideband transistors small signal) power transistors handheld equipment
(MHz) VCEO (max) (typ) (dB) (mA) (MHz) (mA) 2000 1000 2000 1000 1000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000
(max) (mW)
Package
BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81
SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223
(max) (mA)
2000 2100 2000 2000
Polarity
Type
1900 1900 1900
wideband transistors ge
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