May, 2005 S.Hashizume Rev. POWER DEVICES IGBT Diode fundamen
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POWER DEVICES IGBT Variation NIEC's IGBT Modules Ratings Characteristics Power Loss Thermal Design Gate Drive High Side Drive 3-Phase Bridge Inverter Short circuit Over-voltage Protection Snubber Parallel Operation
May, 2005 S.Hashizume Rev.
POWER DEVICES IGBT
Diode fundamental semiconductor. Based diode, switching characteristics Thyristor, Bipolar Transistor, MOSFET, IGBT illustrated.
DIODE
Anode
Cathode
THYRISTOR (SCR)
Anode
Gate Cathode
Thyristor switched pulse gate current. But, cannot turned gate signal.
TRANSISTOR (NPN)
Collector
Base Emitter
vCE(sat)
Transistor turned during period when base current supplied.
POWER DEVICES IGBT
MOSFET (Nch)
Drain
vDS(on)
Gate Source
(=-IS)
MOSFET turned during period when gate voltage applied. Gate current flows only short period turn-on turn-off. Between Drain Source, diode built-in chip, current runs opposite drain current.
IGBT
Collecter
Gate Emitter
vCE(sat)
Equivalent circuit
IGBT, same MOSFET, turned during period when gate voltage applied, gate current flows also only short period turn-on turn-off. However, diode integrated chip. some IGBT Modules, discrete diode assembled package.
VARIATION NIEC's IGBT Modules
PHMB
Single
Example PHMB400B12
PDMB
Example PDMB100B12C
Doubler,
PBMB
Example PBMB100B12C
Single-phase bridge,
PTMB
Example PTMB100B12C
3-phase bridge,
VARIATION NIEC's IGBT Module
PCHMB
Suffix
Example PCHMB100B12
PRHMB(-A), PRFMB PRHMB(-
Suffix
Example PRHMB400B12
PRFMB 600V E-series
Example PVD150-12
Example PVD30-8
Ratings Characteristics
example, ratings characteristics PDMB100B12 discussed here.
MAXIMUN RATINGS Tc=25 Item Collector-Emitter Voltage Gate-Emitter Voltage Symbol VCES VGES Rated Value 1200 Unit
excessive stress over these ratings immediately damage device, degrade reliability. Designers should always follow these ratings.
Maximum collector-emitter voltage with gate-emitter shorted
Maximum gate-emitter voltage with collector-emitter shorted
Collector Current
Collector Power Dissipation
Maximum pulse collector current Maximum power dissipation IGBT element. This module (PDMB100B12) IGBT elements, this value effective each elements.
Junction Temperature Storage Temperature Tstg
Chip temperature range during continuous operation Storage transportation temperature range with electrical load
Ratings Characteristics
Isolation Voltage (Terminal Base, 1minute)
VISO Ftor
2,500 (30.6) (20.4)
(kgf
Mounting Torque
Module Base Heatsink Busbar Main Terminal
Maximum voltage between terminal base, with terminals shorted Maximum mounting torque, using specified screws
ELECTRICAL CHARACTERISTICS Tc=25 (Per IGBT Characteristics Collector-Emitter Cut-off Current Gate-Emitter Leakage Current Symbol ICES IGES Test Condition VCE=1200V, VGS=0V VGS=±20V, VCE=0V Min. Typ. Max. Unit
Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage VCE(sat) VGE(th) IC=100A, VGS=15V VCE=5V, IC=100mA
Collector leakage current, with gate-emitter shorted
Gate leakage current, with collector-emitter shorted
100mA 100A
measure IGBT steady-state power dissipation, which refers forward voltage diode, onstate voltage SCR, on-resistance MOSFET.
Gate-emitter voltage when IGBT starts conduct
Ratings Characteristics
Input Capacitance
Cies
VCE=10V, VGE=0V, f=1MHz
8,300
Gate-emitter capacitance, with collector-emitter shorted
Switching Time
Rise Time Turn-on Time Fall Time Turn-off Time
toff
VCE=600V, RL=6, RG=10 VGE=±15V
0.25 0.40 0.25 0.80
0.45 0.70 0.35 1.10
Definition switching times
+15V 600V
PDMB100B12 Maximum
td(on) (0.25µs) 0.45µs 0.70µs td(off) (0.75µs) 0.35µs toff 1.1µs
MAXIMUN RATINGS ELECTRICAL CHARACTERISTICS Tc=25 Forward Current
Maximum pulse forward current built-in diode
Ratings Characteristics
Characteristics Forward Voltage Reverse Recovery Time
Symbol
Test Condition IF=100A, VGE=0V IF=100A, VGE=10V di/dt 200A/µs
Min.
Typ.
Max.
Unit
Forward voltage built-in diode specified current
Required time built-in diode recover reverse blocking state
Reverse Current
Definition reverse recovery time
THERMAL CHARACTERISTICS Characteristics Symbol IGBT Diode
Condition
Min.
Typ.
Max. 0.24 0.42
Unit
Thermal Resistance
Rth(j-c) Junction Case
Thermal resistance each IGBT built-in diode
Measuring point Case temperature Junction temperature
IGBT
0.24/W Case temperature 0.24/W
Diode
0.42/W 0.42/W
Measuring point center metal base plate. Thermo-couple inserted into hole diameter depth. define Rth(j-c), measured metal base plate just below IGBT diode chip.
Contact thermal resistance Heatsink temperature Heatsink thermal resistance Ambient temperature
Power Loss Thermal design
Power loss IGBT consists steady-state (conduction) loss switching loss. And, switching loss turn-on loss (Eon) turn-off loss (Eoff) Also, that's builtin diode steady state switching (ERR reverse recovery). calculate average loss multiplying EON, EOFF, times switching frequency.
IGBT Losses
Collector current
Collector-Emitter Voltage VCE(sat)
Turn-on
Steady State
Turn-off EOFF
Collector Loss
Reverse Recovery Loss
Current Voltage
Reverse Recovery Loss
Power Loss Thermal Design
Measuring switching characteristics
+15V
time
PDMB100B12 Typical Tun-on
Turn-On 100A/1.2kV/SPT VCC=600V, IC=100A, RG=10, VGE=±15V, TC=125
5.4x10 5.6x10
5.8x10
6x10
6.2x10
Time
0.02 1.0x10
0.015 0.01 0.005
7.5x10 5.0x10 2.5x10 0.0x10
5.4x10
5.6x10
5.8x10
6x10
6.2x10
PDMB100B12 Typical Tun-off EOFF
Time
Turn-Off 100A /1.2kV /SPT VCC=600V, IC=100A, RG=10, VGE=±15V, TC=125
-2x10 -1x10
1x10
0x10
2x10
3x10
4x10
5x10
Time
0.02 1.0x10
0.015 0.01 0.005
7.5x10 5.0x10 2.5x10
EOFF
-2x10
-1x10
0x10
1x10
2x10
3x10
4x10
5x10
Time
Power Loss Thermal Design
1200V B-series Turn-on Loss
Find (gate series resistance) Datasheet. VCC=600V Tj=125 VGE=±15V Half Bridge
1200V B-series Turn-off Loss EOFF
Find (gate series resistance) Datasheet. VCC=600V Tj=125 VGE=±15V Half Bridge
Power Loss Thermal Design
1200V B-series Dependence
VCC=600V IC=Rated Tj=125 VGE=±15V Half Bridge
1200V B-series Dependence EOFF
VCC=600V IC=Rated Tj=125 VGE=±15V Half Bridge
Power Loss Thermal Design
1200V B-series Diode Reverse Recovery Loss
Find (gate series resistance) Datasheet. VCC=600V Tj=125 VGE=±15V Half Bridge
1200V B-series Dependence
VCC=600V IC=Rated Tj=125 VGE=±15V Half Bridge
Power Loss Thermal Design
Losses IGBT Module
IGBT Steady-State Loss Switching LossesTurn-on Loss EON, Turn-off Loss (EOFF Steady-State Loss Switching (Reverse Recovery) Loss
IGBT
Calculation Average Loss Chopper circuit
IGBT IGBT
example average loss calculation Steady-state Loss Turn-on Loss Turn-off Loss IGBT Loss total 350(W) Steady-state Loss Switching (Reverse Recovery) Loss Loss total 132.5(W)
Module Loss 482.5(W) Collector-Emitter saturation voltage Ic=100A, TJ=125 Forward voltage IF=100A, TJ=125
Dissipation Thermal Design
Calculations follow condition previous page.
Junction Case Temperature Rise
IGBT
Rth(j-c)=0.24/W Rth(j-c)=0.42/W
Temperature Difference between
IGBT 55.65
Case temperature
Case Fin, Case Ambient Temperature Rise
Contact thermal resistance Rth(c-f) thermal resistance Rth(f-a)
Case temperature
temperature
Ambient temperature
Temperature difference between between TcTf TfTa
Dissipation Thermal Design
Loss Temperature Rise 3-phase Inverter
cannot easily estimate losses applications which have sophisticated operating waveform, such inverter. these cases, recommend directly measure losses, using DSO. (Digital Storage Oscilloscope) which features computerized operation. (For example, Tektronix introduces TDSPWR3 software analyze complicated losses.) choice heatsink, example evaluate losses shown below. EXAMPLE PTMB75B12C, Inverter output current (IOP) 75A, Control Factor Switching frequency 15kHz, Power factor 0.85
IGBT
IGBT
IGBT
IGBT
IGBT
IGBT
Let's review losses IGBT module. Losses IGBT steady-state (conduction) loss Psat, turn-on loss PON, turn-off loss POFF. And, losses steady-state loss reverse recovery loss PRR. Psat
sin(
VCE(sat)
Given IOP75A, VCE(sat) 2.2V (125), cos0.85, Psat35.5(W)
(-IOP sin(
1.8V @75A125; PF=4.7W Referring datasheet, know turn-on loss, turn-off loss, reverse recovery loss pulse 7.5mJ7mJand 6mJ, respectively. Multiplying frequency (15kHz) after have average losses. EON35.8(W)EOFF33.4(W)ERR28.6(W)
Dissipation Thermal Design
Loss Temperature Rise 3-phase Inverter (Continued)
Loss IGBT
Average Loss IGBT 104.7W Average Loss 33.3W
(Psat+PON+POFF)
(PF+PRR)
Loss each element
Total Loss 828W
Temperature Rise each element
IGBT
Rth(j-c)=0.3/W T(j-c)31.4
Rth(j-c)=0.6/W T(j-c)20.0
Dissipation Thermal Design
Junction Case Transient Temperature Rise
previous page, temperature rise average (steady-state) value. Using transient thermal resistance, calculate peak temperature, when necessary.
T(j-c) rth(t) transient thermal resistance time
Check which highest temperature among IGBT elements, consider transient temperature variation over average temperature.
Gate Drive
Rated (Maximum) Gate Drive Voltage
Gate Emitter Gate voltage range should within ±20V Exceeding this rating destroy gate-emitter oxide SiO2, degrade reliability IGBT.
SiO2
Zener Diode (18V absorb surge voltage Collector
On-Gate Drive Voltage
IC=100A (VCE=600V) VCE(on) (600V) (60,000W) 2.25V 225W 2.05V 205W 1.95V 195W
Lower gate voltages, such 10V, cause increase collector loss. Lower voltage cannot lead IGBT on-state, collectoremitter voltage maintains near supply voltage. Once such voltage applied gate, IGBT possibly destroyed excessive loss.
Standard Gate Drive Voltage +15V.
Reverse Gate Bias Voltage during Off-period
avoid miss-firing, apply reverse gate bias (-5V) -15V during off-period.
(-5V) -15V Standard -15V
Gate Drive
Dependence on-gate voltage off-gate bias switching speed noise
Increase on-gate voltage (+VGE) results faster turn-on, turn-on loss becomes lower. follows additional switching noise. matter course, higher off-gate voltage (VGE) causes higher turn-off speed lower turnoff loss. expected, follows higher turn-off surge voltage switching noise. +VGE, -VGE major factors which significantly affect switching speed IGBT.
Effect gate resistance switching
Gate Capacitance
Gate Emitter
Collector
Gate
Emitter Input Capacitance Cies Reverse Transfer Capacitance Cres Output Capacitance Coes
Collector
Gate Drive
Gate Reverse Bias Voltage Gate-Emitter Resistance
Displacement current
+15V
High dv/dt
Bypass resistance larger
Displacement current flows high dv/dt, gate voltage rises.
Inrush current reverse recovery high dv/dt
Reverse gate bias bypass resistance surpress inrush current accompanied loss.
Gate Wiring
free from harmful oscillation, sure confirm following points.
Minimize loop area
Twist
*Set gate wiring possible from power wiring, parallel crossing inevitable, cross right angles. bundle gate wiring pairs. *Additional common mode inductor ferrite bead gate wiring sometimes effective.
Gate Drive
Using Gate Charge estimete Drive Current Power
CGE+CGC
Gate Drive Dissipation Peak Gate Drive Current +VGE=15V-VGE=-15Vf=10kHz
690nC
0.207
Assuming turn-on time 500ns
High Side Drive
High Side Side
IGBT driven referred emitter voltage. During switching operation, emitter voltage high side IGBT swings from voltage required gate drive voltage high side IGBT AC200V circuit high 300V (bus voltage) plus 15V, 315V. Consequently, need high side drive circuit influenced switching operation.
High Side Side LOAD
High Side Emitter Voltage
High Side Gate Voltage
plus
Optocoupler high voltage driver usable solution these days.
High Side Drive Using Optocoupler
+VGE
-VGE
high power applications, optocoupler utilized isolation, and, discrete buffer added output stage. medium less power applications, hybrid integrated package illustrated left popular choice.
high common mode rejection (CMR) type. minimize dead time decrease IGBT loss, with shortest transfer delay times, tPLH tPHL. tPLH tPHL differences delay time output changes from referred input, respectively. Major suppliers Toshiba, Agilent Technologies, Sharp, NEC, etc. Application note Agilent Technologies indicates that optocoupler recommended 200VAC motor driver 30kW less (600V IGBT), 400VAC driver 15kW less (1,200V IGBT). higher power applications, discrete optocoupler plus buffer used gate driver.)
High Side Drive
High Side Drive using Driver
Bootstrap diode Bootstrap capacitor
Available line-ups are; High side Half bridge High 3-phase bridge Many have rating 600V, while some have 1200V.
Bootstrap diode should fast recovery type, VRRM should same VCES IGBT. bootstrap capacitor, high frequency capacitor, such film ceramic, parallel. Reduce line impedance small possible.
Optocoupler Driver
Comparison between follows.
Optocoupler Application Technique Structure AC400V line Typical current Dead time Assembly area Protection Inverter output Improvements 10mA More than Large Built-in some Relatively easy Hybrid
Driver Relatively easy Monolithic Tough Less than Less than available Small Plus current sensing Especially useful 3phase 2.23.7kW
Drive capability, Protection, Noise margin, Less difference characteristics, Integrated current-sensing,
3-Phase Inverter
3-phase Induction Motor Driver Output Timing Chart
Inrush current Protection
Over current sensing DC-DC Converter
X,Y,Z
Gate Driver
Protection
Logic
3-Phase Inverter
line Voltage Corresponding IGBT Rated VCES
Line Voltage IGBT VCES 200240V 600V 400480V 1200V 575, 690V 1700V
Motor Output IGBT Rated (3-phase bridge
IAC=P Motor Drive Current (ARMS) 3-phase Motor Output Rated Voltage (VRMS) Power Factor Efficiency Assuming power factor 0.8, efficiency 70%, IAC=P (0.970VAC)
Temperature Derating Derating short period overload Derating distortion output current Derating line voltage fluctuation
AC200V applications AC400V applications 3-phase Motor Output 3.7kW 5.5kW 7.5kW 15kW 30kW 45kW 55kW
0.0138P 0.00688P AC400V 1,200V IGBT (25.5A) (51.0A) 100A (103.5A) 200A (207A) 300A (309.6A) 400A (379.5A) Calculated Value
AC200V 600V IGBT (51.0A) (75.9A) 100A (103.5A) 200A (207A) 400A (414A) 600A (621A)
3-Phase Inverter
example AC200V 3-phase 2.2kW Inverter Circuit
Shown below example study, practical use. referred March, 1999 issue Transistor Gijutsu under approval author, Hajime Choshidani. Original designed 0.75kW output, partially modified 2.2kW output.
TLP620 0.022µF 100p 74HC14
PGH508
0.1µF
PTMB50E6(C)
1ZB18
1ZB18
1ZB18
400WV
1ZB18
1ZB18
1ZB18
0.10.22µF 630V
+15V
Insulated DC-DC Converter
+15V +15V +15V 0.1µ Gate Emitter 0.1µ Gate Emitter 0.1µ Gate Emitter 0.1µ Gate Emitter 0.1µ 0.1µ Gate Emitter
TLP250
0.1µ
100µ
0.1µ
TLP250
74HC04
TLP250
TLP250 TLP250 TLP250
74HC06
3-Phase Inverter
Designing 3-phase Inverter using Driver
Design note apply 600V 3-phase driver IR2137 current sensing IR2171 2.2kW inverter available from International Rectifier (IR). Also, design IRMDAC4 from These very helpful know driver
Noise Filter
Capacitor
IR2137
IGBT Module IR217
Design using driver IR2137 current sensing IR2171 International Rectifier
Short-circuit Over-voltage Protection
Flow protect short-circuit over-voltage Abnormal happens.
happened?
Over-current flows.
Monitor current Where? what? monitor voltage.
Over design criteria?
Shut down IGBT within 10µs (Unless IGBT will failed.
voltage turn-off loss increases over-current
Soft turn-off proper snubber required.
Short Circuit1.2kV/ 100A /SPT VCC=900V, t=10s, TC=125, RG=24, L=50nH
4.8x10
1500 1250 1000
1500 1250 1000
4x10 3.2x10
2.4x10 1.6x10
0x10 5x10 10x10 15x10 20x10
8x10 0x10
-5x10
Time
10µs short circuit operation without additional protectiive devices.
Short-circuit Over-voltage Protection
Causes Sensing short-citcuit current
Causes INVERTER Device Controller failure, Case isolation LOAD Load failure, short-circuit, Ground fault Current Sensors Current Transformer type Shunt Resistor Current Sensing
short-circuit device failure controller failure (Insufficient dead-time)
Short-circuit current series
Short-circuit current ground fault Through path
Short-circuit Over-voltage Protection
Collector-Emitter Surge Voltage during turn-off short-circuit current
Stray inductance
event (load) short-circuit, current large because only limited electrolyte capacitor gain IGBT. Corresponding loss also large, IGBT will fail unless turned-off within 10µs. Simultaneously, followed surge voltage (inductive voltage kick), which product collector-emitter stray inductance -di/dt. Assuming small 0.1µH, voltage reaches high 200V -di/dt 2,000A/µs. reduce -di/dt, IGBT should turned-off slowly. addition soft turn-off, stray inductance should minimized small possible During transition from on-state off-state, collector voltage rises. result, gate charged through reverse transfer capacitance Cgc. Given this situation, collector current increased more more, gate possibly destroyed. recommend addition both bypass resistor zener diode between gate emitter terminals.
Collector Current
-dic/dt
Collector-Emitter Voltage IGBT destroyed voltage spike which exceeds voltage rating.
Short-circuit Over-voltage Protection
Snubber
turn-off, stored energy inductance generates surge voltage, which applied collector-emitter IGBT. snubber capacitor responsible part turn-off energy, snubber circuit suppress over-voltage incidental turn-off loss. matter course, stacked energy capacitor should dissipated properly.
Snubber
Stored energy turn-off 1/2LiC2
LdiC/dt
IGBT
diC/dt
IGBT
Assuming energy transferred 1/2LiC21/2Cse2
iton
Discharge current limiting resistor
Discharge current
IGBT
Charge during turn-off.
Discharge during turn-on.
Short-circuit Over-voltage Protection
Loss Snubber
diC/dt
Snubbers individually connected each IGBT more effective than ones between ground. But, have difficulty that loss large. Loss Lic2 times switching frequency, example, loss 20W, assumed L=0.2µH, ic=100A, f=10kHz. this case, total snubber loss reaches high 120W 3-phase circuit. choice frequency lower, regenerate energy. reduce minimize stray inductance main circuit loop first, will have smaller accordance reduced inductance. inductance wiring), forward recovery voltage dic/dt (stray inductance Cs). Considerations snubber are; *Drive IGBT lower -dic/dt. (Turn-off IGBT slowly.) *Place electrolytic capacitors close IGBT module possible, apply copper bars wiring, laminate them where possible, minimize wiring inductance main circuit *Also, snubber close IGBT module possible, high frequency oriented capacitors, such film capacitors. *Use forward recovery, fast soft reverse recovery diode
Popular Snubbers
Shown lump snubbers (between power buss ground).
Snubber
Snubber2
Snubber3
Short-circuit Over-voltage Protection
Guideline Snubber Capacitance
Snubber1 previous page cuts damping resistor, sometimes oscillations occur power buss. lower power applications. Among types snubbers, will find which generic choice, capacitance lump snubber below. Half capacitance right value when snubber attached each IGBT.
IGBT
0.47µF
100A
200A
300A
400A
1.52µF Snubber Snubber1 Snubber3
3.34.7µF Snubber3
highest power applications, snubbers would enough free from device failure malfunction noise otherwise wiring inductance could minimized using copper bars laminated them.
Discharge Surpressing Snubber (Snubber3)
Assuming stored energy absorbed 1/2LiC21/2Cse2 Thus, Charge must fully discharged before next turn-on, focus time constant discharge below 90%; Rs1/(2.3Cs switching frequency This relationship indicates minimum value addition, excessively small result harmful oscillation turn-on, somewhat larger resistance would preferable. Dissipation P(Rs), independent P(Rs)1/2LiC2
Parallel Operation
Parallel Operation Current Imbalance
introduce high current IGBT modules, which extend 1,200A 600V series, 800A 1,200V series. cover 100kW 3-phase inverters. Consequently, parallel operation IGBT modules important, but, when designing 3-phase inverters, information rules parallel operation possibly useful. show points brief.
Gate Driver IGBT-1
IGBT-2
Current sharing during parallel operation depends both circuit design device characteristics. Oscillations caused gate-emitter wiring inductance LGresistance RGand Cies, will possibly origin device failures result malfunction non-saturation IGBT. Minimal required proportion Accordingly, minimize inductance, should also larger than equal recommended.
(Lc1LE1) (Lc2LE2) VCE(sat)1VCE(sat)2
Turn-on
Steady-state
Turn-off
*Differences wiring inductance lead poor current sharing turn-on turnoff. Collector emitter wiring each IGBT should equal minimal. *Each IGBT needs gate resistor, gate wirings should also equal minimal. Connect emitter wiring auxiliary emitter terminal, main emitter terminal. *Saturation voltage VCE(sat) some other characteristics depend temperature. Obtain smallest possible deference temperature rises among modules.
Parallel Operation
VCE(sat) Rank Parallel Operation
Some current imbalance parallel operation inescapable, handling current module roughly decreased 80%. example, expected total current 300A modules parallel your request, ship VCE(sat) ranked modules larger than 1,200A/600V 800A/1200V applications. Contact further information. your repeat order when repair needed, ship group modules VCE(sat) rank, rank same original.
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