APRIL2008 SYNTHESIZED SIGNAL GENERATOR OFFERS COST, HIGH VALUE
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APRIL2008
SYNTHESIZED SIGNAL GENERATOR OFFERS COST, HIGH VALUE
INSIDE THIS ISSUE: Transmission Lines Ion-Implanted Silicon Wafers Spatial Combining Microwave Noise Radiators
Tutorial-Performance Capabilities Antenna Arrays Technology Report-Recent Component Modeling News Products-Couplers, EMI/EMC, Military Space
Online Edition
JUMP DIRECTLY TABLE CONTENTS JUMP DIRECTLY ADVERTISER INDEX
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Ideas today's engineers: Analog Digital Microwave mm-wave Lightwave
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April2008
Vol.
view this issue page-by-page, click articles columns Table Contents below
ldmos amplifier
cmos silicon
cost synthesizer
Power Amplifier Broadcast Band
Antonio Eguizabal
Characterization Transmission Lines Ion-Implanted CMOS Wafers
Kamaljeet Singh, Deepak Banghar Surendra
Cost Meets High Value Synthesized Signal Generator
Richard Houlihan
tutorial
technology report
Review Performance Capabilities Antenna Arrays
Gary Breed
news feature
High Frequency Applications
Models Design Manufacturing Partnerships
noise array
product coverage
Featured Products
Spatial Combining Multiple Microwave Noise Radiators
Jiri Polivka
design notes
Return Loss, Reflection Coefficient VSWR Regular Columns
Editorial Meetings Events
News Products
Advertiser Index Design Notes
Cover-This month's cover announces HMC-T2000 synthesized signal generator from Hittite Microwave. description this product begins page Artwork provided Hittite Microwave.
April 2008
EDITORIAL
Editorial Director Gary Breed Tel: 608-437-9800 Fax: 608-437-9801 Publisher Scott Spencer Tel: 603-472-8261 Fax: 603-471-0716 Associate Publisher Burkhard Tel: 707-544-9977 Fax: 707-544-9375 Associate Editor Katie Landmark Tel: 608-437-9800 Fax: 608-437-9801 Business Office High Frequency Electronics Colby Court, Suite 7-436 Bedford, 03110 Editorial Production Office High Frequency Electronics Grove Street Mount Horeb,WI 53572 Also Published Online Subscriptions Ackerman Tel: 651-292-0629 Fax: 651-292-1517
Battleground: Providing Content Internet Access
Gary Breed Editorial Director recently attended CTIA Wireless trade show. Featured center entry hall were pavilions different technologies, each under banner "The Road 4G." quite clear that convergence services that will become so-called "4G" wireless being approached from different directions. main factions hoping there first. First, most companies with cell phone origins touting services utilize broadband channels. These most basic these services include subscriptions weather reports, stock quotes, news headlines, etc. "Yellow Pages" type directories tied into navigation more advanced services being offered. companies following this approach using HSDPA 1xEV-DO broadband technologies, which part "3G" family technologies, supporting data transmission Mbps (downlink). Then there approach from computer side business, where future wireless communications seen extending reach Internet handheld portable devices. Their efforts focused display technology, including small-screen protocols Internet content that targeted wireless devices. These broadband access technologies combination WiFi® WiMAXTM, which offer downlink speeds from Mbps tens Mbps. While "phone" part these devices initially existing wireless networks, some providers anticipate converting VoIP (Voice Over Internet Protocol). There plenty overlap between these approaches, what describing more trend than either/or decision. point want make that evolution wireless still underway, that single "winner" likely. None companies involved should have business plan that depends future domination marketplace! have occasionally noted that laws supply demand have been absent from wireless communications arena-that companies have selected services offer based available technology willing development partners, such providers content noted above. Thus, consumers limited choosing from what available, rather than getting what they really want. think that this scenario changing. some point
High Frequency Electronics (USPS 024-316) published monthly Summit Technical Media, LLC, Hawk Dr., Bedford, 03110. Vol. April 2008. Periodicals Postage Paid Manchester, additional mailing offices.
POSTMASTER: Send address corrections High Frequency Electronics, 10621, Bedford, 03110-0621. Subscriptions free qualified technical management personnel involved design, manufacture distribution electronic equipment systems high frequencies. Copyright 2008, Summit Technical Media,
High Frequency Electronics
into future, wireless will achieve performance coverage equivalent today's wireline CATV-based broadband services. With that performance, consumers should able choose appropriate level service. proponents WiMAX quick suggest that their technology best route, since necessary bandwidth. They believe that conduit into Internet best allow consumers full range wireless services. limitation, however, that will take very long time WiMAX achieve coverage anywhere near what "cell phone" industry already achieved. reach beyond urban areas, also need spectrum development unfolds. This piece spectrum services will support, achieving wider coverage advanced broadband services.
able technology, even means supporting what once considered "competing" technology. with competition, each technology business model will tested. Some will work well, some will fail, most will adjusted adapted market preferences develop.
market includes many different types users; single solution will work. battle unfolds, interested observers like will watch with interest. After all, advancing technology, business approaches needs (and budgets) customers makes fascinating story.
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Freq. Range Model (GHz) Small Signal Gain (dB) Noise Figure (dB) Power Output Compression (dBm) Reverse Isolation (dB) Intercept Point 3rd/2nd (dBm) VSWR Max. 0/50C (In/Out) D.C. Typ. (Volts) (mA)
Supremacy Coexistence?
Back concept battleground-I think main battle will near-term, pitting extension current technology against developing technologies. expect both approaches have strong marketplace support, since each distinct advantages certain areas. best long-term solution, from consumers' perspective, three types systems final mix. Then there choice from basic phone services (plus enhancements), mid-level bandwidth with attractive cost/performance ratio, full-bandwidth, full-feature service business advanced personal wireless users. Already, seeing major wireless companies investing both approaches. suppose that's what convergence about- finding best uses avail-
Microwave Standard One-stage High Frequency CougarPakTM.
ACP14012 ACP14016 ACP16012 ACP16021 ACP16025 ACP18012 ACP18015 ACP20015
6.0-14.0 10.5 6.0-14.0 11.2 6.0-16.0 8.0-16.0 8.0-16.0 8.0-18.0 8.0-18.0 2.0-20.0 10.0
+14.5 +16.0 +15.2 +24.0 +29.0 +15.0 +15.5 +16.0
26/45 26/35 27/40 30/45 42/65 25/38 23/31 26/29
2.0/1.7 2.0/1.6
Specifications typical. individual data sheets details.
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MEETINGS EVENTS
CONFERENCES
April 21-24, 2008 2008 International Conference Microwave Millimeter Wave Technology Nanjing, China Information: Conference site http://www.icmmt2008.org April 23-25, 2008 Czech Slovak Microwave Radioelectronics Week 2008 Olympik Hotel Prague, Czech Republic Exhibition includes: 14th Conference Microwave Techniques (COMITE) 2008, 18th International Conference RADIOELEKTRONIKA 2008 Information: Exhibition site http://www.radioelektronika.cz April 24-26, 2008 2008-Wireless Telecommunications Symposium Pomona, Information: Conference site http://www.csupomona.edu/~wtsi April 28-30, 2008 2008 IEEE Sarnoff Symposium Princeton, Information: Conference site http://www.sarnoffsymposium.org 19-23, 2008 IEEE International Conference Communications (ICC 2008) Beijing, China Information: Conference site http://www.ieee-icc.org/2008 27-30, 2008 ECTC 2008-Electronic Components Technology Conference Lake Buena Vista, Information: Conference site http://www.ectc.net June 1-4, 2008 2008 IEEE International Interconnect Technology Conference Burlingame, Information: Conference site http://www.his.com/~iitc June 3-5, 2008 ICCE-Integration Commercialization Micro Nanosystems International Conference Exhibition Hong Kong, China Information: Conference site
June 15-20, 2008 2008 IEEE MTT-S International Microwave Symposium Atlanta, Information: Conference site http://www.ims2008.org September 10-12, 2008 IEEE 2008 International Conference Ultra-Wideband Hannover, Germany Information: Conference site http://www.icuwb2008.org September October 2008 34th HYPER Europe 2008 Paris-Nord Villepinte, France Information: Conference site October 27-30, 2008 ISAP 2008-International Symposium Antennas Propagation Taipei, Taiwan Information: Conference site http://www.isap08.org
SHORT COURSES
Besser Associates Antonio Circle, Suite Mountain View, 94040 Tel: 650-949-3300 Fax: 650-949-4400 E-mail: info@besserassociates.com http://www.besserassociates.com Modern Digital Modulation Techniques 12-16, 2008, Burlington, Transceiver Architecture, Design Evaluation 12-16, 2008, Burlington, Short Range Wireless Networks 12-15, 2008, Burlington, Advanced Wireless Microwave Techniques 12-16, 2008, Burlington, Advanced Power Amplifier Techniques 12-15, 2008, Burlington, Applied Design Wireless Digital Modulation Systems 12-14, 2008, Burlington, Production Testing Devices 12-16, 2008, Burlington, Applied Techniques Modern Radio Design 12-16, 2008, Burlington, WiMAX Broadband Wireless Access 14-16, 2008, Burlington, Monolithic Microwave Integrated Circuit Design 14-16, 2008, Burlington, Design, Bench Measurements Troubleshooting Techniques-A Practical Approach 14-16, 2008, Burlington,
High Frequency Electronics
Power measurements have never been mobile
Agilent Technologies, Inc. 2008
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MEETINGS EVENTS
Computer Simulation Technology announces series customer centric workshops focusing high frequency system design challenges. series investigates technology will benefit designers working high speed data, power integrity EMC/EMI areas, well optical applications. offers advanced workflows cover major aspects electromagnetic system design optimization this technology will explained through series partner customer presentations. Presenting partners include, Verigy, Cisco, Agilent, Finisar Continental Automotive. Design Challenges: RF/SI Simulation 2008, Santa Rosa, Design Challenges: SI-PI Simulation 2008, Santa Clara, Design Challenges: Optical Simulations with June 2008, University Twente Enschede, Netherlands Design Challenges: SI-PI Simulation August 2008, Detroit, June 11-13, Boston, Sept. 17-19, Syracuse, Nov. 12-14, Philadelphia, Microwave Receiver Design April 14-17, Baltimore, June 16-19, Boston, Sept. 22-25, Syracuse, Nov. 17-20, Philadelphia, Power Amplifiers, Classes A-S: Circuits Operate, Design Them, When Each April 29-30, Baltimore, June 23-24, Boston, Sept. 15-16, Syracuse, Nov. 24-25, Philadelphia,
CALLS
PAPERS
Northeast Consortium Engineering Education Port Royal Square Port Royal, 22535-0068 Tel: 804-742-5611; Fax: 804-742-5030 E-mail: ed-pub@crosslink.com http://www.antennacourse.com ANTENNAS: Principles, Design, Measurements 12-15, 2008 Annapolis,
University Wisconsin-Madison Department Engineering Professional Development Lake Madison, 53706 Tel: 800-462-0876 Fax: 608-263-3160 E-mail: danbeck@engr.wisc.edu http://epd.engr.wisc.edu Understanding Troubleshooting VoIP Networks April 28-29, 2008, Madison, Understanding Troubleshooting Videoconferencing Networks 1-2, 2008, Madison, Introduction Data Communications June 10-12, 2008, Madison,
2008 IEEE Compound Semiconductor Symposium Monterey, Conference Dates: October 12-15, 2008 Abstract Deadline: 2008 Topics: Innovative RFIC device circuit concepts; millimeter-wave/high-speed CMOS circuit design fabrication; manufacturing technology cost issues; CAD/CAM/CAT tools techniques; testing methodology; packaging technology; reliability; advanced device applications; system applications (e.g., wireless, broadband, military); optoelectronic OEIC applications. Information: Authors must submit abstract results previously published already accepted another conference. Abstracts must submitted electronically using www.csics.org page. only accepted file format PDF. site full submission information.
R.A. Wood Associates 1001 Broad St., Suite Utica, 13501 Tel: 315-735-4217 http://www.rawood.com Introductory Microwaves April 9-11, 2008, Baltimore,
58th Annual IEEE Broadcast Symposium Alexandria, Conference Dates: October 15-17, 2008 Abstract Deadline: 2008 Topics: Topics sought include technical issues associated with termination analog television broadcasting; repurposing analog television broadcast transmitters; digital radio television systems; streaming, IPTV, VoIP, VoD, mobile wireless multimedia; wireless broadband networks; transmission, propagation, reception, re-distribution broadcast signals. Information: Abstracts must more than words submitted email bts@ieee.org. Include author's name contact information. details visit symposium site: www.ieee.org/bts/symposium.
High Frequency Electronics
Directional/Bi-Directional
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RF/IF MICROWAVE COMPONENTS
NEWS Business News
TRAK Microwave, Smiths Interconnect business, University South Florida, College Electrical Engineering, have jointly full matching grant from Florida High Technology Corridor program grant sponsors research programs aimed "Measuring Modeling Phase Noise Conversion Amplifiers Frequency Multipliers." ANSYS, Inc., global innovator simulation software technologies designed optimize product development processes, Ansoft Corporation, global provider Electronic Design Automation (EDA) software, announced today that they signed definitive agreement whereby ANSYS will acquire Ansoft purchase price approximately $832 million cash ANSYS common stock. When completed, ANSYS currently anticipates that transaction will modestly accretive non-GAAP earnings share first full year combined operations. TriQuint Semiconductor® Communications, Inc. announced definitive agreement TriQuint acquire Under terms agreement, TriQuint will acquire merger outstanding shares $1.00 share, implying purchase price approximately million. nGimat received Small Business Innovation Research (SBIR) Phase award from Navy prototype cost, miniaturized tunable filter X-band active electronically steered antenna (AESA) array based radar systems. This two-year contract with funding $750,000. Orolia, precision electronics technology group specialized high-precision time frequency generation distribution, announced acquisition Pendulum Instruments. This acquisition extends technical competencies market reach Orolia third area expertise: measurement high-precision time frequency signals. This acquisition also allows Group expand geographical presence fast-growing economies Eastern Europe, Russia, China. MIPS Technologies, Inc. announced that Altair Semiconductor integrated MIPS® processor analog ALT2150 mobile WiMAX baseband processor. ALT2150 first baseband processor optimized handheld devices, combining ultra-low power consumption, cost smallest footprint. Agilent Technologies Inc. announced that Finisar, leader fiber optic solutions high-speed networks, selected Agilent's Advanced Design System (ADS) software support development their optics products designed telecom market. Agilent's software platform includes Signal Integrity Design Suite Ptolemy system simulator. WiMAX Forum announced projects more than million WiMAX users globally 2012. forecast based results independently commissioned research study published April 2008. Additional data from study estimates that approximately percent forecasted WiMAX users 2012 will utilize mobile portable WiMAX devices access broadband Internet services. Electronics announced purchased Government Solutions subsidiary Paragon Dynamics, Inc. (PDI) from Zanett, Inc. cash. Pagemill Partners served exclusive financial advisor Electronics. Eubus GMBH, Munich GIGACOMP signed distributor agreement Central Europe. GIGACOMP GmbH responsible support distribution Eubus products Germany Austria GIGACOMP Switzerland. Eubus develops produces components like reactive power divider/combiner, switches programmable attenuators well systems like network attenuator modules (NAMs) hand-over cuppling units (HCU). Ethertronics Inc. announced company shipped more than million Isolated Magnetic Dipole(IMD) antennas. Quik-Pak, division Delphon Industries, announced that strict requirements compliance been awarded 9001:2000 certification packaging, assembly prototyping services. TouchMark, another division Delphon Industries, announced that strict requirements compliance been awarded 9001:2000 certification precision printing services. Hittite Microwave Corporation announced launch newly redesigned website www.hittite.com. Many features have been added including: page designs, dynamic homepage, individual product splash pages, plus e-comm sample request systems. Elcom Technologies, Inc. announced receipt contract Million from major United States aerospace defense military contractor, high performance based synthesized source synthesized broadband downconverter. Elcom initially selected ability integrate synthesizer tuner package. This recurring contract will require support through 2009. subsidiary Isola, Polyclad Laminates Inc, recently completed license agreements with Suzhou Fukuda Metal (PRC) Chang Yung Technology Corp. (ROC) Isola's patented Drum Side Treated Foil (DSTF®) technology. DSTF enabling technology dense circuit formation high-speed signal transmission.
High Frequency Electronics
±0.3dB Accurate Power Measurement 2.7GHz
Exceptional Accuracy over Temperature from 40MHz 2.7GHz, with Fast Settling Ripple
®5570 provides fast, accurate power measurements high crest-factor modulated signals. >50dB dynamic range meets most demanding requirements cellular basestations, WiMAX wireless infrastructure equipment. industry-leading accuracy performance over temperature simplifies design calibration procedures.
Power Detector Family
Part LT5570 LT5534 LT5537 LTC®5505 LTC5507 LTC5508 LTC5532 Frequency Range 40MHz 2.7GHz 50MHz 2.7GHz 5MHz 1GHz 300MHz 3.5GHz 100kHz 1GHz 600MHz 7GHz 600MHz 11GHz Dynamic Range 60dB 60dB Detector
VOUT
Output Voltage, Linearity Error Input Power
2140MHz 85°C 25°C -40°C Input Power (dBm) Linearity Error (dB)
Info Free Samples
www.linear.com/5570 1-800-4-LINEAR
90dB Detector 46dB Peak 46dB Peak 44dB Peak 42dB Peak
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LTC, Lare registered trademarks Linear Technology Corporation. other trademarks property their respective owners.
NEWS
Flex Interconnect Technologies (FIT), leader design, manufacture assembly flexible printed circuits, announced that Quality Management System certified AS9100 revision standards. AS9100 revision standard developed International Aerospace Quality Group (IAQC). Kyocera Corporation Kyoto, Japan, transferred Kyocera America, Inc. assumed responsibilities Vice President, Asia Ceramic Products Sales. role, Aonuma will responsible North American sales ceramic-based semiconductor package products made Kyocera business units Asia. Aonuma joined Kyocera 1979 held sales management positions both Japan United States, including years prior service with Kyocera America, Inc. RF/Microwave Instrumentation expanded staff Microwave Design Specialists with addition Osthaus, brings years microelectronics experience company. Osthaus began career designer with Microcom Corp. later worked process engineering variety technology companies. Prior joining with Merrimac Industries, where established full-service microelectronic prototype facility. announced addition frequency control guru Craig Taylor strengthen their business application development efforts. Craig will bring over years successful technical marketing experience NDK's customers. will working directly with OEMs their next generation products. nature quartz based frequency control components carry longest lead times develop. utilizing depth engineering experience, including time lab, Craig will work with customers gain understanding their industry's future requirements. SRCTec, Inc. announces promotion David Bessey Vice President, Business Development. this role, Bessey responsible managing providing technical leadership business development opportunities SRCTec, which include radar, electronic warfare, integrated logistics services. also responsible product market development will continue direct proposal efforts. Bessey served SRCTec's Business Development Director since inception 2006. SRCTec, Inc. also announces promotion Drew James Vice President, Operations. this role, James will responsible managing aspects SRCTec's Operations, including Program Management, Manufacturing, Quality Assurance, Integrated Logistics Support organizations. James more than years experience managing development production complex tactical systems sensors U.S. Department Defense.
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Wenjing Lou, assistant professor electrical computer engineering Worcester Polytechnic Institute (WPI) received five-year, $450,000 CAREER Award from National Science Foundation. Lou's research focuses wireless networks their security. CAREER Award will enable conduct comprehensive study relatively concept wireless networking, that takes better advantage broadcast nature wireless communications. research find ways increase efficiency, throughput, reliability wireless networks develop computer models protocols that will enable designers create more effective wireless technology. Nordic Semiconductor announces that Darren O'Donnell been appointed Director Sales, Americas. While Nordic operated local Jose, CA-based operation over year, this first director-level appointment specifically Americas. O'Donnell will lead Nordic's existing sales field applications engineers together with company's US-based distributors, Symmetry Electronics, Horizons; technical sales engineering representative Cubed. O'Donnell over decades experience global electronics industry. Previous roles include senior positions manufacturing distribution companies. Northrop Grumman Corporation employees, Clayton K.S. Aaron Oki, received awards their contributions science, engineering, their communities 2008 Asian American Engineer Year (AAEOY) awards. vice president general manager Space Defense Products Division, technical fellow deputy director microelectronics. Both work company's Space Technology sector. Kyocera America, Inc. announced executive-level promotions effective April 2008. Gary been promoted Vice President, Organic Product Sales. will responsible expanding Kyocera's North American business semiconductor package products based organic plastic material technologies. joined Kyocera January 2000 more than years experience microelectronics, including management positions sales manufacturing. Kenji Aonuma, previously General Manager, International Sales Division, Semiconductor Components Group,
High Frequency Electronics
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RF/IF MICROWAVE COMPONENTS
HIGH FREQUENCY APPLICATIONS
Watt Broadband Amplifier Achieves 6000 Bandwidth
Aethercomm (www.aethercomm.com) announced high power amplifier that produces approximately watts power from single module (Model Number: SSPA 0.020-6.000-10). This amplifier design product Aethercomm's internal group, working closely with gallium nitride (GaN) device vendors develop designs packaging these types broadband amplifiers. This ideal broadband military platforms well commercial applications, with robust perfromance high power over extremely large bandwidth with very good power added efficiency. This amplifier designed broadband jamming communication system platforms. operates with maximum base plate temperature packaged modular housing that 2.50" 6.40" 1.06". amplifier typical saturated output power 5-10 watts room temperature, with noise figure typical. offers typical gain Power gain flatness across band extremely flat bandwidth. Input output VSWR 2.0:1 typical. Class quiescent current approximately 1.17 amps employing supply. Design techniques developed this wide bandwidth include selection chokes (RFC) blocks (DCB) without in-band resonances while still remaining loss.
Antenna Modeling System Includes Scripting Feature Design Complex Antenna Systems
Agilent Technologies Inc. (www.agilent.com) announced availability latest Antenna Modeling Design System (AMDS) release. full-wave electromagnetic (EM) modeling simulation software contains scripting feature performance optimization automation complex designs such patch array antennas, allowing designers fine tune antennas best performance within electronic devices, such handheld wireless cell phones. Modeling, simulating optimizing complex antenna systems intricate process that includes setting layout simulation parameters, along with mathematical post-processing simulation results. scripting capability this fifth release AMDS allows designers write their programs automate element placement, including equations that define geometry complex antennas, such those with fractal conformal surfaces. AMDS full-wave, design, modeling verification tool dedicated antenna antenna systems design. meshes, simulates optimizes entire wireless device, together with surrounding real-world environment, analyze compliance standards such HAC, (Specific Absorption Rate), antenna diversity MIMO (Multiple-Input, Multiple Output).
Analog Noise-Suppression Technology Requires One-Tenth Power Solutions
microphone array amplifier from National Semiconductor Corp. (www.national.com) reduces background noise delivers more natural-sounding voice quality. Incorporating farfield noise suppression technology, voice quality improved eliminating output frequency distortions other audio artifacts common with digital signal processor (DSP) microprocessor software-based systems that sub-band frequency processing algorithms implement noise suppression. PowerWise LMV1088 dual-input microphone array amplifier that consumes just less that one-tenth that comparable microprocessor software-based systems. LMV1088 dramatically improves talker's voice-signal-to-backgroundnoise ratio communications system while retaining natural speech quality. improvement directly translates clearer voice signals receiving communications link. Additionally, improvement allows increased accuracy voice recognition systems since background noise significant part signal discriminate against.
High Frequency Electronics
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High Frequency Design
LDMOS AMPLIFIER
Power Amplifier Broadcast Band
Antonio Eguizabal Freescale Semiconductor intention this article present watt singleended power amplifier broadcast band, used small medium radio stations which economy flexibility important user. With recent availability cost overmolded plastic LDMOS power amplifier transistors, such Freescale family MRF6VXXXXN devices, possible design build cost, compact, broadband power amplifier offering simplicity reliability. this article, power amplifier using cost Freescale MRF6V2300N LDMOS transistor presented (photo Figure operates with average drain efficiency excess gain with gain flatness over band. tuning required amplifier broadband. This makes very attractive Class stations with HAAT such that coverage
This article describes band power amplifier, including circuit design, thermal considerations, construction notes performance measurements
Figure Assembled test fixture (top view).
area minimum field strength dBµV 3.16 mV/m [2].
Introduction
Freescale MRF6V2300N LDMOS transistor TO272 plastic package featuring 25.5 gain efficiency MHz, operating Class with power supply [3]. capable handling 10:1 VSWR oper-
Acronyms Abbreviations
Class Station: defined FCC, minimum Class AB2: Operation power amplifier that biased between Class which requires input power conduction angle between radians. ACPR: Adjacent Channel Power Ratio Continuous Wave, i.e. modulation dBµV: Decibels referred µV/m ERP: Effective Radiated Power FCC: Federal Communications Commission, telecommunications regulatory agency. Frequency Modulation HAAT: Height Above Average Terrain IRL: Input Return Loss LDMOS: Lateral Diffused Metal Oxide Semiconductor OFDM: Orthogonal Frequency Division Multiplex OMP: Over Molded Plastic, i.e., epoxy package Printed circuit P1dB: power level gain compression VSWR: Voltage Standing Wave Ratio
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High Frequency Design
LDMOS AMPLIFIER
Figure Impedance measurements, Zsource
Figure Impedance measurements, Zload
ating with Integral protection gate circuit makes safe handle production floor. Because device internally matched, external matching components required bring input output impedance level standard value ohms connectors. Operation band requires broadband matching both input output. This usually accomplished with combination lumped elements lengths microstrip transmission line. result compact design standard board material.
Design Objectives
following partial list desired features: Power amplifier device: MRF6V2300N LDMOS transistor Single ended design supply Class operation, P1dB across band Gain across band Efficiency across band input output impedances test fixture connectors Must into standard Freescale test fixture board space Must compatible with standard hardware, heat sink, heat spreader, mounting plates type connectors.
used since input impedance device low, shown Smith chart Figure input section wide microstrip. Also, five-section output matching network used increase device output impedance 50-ohm load. high currents involved, wide microstrip favored reduce losses. both cases, microstrip bent around meandering shape into available board space. layout compromise between number impedance discontinuities, associated losses fit. output impedance also low, given Smith chart Figure Please note that these test fixture impedances defined Zsource Zload data sheet measured with probes calibrated network analyzer. After tuning, both networks were implemented printed circuit board using Arlon® CuClad GX-0300 material with 2.55, nominal dielectric thickness thick copper trace. Figure gives board assembly diagram finished power amplifier.
Note Thermal Design
predicted drain efficiency 68%, that input power dissipated heat. Thus using equations Pout/d, where drain efficiency Pdiss Pdc, values 441.18 Pdiss 141.18 These somewhat optimistic used narrow band design provide estimate. slight loss efficiency expected broadband operation. thermal heat sink must carefully considered that case temperature 200°C junction temperature 200°C, otherwise reliability
Design Considerations
order achieve desired broadband performance over MHz, five-section input network
High Frequency Electronics
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High Frequency Design
LDMOS AMPLIFIER
trical contact impedance, small piece TGON-805® material equal footprint transistor placed under device before bolt mounting copper heat spreader.
Results
final fully assembled test fixture shown Figure Note input gate bias decoupling circuit output drain decoupling network. These assure stable amplifier operation prevent fields from reaching gate area. copper heat spreader LDMOS power transistor visible center. Figures show gain, IRL, drain current efficiency under power sweep low, high frequency channels. Figures graphs giving gain, IRL, drain current efficiency under frequency sweep power levels: Intermodulation performance
Figure board layout assembly diagram.
terms MTTF will affected [5]. this design, MRF6V2300N device thermally coupled aluminum pin-fin type UltraCool
heat sink Cool Innovations® through copper plate heat spreader. order minimize source contact thermal impedance elec-
Figure Power sweep, gain MHz, MHz.
Figure Power sweep, drain current efficiency MHz, MHz.
Figure Frequency sweep, gain Pout
High Frequency Electronics
Figure Frequency sweep, drain current efficiency Pout
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High Frequency Design
LDMOS AMPLIFIER
Figure Inter-modulation distortion order (two tone test).
Figure OFDM digital modulation mode, QAM, symbols].
shown Figure Digital modulation performance with back-off under DVB-T OFDM with five symbols given Figure Table summarizes results obtained from test conducted environment with 50-ohm load low, high channels. full output power this design exhibits gain, drain efficiency better than with fairly good over band. Gain compression kept close better. most singleended designs, harmonic level elevated further steps taken with external passive pass filter reduce their level even more, particular harmonic keeping mind insertion loss filter. Figure spectrum plot harmonics while operating MHz. Table summarizes data from tone inter-
modulation test, showing reasonably good performance over band (low, high channels) power level exceeding Table summarizes data from OFDM digital modulation signal mode DVBT, data carrier modulation, symbols) simulating digital band broadcast signal future applications. ACPR measured offset from center frequency. Power level back-off. total parts cost quantity) less than US$480, detailed Table
References
part "Power antenna height requirements," regulations, available from www.fcc.gov. part transmitter location," regulations, available from www.fcc.gov. MRF6V2300N Data Sheet, available from
Table 300W performance data harmonic levels.
Table Two-tone test, 155W tone.
Figure Harmonics MHz.
High Frequency Electronics
Table OFDM test backoff.
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High Frequency Design
LDMOS AMPLIFIER
www.freescale.com/rf Arlon Microwave Materials Div., www.arlon-med.com Freescale MTTF calculator available http://www.freescale.com/rf; select options Tools/ Software/Application Software/Calculators access MTTF calculator. Model 3-505019RX available from www.coolinnovations.com Thermagon Inc. Laird Technologies: www.lairdtech.com. Freescale Application Notes AN1907, "Solder Reflow 88-108 REV3
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Author Information
Antonio Eguizabal Applications Engineer Power Products, Division Freescale Semiconductor Tempe reached e-mail a.eguizabal@freescale.com. Data MRF6V2300N found www.freescale.com.
Description
ohm, Long Ferrite Bead ohm, Short Ferrite Bead 1000 Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Electrolytic Capacitor Tantalum Capacitor Tantalum Capacitor Electrolytic Capacitor Inductor Inductor Turn #18AWG Inductor, 0.185" Turn #18AWG Inductor, 0.090" 18-ohm 2010 Chip Resistor LDMOS Power Transistor Printed Circuit Board Endplates Copper insert Heatsink type female connectors
Part Number
2743021447 2743019447 ATC100B102JT50X ATC100B300JT500X ATC100B330JT500X 180R150JW 500X ATC100B470JT500X ATC100B820JT 500X ATC100B750JT 500X ATC100B510GT500X ATC100B4R7CT500X ATC100B100JT500X ATC100B511JT100X ATC100B241JT200X C1825C225J5RAC ATC200B103KT50X ATC200B203KT50X CDR33BX104AKWS MCRH63V337M13X21RH T491D106K035AS T491X226K035AS 476KXM050M A03T 1812SMS-82NJ Handwound Handwound CRCW201018RFKEA MRF6V2300N DS2313 Machine shop Machine shop UltraCool 3052-1648-10
Manufacturer
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Price Each
$0.13 $0.11 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $1.00 $3.16 $1.50 $1.50 $0.70 $0.34 $0.32 $0.91 $0.07 $0.15 $0.15 $1.00 $1.00 $0.12 $45.00 $66.00 $22.00 $78.00 $177.00 $10.00 Total
Price Total
$0.26 $0.11 $3.00 $1.00 $2.00 $1.00 $1.00 $1.00 $1.00 $2.00 $2.00 $1.00 $2.00 $1.00 $15.80 $3.00 $3.00 $2.10 $0.34 $0.32 $0.91 $0.07 $0.15 $0.15 $1.00 $1.00 $0.24 $45.00 $66.00 $44.00 $78.00 $177.00 $20.00 $476.45
Table Part list cost breakdown MRF6V2300N band power amplifier.
High Frequency Electronics
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High Frequency Design
CMOS SILICON
Characterization Transmission Lines Ion-Implanted CMOS Wafers
Kamaljeet Singh, Surendra Pal, ISRO Satellite Center Deepak Bhanager, University Rajasthan spite rapid technology evolution silicon applications, main technology challenge realize high performance silicon overcome high substrate losses cross-talk associated with CMOS grade silicon. Further, technology advancement demands on-chip integration transformers, baluns, filters, co-integration digital systems single silicon chip. this hampered low-resistivity CMOS grade (typically -cm) wafer, resulting substantial energy losses dielectric attenuation. most common solutions utilize VLSI back-end dielectric layers wafer reduce lossy effects. However, large losses from substrate still unavoidable because limited oxide thickness provided current VLSI technology. stack oxidenitride-oxide been reported having good linearity, absence dispersion behavior leakage. Still, this technique limitation interfacial layer thickness constraint cannot used higher frequencies. Other options employed thicker polyimide selective removal underlying substrate, this increases complexity process intensive steps, along with risk contamination foundry machinery. Even (silicon-on-insulator) shows little improvement substrate losses cross-talk because thicker isolation required performance improvement. This article details simple CMOS grade compatible process develop
This article reports experiments with transmission lines silicon that been modified improve dielectric properties
high-resistivity wafers using ion-implantation with energy dose. process reported literature utilizes proton arsenic implantation energy dose range [3-6]. this article, novel concept poly-silicon deposition over oxide been implemented. This technique, along with controlled dose implantation, gives high resistivity energy levels (KeV range). proton implantation little effect oxide integrity that integrated into VLSI back-end processes. Further, transmission lines have been fabricated both ion-implanted silicon wafer standard alumina substrate. performance ion-implanted wafer shown with standard substrate, thus paving RFCMOS integration.
Resistivity Effects Transmission Lines
Transmission lines great importance design their performance represents issues RF-CMOS integration, especially higher operating frequencies. types modes generally propagate silicon substrate, known slow wave quasi-TEM mode, corresponding lossy silicon substrate lossless (dielectric) silicon substrate. substrate losses depend frequency surface resistivity [7]. higher frequencies, dielectric behavior silicon substrate cannot neglected frequencies approaching exceeding dielectric relaxation (cut-off) frequency defined
High Frequency Electronics
Analog Mixed-Signal ICs, Modules Subsystems
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High Frequency Design
CMOS SILICON
Figure Transmission line. Lumped physical model; Cross-section view line silicon wafer.
Figure Fabricated transmission line ion-implanted wafer
Figure substrate losses represented metallization losses represented shown above. medium resistivity ohm-cm), losses mainly shunt conductance, Gsi. high resistivity, substrate behaves purely capacitive contribution negligible exhibits lowest losses.
Figure Measured output performance with sinusoidal wave. MHz; MHz.
Concept Implantation
concept high resistivity shown cross section view Figure 1(b). This technique makes high resistivity wafer compatible with CMOS process. oxide deposited silicon wafer increase substrate isolation over which implantation poly-silicon been carried out. This technique been used applications authors view still reported elsewhere. resistivity heavily doped poly-Si about times higher than that diffusion doped polySi [Ref. 181-182]. subsequent annealing step redistributes activates implanted dopant.
where resistance capacitance substrate resistivity permittivity substrate respective-
This relation shows effect resistivity frequency. equivalent lumped physical model represented shown
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standard 6-in wafer height, with resistivity used this study. Further oxidation followed poly deposition 5000 been done. Ionimplantation proton (dose 8.0e15 cm-3) been carried out. wafer then annealed
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1000°C redistribute implanted dopants. metallization aluminum carried using E-beam patterned using lift-off have transmission line dimension Backside metallization carried required microstrip configuration. complete topology shown Figure Standard fabrication 50-ohm line also carried alumina mils) substrate having width 0.25 measurement resistivity carried using measurement. characterization been carried using function generator (Tektronix, 310) output measured using oscilloscope (Tektronix, T5540D). structure mounted standard package with leads thermo-bonded output terminals. Multiple leads have been bonded minimize interconnection inductance.
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Results Discussions
resistivity proton-implanted comes around which much higher than standard CMOS grade silicon wafer value ~300. performance transmission line ion-implanted wafer been compared with transmission line fabricated standard alumina substrate. Both sinusoidal well square wave been given different frequencies ranging from MHz. Figure shows measured performance standard alumina substrate different frequencies. output voltage comes range been observed that square wave distorted after inherent property dielectric (Figure same experiment been carried using ionimplanted wafer (Figures output voltage comes around range same phenomena have been observed with square wave. This result shows good agreement with standard alumina dielectric, indicating high resistivity achieved process. high resistivity after ion-implantation implantation-created high defect densities that effectively trap free carriers. trend output voltage variation also shows creation high resistivity wafer.
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Conclusion
Simple ion-implantation methodology been demonstrated circuits applications using standard CMOS foundry process. comparison with standard alumina substrate also been made. results show effectiveness desired process topology changing resistivity. process enables easier integration into current technology paving RF-CMOS become reality single chip. hoped that this development will lead practical high integrity cost topologies.
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Other divisions: rf/microwave instrumentation receiver systems europe Copyright© 2008 orange stripe products Reg. U.S. Pat. Off.
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High Frequency Design
CMOS SILICON
Figure Measured output performance alumina substrate with square wave. MHz; MHz.
Figure Comparison output voltage with frequency.
Figure Measured output performance ion-implanted wafer with sinusoidal wave. MHz; MHz.
Figure Measured output performance ion-implanted wafer with square wave. MHz; MHz.
Microwave Wireless Components Letters, Vol. 429-431, Nov. 2002. K.T. Chan, Albert Chin al., "Low noise power loss Ionimplanted having improved Implantation process," IEEE Electron Device Letters, Vol. 2830, Jan. 2003. Yong-Zhong Xiong al., "Substrate effects Resonant Frequency Silicon-Based onchip capacitor," IEEE Transactions Electrons Devices, Vol. 2839-2845, Nov. 2006 Cellere, M.G. Valentini al., "Different Nature Process -Induced stress-induced defects thin SiO2 Layers," IEEE Electron Device Letters, Vol. 393-395, June 2003. Stanley Wolf Richard Tauber, Silicon Processing VLSI Era. Lattice Press, Sunset Beach, California, 1986.
References
Claus Schollhorn,Weimei Zhao "Attenuation Mechanism aluminum millimeter-wave coplanar waveguides silicon," IEEE Trans. Electron Devices, Vol. 50., 740-746, March 2003. C.H. K.W. Chew, S.F. Chu, "Characterization comparison PECVD silicon nitride silicon Oxynitride dielectric capacitors," IEEE Electron Device Letters, Vol. 506-508, August 2003.
High Frequency Electronics
Yuang Yang, Cheng-Yuan Hung, al., "Loss characteristics silicon substrate with different resistivities," Microwave Optical Technology Letters, Vol. 1773-1776, Sept. 2006. Y.H. Albert Chin al., "Fabrication Very High Resistivity with Low-loss Cross-talk," IEEE Electron Device Letters, Vol. 394-396, Sept. 2000. K.T. Chan, C.Y. Chen al., Coplanar Waveguide Band pass Filters Silicon substrate," IEEE
Author Information
Kamaljeet Singh researcher Surendra scientist deputy director ISRO Satellite Center Bangalore, India. They reached e-mail kamaljs@ sclchd.co.in, pal_surendra@ hotmail.com, respectively. Deepak Bhatnagar affiliated with Microwave Lab, Department Physics, University Rajasthan, Jaipur, India. reached dbhatnagar_2000@rediffmail.com
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Richard Houlihan Hittite Microwave Corporation ignal generation core building block transmit receive architectures. advancement enabled superior system design proliferation radio frequency spectrum, both contributors rapid evolution wireless industry. Test equipment manufacturers have played role this effort creating means which measure evaluate these systems well components from which they built. However, many users resigned using elaborate equipment perform very basic functions with significant portion never using more than fraction unit's capability. Hittite Microwave Corporation proud introduce signal generation product solution, HMC-T2000. Built foundation high performance Hittite MMICs, HMC-T2000 synthesized signal generator that combines essential capabilities with benefits acquisition cost $3998. HMC-T2000 operates over broad frequency range from 8,000 delivers high output power capability dBm. unit also controlled remotely port graphical user interface (GUI) With operating frequency range 8,000 MHz, HMC-T2000 covers major communication bands with frequency resolution fast switching speed steps. HMC-T2000 especially suited frequency testing easily programmed swept fre-
This signal generator offers high quality output level high dBm, fast switching speed remote control port
Figure Front view HMC-T2000 synthesized signal generator.
quency screening. high output power (0.5 resolution) allows user luxury simplifying their test configurations particularly cases where inter-stage buffer amplifiers required. output power conveniently leveled across certain frequency bands ensure consistent amplitude navigates through frequency bands interest. However, user access total maximum output, approximately dBm, desired. Figure displays unleveled output power capability HMC-T2000 over entire frequency range. important measure spectral purity generator's ability limit harmonic generation. Self-generated harmonic spurious products typically manifest themselves over entire frequency range outside frequency interest. Left unchecked, they play significant role reducing overall dynamic range entire measurement system hence limit measurement device under test. Expensive filter products sometimes required attenuate unwant-
High Frequency Electronics
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High Frequency Products
COST SYNTHESIZER
Figure Plot unleveled output power over frequency range HMC-T2000.
Figure Chart harmonic spurious performance over instrument's frequency range.
products, ultimately generation source preferred option. harmonic rejection HMC-T2000 GHz, respectively, spurious products less than across entire band. chart harmonic spurious performance HMC-T2000 over entire frequency range shown Figure Typical phase noise performance dBc/Hz offset from center frequency with insignificant deviation over temperature range +35°C. This versatile signal generator also features interface innovative control software ensuring carefree integration within multiple test environments. installation disk that accompanies each unit includes drivers required remotely control device well user friendly, lab-windows based, that compatible with Windows operating system. example shown Figure User control facilitated pull down menus that allow programming single swept modes frequency power. Manual control accessed dual function rotary dial, located front panel, that provides user push
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function menu selection turn dial desired value. Integration multiple units within production test environment easy, affordable repeatable incorporation integer mode architecture ability maintain phase coherence between frequency steps. Overall, HMC-T2000 redefines value offering essential functionality solid performance lowest cost. This lightweight compact unit been carefully designed with mobility functionality mind providing user nec-
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Figure window PCbased operation HMC-T2000.
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High Frequency Design
NOISE ARRAY
Spatial Combining Multiple Microwave Noise Radiators
Jiri Polivka Spacek Labs Inc. oise generators used measure noise figure receivers, test system health built-in test (BIT) circuits, jamming, testing digital data transmission systems error rate (BER). Combining noise generator with antenna creates noise radiator [1]. Such noise radiator generates random (non-coherent) noise field which near-field interference observed. noise field utilized various experiments: field distribution waveguides, antennas other structures, testing properties moving objects, etc. This paper discusses experiments increase noise temperature power density spatial combination noise sources. experiments were done evaluate this method alternative using microwave amplifiers. results confirm independence individual noise sources possibility increasing noise temperature well, possible focusing adapting form noise source matrix.
This article reports experiments increase noise temperature test system combining individual radiators two-dimensional matrix
Figure Photograph diagram noise radiator with bias circuit (diode junction transistor).
matched resistor, noise power traditionally defined
Noise Radiator
simplest noise radiator described [1]. half-wave dipole with noise diode plus bias inserting circuit shown Figure more noise radiators were described compared. Their important parameters are: Excess Noise Ratio, noise output referred matched load under ambient temperature, ~290K. Usually, when avalanche noise diodes used.
High Frequency Electronics
Where measured watts, Boltzmann's constant, 1.38 10-23 joules/ Kelvin, (ambient) temperature Kelvins bandwidth Hertz. more practical formula measured Pn(dBm) -174(dBm/Hz) 10logB(Hz) Finally, simply added
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High Frequency Design
NOISE ARRAY
above equation estimate real power level that well-matched noise source delivers into matched load noise bandwidth usually determined power meter (receiver). example, take ~500 MHz, before. (500E8) -174 dBm. Polarization Ratio (PR), ratio noise power density copolar orthopolar orientation receiving antenna with respect noise radiator. bias required generate noise diode avalanche breakdown. Usually, noise diodes break down with 6-10V reverse voltage, current adjusted obtain required noise spectrum. Usually 5-10 best. such noise radiators were used slightly separated, simulate Young's experiment that established wave concept optics [3]. noise temperature detected remote (20-40 radiometer with antenna increased factor when both noise radiators were biased. Varying distance between noise radiators resulted smooth decrease from maximum indicated noise temperature, interference effects were observed.
Figure Radiometry principle.
Noise Radiator Matrix
antenna technology, antennas arranged arrays improve directional concentration transmitted energy. Radiation parameters antenna arrays mathematically determinable, with sizes distances referenced radiated wavelength [4]. This valid coherent signal combination, where mutual coupling relative phase important array element radiators. With noise radiators, determined experiments that they radiate random noise field, with power density determined ENR, radiation pattern roughly corresponding that dipole, with maximum radiation corresponding wavelength radiator dipole. spectral function noise radiator investigated direct tests different frequencies, measuring coherence radius. question addressed these experiments was: While noise power density should grow with number noise radiators matrix, radiation diagram polarization ratio will affected?
Where Kelvins, steradians, degrees. square approximation holds axially symmetric geometry. described experiment noise radiator matrix positioned distance from radiometer antenna, single noise radiator used halfwave dipole long while nine-dipole matrix long. Determining viewing angle dipole easy ratios refer antenna apertures. aperture half-wave dipole often defined ellipse, with longer axis ~one wavelength, shorter, ~one half-wavelength. matrix, these ellipses overlap, viewing solid angles somewhat larger than radiator mechanical size (see Figure solid angle single dipole over distance will 6.26 sterad matrix (Figure obtain: ~10.3 6.77 69.7 sterad ratio those solid angles indicates possible ratio detectable noise temperatures: 69.7/6.26 11.1 times where noise temperature received from matrix, that detected from single dipole. Obviously, would expect that noise temperature should increase nine-fold-the nine noise
Radiometric Approach
Figure illustrates radiometry principle, long viewing angle target smaller than receiving antenna beam width, radiometer connected that antenna will read antenna noise temperature equal target temperature, diminished ratio these solid angles:
High Frequency Electronics
Figure radiator.
Approximate aperture dipole noise
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Figure Equivalent aperture element noise dipole matrix.
radiators that comprise matrix. results experiment, however, gave approximately five times instead nine times greater. Still, result significant increase, accepted confirming possibility augmenting noise temperature spatial combination noise radiators. far, efficiency matrix only estimated. Note that input horn antenna used radiometer beam width degrees, therefore, detected noise temperature will affected (3).
Experiments
experiment measured radiation noise radiator, three noise radiators line, matrix nine noise radiators, two-dimensional arrangement (see Figures receiver radiometer, with LNB. distance between receiver antenna tested radiators Figure presents results tests, with measured radiation patterns compared single plot. trace result noise radiator described [3]). radiation pattern like that dipole, copolar/orthopolar
ratio (PR) Next, three inline radiators were tested with their diodes were connected series. directivity array similar that single dipole observed, shown Green trace, however, poorer inexact mechanical alignment. nine-element matrix, noise radiators were mounted block polyethylene foam, three triplets were biased parallel. necessary complete matrix. blue trace Figure shows results-again slight directivity above single noise radiator observed, only obviously mechanical deviations. excess
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High Frequency Design
NOISE ARRAY
noise temperature on-axis, however, increased only times only. With conductive reflector added about wavelength behind matrix, on-axis noise temperature increase, observed times. Following method presented first [1], coherence radius (CR) both noise radiators determined; both were 9.5-10 from point axis noise temperature dropping one-half. spectrum bandwidth calculated [1]: 0.605 speed light, m/s, coherence radius measured on-axis from noise temperature value half value, increasing distance from radiator radiometer antenna. From this equation, noise spectrum bandwidth ~1.8 with center GHz.
where spectrum bandwidth
Conclusions
experiment with array noise radiators confirmed that: Combining several noise radiators matrix combines resulting on-axis noise temperature less than individual radiator contributions, although combining efficiency only estimated. directional radiation pattern mostly unaffected using matrix compared single noise radiator, expected from nocoherent sources. copolar/orthopolar (PR) ratio deteriorated, imperfect planarity dipoles, presence bias lines, etc. interference effects were observed; rotation movement matrix under bias always produced smooth response. confirmed that array noise radiators remain noncoherent independent, coupling among individual radiators occurs. alternative using wideband high-gain amplifiers, spatial array combination noise radiators offers multiply on-axis noise power density noise temperature. curving face matrix, using reflectors, expected that radiation pattern shaped possibly focused. described experiments were done laboratory bench. anechoic arrangement necessary interference field created.
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Figure Layout biasing arrangement matrix.
References
Polivka, "Active Radiometry Applications," Internat. Journal Waves, Vol.15, March 1995, pp.16731683 Polivka, "Mapping Field Distribution Microwave Radiators," Internat. Journal Waves, Vol.16, Oct,1996, pp.1779-1788 Polivka, "Noise Good, Too," Microwave Journal, March 2004, 66-78 J.D. Kraus, Antennas, McGraw-
Hill, York, 1950 Polivka, "Overview Microwave Sensor Technology," High Frequency Electronics, April 2007, 32-42. Amplified Noise Sources, www.NoiseCom.com.
Author Information
Jiri Polivka Chief Scientist Spacek Labs Inc., East Gutierrez St., Santa Barbara, 93101. reached telephone 805-564-4404 e-mail polivka@spaceklabs.com.
Figure Measured radiation patterns three configurations: single noise dipole (red), three dipoles inline (green), matrix (blue).
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High Frequency Design
ANTENNA ARRAYS
Review Performance Capabilites Antenna Arrays
Gary Breed Editorial Director ntenna arrays back news engineers, with MIMO (multiple input, multiple output) technology beginning deployed improved wireless communications. When also consider established technologies such radar broadcasting, it's clear that antenna arrays important part microwave systems. This subject detailed explain short tutorial, readers encouraged more reading, beginning with references this article.
This tutorial shows some coverage patterns that obtained with antenna arrays, with intent illustrating array capabilities engineers regularly work with antennas
elements
Figure This pattern shape obtained from antenna elements spaced with equal in-phase currents.
Evolution Arrays from Single Antennas
some time education, exposed basic "figure eight" pattern dipole, omnidirectional horizontal pattern vertical monopole. this article, antenna elements short dipoles, operating free space, oriented vertically that they omnidirectional horizontal plane. plots one-half resulting horizontal patterns. Figure begins discussion showing pattern shape obtained with elements, spaced one-half wavelength, in-phase with equal currents. improvement elements compared omnidirectional pattern element quite significant. This illustrates power arrays-large directivity gain improvements with relatively simple arrays having only elements. Figure step toward greater complexity, three-element array. with
High Frequency Electronics
examples this article, elements arranged line-they would left right across bottom each plot. simply extended array Figure maintained elements in-phase with equal currents, resulting pattern would have large sidelobes. Instead, current "tapered," with center element having more than twice much current outer elements. maximum radiation directly broadside, currents in-phase.
elements
Figure When third element added, with currents adjusted minimize unwanted sidelobes, narrower pattern achieved.
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High Frequency Design
ANTENNA ARRAYS
elements elements split beam
elements
Figure More complex patterns also obtained, such this beam with deep notch boresight, flanked major lobes.
elements
Figure From bottom progressively narower minimum-sidelobe patterns inline arrays elements, respectively.
narrower pattern three elements clearly seen comparison with two-element array. Figure shows progressively narrower patterns with more elements. From bottom, these arrays four, eight elements. Note very small improvement from eight elements. eight-element array would benefit from further optimization. relative phases currents antenna elements create huge variety pattern shapes. example, smart antenna might simply have electronically steerable array. Figure shows four-element array with phases selected move main beam degrees from broadside direction. This figure does have optimized phases currents, significant sidelobe seen toward right side. Although optimized, this sidelobe more than down from main lobe acceptable without further adjustment. Finally, Figure shows more complex pattern, with deep notch broadside direction, which would useful eliminating strong interfering signal arriving from that direction. This pattern moderately broad lobes either side, patterns with single major lobes also achieved.
elements steered
Summary Comments
saying goes, pictures often show more than words. This "bite-size" tutorial intended illustrate some pattern characteristics antenna arrays. hope this useful beginning your appreciation this part communication engineering.
References
John Kraus, Antennas, McGraw-Hill, (any edition) 1950 present. Current edition co-authored Ronald Marhefka. Henry Jasik, editor, Antenna Engineering Handbook, McGraw-Hill, (any edition) 1961 present. Current edition edited John Volakis. Plots created using EZNEC+, www.eznec.com
Figure narrow beam multi-element arraycan steered adjusting phase currents each element. This 4-element offset pattern created using straightforward phasing same current distribution boresight array Figure
High Frequency Electronics
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High Frequency Electronics
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Male
N-Type Male
Frequency Range: DC-18 GHz, Impedance: ohms Models Connector Length Inser. Loss (dB) Type (Ft.) Midband Male Male Typ. CBL-1.5 FT-SMSM+ CBL-2FT-SMSM+ CBL-3FT-SMSM+ CBL-4FT-SMSM+ CBL-5FT-SMSM+ CBL-6FT-SMSM+ CBL-10FT-SMSM+ CBL-12FT-SMSM+ CBL-15FT-SMSM+ CBL-2FT-SMNM+ N-Type CBL-3FT-SMNM+ N-Type CBL-4FT-SMNM+ N-Type CBL-6FT-SMNM+ N-Type CBL-15FT-SMNM+ N-Type CBL-2FT-NMNM+ N-Type CBL-3FT-NMNM+ N-Type CBL-6FT-NMNM+ N-Type CBL-15FT-NMNM+ N-Type CBL-20FT-NMNM+ N-Type CBL-25FT-NMNM+ N-Type 11.7 Female Male CBL-3FT-SFSM+ SMA-F SMA-M CBL-2FT-SFNM+ SMA-F CBL-3FT-SFNM+ SMA-F CBL-6FT-SFNM+ SMA-F
Return Loss (dB) Midband Typ.
Price Qty.(1-9) 68.95 69.95 72.95 75.95 77.95 79.95 87.95 91.95 100.95 99.95 104.95 112.95 114.95 156.95 102.95 105.95 112.95 164.95 178.95 199.95 93.95 119.95 124.95 146.95
Mini-Circuits will repair replace your test cable option connector attachment fails within months shipment. This guarantee GUARANTEE excludes cable connector interface damage from misuse abuse.
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IF/RF MICROWAVE COMPONENTS
High Frequency Products
PRODUCTS
ture range This ideal automated surface mount assembly reflow. available tape reel packaging production requirements. Z-Communications, Inc. www.zcomm.com remote location better signal strength. Electrically, this antenna power handling capability watts. vertically polarized with elevation pattern degrees degrees azimuth. VSWR <2.1. Mechanically, PCD800V 1/2" diameter only 8-1/2" long. This profile antenna available cellular 824-896 (PCD800V), 1850-1970 (PCD1900V), spread spectrum 2.4-2.5 frequencies (PCD2400V). Astron Wireless www.astronwireless.com ware platform from Agilent Technologies. Agilent design integration package features broad simulation technologies developers wireless products, such cellular portable phones, pagers, wireless networks, radar satellite communications systems, highspeed digital serial links. With ADI's analog-to-digital converter models, Agilent's users identify test off-the-shelf converters their designs during early stages development, eliminating costly re-specification re-design steps. addition, Agilent's enables fully standard-compliant evaluations 4th-Generation (4G) systems such HSDPA (High-Speed Downlink Packet Access), 3GPP (3rdGeneration Partnership Long Term Evolution) WiMAX. Analog Devices www.analog.com Agilent Technologies www.agilent.com
Miniature GPSDO Frequency Standard
Jackson Labs announced availability FireFly. FireFly extremely small Global Positioning System Disciplined Oscillator (GPSDO) that very power consumption, delivers long-term performance similar Atomic Frequency Standards, supports mobile well stationary applications. 1.25 cubic inches small, FireFly provides Stratum-1 long-term performance better than
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