March 1995 PRODUCT CHANGE NOTICE B50701 DS1267 Passivation Change
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March 1995
PRODUCT CHANGE NOTICE B50701 DS1267 Passivation Change Change Burn-in Flow
DS1267 Dual Digital Potentiometer will undergo change passivation from current single layer Hotwall OXIDE passivation PECVD OXIDE followed NITRIDE dual layer passivation This PECVD OXIDE NITRIDE dual layer passivation been previously qualified been running other products Dallas Semiconductor over years. Converting this dual layer passivation should result improved resistance moisture and/or assembly related damage. Dallas Semiconductor instituting sampled burn-in plan lieu 100% burn-in DS1267. Under sampling plan, each assembly wafer will sampled after assembly. sample will burned-in tested while remainder assembly wafer held until sample completed. sample passes, rest will released through final test finished goods with production burn-in required. sample fails, balance will receive 100% production burn-in flow. Customers will difference performance between passivation schemes change burn-in flow. Additionally, there will marking differences between material processed with either passivation burn-in flow. Complete traceability records will maintained Dallas Semiconductor.
product will begin shipping early April 1995. product with current passivation will continue ship until inventory depleted. further information, please contact Reliability Department Dallas Semiconductor. Wendel
Sincerely,
Reliability Manager
(214) 450-3726 (214) 450-8178
John Director Quality Reliability Assurance
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