| Fulltext Datasheet Results |
1 - 50 of about 312 for bv 304 |
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First line: bv 304 Item no.: Product description: 231-304/026-000 FEMALE PLUG; POLE; SPACING 5.08 IN; WITH CODIG FINGERS; WITH INTEGRATED FIXING FLANGES; CAGE CLAMP®CONNECTION Packing unit pieces Abstract: .. 231-304/026-000 BBJ B/12/699/03 400 12 0,8-2,5. 231-304/026-000 BV 11915/A0 400 16 2,5. 231-304/026-000 CCA DK2127 400 16 0,8-2,5. 231-304/026-000 CSA 154112-1466354 300 15 22-12. 231-304/026 .. Tags: bv 304 datasheet abstract.. |
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First line: 2486 01 Item no.: Product description: 232-304/026-000 ANGLED FEMALE PLUG; POLE; SPACING 5.08 IN; WITH CODIG FINGERS; WITH INTEGRATED FIXING FLANGES; CONDUCTER EXIT OPPOSIDE LATCHES Packing unit pieces Abstract: .. 232-304/026-000 BBJ B/12/699/03 250 14 0,8-2,5. 232-304/026-000 BV 11915/A0 400 16 2,5. 232-304/026-000 CCA DK2127 250 14 0,8-2,5. 232-304/026-000 CSA 154112-1466354 300 15 22-12. 232-304/026 .. Tags: 2486 01 232 600 transistor 304 datasheet abstract.. |
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First line: SPICE PARAMETER UDZS6.2B Abstract: .. 8 M Granding Coefficient - 0.304. 9 VJ Junction Potential V 0.548. 10 FC Depletion Capacitance .. 11 BV Breakdown Voltage V 6.195. 12 IBV Breakdown Current A 5.000E-05. 13 TT Transit Time SEC 2 .. Tags: datasheet abstract.. |
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First line: 10kw* ENGLAND SEMICONDUCTOR 20KW33A thru 20KW280A 20,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 38.6 THRU 327.5 20K.W series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, rapid junctio Abstract: .. @Vr lpp BV volts volts Ve Volts HA A mV/C 20KW33A 33 38.6 5 54.8 10 274 38 20KW36A 36 42.1 5 59.7 10 251 .. 10 42 269 20KW240A 240 281.0 5 388.0 10 39 293 20KW260A 260 304.0 5 419.0 10 36 317 20KW280A 280 327 .. Tags: 10kw* datasheet abstract.. |
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First line: ENGLAND SEMICONDUCTOR 15KP17CA thru 15KP280CA 15,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 19.9V THRU 327.5V TheNES15KP series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, rapid junc Abstract: .. 10 42 269 15KP240CA 240 281.0 5 388.0 10 39 293 15KP260CA 260 304.0 5 419.0 10 36 317 15KP280CA 280 .. 36 40 43 46 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 Breakdown Voltage BV @ volts 19.9 21.0 23.3 25 .. Tags: datasheet abstract.. |
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First line: ENGLAND SEMICONDUCTOR 20,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 38.6V THRU 327.5V 20KP series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, rapid junction cooling under pulse power Abstract: .. MAXIMUM RATINGS: 20,000 Watts of Peak Pulse Power Dissipation @ 25 ° C I i o volts lo BV min , , - .. 10 39 293 20KP260CA 260 304.0 5 419.0 10 36 317 20KP280CA 280 327.5 5 452.0 10 33 342 âTM¦Suffix 'CA .. Tags: datasheet abstract.. |
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First line: ENGLAND SEMICONDUCTOR 20KP33A thru 20KP280A 20,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 38.6V THRU 327.5V 20KP series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, rapid junction coo Abstract: .. Part voltage BV It VOlt @ Ipp Leakage Pulse Varof Number* vR @ mA lmSec Ir@Vr Current BV volts .. 10 42 269 20KP240A 240 281.0 5 388.0 10 39 293 20KP260A 260 304.0 5 419.0 10 36 317 20KP280A 280 327 .. Tags: datasheet abstract.. |
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First line: 15KW75CA ENGLAND SEMICONDUCTOR 15KW17CA thru 15KW280CA 15,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 19.9V THRU 327.5V TheNES 1SKW series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, Abstract: .. * VR @ mA lmSec Ir@Vr Ipp BV volts volts Ve Volts ÃxA A mV/C 15KW17CA 17 19.9 50 29.3. 5000 512 17 .. 304.0 5 419.0 10 36 317 15KW280CA 280 327.5 5 452.0 10 33 342 'Suffix 'CA' indicates 15% tolerance .. Tags: 15KW75CA datasheet abstract.. |
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First line: ENGLAND SEMICONDUCTOR 15KP17A thru 15KP280A 15,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 19.9V THRU 327.5V TheNES15KP series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, rapid juncti Abstract: .. @Vr IrP BV volts volts Vc Volts HA A mV/C 15KP17A 17 19.9 50 29.3. 5000 512 17 15KP18A 18 21.0 50 30.9 .. 10 42 269 15KP240A 240 281.0 5 388.0 10 39 293 15KP260A 260 304.0 5 419.0 10 36 317 15KP280A 280 327 .. Tags: datasheet abstract.. |
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First line: ENGLAND SEMICONDUCTOR 15KW17A thru 15KW280A 15,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 19.9V THRU 327.5V 1SKW series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, rapid junction coo Abstract: .. MAXIMUM RATINGS: 15,000 Watts of Peak Pulse Power Dissipation @25 °C t , o volts to BV min : , 12 .. 10 42 269 15KW240A 240 281.0 5 388.0 10 39 293 15KW260A 260 304.0 5 419.0 10 36 317 15KW280A 280 327 .. Tags: datasheet abstract.. |
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First line: 10 M 20A ISO-20A* ENGLAND SEMICONDUCTOR 20KW33CA thru 20KW280CA 20,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE VOLTAGES FROM 38.6 THRU 327.5 20KW series transient suppressor diodes designed protect electronic equipment from failure high voltage transients. Because their special internal design, Abstract: .. @Vr Current BV volts volts Vc Volts HA Ipp A mV/C 20KW33CA 33 38.6 5 54.8 10 274 38 20KW36CA 36 42.1 5 .. 10 42 269 20KW240CA 240 281.0 5 388.0 10 39 293 20KW260CA 260 304.0 5 419.0 10 36 317 20KW280CA 280 .. Tags: ISO-20A* 10 M 20AÂ datasheet abstract.. |
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First line: 4953 NTE4900 C 4927 NTE4903 thru NTE4999 Surge Clamping, Transient Overvoltage Suppressor Bidirectional Description: NTE4900 series silicon Transient Suppressors designed protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become v Abstract: .. is defined as: The ratio of the actual VC Clamping Voltage to the actual BV Breakdown Voltage .. 4993 183 273.00 304.00 320.00 336.00 1.0 438.0 5.0 4.50 0.110. 4995 183 300.00 333.00 350.00 368 .. Tags: C 4927 NTE4900 4953 ON 4959 zener 183 NTE 4939 4903 NTE4903 NTE4999 NTE4900 |
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First line: Zener diode 183 NTE4902 thru NTE4998 Surge Clamping, Transient Overvoltage Suppressor Unidirectional Description: NTE4900 series silicon Transient Suppressors designed protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very Abstract: .. : The ratio of the actual VC Clamping voltage to the actual BV Breakdown Voltage as measured .. 4992 183 273.00 304.00 320.00 336.00 1.0 438.0 5.0 4.50 0.110. 4994 183 300.00 333.00 350.00 368 .. Tags: Zener diode 183 4946 4914 pdf 4914* 4906 NTE4902 NTE4998 NTE4900 |
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First line: C 4927 c 4977 transistor NTE490* NTE4903 thru NTE4999 Surge Clamping, Transient Overvoltage Suppressor Bidirectional Description: NTE4900 series silicon Transient Suppressors designed protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices Abstract: .. The clamping factor is defined as: The ratio of the actual VC Clamping Voltage to the actual BV .. 4993 183 273.00 304.00 320.00 336.00 1.0 438.0 5.0 4.50 0.110. 4995 183 300.00 333.00 350.00 368 .. Tags: NTE490* c 4977 transistor C 4927 NTE4903 NTE4999 NTE4900 NTE4908 NTE4909 |
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First line: Sl 3060 analog resolver resolver RDC-19190 MONOBRID SERIES DATA DEVICE CORPORATION TABLE ORDERING INFORMATION PERFORMANCE CHARACTERISTICS RDC*19190-301 RDC-19191-302 RDC-19192-303 RDC-19193-304 XDC-19194-301 XOC-19196-302 XDC-19196-303 "XDC-19196-304 XDC-19197-304 RDC-19198-303 RDC-19199-304 Re Abstract: .. &-303 · XDC-1919&-304 XDC-19197-304 RDC-19198-303 'RDC-19198-304 RDC-19199-304. 10 12 14 14 .. Figures 7 and Bare 11.BV resolver and 2.0V direct input connection diagrams respectively .. Tags: resolver analog resolver Sl 3060 datasheet abstract.. |
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First line: 500Ah Abstract: .. 1.70V 603 455 304 181 135 109 91.3 78.8 63.8 53.8. 1.75V 526 420 280 171 126 103 86.3 75.0 61.3 51.3. 1 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: VRLA datasheet abstract.. |
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First line: 1000 1000Ah Abstract: .. 674 502 408 346 304 244 208. 1.75V 2278 1562 1040 644 484 394 332 290 238 202. 1.80V 1960 1440 980 616 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: hall 502 datasheet abstract.. |
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First line: muMNARv 23C4096 524.288 organization Single Supply Fast access time 250ns (max) Totally static operation Completely compatible Operating current 60ma Standby current 200na Abstract: .. • 32-Pln DIP Hnout • Output enable function Description The 23 C4096 b a 5V only, 4.294,304- .. -down, with power-down 524,288 x 8-bit CMOS ROM controlled bv the chip enable CE Input.When .. Tags: datasheet abstract.. |
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First line: AOT3N60 600V,2.5A N-Channel MOSFET AOT3N60 have been fabricated using advanced high voltage MOSFET process that designed deliver high levels performance robustness popular ACDC applications.By providing RDS(on), Ciss Crss along with guaranteed avalanche capability these parts adopted quickly into ex Abstract: .. BV DSS /∆TJ 0.65. V/ o C. 1. 10. IGSS Gate-Body leakage current ±100 nΑ. VGS th Gate Threshold Voltage .. Ciss 240 304 370 pF. Coss 25 31.4 38 pF. Crss 2.6 3.3 4 pF. Rg 2.3 2.9 4.5 Ω. Qg 9.9 12 nC. Qgs 2.1 3 nC. Qgd 4.6 6 .. Tags: AOT3N60 |
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First line: aod3N60* n channel 700V AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET AOD3N60 AOU3N60 have been fabricated using advanced high voltage MOSFET process that designed deliver high levels performance robustness popular AC-DC applications. providing RDS(on), Ciss Crss along with guaranteed avalanche capabil Abstract: .. BV DSS /∆TJ. 0.65 V/ o C. 1. 10. IGSS Gate-Body leakage current ±100 nΑ. VGS th Gate Threshold Voltage .. Ciss 240 304 370 pF. Coss 25 31.4 38 pF. Crss 2.6 3.3 4 pF. Rg 2.3 2.9 4.5 Ω. Qg 9.9 12 nC. Qgs 2.1 3 nC. Qgd 4.6 6 .. Tags: n channel 700V aod3N60* AOD3N60 AOU3N60 |
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First line: BA 75 is bq 60 vishay EB BH Ra IHTH-1125 Packaging Methods Vishay Dale Leaded Magnetics Packaging Methods TAPE REEL inches [millimeters] Abstract: .. IHA-304 - - - - - - B01 BA EB 160. Packaging Methods. Leaded Magnetics Packaging Methods Vishay Dale .. IHB-4 - - - - - - B40 BV EB 16. IHB-5 - - - - - - B40 BV EB 16. IHB-6 - - - - - - B40 BV EB 16. IHV-15-500 - - - - - - B48 .. Tags: BH Ra vishay EB bq 60 BA 75 is VISHAY BJ pj 88 MIL-T-27E MIL-C-15305* IHTH-1125 IHA-502 IHA-302 eb 203 eb 102 BV 302 52 ra datasheet abstract.. |
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First line: 8 speed resolver Resolvers digital to synchro converter 90v rms synchro/resolver digital converter tracking_12 series 268A300 Module outline position output Fast tracking Excitation frequencies 2600 Velocity output Inter-LSB output Direction output Clock output Abstract: .. ORDERING INFORMATION 268A SUFFIX 300 301 302 303 304 30S 306 307 30B 309 310 311 312 313 314 31S 316 .. VOLTAGE SO-2600HZ LSTIL 11.BV LSTIL 90V HCMOS 11.BV HCMOS 90V LSTIL 11.BV LSTIL 90V HCMOS 11.BV .. Tags: digital to synchro converter 90v rms Resolvers 8 speed resolver datasheet abstract.. |
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First line: PA66* transistor T04 PA66 - GF 25 MAT12SS7* SS304 Cable Ties Fixings Range Stainless Steel Cable Ties Abstract: .. These ties are available in both 316 and 304 grades of stainless steel. Application. The M range .. Length Width UL GL BV DNV VG 95387 T04 SAE AS23190. MIL MS3367. DEF STAN. MAT8SS7 230 7.0 6 2. MAT12SS7 .. Tags: SS304 MAT12SS7* PA66 - GF 25Â transistor T04 PA66* SS316 CABLE TIE ms3367* heat resistant cable 95208 94338 datasheet abstract.. |
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First line: 46244-A6 IEC 60068-2-11 en60934 Thermal Overcurrent Circuit Breaker Single pole switch/thermal circuit breaker (S-type 60934) with tease-free, trip-free, snap action mechanism. Designed snapin panel mounting utilising round hole industry standard fuseholder cut-out dimensions. Featuring ergonomicall Abstract: .. BV AC 250 V; DC 28 V 0.05..16 A. UL AC 250 V 0.05..6 A. AC 125 V 7..16 A. DC 50 V 0.05..16 A. CSA AC 250 V .. Push button splash cover transparent Y 304 745 01 IP64 Terminal shroud Y 305 602 01 IP64 When .. Tags: IEC 60068-2-11 46244-A6 A/dc motor qc -0908 en60934 datasheet abstract.. |
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First line: 2SK2900-01 FAP-IIIB Series Features High Current On-Resistance Secondary Breakdown Driving Power Avalanche Rated Abstract: .. * L=0,304mH, VCC=24V. - Electrical Characteristics TC=25°C , unless otherwise specified .. Drain-Source Breakdown-Voltage BV DSS ID=1mA VGS=0V 60 V. Gate Threshhold Voltage V GS th ID .. Tags: 2SK2900-01 |
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First line: XTV12950 95Ah Abstract: .. ,029 1,675 1,137 713 419 304 238 198 134 113 58.5. 1.85V 2,124 1,804 1,476 1,056 672 398 289 226 189 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: XTV12950 |
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First line: 12500W 500W Abstract: .. 1.85V 304 270 247 211 179 140 115 95.3 81.1 57.3. F.V/Time 5MIN 7.5MIN 10MIN 15MIN 20MIN 30MIN .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: datasheet abstract.. |
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First line: 12620 XHRL12620W 620W Abstract: .. 1.60V 7,070 6,088 5,529 5,280 4,692 3,770 3,108 2,304 1,344 966. 1.67V 6,439 5,680 5,432 4,894 4 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: 12620 817 CN XHRL12620W |
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First line: 12880 general purpose battery years standby service more than cycles 100% discharge cycle service with batteries, rechargeable highly efficient leak proof maintenance free. 12880 88Ah Abstract: .. ,373 1,888 1,166 716 426 304 240 201 134 109 57.8. 1.75V 2,995 2,261 1,828 1,145 707 424 301 238 200 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: 88ah 535-2 232-175 datasheet abstract.. |
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First line: 1228W Abstract: .. 304 265 202 170 137 87.7 53.2. 1.75V 522 408 337 293 258 197 167 135 86.8 51.5. 1.80V 498 391 325 280 248 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: datasheet abstract.. |
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First line: 12750 designed specially electric vehicles, such electric golf cart, electric wheelchair, mower, dust collector.etc. high cycling life, high efficiency long service life. 12750 75Ah Abstract: .. 304 219 172 142 93.4 76.4 41.0. 1.75V 863 513 373 299 216 170 140 92.3 75.7 40.7. 1.80V 839 500 367 293 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: wheelchair* datasheet abstract.. |
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First line: 12280W 280W Abstract: .. 1.60V 3,354 2,304 1,788 1,476 1,110 888 822 762 648 485. 1.67V 3,036 2,166 1,700 1,417 1,079 876 .. EUROPE HQ CSB Battery Europe BV. Tel : +31 0 -180-418-140 Fax : +886-2-2555-3300 mail .. Tags: HRL 12280W a17f smd datasheet abstract.. |
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First line: lr2 d13 tundra scv64 KDATA26* mark ki6 SCV64 Backplane Interface Components SCV64 User Manual Signals Characteristics Terminology input output types have been abbreviated with letter code. example, VDATA31-00 signals shown input type CTTL (which CMOS inputs with normal voltage thresholds) output typ Abstract: .. -3-»-0 bSûôlQl 0004S73 7bT This Material Copyrighted Bv Its Respective Manufacturer Signals .. A9 A14 A17 1 50 45 39 A19 B1 B20 1 33 28 19 D1 D20 E8 1 10 1 304 Ell E14 Gl ■ 296 287 278 G5 G16 G20 ■ 273 267 261 .. Tags: SCV64 mark ki6 KDATA26* tundra scv64 lr2 d13 datasheet abstract.. |
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First line: diagram TA 306 8 pin ic AN7280S AN7280S Front-end Radio Description AN7280S monolithic integrated circuit designed except amp. radio. features built-in local oscillation frequency buffer output, diode driver antenna damping (search stop control) Features High sensitivity, high ratio Good characteris Abstract: .. – 1^32052 0013^23 231 m 304 This Material Copyrighted By Its Respective Manufacturer AN7280S .. Vee = 8V, Vin = 51dBj.1 Vee = 8V, Vin = 67dBj.1 Vee = BV, Vin = 53dBj.1 6 min. 22 typo 30 384 58 0.05 6.5 .. Tags: diagram TA 306 8 pin ic datasheet abstract.. |
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First line: 268D300* Synchro to digital convertor 268D300 synchro/resolver digital converter single power series 268D300 only operation module outline 3-state output byte word minute accuracy tracking 5KHz excitation Abstract: .. 47-5000hz 303 SYNC 11.8V 360-5000HZ 304 SYNC 90V 360-5000HZ 305 RSVR 2.5V 360-5000HZ 306 RSVR 5 .. RSVR SYNC RSVR RSVR RSVR STATOR VOLTAGE 11.BV 90V 11.BV 11.BV 90V 2.5V 5.9V 11.BV 11.BV 2.5V 5.9V .. Tags: 268D300 Synchro to digital convertor 268D300* datasheet abstract.. |
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First line: MR27V6452D_Preliminary 4,194,304-Word 16-Bit 8,388,608-Word 8-Bit 8-Word 16-Bit 16-Word 8-Bit Page Mode Time PROM_ MR27V6452D 64Mbit electrically Programmable Read-Only Memory with page mode. configuration electrically switched between 4,194,304 word 16bit 8,388,608 word bit. MR27V6452D operates sin Abstract: .. ■ b?24EMD DD245T0 T74 ■ OK.I Semiconductor MR27V6452D 4, 194,304-Word x 16-Bit or 8,388,608- .. * :VH=BV. 7. MR27V6452D. Programming Waveform. AO - A21. ~ t AS tpw tAH. X. CE tOES OE t OFP. tos. tOH. I tOE. DO - .. Tags: datasheet abstract.. |
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First line: MR27V3252D_Preliminary 2,097,152-Word 16-Bit 4,194,304-Word 8-Bit 8-Word 16-Bit 16-Word 8-Bit Page Mode Time PROM_ MR27V3252D 32Mbit electrically Programmable Read-Only Memory with page mode. configuration electrically switched between 2,097,152 word 16bit 4,194,304 word bit. MR27V3252D operates sin Abstract: .. ■ b?24EMD DD245T0 T74 ■ OK.I Semiconductor MR27V3252D 2,097, 152-Word x 16-Bit or 4, 194,304- .. * :VH=BV. 7. MR27V3252D. Programming Waveform. AO - A20. =:; tAS tpw tAH tOES t OFP. K. CE. OE. tos. tOH. / tOE. DO .. Tags: datasheet abstract.. |
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First line: G12N60b3 HGTP12N60B3, HGT1S12N60B3S 4410.2 27A, 600V, Series N-Channel IGBTs Abstract: .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV. CES. 600 V. Collector Current .. - 304 350. μ. J. Turn-Off Energy Note 3 E. OFF. - 250 350. μ. J. HGTP12N60B3, HGT1S12N60B3S. ©2001 .. Tags: g12n60b3* HGTP12N60B3 |
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First line: 30267 MIL-R-26 RW 10.50 DALE RW Vitreous Wirewound Resistors Abstract: .. = Value overflow BV Note: NI is also known as SWI 3 digit value 1 digit multiplier MULTIPLIER .. L ± 1.6 mm 101.6 [4.000] 101.6 [4.000] 152.4 [6.000] 203.2 [8.000] 266.7 [10.50] 304.8 [12.00 .. Tags: RW 10.50 30267 RW303050* RW Series MIL-R-26 (RW), MIL-R-26* FST-A DALE RW datasheet abstract.. |
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First line: SERIES REVERSE VOLTAGE Volts POWER DISSIPATION WATTS GLASS PASSIVATED UNIDIRECTIONAL BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS Abstract: .. Variation of Bv. UNI BI VR V Min V Max V It mA Vc V Ipp A IR uA mV/°C. SA5.0 SA5.0C 5 .. SA170 SA170C 170 189 231.0 1 304.0 1.6 3 230. SA170A SA170CA 170 189 209.0 1 275.0 1.8 3 208. Suffix'C .. Tags: SA33C sa17* datasheet abstract.. |
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First line: BV EI 304 MITEL cmos MT8860 DTMF Decoder Central Office quality detection Excellent voice talk-off Detect times down 20ms Single supply operation Latched three-state buffered outputs Detects DTMF combinations Uses inexpensive 3.58 crystal power CMOS circuitry Adjustable acquisition release times DTM Abstract: .. 0.204 0.012 0.304 0.008 0.204 0.015 0.381 0.008 0.204 0.012 0.304 0.008 0.204 0 .. 15° 0° 15" NOTE: Millimeters This Material Copyrighted Bv Its Respective Manufacturer 3-27 .. Tags: BV EI 304 datasheet abstract.. |
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First line: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description AOD4128 uses advanced trench technology provide excellent RDS(ON), gate charge gate resistance. This device ideally suited side switch core power conversion. device also used PWM, load switching general purpose applicatio Abstract: .. 304. 75. 37. Continuous Drain Current G. Parameter. TC=25°C TC=100°C. Gate-Source Voltage. Drain .. BV. I. Unclamped Inductive Switching UIS Test Circuit & Waveforms. Vds. AR. DSS. 2. E = 1/2 LI AR AR .. Tags: AOD4128 |
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First line: AOT3N60 2.5A, 600V N-Channel MOSFET formerly engineering part number AOT9602 AOT3N60 been fabricated using advanced high voltage MOSFET process that designed deliver high levels performance robustness popular AC-DC applications. providing RDS(on), Ciss Crss along with guaranteed avalanche capability Abstract: .. Ciss 240 304 370 pF. Coss 25 31.4 38 pF. Crss 2.6 3.3 4 pF. Rg 2.3 2.9 4.5 Ω. Qg 9.9 12 nC. Qgs 2.1 3 nC. Qgd 4.6 6 .. BV. I. Unclamped Inductive Switching UIS Test Circuit & Waveforms. Ig. Vgs. -+ VDC. DUT. L. Vds. Vgs. Vds .. Tags: AOT9602 |
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First line: 3118135 5-HESI Order No.: 3004100 Abstract: .. Catalog page information Page 304 CL-2007 Product notes. WEEE/RoHS-compliant since: 01/01 .. Certification ABS, BV, CSA, GL, GOST, LR, PRS, RS, UL. UK 5-HESI Order No.: 3004100 http://eshop .. Tags: 3118135 datasheet abstract.. |
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First line: 46244-A6 Thermal Overcurrent Circuit Breaker Single pole switch/thermal circuit breaker (S-type 60934) with tease-free, trip-free, snap action mechanism. Designed snapin panel mounting utilising round hole industry standard fuse-holder cut-out dimensions. Featuring ergonomically styled colour actuat Abstract: .. VDE, BV AC 250 V; DC 28 V 0.05..16 A. UL AC 250 V 0.05.. 6 A. AC 125 V 7 .. 16 A. DC 50 V 0.05..16 A. CSA AC .. Y 304 745 01 IP 54 Y 305 602 01 IP 64 When using splash cover please note that the max. panel .. Tags: 46244-A6 en60934 datasheet abstract.. |
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First line: 28f400 BYTE PROGRAM intel pa28f400 DSIGN RCOMMNDATIONS RFRNC ONLY 4-MBIT SmartVoltage BOOT BLOCK FLASH MMORY FAMILY Abstract: .. tPHWL changed from 1000 ns to 800 ns for 3.3 V BV-80, BV-120 commercial. tPHEL changed from 1000 .. The 28F400/28F004B boot block flash memory family is a high-performance, 4-Mbit 4,194,304 .. Tags: intel pa28f400 28f400 BYTE PROGRAM 297595 290580 28F400BV-T 28F004BV 28F004 datasheet abstract.. |
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First line: XS-14* mh89780* MITEL ST-BUS" FAMILY MH89780 CEPT Framer Interface Mitel ST-BUS compatible Interface between 2048 kb/s, (ST-BUS), serial stream bidirectional CEPT digital trunk Compatible with CCITT G.732 Insertion framing/alignment information frame elastic buffer Abstract: .. CEPT Link Multiframe Format This Material Copyrighted Bv Its Respective Manufacturer 8-111 .. 0.204 0.012 0.304 0.008 0.204 0.015 0.381 0.008 0.204 0.012 0.304 0.008 0.204 0 .. Tags: mh89780* XS-14* datasheet abstract.. |
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First line: T120 Switch 28f400 BYTE PROGRAM intel pa28f400 4-MBIT (256K 512K SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B Intel SmartVoltage Technology Program/Erase 2.7V, 3.3V Read Operation Increased Programming Throughput Very High-Performanc Abstract: .. Both BE/CE and BV/CV products also operate at 5V for high-speed access times. Throughout this .. The 28F400/28F004B boot block flash memory family is a high-performance, 4-Mbit 4,194,304 .. Tags: intel pa28f400 28f400 BYTE PROGRAM T120 Switch PSOP 80C188EB 28f800 56 pin 28F400BV-T 28F004BV 28F004 datasheet abstract.. |
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First line: SMC48 SMC14CA EK 16 SMC26 SMC14 EE3H3E312 SMC5.0 SMC170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS 1500 Watts Peak Pulse Power Dissipation Standoff Voltages Constructed with Glass Passivated Abstract: .. Manufacturer PART NUMBER PART NUMBER REVERSE STANDOFF VOLTAGE BREAKDOWN VOLTAGE Bv VOLTS @ lT .. 5.8 HP SMC170 SMC170C 170 189 231 1 5 304 4.9 HQ SMC170A SMC170CA 170 I 189 209 1 5 275 5.5 HR 1. Suffix .. Tags: SMC14 SMC26 EK 16 SMC14CA SMC48 datasheet abstract.. |
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First line: g10 t60 4-MBIT (256K 512K SmartVoltage BOOT BLOCK FLASH MEMOR FAMIL 28F400BV-T 28F400CV-T 28F004BV-T 28F400CE-T 28F004BE-T Abstract: .. BV/CV suffix products offer 3.0‐3.6V operation. Both BE/CE and BV/CV prod-ucts also operate .. The 28F400/28F004B boot block flash memory family is a high-performance, 4-Mbit 4,194,304 .. Tags: g10 t60 28F400BV-T 28F004BV 28F004 datasheet abstract.. |
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