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	1 - 50 of about 177 for ba 5888
First line: 9y19503 rg-218 RG-219 BOEING ba 5888 Cable Groups Cable Group Cable Type Abstract: .. 9 Times AA 5888. Cable Group Cable Type Cable PN. Cable Groups. Connecting Innovation to .. ITT BA 20048. 13 Teledyne Thermatics 13784. 14 Teledyne Thermatics 13850. 15 Boeing BMS 13-65 Type .. Tags: ba 5888 BOEING RG-219 rg-218 9y19503 datasheet abstract..	62.43 Kb	2 Pages	Original

First line: D 5888 s cd 5888 s CD 5888 IC CD 5888 ba 5888 dependence character uPD17246MC Room Temp. FCR3.52MC5 (item a~e) item UIH/UIL U2H/U2L [MHz] Fosc [uS] Trise Duty Ustart Uhold 3.5044 43.5 3.5051 43.9 3.5043 43.5 1.01 1.01 3.5056 45.5 1.03 1.02 3.5055 45.3 1.06 1.05 Abstract: .. b. U2H/U2L EU] : U2H H - j U2L Bâ€” â– i i i -8- i -8- i -8 I C, FO5C [/] -9-e- d, Trise EuS] 400 300 200 100 .. [Bl TDK standard 3.5229 3.5141 3.515] 3.5179 3.5888 3.52]8 3.5898 3.5224 3.5125 3.5228 3.5169 .. Tags: ba 5888 CD 5888 CD 5888 IC cd 5888 s D 5888 s datasheet abstract..	162 Kb	7 Pages	OCR Scan

First line: 6A 1176 CD 5888 diode cc 3053 EMC2112 EMC2112* 17.4 TACH Counts Conversion Preface This application note provides look tables calculation TACH Counts with EMC2103, EMC2104, EMC2105, EMC2106, EMC2112, EMC2113, EMC2301, EMC2302, EMC2303, EMC2305. Audience Abstract: .. 1792 38 2194 5888 B8 668. 1824 39 2156 5920 B9 664. 1856 3A 2119 5952 BA 661. 1888 3B 2083 5984 BB 657. 1920 3C 2048 6016 BC 654. 1952 3D 2014 6048 BD 650. 1984 3E 1982 6080 BE 647. 2016 3F 1950 6112 BF 643. 2048 40 1920 .. Tags: diode cc 3053 6A 1176 EMC2112* CD 5888 CB CD 5888 BF 819 bC 2240 ba 5888 AN-17 ae 5343 7808 7391 6912 EMC2103 EMC2104 EMC2105 EMC2106 EMC2112 EMC2113 EMC2301 EMC2302 EMC2303 EMC2305	107.92 Kb	22 Pages	Original

First line: ST 8995 A CD 5888 IC ba 5888 cd 5888 s CD 5888 dependence character uPD69MC Room Temp. FCR3.52MC5 (item a~e) item UIH/UIL U2H/U2L [MHz] Fosc [uS] Trise Duty Ustart Uhold 3.5094 49.7 3.5069 1.01 1.01 3.5042 45.9 1.05 1.05 3.5037 45.9 1.09 1.08 uPD69MC Abstract: .. ] U2H b-^ U2L bâ€”s- _l_L. c, Fosc [/] .3 .1 -.3 -.5 400 300 200 100 0 60 55 50 45 40 8â€”B- d, Trise EuS .. 8860 [Bl TDK 5tondord 3.5229 3.5141 3.5153 3.5179 3.5888 3.5238 3.5898 3.5224 3.5125 3.5228 3 .. Tags: CD 5888 cd 5888 s ba 5888 CD 5888 IC ST 8995 A datasheet abstract..	163.43 Kb	7 Pages	OCR Scan

First line: ba 5888 V82658J04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. 0.10 M C BA. 0.1496. 3.00 0.118. 2.00 0.0787. 4.00 0.1575. 1.25 ± 0.006 31.75 ±0.15 4.00 2X .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: ba 5888 V82658J04SATG	84.58 Kb	13 Pages	Original

First line: V58C3643204SAT HIGH PERFORMANCE VOLT SDRAM 512K CILETIV LESOM System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK4) Abstract: .. Input capacitance A0~A10 , BA 0~BA1 C IN1 2.5 4.5 pF. Input capacitance CK, CK , CKE, CS , RAS .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V58C3643204SAT	163.66 Kb	12 Pages	Original

First line: ba 5888 V82648R04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. 0.10 M C BA. 0.1496. 3.00 0.118. 2.00 0.0787. 4.00 0.1575. 1.25 ± 0.006 31.75 ±0.15 4.00 2X .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: ba 5888 V82648R04SATG	190.05 Kb	13 Pages	Original

First line: V826516K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. , BA. 0. ~ BA. 1. , RAS, CAS, WE CIN. 1. 29 34 pF. Input capacitance CKE. 0. CIN. 2. 29 34 pF. Input capacitance .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V826516K04SATG	85.87 Kb	13 Pages	Original

First line: V826416S04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. , BA. 0. ~ BA. 1. , RAS, CAS, WE CIN. 1. 29 34 pF. Input capacitance CKE. 0. CIN. 2. 29 34 pF. Input capacitance .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V826416S04SATG	191.12 Kb	13 Pages	Original

First line: dll 1501 V58C365164S Mbit SDRAM 3.3VOLT CILETIV LESOM System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RASprecharge time tRP .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: dll 1501 ba 5888 V58C365164S	489.05 Kb	44 Pages	Original

First line: V58C365164S Mbit SDRAM 3.3VOLT banks 1Mbit organization High speed data transfer rates with system frequency Data Mask Write Control (DM) Four Banks controlled Programmable Latency: 2.5, Programmable Wrap Sequence: Sequential Interleave Programmable Burst Length: Sequential Type Interleave Type Auto Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RASprecharge time tRP .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: SSTL-2	477.24 Kb	44 Pages	Original

First line: V58C365164S Mbit SDRAM 3.3VOLT CILETIV LESO System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) 4.3ns 5.4ns Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RAS precharge time tRP .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V58C365164S	495.64 Kb	44 Pages	Original

First line: V54C317162VC 200/183/166 VOLT REFRESH ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit V54C317162VC Clock Frequency (tCK) Latency Cycle Time (tCK) Access Time (tAC) Abstract: .. CAS RAS CS BA. A10 A0 A1 A2 A3 VCC. VSS I/O16 I/O15 VSSQ I/O14 I/O13 VCCQ I/O12 I/O11 VSSQ I/O10 I/O9 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C317162VC	121.9 Kb	21 Pages	Original

First line: V54C33316G2V 166/143 VOLT ULTRA HIGH PERFORMANCE SDRAM BANKS Mbit V54C33316G2V Abstract: .. With A9 being low, the BA is used select bank to precharge. The precharge command can be imposed .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V54C33316G2V	103.35 Kb	23 Pages	Original

First line: V54C31816G2V 166/143 VOLT ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit V54C31816G2V Abstract: .. With A9 being low, the BA is used select bank to precharge. The precharge command can be imposed .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V54C31816G2V	104.21 Kb	23 Pages	Original

First line: V54C316162V 200/183/166/143 VOLT, REFRESH ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit JEDEC Standard 3.3V Power Supply V54C316162V ideally suited high performance graphics peripheral applications Single Pulsed Interface Programmable Latency: Inputs sampled positive going edge clock Programmable Wrap Abstract: .. address A10 is used to invoke auto precharge BA define the bank to be precharged. A10 is low, auto .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C316162V	208.61 Kb	21 Pages	Original

First line: V54C316162VC 200/183/166/143 VOLT, REFRESH ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit CILETIV LESO V54C316162VC Clock Frequency (tCK) Latency Cycle Time (tCK) Access Time (tAC Abstract: .. address A10 is used to invoke auto precharge BA define the bank to be precharged. A10 is low, auto .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C316162VC	215.62 Kb	22 Pages	Original

First line: V54C316162VC 200/183/166/143 VOLT, REFRESH ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit JEDEC Standard 3.3V Power Supply V54C316162VC ideally suited high performance graphics peripheral applications Single Pulsed Interface Programmable Latency: Inputs sampled positive going edge clock Programmable Wra Abstract: .. address A10 is used to invoke auto precharge BA define the bank to be precharged. A10 is low, auto .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C316162VC	219.56 Kb	22 Pages	Original

First line: V54C31616G2V 166/143 VOLT ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit V54C31616G2V Abstract: .. With A9 being low, the BA is used select bank to precharge. The precharge command can be imposed .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V54C31616G2V	102.16 Kb	23 Pages	Original

First line: V54C31732G2V HIGH PERFORMANCE 166/143 VOLT ENHANCED GRAPHICS 512K SDRAM BANKS 256Kbit V54C31732G2V Abstract: .. With A9 being low, the BA is used select bank to precharge. The precharge command can be imposed .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V54C31732G2V	115.89 Kb	24 Pages	Original

First line: V61C31161024 HIGH SPEED STATIC Abstract: .. BA. UBE, LBE Access Time — 5 — 6 — 7 ns. t. OE. Output Enable to Output Valid — 5 — 6 — 7 ns. t. CLZ. Chip Enable to .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: K 2796 V61C31161024	56.52 Kb	10 Pages	Original

First line: V82658J04S VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE CILETIV LESO Abstract: .. 0.10 M C BA. 0.1496. 3.00 0.118. 2.00 0.0787. 4.00 0.1575. 1.25 ± 0.006 31.75 ±0.15 4.00 2X .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V82658J04S	164.41 Kb	13 Pages	Original

First line: pc2100* V827316K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Unbuffered 16,777,216 Organization SDRAM Modules Utilizes High Performance SDRAM TSOPII-66 Packages Single +2.5V 0.2V) Power Supply Programmable Latency, Burst Length, Wrap Sequence (Sequential Interleave) Auto Refresh (CBR) Self R Abstract: .. Input capacitance A0 ~ A 11 , BA0 ~ BA 1 , RAS , CAS , WE CIN 1 29 34 pF. Input capacitance CKE0 CIN 2 .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: pc2100* SSTL-2	235.77 Kb	13 Pages	Original

First line: V826516K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE CILETIV LESOM Abstract: .. Input capacitance A0 ~ A 11 , BA0 ~ BA 1 , RAS , CAS , WE CIN 1 29 34 pF. Input capacitance CKE0 CIN 2 .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V826516K04SATG	249.17 Kb	13 Pages	Original

First line: V54C33332G2V 166/143 VOLT ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit V54C33332G2V Abstract: .. With A8 being low, the BA is used select bank to precharge. The precharge command can be imposed .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V54C33332G2V	116.87 Kb	23 Pages	Original

First line: V54C333322V 200/183/166 VOLT ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit V54C333322V Abstract: .. With A8 being low, the BA is used select bank to precharge. The precharge command can be imposed .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V54C333322V	122.09 Kb	21 Pages	Original

First line: BD 338 cd 5888 s 53cf92* ba 5835 CD 5888 CL-CR3490 Preliminary Product Bulletin Fully-compatible with Double Density CD-ROM/-R/-RW specification write speeds read speeds Integrates CD-ROM decoder, CD-ROM encoder, CIRC encoder, modulator, ATIP decoder, buffer manager, interface SCSI protocol Firmware Abstract: .. BA[0:11] BD[0:7] DD7. DD8. DD9. DD5. DD10. DD4. DD11. DD3. DD12. DD2. DD13. DD1. DD14. DD0. DD15. HRESET* DMAREQ .. Burlington, MA TEL: 781/229-5835 FAX: 781/229-5888. International. FRANCE Paris TEL: 33/1-48 .. Tags: ba 5835 53cf92* cd 5888 s BD 338 D 5888 s CD 5888 53CF94 CL-CR3490	55.84 Kb	4 Pages	Original

First line: sdram pcb gerber V826532K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. , BA. 0. ~ BA. 1. , RAS, CAS, WE CIN. 1. 60 75 pF. Input capacitance CKE. 0. CIN. 2. 40 48 pF. Input capacitance .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: sdram pcb gerber V826532K04SATG	112.81 Kb	15 Pages	Original

First line: V826516G04S 200-PIN UNBUFFERED SODIMM VOLT Abstract: .. , BA. 0. ~ BA. 1. , RAS, CAS, WE CIN. 1. 36 45 pF. Input capacitance CKE. 0. CIN. 2. 36 45 pF. Input capacitance .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: dll 1501 V826516G04S	112.86 Kb	14 Pages	Original

First line: pc2100u* pc2100* V827316K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. , BA. 0. ~ BA. 1. , RAS, CAS, WE CIN. 1. 29 34 pF. Input capacitance CKE. 0. CIN. 2. 29 34 pF. Input capacitance .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: pc2100u* pc2100* V827316K04SATG	280.34 Kb	13 Pages	Original

First line: V827332K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Unbuffered 33,554,432 Organization SDRAM Modules Utilizes High Performance SDRAM TSOPII-66 Packages Single +2.5V 0.2V) Power Supply Programmable Latency, Burst Length, Wrap Sequence (Sequential Interleave) Auto Refresh (CBR) Self Refresh I Abstract: .. Input capacitance A0 ~ A 11 , BA0 ~ BA 1 , RAS , CAS , WE CIN 1 60 75 pF. Input capacitance CKE0 CIN 2 .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: BA 585 SSTL-2	257.56 Kb	14 Pages	Original

First line: mark DM V826432S04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Abstract: .. , BA. 0. ~ BA. 1. , RAS, CAS, WE CIN. 1. 60 75 pF. Input capacitance CKE. 0. CIN. 2. 40 48 pF. Input capacitance .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: mark DM V826432S04SATG	224.44 Kb	15 Pages	Original

First line: pc2100* V827332U04S VOLT HIGH PERFORMANCE REGISTERED SDRAM MODULE 16Mx8 16Mx8 Abstract: .. Input capacitance A0 ~ A 11 , BA0 ~ BA 1 , RAS , CAS , WE CIN 1 60 75 pF. Input capacitance CKE0 CIN 2 .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: pc2100* AF-7f* V827332U04S	284.51 Kb	14 Pages	Original

First line: V54C3128804VAT HIGH PERFORMANCE 143/133/125MHz VOLT SYNCHRONOUS DRAM BANKS 4Mbit System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) Latency Clock Access Time (tAC2) Latency Abstract: .. BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 T18 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C3128804VAT	358.42 Kb	43 Pages	Original

First line: V54C3256164VBUC/T POWER 256Mbit SDRAM VOLT, 54-BALL 54-PIN TSOPII CILETIV LESO System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) Latency Clock Access Time (tAC2) Latency Abstract: .. BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 T18 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C3256164VBUC T	543.08 Kb	45 Pages	Original

First line: V54C2128164VAT 128Mbit SDRAM VOLT, TSOP System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) Latency Clock Access Time (tAC2) Latency Abstract: .. BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 T18 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: 7v 1-5 bs V54C2128164VAT	707.75 Kb	43 Pages	Original

First line: V54C3128(16/80/40)4V(BGA) 128Mbit SDRAM VOLT, PACKAGE CILETIV LESO Abstract: .. BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 T18 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: 80-40 32M X 8 speed ram 2048 x 16 x 4 banks V54C3128	467.16 Kb	45 Pages	Original

First line: V55C2128164V(T/B) 128Mbit LOW-POWER SDRAM VOLT, TSOP PACKAGE CILETIV LESO System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) Latency Clock Access Time (tAC2) Latency Clock Access Time (tAC1) Latency Abstract: .. BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 T18 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V55C2128164V	507.21 Kb	44 Pages	Original

First line: V54C3128(16/80/40)4V(BGA) 128Mbit SDRAM VOLT, PACKAGE Abstract: .. CAS WE BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: MARK T11 AD 80-40 V54C3128	618.24 Kb	45 Pages	Original

First line: V54C3128164VAT HIGH PERFORMANCE 166/143/133/125MHz VOLT SYNCHRONOUS DRAM BANKS 2Mbit System Frequency (fCK) Clock Cycle Time (tCK3 Clock Access Time (tAC3) Latency Clock Access Time (tAC2) Latency Clock Access Time (tAC1) Latency 10.5 Abstract: .. CAS WE BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C3128164VAT	552.16 Kb	43 Pages	Original

First line: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz VOLT SYNCHRONOUS DRAM BANKS 2Mbit System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) Latency Clock Access Time (tAC2) Latency Abstract: .. BA. DQM. 9.1 AC Parameters for Write Timing. T2 T3 T4 T0 T1 T6 T7 T8 T9 T5 T11 T12 T13 T14 T10 T16 T17 T18 .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C3128164VAT	365.93 Kb	43 Pages	Original

First line: V58C265164S Mbit SDRAM VOLT System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RAS precharge time tRP .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: dll 1501 V58C265164S	446.62 Kb	44 Pages	Original

First line: V58C365164SAT HIGH PERFORMANCE VOLT SDRAM BANKS 1Mbit System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RAS precharge time tRP .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V58C365164SAT	438.8 Kb	44 Pages	Original

First line: V58C265164S HIGH PERFORMANCE VOLT SDRAM BANKS 1Mbit System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RAS precharge time tRP .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V58C265164S	450.82 Kb	44 Pages	Original

First line: dll 1501 V58C265804S HIGH PERFORMANCE VOLT SDRAM BANKS 2Mbit System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RAS precharge time tRP .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: dll 1501 V58C265804S	454.36 Kb	44 Pages	Original

First line: V58C265404S HIGH PERFORMANCE VOLT SDRAM BANKS 4Mbit System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) Abstract: .. A new Bank Activate BA command may be issued to the same bank after the RAS precharge time tRP .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V58C265404S	388.27 Kb	44 Pages	Original

First line: V826616J24S VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE CILETIV LESO Abstract: .. 0.10 M C BA. 0.1496. 3.00 0.118. 2.00 0.0787. 4.00 0.1575. 1.25 ± 0.006 31.75 ±0.15 4.00 2X .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V826616J24S	326.61 Kb	13 Pages	Original

First line: V827332U04S VOLT HIGH PERFORMANCE REGISTERED SDRAM MODULE 16Mx8 16Mx8 Abstract: .. 0.10 M C BA M. 0.1496. 3.00 0.118. R 2.00 0.0787. 4.00 0.1575. 0.157 Max. 0.050 ± 0.0039 1.270 ± 0 .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: V827332U04S	137.84 Kb	14 Pages	Original

First line: V826532K04SATG VOLT HIGH PERFORMANCE UNBUFFERED SDRAM MODULE Device Usage Chart Operating Temperature Range Abstract: .. Input capacitance A0 ~ A 11 , BA0 ~ BA 1 , RAS , CAS , WE CIN 1 60 75 pF. Input capacitance CKE0 CIN 2 .. FAX: 886-3-566-5888. SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 .. Tags: RT 1530 V826532K04SATG	278.28 Kb	14 Pages	Original

First line: CILETIV LESOM V54C365324V Clock Frequency (tCK) Latency Cycle Time (tCK) Access Time (tAC V54C365324V 200/183/166/143 VOLT ULTRA HIGH PERFORMANCE SDRAM BANKS 512Kbit Abstract: .. With A8 being low, the BA is used select bank to precharge. The precharge command can be imposed .. NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888. FAX .. Tags: V54C365324V	235.94 Kb	21 Pages	Original

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