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TSAL7200
GaAs/GaAlAs Emitting Diode Package
TSAL7200 high efficiency infrared emitting diode GaAlAs GaAs technology, molded clear plastic package. comparison with standard GaAs GaAs technology these emitters achieve more than radiant power improvement similar wavelength. forward voltages current high pulse current roughly correspond values standard technology. Therefore these emitters ideally suitable high performance replacements standard emitters.
8389
Features
Extra high radiant power radiant intensity High reliability forward voltage Suitable high pulse current operation Standard package Angle half intensity Peak wavelength Good spectral matching photodetectors
Applications
Infrared remote control units with high power requirements Free transmission systems Infrared source optical counters card readers source smoke detectors
Absolute Maximum Ratings
Tamb 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol IFSM Tamb Tstg RthJA Value -55.+100 -55.+100 Unit
tp/T 0.5,
5sec, from case
Document Number 81012 Rev. 20-May-99
www.vishay.de FaxBack +1-408-970-5600
TSAL7200
Vishay Telefunken Basic Characteristics
Tamb 25_C Parameter Forward Voltage Temp. Coefficient Reverse Current Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient Angle Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient Rise Time Fall Time Virtual Source Diameter Test Conditions 100mA MHz, method: encircled energy Symbol TKVF TKfe 1.35 -1.3 -0.6 Unit mV/K mW/sr mW/sr nm/K
TKlp
Typical Characteristics (Tamb 25_C unless otherwise specified)
Power Dissipation Forward Current
RthJA
RthJA
11986
7957
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Power Dissipation Ambient Temperature
Figure Forward Current Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
Document Number 81012 Rev. 20-May-99
TSAL7200
Radiant Intensity mW/sr
13601
1000
Forward Current
IFSM Single Pulse 0.01 0.05
10-1 10-2
11987
10-1 Pulse Duration Forward Current
Figure Pulse Forward Current Pulse Duration
Forward Current
Figure Radiant Intensity Forward Current
1000
Radiant Power
13602
0.001
13600
Forward Voltage Forward Current
Figure Forward Current Forward Voltage
Frel Relative Forward Voltage
Figure Radiant Power Forward Current
7993
7990
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Relative Forward Voltage Ambient Temperature
Figure Rel. Radiant Intensity\Power Ambient Temperature
Document Number 81012 Rev. 20-May-99
www.vishay.de FaxBack +1-408-970-5600
TSAL7200
1.25
Relative Radiant Power
Relative Radiant Intensity
0.75
0.25
14291
Wavelength
14329
Figure Relative Radiant Power Wavelength
Figure Relative Radiant Intensity Angular Displacement
Dimensions
14340
www.vishay.de FaxBack +1-408-970-5600
Document Number 81012 Rev. 20-May-99
TSAL7200
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Document Number 81012 Rev. 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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