TLP155E
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TLP155E - TLP155E
TLP155E
GaAAsLED
TLP155E
MOSFET IGBT
TLP155E GaAAs IGBT MOSFET
-0.15
+0.25
(tpLH/tpHL) c-UL IOP=±0.6 -40100 IFLH=7.5mA
4.55
+0.25 -0.15
0.15
1.27 2.54
200ns ±15kV/s
3750 Vrms UL1577 No.E67349 Component Acceptance Service
JEDEC JEITA 11-4L1 0.08
No.E67349 (V4) 6000Vpk EN60747-5-2 "(V4)
SHIELD
EN60747-5-2
707Vpk
4:GND 5:VO 6:VCC
(M1) (M2)
SHIELD
2010-11-01
TLP155E
(Ta=25)
IF/Ta IFPT (10s) IOPH IOPL Topr Tstg Tsol Vrms -0.63 -0.6 -40100 -55125 3750
(Ta92)
(AC,1min, R.H.60%,Ta=25)
(//)
1s300 kHz, VCC=20V, Ta=-40~100 80ns, IOPH -0.25A, IOPL 0.25A, VCC=20V, Ta=-40~100
IFLH VFHL IOPH/ IOPL Topr ±0.2
0.5s
2010-11-01
TLP155E
Ta=-40100°C)
VF/Ta IOPH1 IOPH2 IOPL1 IOPL2 ICCH ICCL IFLH VFHL MHz, V6-5 V6-5 V5-4 V5-4 -100 1.40 1.55 -1.8 -0.5 1.80 -0.2 -0.4 mV/°C
VO=Open
Ta=25 50s,
1MHz R.H.60%,VS 500V
Vrms
3750
10000 10000
2010-11-01
TLP155E
()(, Ta=-40100°C)
Ta=25 Ta=25 f=250kHz Duty=50% =1000 Ta=25 6(VCC) 4(GND) 0.1F ON/OFF (tpHL tpLH) Vp-p (min) (max)
tpLH
tpHL tpLH tpHL tpsk
kV/s
tpHL-tpLH (10-90%) (90-10%)
2010-11-01
TLP155E
IOPH IOPL V6-5 IOPH 0.1F V5-4 0.1F IOPL
0.1F
0.1F
*VOH =VCC-VO
ICCH ICCH 0.1F
ICCL ICCL 0.1F
2010-11-01
TLP155E
IF=10mA (P.G)
(f=250kHz, duty=50%, tr=tf=5ns)
tpLH tpHL
1000
0.1F
(CMH)
2010-11-01
TLP155E
2)() 15060120 26010 260103503
2010-11-01
TLP155E
5354575%
2010-11-01
TLP155E
(TPL) (TPR)
TLP155E (TPL)
3000 3000
2010-11-01
TLP155E
40mm
0.05 +0.1
2.95
±0.1 +0.1 -0.3 +0.1 -0.3
1.75
12.0
2010-11-01
TLP155E
13.5 17.5
(3000
TLP155E (TPL) 3000
(3000
2010-11-01
TLP155E
GaAs RoHS RoHS
2010-11-01
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