TIC225A TIC225B TIC225C TIC225D TIC225E TIC225M TIC225N TIC225S

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TIC225A TIC225B TIC225C TIC225D TIC225E TIC225M TIC225N TIC225S

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TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
Sensitive gate triacs Peak Glass Passivated Wafer Off-State Voltage (Quadrants Compliance ROHS
DESCRIPTION This device bidirectional triode thyristor (triac) which triggered from off-state on-state either polarity gate signal with main Terminal either polarity. ABSOLUTE MAXIMUM RATINGS Value
VDRM IT(RMS) ITSM ITSM PG(AV) Tstg
Symbol
Ratings
Unit
Repetitive peak off-state voltage (see Note1) Full-cycle on-state current below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation below) 85°C case temperature (pulse width Average gate power dissipation below) 85°C case (see Note5) Operating case temperature range +110 Storage temperature range +125 Lead temperature from case seconds
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TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S
Notes: These values apply bidirectionally value resistance between gate Main Terminal This value applies 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly 110°C case temperature rate mA/°C. This value applies 50-Hz full-sine-wave when device operating below) rated value on-state current. Surge repeated after device returned original thermal equilibrium. During surge, gate control lost. This value applies 50-Hz half-sine-wave when device operating below) rated value on-state current. Surge repeated after device returned original thermal equilibrium. During surge, gate control lost. This value applies maximum averaging time
THERMAL CHARACTERISTICS Symbol
Ratings
Junction case thermal resistance Junction free thermal resistance
Value
62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak offstate current Gate trigger current
Test Condition(s) Rated VDRM, 110°C Vsupply tp(g) Vsupply tp(g) Vsupply tp(g) Vsupply tp(g) Vsupply tp(g) Vsupply tp(g) Vsupply tp(g) Vsupply tp(g) Vsupply initiating Vsupply initiating -100
-4.5 -3.5 11.7 -0.8 -0.8 -4.7 ±1.6 ±1.5
Unit
±2.1 V/µs ±4.5
Gate trigger voltage
Holding current
Vdv/dt dv/dt©
Latching current Peak on-state voltage Critical rate rise off-state voltage Critical rise communication voltage
Vsupply (seeNote7) Vsupply (seeNote7) (see Note6) VDRM Rated VDRM, 110°C VDRM Rated VDRM, ITRM 70°C
voltages whit respect Main Terminal Page
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S
Note This parameters must measured using pulse techniques, 1ms, duty cycle voltage-sensing contacts, separate from courrent-carrying contacts located within 3.2mm (1/8 inch) from device body. Note triacs triggered 15-V (open circuit amplitude) pulse supplied generator with following characteristics 100, tp(g) 15ns, kHz.
MECHANICAL DATA CASE TO-220
Main Terminal Main Terminal Gate
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TIC225A TIC225B TIC225C TIC225D TIC225E TIC225M TIC225N TIC225S

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