TFK 450 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
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1 - 50 of about 50 for TFK 450 |
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First line: 74915 TFK 450 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Klemmschaltungen hohen Betriebsspannungen Applications: Clamping circuits colour TV-receivers, with high supply voltage Abmessungen Dimensions CATHODE U-26-"J --7.2-- --26-- Case Abstract: .. [_ = konstant constant MhJA 450 °C/W Kenngrößen Characteristics tj = 25 °C .. , iR = 1 mA 1 V 0,08 1 |JA 3,4 pF 2 pF 350 500 ns 70 BA173 -w- HF 0,1 iF 74 1014 Tfk J?L= 2kß bzw. 33k £2 U. .. Tags: TFK 450 74915 BA173* D74 DIODE datasheet abstract.. |
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First line: scw 61 TRANSISTOR BC 158 BC 458 BCD Schalter transistor BC 458 Gestempelt SCWGIA BCW61B BCX716 BCX71J filli ^Qff Marked with: UUlV Silicon Epitaxial Planar Transistor Anwendungen: Vorstufen Schalter Dick- Applications: stages switches thick thin film circuits Besondere Merkmale: Features: Gruppen so Abstract: .. substrat auf Keramik 30xi2xl mm ^thJA 450 °C/W on ceramic Kenngrößen Characteristics 'amb .. V -ÃfcE—< 800 HA 600 400 20Å’ 75 1676 Tfk I I -tfBI = 0.62 V 0, si V 0. ¡0 V r I I 0,59 V I I 0,58 V I 2 3 4 V .. Tags: transistor BC 458 BCD Schalter BC 458 TRANSISTOR BC 158 scw 61 datasheet abstract.. |
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First line: U 237 BG AF 238 tfk 238 TFK 237 BG TFK 727 BC108 BC109 Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon Epitaxial Planar Transistors Anwendungen: NF-Vor- Treiberstufen Applications: driver stages Besondere Merkmale: 109, rauscharme Vorstufen Verlustleistung Abstract: .. 109 71 7 7 3 Tfk > \ > V \ > \ > V \ \ \ > V > \ v \ \ V 50 100 150 °C 'amb —1 'tot 300 mW 200 100 II II I 75 0 4 4, Tfk BC .. BC 237, BC 238, BC 239 hFE 200 290 450 Gruppe C: BC108, BC109 , con „.„ Group BC 238^ BC 239 AFE 420 520 .. Tags: TFK 727 TFK 237 BG tfk 238 AF 238 U 237 BG datasheet abstract.. |
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First line: TFK BPW 20 TFK 925 TFK BPW 41 N diode TFK BPW 41 N tfk 731 GaUliumarsenid-Lumineszenzdiode Ga>4s Infrared Emitting Diode Anwendung: Strahlungsquelle nahen Infrarot-Bereich Application: Radiation source near infrared range Besondere Merkmale: Metallsockel Kunststofflinse Sehr Abstrahlwinkel Besond Abstract: .. „thJA 450 °c/w Junction ambient Sperrschicht-Gehäuse ÄthJC 100 °c/w Junction case .. Tfk 1 A PrÃ1⁄4fling Specimen O + 45 V 'Ph Kanal I Channel I PIN-Fotodiode [JSOD [J Kanal II Channel .. Tags: tfk 731 TFK BPW 41 N TFK BPW 41 N diode TFK 925 TFK BPW 20 datasheet abstract.. |
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First line: 7447n BTP-128-400* NAUKOWO-PRODUKCYJNE CENTRUM CEMI ELEMENTY UKtADY SCALONE LISTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFERENCYJNA zawiera wykaz elektronicznych zaleconych stosowanla! produ-kowanych aktualnle, przewidzianych produkcji latach 1982/84 oraz importowanych RWPG ramach Abstract: .. 1,5 1 BA 158 - Tfk n n CE 01 3 BA 159 WT-80/CEMI/A-67 1000*/ 0,4 1.5 1 BA 159 - Tfk it ti CE 01 4 BYP 150-50 .. trr= 450 ns 13 BYP 671-600 ' - 600 ' ?x/ 1,25 5 BYX 71-600 - Ph 1983 n 14 BYP 401-50 WT-79/CEHI/A-57 .. Tags: BTP-128-400* 7447n BTP-128-400 BTP 129/650 74151N datasheet abstract.. |
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First line: TFK 111 B TFK 450 TFK 148 Gestempelt BCWBOB BCW60C BCW60D Marked with: Silicon Epitaxial Planar Transistor Anwendungen: Vorstufen Schalter Dick- Applications: stages switches thick thin film circuits Besondere Merkmale: Features: Gruppen sortiert groups selected Complementary technische Daten Preli Abstract: .. substrat auf Keramik 30x12x1 mm on ceramic Min. Typ. Max. HhJA MhJA 700 °C/W 450 °C/W Kenngrö .. 1S 11$1'5 Tfk. 'amb" 25"C. ~AIH-+--1-+-+4~~~+--1-+-+4~+-+--1~ 0,66 V. 6 O,!;9V. I 0.65 V. 4 0,57 V. I .. Tags: TFK 148 TFK 450 TFK 111 B datasheet abstract.. |
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First line: TFK 111 B TFK U 111 B tfk 731 Silicon Epitaxial Planar Transistors Anwendungen: Allgemein Applications: General amplifiers Besondere Merkmale: Verlustleistung Gruppen sortiert Abstract: .. 450 °C/W 150 °C/W Statische Kenngrößen DC characteristics 'amb = 25 °C' fa .. 701 2t Tfk 211~ 3,11"" ","'1"'" 3,0"" I I 2,1I~A I .. 20"" 8 111"" 80 I I I 2,O .. Tags: tfk 731 TFK U 111 B TFK 111 B datasheet abstract.. |
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First line: TFK diode diode tfk 1N41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: Features: Kann Bauelement delivered "Qualified semi- geliefert werden conductor device" Abmessungen Dimens Abstract: .. 450 200 150 440 500 200 -65..+200 V V mA mA mA mA mW mW °C °C B2/V.1.17/0474 A2 205 1N41510 .. Tfk 1000 IJ=100°C V j 1000 UR =50 V II nA C- nA I/" V 100 .. ~ ~ II 25°C 100 .. Tags: diode tfk TFK diode datasheet abstract.. |
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First line: TFK ba204 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Allgemein Applications: General purpose Abmessungen Dimensions KATHODE CATHODE 01.9 00,55 Case Abstract: .. Lagerungstemperaturbereich Storage temperature range U RRM 'FSM 7FRM 'FAV rstg 60 50 2 450 .. Tfk 7.4 g8' TIl 300 mA 'I = 100 OC I I 'I 100 / ~, V 100 nA 'j=25 'c ~ 30 II I I .. Tags: TFK ba204 datasheet abstract.. |
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First line: 107 bc bc 307 bc 750 tfk 731 fr 309 Silicon Epitaxial PlanarAF Transistors Anwendungen: NF-Vor- Treiberstufen Applications: driver stages Besondere Merkmale: 179, rauscharme Vorstufen Verlustleistung Gruppen sortiert 177, 178, 179, 307, 308, sind 107, 108, 109, 237, 238, Abstract: .. 177, BC 178, BC 179 Group BC 307, BC 308, BC 309 FE 200 290 450 Gruppe C: BC178, BC179 Group BC 308, BC .. 73145 Tfk I I 1 ,,' V· -1-- Scattering limit liS ~A II I 1 nA 800 IJ.A 8,S j ~A L1 ~A I I I 7,S .. Tags: fr 309 tfk 731 bc 750 bc 307 107 bc datasheet abstract.. |
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First line: 73211 BSW89 Silicon Epitaxial Planar Switching Transistor Anwendungen: Schalter Applications: Switches Besondere Merkmale: Hohe Gruppen sortiert High current gain groups selected Abstract: .. 0,01 0,1 300 200 100 10 mA '0,1 "ce = 5v / = 100 MHi '.mb= 25 "C 1 7 7140 3 Tfk 10 mA 424 BSW89 Silizium .. BSW89 WJJ··500~"-" 450 I..b ~AlA'1 400 72210 me '25 'C il'1i" 10- I"" I-" ~A V 80 mA l .. Tags: 73211 datasheet abstract.. |
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First line: IC 72131 TFK 111 B TFK U 111 B tfk 325 Germanium Mesa Transistor Anwendungen: Vor-, Misch- Oszillatorstufen Applications: Pre, mixer oscillator stages Besondere Merkmale: 17,5 <7,5 Abstract: .. V, -/c = 1 mA, /= 450 kHz CUre 0,45 pF Ruckwirkungszeitkonstante Feedback time constant -UCB = 10 .. 0 2 mS Re .vrb - 7 AF 106 f lm 'fb> 80 mS 60 40 20 7273 4 Tfk 10 V 'amb = 25 0 Ã J S / ''I \ - 5 mA f 40 MHzl .. Tags: tfk 325 TFK U 111 B TFK 111 B IC 72131 datasheet abstract.. |
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First line: Transistor RKU AF109R Germanium-PNP-Mesa-F-Transistor Germanium Mesa Transistor Anwendungen: Geregelte Vorstufen Applications: Controlled pre-stages Besondere Merkmale: 16,5 <4,8 Regelbereich Abstract: .. 2 110 |jA 30 75 pA 36 jA 66 pA 320 380 430 mV 320 380 430 mV 360 405 450 mV 20 50 55 75 Dynamische Kenngrà .. 72739 Tfk , 1\ ~ Ust t 72740 Tfk dB I 150 rnV \ o Vee = 12 V MH~: i= 200 MHz Vee = 12 V 1 .. Tags: Transistor RKU datasheet abstract.. |
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First line: 400 AMP CIRCUIT BREAKER Cutler-Hammer LD, Westinghouse Motor protection relay westinghouse breaker EBMB Circuit Breakers Enclosures Div. Groups B,C,D Div. Groups E,F,G Div. Groups NEMA 3,3R,4,7BCD,9EFG,12 Explosionproof Dust-Ignitionproof Raintight Locations Watertight Abstract: .. 25, 30, 35, 40, 45, 50, 60, 70, 80, 90, 100, 110, 125, 150 225/250 Amp Frame JD, JDB, KAL, TFJ, TFK .. , 175, 200, 225, 250, 300, 350, 400, 450, 500, 600, 700, 800. – available with Lightning Service TM .. Tags: westinghouse breaker Westinghouse Motor protection relay Cutler-Hammer LD, 400 AMP CIRCUIT BREAKER WESTINGHOUSE ELECTRIC motor ac datasheet datasheet abstract.. |
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First line: 400 AMP CIRCUIT BREAKER westinghouse breaker 400a westinghouse breaker EBMB Series Circuit Breakers Enclosures Div. Groups Div. Groups Div. Groups NEMA 7BCD, 9EFG, Explosionproof Dust-Ignitionproof Raintight Locations Watertight Abstract: .. , 30, 35, 40, 45, 50, 60, 70, 80, 90, 100, 110, 125, 150 225 / 250 Amp Frame JD, JDB, KAL, TFJ, TFK ✪▲ .. Frame LD, TJK ♠ – 250, 300, 350, 400, 450, 500, 600 800 Amp Frame MD, TKMA ♥ – 300, 350, 400, 450 .. Tags: westinghouse breaker westinghouse breaker 400a 400 AMP CIRCUIT BREAKER Cutler-Hammer LD, KD 2010 datasheet abstract.. |
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First line: 74124* TRK 1703 55/C. Silicon epitaxial planar diodes Anwendung: Spannungsstabilisierung Applications: Voltage stabilisation Besondere Merkmale: Scharfer Abbruch Sperrkennlinie Niedriges Sperrstromniveau Sehr Geringes Rauschen engeren Toleranzen lieferbar Abstract: .. 6,0 -0, 5. .+ 5 < 25 < 450 < 100 1 < 2 1 BZX 55/C 6 V 2 5,8 .. 6,6 3. 6 < 10 < 200 < 100 2 < 2 2 BZX 55/C 6 V 8 6,4 .. 7 .. 741244 Tfk. Py =!500mW. Z. 80 mA. , 1"\ tamb=25"C. Py = SOO mW t. mb=2SoC. 80. 30. r-. I.. ~ I' 40 20. .. I' 20 .. Tags: TRK 1703 74124* bzx 50 13 BZX TFK 19 001 datasheet abstract.. |
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First line: TFK 111 B BSS 60 TFK U 111 B Silicon Epitaxial Planar Switching Transistors Anwendungen: Hochstromschalter, Relaistreiber, Strom Applications: High current switches, relay drivers, power amplifiers, current Besondere Merkmale: Features: Hohe Sperrspannung High reverse voltage Verlustleistung Power Abstract: .. Turn-on time Ausschaltzeit 'off2' 450 Turn-off time BSS 46 -/c = 1 A, -/B1 = /B2 = 50 mA, tamb = 25 .. ton' toff 121026 Tfk ~ 4 A II 800 rnA I 110mA f-O.Olm.I tp. 0,3 II 72102& '"" lamb. 25 °c .. Tags: TFK U 111 B BSS 60 TFK 111 B datasheet abstract.. |
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First line: BPW13* CQY 65 TFK 940 CQY34* TFK BPW 41 N GaAs Infrared Emitting Diodes Anwendung: Strahlungsquelle nahen Infrarot-Bereich Application: Radiation source near infrared range Besondere Merkmale: Hermetisches Planfenster, Linse, Linse, Hohe Abstract: .. thJA cthJC 450 °C/W 150 °C/W Optische und elektrische Kenngrößen Optical and .. II so a Oscilloscope ^Lì1Mfl CL< 20 pF 76 1 4 6 5 Tfk Meßschaltung fÃ1⁄4r: Test circuit for: f f 48 .. Tags: TFK BPW 41 N CQY34* TFK 940 CQY 65 BPW13* datasheet abstract.. |
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First line: BF314 LT 7202 Silicon Epitaxial Planar Transistor Anwendungen: VHF-Eingangsstufen Basisschaltung Applications: input stages common base configuration Besondere Merkmale: Kleine Intermodulationsabstand Small feedback capacitance Abstract: .. = 3 mA, Yc = 6,7 mS-j 6,7 mS, / = 100 MHz fj "Ã1⁄4rb 450 MHz 0,1 0,13 pF dB JCB = 10 V, lc = 5 mA, rG = 6,7 mS-j .. 6 mA Ir 7202 » Tfk i f UCB = 3..10 V / * 100 MHi — / / / r '•mb / / / y / / "fb 200' 160 ° 120' 80 40 .. Tags: LT 7202 BF314 datasheet abstract.. |
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First line: Germanium Mesa Transistor Anwendungen: Vor-, Misch- Oszillatorstufen Applications: Pre, mixer oscillator stages Besondere Merkmale: >12,5 Power gain >12.5 Noise figure Abstract: .. = 2 mA, / = 100 MHz RÃ1⁄4ckwirkungskapazität Feedback capacitance -UCB = 10 V, -/c = 2 mA, / = 450 .. R^ so, rp " " daß rn = 2 kQ Coupled ai R^ so that r„ = 2 kQ 7 5 57 9 Tfk MelBschaltung fur: Test circuit .. Tags: datasheet abstract.. |
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First line: 4148 4149 -1N4446 4447 4448 4449 Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches elektrischen Daten entsprechen Dioden: 4148 4149 4449 Electrically data resemble diodes: 1N914A IN4446 4447 Abstract: .. 2000 450 200 150 440 500 200 -65..+200 mA mA mA mA mW mW °C °C B 2/V.1.17/0474A2 201 1N .. Tfk 143S5 Tt\ 'j=2SoC 1 I ~ I 100 nA Streugrenze V""" IF-100mA Scattering limit 0.8 .. Tags: din 4148 TFK diodes 914 N 4148 din 4448 diode t 4148 datasheet abstract.. |
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First line: TFK diodes TFK BPW 75 TFK 451 Silizium-Foto-Lawinendiode Silicon Avalanche Photodiode Anwendung: Breitband-Detektor Strahlungsdemodulation schneller Signale, z.B. Lasern GaAs-Lumlneszenzdioden. Detektor Technik optischen z.B. Glasfaserleitungen. Application: Wide band detector demodulation fast sign Abstract: .. 450..950 140 20 200 170 0,14 200 1,2 50 nA V %/ °C % GHz PF 1 Der spannungsabhanglge Verstà .. Tfk. t 80 % 75 1058 Tftt. II. II 60. I'" t-.. to-. I"- IJ. II 10 40. 1/ Ll.-L-- 20. II 1. o. 40. 80. 120. 160 V. o. 400. 600 .. Tags: TFK 451 TFK BPW 75 TFK diodes datasheet abstract.. |
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First line: sensor lamb BPW35* BPW35 BPW35 Silizium-Planar-PN-Foto-Element Silicon Planar Photovoltaic Cell Anwendung: Sensor Application: Sensor light measuring purposes Besondere Merkmale: strahlungsempfindliche Blauempfindlichkeit UV-Bereich Bereiche sichtbaren nahen infraroten Strahlung geeignet Kein Abstract: .. |jA 200 220 |jA 240 300 nA/lx 0,1 %/ °C 750 nm 450..950 nm 250 nA 10 nF 200 BPW35 201 BPW35 202 BPW35 .. Tfk. s A r.1 = .1.!..3.L sU.p 10. ,r, 1\ f'A == 0 lamb'" 25°C. 1,0 ,/ V 1\ \ MQ 0,8. J. I. 1\ 1\ \ -. 0,6. II. 1. 1 .. Tags: BPW35 BPW35* sensor lamb datasheet abstract.. |
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First line: tfk 140 BY207 ku 202 202/. Silizium-Mesa-Dioden Silicon Mesa diodes Anwendungen: Schneller Gleichrichter Schalter zeilenfrequenten Betrieb Schaltnetzteile. Applications: Fast rectifier switch example TV-line output circuits switch mode power supply. Wesentliche Merkmale: Features: Hohe Sperrspannung Abstract: .. /2 ^RRM 250 V BY 202/3 ^RRM 350 V BY 202/4 yRRM 450 V BY 202/5 ^RRM 550 V BY 202/6 ^RRM 650 V B 2/V. 1.17 .. 741313 Tfk. _ C RWM '50V R thJA !5 70 °C/W, Fig.2. 7=0,5. I.. 100 °C/W 50. lamb. 125"C lOOoS 75"C 600C .. Tags: ku 202 BY207 tfk 140 datasheet abstract.. |
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First line: TFK U 111 B Germanium-PNP-HF-Transistor Germanium Transistor Anwendungen: Vor-, Misch- Oszillatorstufen Applications: Pre, mixer oscillator stages Besondere Merkmale: <8,8 Abstract: .. V, -Ic = 1 mA, / = 450 kHz CUre 0,25 pF Ruckwirkungszeitkonstante Feedback time constant -UCB = 10 .. - CB Ô + 7 557 8 Tfk Meßschaltung: Test circuit for: ' pt> G„h. F, ab ' siehe Meßschaltung see .. Tags: TFK U 111 B datasheet abstract.. |
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First line: IC 7414 tfk 135 TRANSISTOR BC 135 TRANSISTOR BC 136 TRANSISTOR BC 136 Silicon Epitaxial Planar Transistors Anwendung: Rauscharme Vorstufen Application: noise prestages Besondere Merkmale: Verlustleistung Gruppen sortiert Kleine Rauschspannung Eingang Transistors Abstract: .. , -7q = 2 mA Gruppe /Group A Gruppe/Group B Gruppe/Group C *FE AFE *FE 110 200 420 180 290 520 220 450 .. vollage amplification 75 4 82 Tfk Meßschaltung fÃ1⁄4r: Test circuit for: Vierpol Kenngrà .. Tags: TRANSISTOR BC 136 TRANSISTOR BC 136 TRANSISTOR BC 135 tfk 135 IC 7414 datasheet abstract.. |
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First line: Silicon Epitaxial Planar Transistors Anwendungen: Allgemein Applications: General amplifiers Besondere Merkmale: Verlustleistung Gruppen sortiert Power dissipation Abstract: .. ÄthJA 450 °C/W *thJC 150 °C/W Statische Kenngrößen DC characteristics 'amb .. 73145 Tfk I I SIB lA e 8.5 |iA < I 5 nA t I - f I I f 5,5 |1A I I I 3,5 UA 2 ,5 l'I TI -Ig » 1,5 |lA '.ml. "25 .. Tags: datasheet abstract.. |
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First line: 74140* Silicon Epitaxial Planar Transistors Anwendung: Application: Rauscharme Vorstufen noise prestages Besondere Merkmale: Verlustleistung Gruppen sortiert Abstract: .. V, /q = ,2 mA Gruppe/Qroup 8 Apg 200 290 450 Grappe/Group C /?FG 420 520 800 Dynamische Kenngrà .. for a constant voltage amp/if icahon 75 4 82 Tfk Meßschaltung fÃ1⁄4r: „ Test circuit for: r .. Tags: 74140* tfk 135 datasheet abstract.. |
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First line: TFK 03 diode s .* tfk TFK infrared diodes IR diodes TFK 4 diode 178 tfk TSML3710 GaAs/GaAlAs Infrared Emitting Diode Package Abstract: .. Thermal Resistance Junction/Ambient RthJA 450 K/W. www.vishay.com. 2. Document Number 81075 .. Label: Tfk Type Group Tape Code Production Code Quantity. °. www.vishay.com. 8. Document Number .. Tags: diode 178 tfk IR diodes TFK 4 TFK infrared diodes diode s .* tfk TFK 03 TFK 450 TFK 101 TSML3710 |
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First line: AAAE marking marking AAAE pcni rkm 49 MARKING rkm High Voltage Current Regulators Preliminary Data Sheet IXYS series high voltage current regulators consists nonswitchable, 2-terminal, current regulators. Series 450/350 I^EmF Ravk Abstract: .. IXC Series V^h = 450/350 V I^EmF = 2 - 100 mA Ravk = 9 - 900 kΩ Ω Ω Ω Ω TO-252 AA IXCY TO-220 AB .. ëçìêÅÉ= çÑ= ~= ÜáÖÜäó= ëí~ÄäÉ= ÅìêêÉåí= íç éêçÇìÅÉ= ~= ìë~ÄäÉ= îçäí~ÖÉ= êÉÑÉêÉåÅÉ EcáÖK= TFK .. Tags: rkm 49 marking AAAE AAAE marking TFK 450 chip TFK 450 RKM 9 pcni MARKING rkm marking aaak datasheet abstract.. |
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First line: LS CIRCUIT BREAKERS TFK 914 D Tfk 680 tfk4 TFK 543 Molded Case Circuit Breakers Section Molded Case Circuit Breakers Molded Case Circuit Breakers Features .3-2 Spectra Circuit Breakers with MicroVersaTrip Plus Trip Units Features .3-3 Molded Case Circuit Breakers Quick Reference Guide .3-4 Miniature Abstract: .. Types TFK/THFK . When ordering Type TFJ, product number includes complete breaker, trip unit .. 600 450 SRPG600B450. 500 SRPG600B500. 600 SRPG600B600. 300 SRPK800B300. 400 SRPK800B400. 800 500 .. Tags: TFK 543 tfk4 Tfk 680 TFK 914 D LS CIRCUIT BREAKERS VU meter with LCD UL1077* UC 4863 TSVG816A* TQCBMPA1 TQC32010WL TLD3* TK4V4610A THQP230 THQL32070 THQL1120af* EP100 |
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First line: 433.92 SAW RESONATOR AUTOMOTIVE Tfk 680 74LS123 application circuits M44C260 tfk Components RF-Based Remote-Control Systems U4313B which mentioned several positions this report dedicated designs. described applications U4311B appropriate way. Transmission Frequencies Systems (Citizen Band) 224.5 (Mi Abstract: .. “citizen band” 27 MHz or 35 MHz to 40 MHz , the UHF band 300 MHz to 450 MHz , and one band around 2 .. TFK C102 3.9 pF T103 S852T Vishay TFK C103 18 pF T104 S852T Vishay TFK C104 18 pF. D101 DTZ 5,6 B .. Tags: 74LS123 application circuits Tfk 680 433.92 SAW RESONATOR AUTOMOTIVE TRANSISTOR c104 U4313B TTL 74ls86 TFK 450 chip TFK 450 TFK 1n4148 TFK 101 temic tuner module SIEMENS saw filter Siemens matsushita capacitor Receiver with SAW-based Oscillator M44C260 tfk U4313B U4311B |
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First line: TFK 111 B tfk 135 12V, 350mA LED driver 23 tfk 101 PWM IC 14 PIN sda scl 19-0625; 1/07 ATION EVALU ILABLE EEPROM-Programmable, High-Voltage, 350mA Drivers with Current Foldback Abstract: .. 450. 0. -40 125. ILOAD = 350mA. ILOAD = 35mA. ILOAD = 200mA. ILOAD = 100mA. VCS+ - VCS- vs. OUTPUT CURRENT .. Register 0x03 , MAX16806 The TFK register is a 4-bit register that sets the thermal knee .. Tags: PWM IC 14 PIN sda scl tfk 135 TFK 111 B TFK 450 chip TFK 450 tfk 140 TFK 101 analog sensor 1118 23 tfk 101 12V, 350mA LED driver datasheet abstract.. |
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First line: TFK diode TFK 838 23 tfk 101 TFK 447 TFK 450 19-0625; 8/06 EEPROM-Programmable, High-Voltage, 350mA Drivers with Current Foldback MAX16805/MAX16806 drivers eliminate need microcontrollers switch-mode converters automotive interior dome, map, courtesy light applications. EEPROM-programmable currentse Abstract: .. 450. 0. -40 125. ILOAD = 350mA. ILOAD = 35mA. ILOAD = 200mA. ILOAD = 100mA. VCS+ - VCS- vs. OUTPUT CURRENT .. Register 0x03 , MAX16806 The TFK register is a 4-bit register that sets the thermal knee .. Tags: TFK 838 TFK diodes TFK 450 chip TFK 450 TFK 447 tfk 140 TFK 101 analog sensor 1118 23 tfk 101 12V, 350mA LED driver MAX16805 MAX16806 |
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First line: tfk 135 23 tfk 101 19-0625; 1/07 EEPROM-Programmable, High-Voltage, 350mA Drivers with Current Foldback Abstract: .. 450. 0. -40 125. ILOAD = 350mA. ILOAD = 35mA. ILOAD = 200mA. ILOAD = 100mA. VCS+ - VCS- vs. OUTPUT CURRENT .. Register 0x03 , MAX16806 The TFK register is a 4-bit register that sets the thermal knee .. Tags: 23 tfk 101 tfk 135 datasheet abstract.. |
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First line: tfk 135 TFK 241 TFK 241 TFK 227 TFK 347 COMLINEAR CORP 227=1101 QQOQRbB Comlinear Corporation CLC936 ICMN 12-Bit, 20MSPS Converter 5IN- Abstract: .. DATA l«V Package Dimensions JX6- C'2 iM>-<tfK 1.080—1.100 27.43-27.34| J L .158-.192 ? r |4 .. VlN = FS 125 75 75 75 MHz LSBW slew rate 450 300 300 300 V/p.s SR overvoltage recovery time V|N = 2FS .. Tags: TFK 347 TFK 227 TFK 241 TFK 241 tfk 135 datasheet abstract.. |
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First line: TFK 7 segment displays tfk 648 LED 7-segment numeric display (CC or CA) TFK TFK 609 7-segment display tfk TELEFUNKEN Semiconductors Contents 02.96 Abstract: .. Green GaP on GaP TLMG3100 565 570 25 35 0.05 2.0 450 200. Pure green GaP on GaP TLMP3100 555 560 22 12 0 .. Identification Label: Tfk Type Group .. Tags: 7-segment display tfk TFK 609 LED 7-segment numeric display (CC or CA) TFK TFK 7 segment displays two digit cathode 7-segment display common anode TLMO3100 TFK CQX TFK BPW 75 TFK BPW 41 N TFK BPW 24 tfk 648 TFK 602 TFK 450 chip TFK 450 tfk 4 132 datasheet abstract.. |
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First line: TFK 19 001 Tfk 237 SGS-THOMSON 74AC244 HIGH SPEED: tpD= (TYP.) POWER DISSIPATION: (MAX.) HIGH NOISE IMMUNITY: Vnih Vnil (MIN.) TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: IIOHI (MIN) BALANCED PROPAGATION DELAYS: Abstract: .. E 10.00 10.65 0.393 0.419 e 1.27 0.050 e3 11.43 0.450 F 7.40 7.60 0.291 0.299 L 0.50 1.27 0.19 0.050 .. tJ:u-t tFK. Propagation Delay Time Output Enable Time Output Disable Time. 3.:f} s.d"" 3.-j .. Tags: Tfk 237 TFK 19 001 datasheet abstract.. |
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First line: tfk 135 TFK U 111 B TFK 082 tfk 548 5/-h Silicon Transistor 2SD999 7i7-tr-y Sfalli (ip-ii Abstract: .. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 c E 60 S ^ 40 20 r 00 450 400 350 S 300 s- 250 r .. £ "tfK •fe UQ 5Ü! «S m k i J £ 3 a Sf mu; tK utí -H1? Vj ' <R ». tÌ lííia M line J {K ^ » AJ ima ffiK ÍTiía m -H. □ .. Tags: tfk 548 TFK 082 TFK U 111 B tfk 135 datasheet abstract.. |
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First line: tfk 731 Fuji Semiconductor Products 6MBP50NA060-01 Features liMti switching-surge noise power loss High reliability Maximum ratings characteristics Absolute maximum Symbol Rating Unit Abstract: .. Vdc 0 450 V vdc surge 0 500 V Vsc 200 400 V vces 0 600 V N w DC le - 50 A 1mS lep - 100 A Duty=62.6% -le - 50 .. ^ •> ';tfk .t., ^ • ti t w • ■ íiii^^mmi-i«^ ■ inrr-tjíiniíaflw ■ ■ 8. zoyjiv i; L >_ , kn'^fÜHI'-i .. Tags: tfk 731 datasheet abstract.. |
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First line: TIC 1160 FETOtifcMyf^f TEA-566A gfS&'Mt, bnmtbix^t-t. ittici] iJ-Xl/^fak-^^X'f J.lz-i' LizW, Xio^^flX^tt. '<V-MOS i-y-Tv^a. Abstract: .. % 10 % m.2 2SK854 5 A, 450 V, TO-220 2SK735 10A, 450 V, MP-88 «X^í 7f m s »ft # li m m 14 ¥ ß & ft 2SK854 .. K> _> InrtT W ff 5£ -i V ■e •tfK ihm » « Ä •»5 & •fc fi a u œ jB¡ u Í! U SR i j w <W «J •f 55 e m -M » iilíñ * ng e * E jj .. Tags: TIC 1160 datasheet abstract.. |
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First line: tfms 4300 n tfmt 4300 ir detector Photo diode TFK S 186 P IR diodes TFK S 186 P TFMS 4300 Infrared Emitters Detectors Data Book 1994 Abstract: .. .5 450 3.5 1 1. 1 tr, tf 2 VR = 50 V 3 VR = 20 V * long lead packages optional: suffix ”L”, e.g. BPV 23 .. Identification Label: Tfk Type Group Tape Code Production Code Quantity. Tape Feed Direction .. Tags: IR diodes TFK S 186 P Photo diode TFK S 186 P tfms 4300 n uv led 365 transistor dual emitters catalogue Thyristor catalog tfmt 4300 ir detector TFMt 4300 TFMt* TFMS 5360 TFMS 4300 TFMS 4 tfms* TFM 5400 datasheet abstract.. |
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First line: TFK 925 ST Z025 tfk 2550 CD4034A* CD4034A ----- CD4057A Types CMOS 4-Bit Arithmetic Logic Unit RCA-CD4057A low-power arithmetic logic unit (ALU) designed computers. arithmetic system virtually size constructed wiring together number CD4057A ALU's. CD4057A provides 4-bit arithmetic operations, time s Abstract: .. 300 825 10 - 165 450 All Other Outputs 5 - 1000 2775 10 - 475 1275 Minimum Clock Pulse Width, tw 5 - 400 .. ~ . . . . 3. _sauD L.tfK. It PMKItTS INPUT I'"1tOIf EltT1:-"IOW SOUIQ WMllil ..,.,.. OUT'" t$ l .. Tags: CD4034A CD4034A* tfk 2550 ST Z025 TFK 925 datasheet abstract.. |
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First line: datasheet ic 74LS08 ttl TFK 822 Tfk 680 TFK 1n4148 TFK 804 ANT012 Components Radio Frequency based Remote Control Systems Issue: Abstract: .. or 35 MHz to 40 MHz , the UHF band 300 MHz to 450 MHz and one band around 2.4 GHz. A chart of the ISM .. D102 BZT03/D18 C 105 100 pF TEMIC TFK C 106 3 pF. C 107 100 pF. R 101 1.5 kΩ C 108 10 pF. R 102 1.5 kΩ C 109 6 .. Tags: TFK 804 Tfk 680 TFK 822 datasheet ic 74LS08 ttl U4313B TTL 74ls86 TRANSISTOR SUBSTITUTION DATA BOOK 1993 TFK U 111 B tfk u 111* TFK 450 tfk 434 TFK 330 TFK 1n4148 TFK 101 temic tuner module ANT012 |
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First line: JCOP TFK 227 TFK 548 JCOP* MZ 1530 (S^) integrated Circuit LWfa-t if^F, LW^a. -^SiCP^fg;* PLUD^v^tKlf LCDU ^-i/^it/IFii^if^lL hCSI^T'tSTo ./>x fcj^jfST Abstract: .. AHM mm® [kHz] MW 450 + 5 450 + 2 LW 450 ±5 450 ± 0.5 AftH&aiËHCDti, PLLtfn -y * Ufc£¿:20 msJìlrtCAà L4 .. .0 531 87.7 540 92.3 585 87.0 531 87.0 531 87.0 531 FM2, FM3, VFä£tfK'JHl,2J^<&MW2A> KflM1-M6l3 .. Tags: MZ 1530 JCOP* TFK 548 TFK 227 JCOP datasheet abstract.. |
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First line: 433 mhz UHF RECEIVER, pcb layout and Schematic Di TFK 106 m44c260 TFK 105 m44c260 Remote Control Systems Remote Control Remote Control System Solution Keyless Entry Comparison Infrared versus Systems Infrared System System Dedicated Transistors Keyless Entry/ Remote Control U2740B Transmitter Remote Abstract: .. output frequency of 450 MHz. The resulting value KVCO of the voltage- controlled oscillator is .. TEMIC TFK C106 3 pF. C107 100 pF. R101 1.5 k C108 10 pF. R102 1.5 k C109 6 pF. R103 22 k C111 4.7 pF. R104 47 k .. Tags: TFK 105 m44c260 TFK 106 m44c260 433 mhz UHF RECEIVER, pcb layout and Schematic Di 433 mhz rf RECEIVER, PDF pcb layout TFK U 4311 B Zener Diode 4148 working of ultrasonic transmitter Ultrasonic transmitter receiver transit time Ultrasonic transmitter receiver ultrasonic receiver SIEMENS U9280M U4313B U4311B-FS U426B-FP* U426* u2741b U2740B U2740B-Relevant U2740B s |
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First line: 2sd 209 l IR diodes TFK S 1 86 P TFK U 111 B TFK S 186 P IR diodes TFK S 186 P MIL-M-38510/25D August 19B6 MlKTtSLBIllfi _HIL-M-0038S10/2 (19) lOuahHcation requirements have been removedl 5lL'5*511 To/IIc dev1ce H.irt IMfi MIL-M-38510/25B June 1975 MILITARY SPECIFICATION Abstract: .. • . U U W e k * iz a e tfk. • .£> T5 | • * «• • f 2-r-;.. • L*ç gì* J • « C O k. • •It -ti ♦ * • « N *> M • • <— >« « M M «1 .. 110 ' " ' I I I I J lO I I I 450 I I I , I 1f---T I 110 I , I l7.0 I , I J 30 I , I ISO I , I , I 21 -l--~i. I "Hz I I I. This .. Tags: IR diodes TFK S 186 P TFK S 186 P TFK U 111 B IR diodes TFK S 1 86 P 2sd 209 l datasheet abstract.. |
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First line: opto 3171 tfk 1007 LM 3171 TFK U 217 B M 4 3171 opto HIL-H-38S10/371A August 1986_ SUPEHSED1H6 MIL-M-38510/371(USAF) November 1983 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL. BIPOLAR, ADVANCED, LOW-POWER SCHOTTKY TTL. FLIP-FLOPS, MOUOLITHIC SILICON This specification approved Departments Agencies Abstract: .. 450" . square chip IBeneHcia 1 comments [reconmendations. additions, deletions and any .. a ■S S » »■ tfi is> M m >■ uttn » •> «r>t> mm * » O • r cv C o X X ON ^ ^ 91 « « e a- o — O* p- oc * « Nnvir o o o o sr v tfK .. Tags: M 4 3171 opto TFK U 217 B LM 3171 tfk 1007 opto 3171 datasheet abstract.. |
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First line: IGO tv circuit diagram 28 tfk 518* tsl 6251 MARKING 3LU tsl 6251 IC June 1981 SUPERSEDING- MIL-M-38510/117 March 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, ADJUSTABLE, POSITIVE, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification approved Departments Agencies Department Defense. Scope. Abstract: .. 250 .450 6.35 11.43 A1 1.177 1.197 29.90 30.40 a2 1.480 1.500 37.59 38.10 0b .038 .043 .97 1.09 3 .. 8 »» « « « tft tfk tf» 7 7 7 ■ ■ « S J» ar>» CO M .i A 8 SmKN WlilltlW ■ • a ■ ill; 8*38* WWWlji 11 V sa " 'VI. [ "I .. Tags: tsl 6251 IC MARKING 3LU tsl 6251 28 tfk 518* IGO tv circuit diagram datasheet abstract.. |
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First line: TFK 836 FCM 7010 zt 232 leen .pdf LEM LC 500-S STM CL-70 Integated Cicuit uPD17010 //PD17010 v^^AfflM- K.0x775FtgjSLfc t'-y >>^^ CMOS T'To T'-^^ LTfc'J, fcT'-iTCO^a* fc'-y liT't. LCD3>hP-7/F7<A', (PWMtB^j), vi^-U--* (D&flz, ^'-f d.--> 150MHz Abstract: .. ^iftfÌ-M A T ~fu a • ■ 1- -K PSWORD C £ 7 K US SS u tfk m op "P bcd 7 cmp7 cy77/ <r>mrt z 7.7 ^'«Sbfi -oxia .. lÄSt : 9 kHz + WJ3»» : +450 kHz fl-ilíSNlí N = J^= 142^450 = 208 Q0M = ODOH 16 it PLL -r — 9 • U PLLR : m .. Tags: STM CL-70 LEM LC 500-S zt 232 leen .pdf FCM 7010 TFK 836 datasheet abstract.. |
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