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TA49345 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results
Fulltext Datasheet Results 1 - 7 of about 7 for TA49345
ID 1 First line: TA49345* TA49345 30N60A4D* 30n60a4d intelai HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60A4D gated high voltage switching devices combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state conduction loss bipolar Abstract: .. Formerly Developmental Type TA49345. Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60A4D TO-247 30N60A4D NOTE: When ordering, use the entire part number. Symbol c January 2000 File ..  Tags: 30n60a4d 30N60A4D* TA49345 TA49345*   datasheet abstract.. 616.38 Kb 9 Pages OCR Scan PDF Download
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ID 2 First line: 30N60A4D* TA49373* mosfet 600V 30A TA49373 30N60A4D HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60A4D gated high voltage switching devices combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state conduction loss Abstract: .. Formerly Developmental Type TA49345. Symbol. Features • >100kHz Operation At 390V, 30A. • 200kHz Operation At 390V, 18A. • 600V Switching SOA Capability. • Typical Fall Time. . . . . . . . . . . . . . . . . 60ns ..  Tags: TA49373 mosfet 600V 30A TA49373* 30N60A4D* 30n60a4d  30n60*   TA49343 TA49373 TA49345 99.23 Kb 9 Pages Original PDF Download
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ID 3 First line: TA49373 30n60a4d* pc 3020 TA49373* 30n60a4d HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60A4D gated high voltage switching devices combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state conduction loss bipolar Abstract: .. Formerly Developmental Type TA49345. Symbol. Features. • >100kHz Operation At 390V, 30A. • 200kHz Operation At 390V, 18A. • 600V Switching SOA Capability. • Typical Fall Time. . . . . . . . . . . . . . . . . .60ns ..  Tags: TA49373* pc 3020 TA49373 HGTG30N60A4D  30N60A4D*  30N60A*   TA49343 TA49373 TA49345 111.59 Kb 10 Pages Original PDF Download
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ID 4 First line: TA49345 mosfet 600V 60A 30n60a4d HGT1N30N60A4D HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Abstract: .. Formerly Developmental Type TA49345. Features. • 100kHz Operation At 390V, 20A. • 600V Switching SOA Capability. • Typical Fall Time . . . . . . . . . . 58ns at TJ = 125 oC. • Low Conduction Loss. Device Maximum ..  Tags: mosfet 600V 60A TA49345 30N60A4D*  30N60A*   HGT1N30N60A4D 272.91 Kb 9 Pages Original PDF Download
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ID 5 First line: 30n60a4d HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60A4D gated high voltage switching devices combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state conduction loss bipolar transistor. much lower on-state vo Abstract: .. Formerly Developmental Type TA49345. Symbol. Features • >100kHz Operation At 390V, 30A. 200kHz Operation At 390V, 18A. 600V Switching SOA Capability. Typical Fall Time. . . . . . . . . . . . . . . . . 60ns ..  Tags: HGTG*N60A4D  HGTG30N60A4D  30N60A4D*  30N60A*   TA49343 TA49373 TA49345 152.73 Kb 9 Pages Original PDF Download
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ID 6 First line: TA49373 30N60A* 30n60a4d* 30n60a4d HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60A4D gated high voltage switching devices combining best features MOSFETs bipolar transistors. This device high input impedance MOSFET on-state conduction loss bipolar transist Abstract: .. Formerly Developmental Type TA49345. Symbol. Features. • >100kHz Operation At 390V, 30A. • 200kHz Operation At 390V, 18A. • 600V Switching SOA Capability. • Typical Fall Time . . . . . . . . . . . . . . . . . 60ns ..  Tags: 30n60a4d* TA49373 30N60A4D  30N60A*   TA49343 TA49373 TA49345 115.75 Kb 9 Pages Original PDF Download
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ID 7 First line: 30N60A4D* 30n60a4d 30n60* 227 HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N30N60A4D gated high voltage switching device combining best features MOSFETs bipolar transistor. These devices have high input impedance MOSFET on-state conduction loss bipolar transi Abstract: .. Formerly Developmental Type TA49345. Features. • 100kHz Operation At 390V, 20A. • 600V Switching SOA Capability. • Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at T. J. = 125. o. C. • Low Conduction Loss. Symbol ..  Tags: 30n60* 227 30N60A4D*   TA49345 141.63 Kb 9 Pages Original PDF Download
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