SiS892DN
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SiS892DN - SiS892DN
SPICE Device Model SiS892DN
N-Channel (D-S) MOSFET
attached SPICE model describes typical electrical characteristics n-channel vertical DMOS. subcircuit model extracted optimized over temperature ranges under pulsed gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
CHARACTERISTICS
N-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
ETCV
Note This document intended SPICE modeling guideline does constitute commercial product datasheet. Designers should refer appropriate datasheet same number guaranteed specification limits.
Document Number: 66630 S10-0915-Rev. 19-Apr-10
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SPICE Device Model SiS892DN
SPECIFICATIONS unless otherwise noted
PARAMETER Static Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Body Diode Voltage Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Ciss Coss Crss 14.2 VGS(th) RDS(on) VGS, 0.023 0.031 0.80 0.024 0.034 0.81 SYMBOL TEST CONDITIONS SIMULATED MEASURED DATA DATA UNIT
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
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Document Number: 66630 S10-0915-Rev. 19-Apr-10
SPICE Device Model SiS892DN
COMPARISON MODEL WITH MEASURED DATA unless otherwise noted
Drain Current Drain Current
Drain-to-Source Voltage Gate-to-Source Voltage
0.050
1200
0.044 RDS(on) On-Resistance Capacitance (pF)
0.038
Ciss
0.032
Coss
0.026
Crss
0.020
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Source Current
VDS=
0.01
Total Gate Charge (nC)
0.001
Source-to-Drain Voltage
Note Dots squares represent measured data. Document Number: 66630 S10-0915-Rev. 19-Apr-10 www.vishay.com
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Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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