Si9407DY
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Si9407DY - Si9407DY
Si9407DY - Si9407DY
Si9407DY
rDS(on)
0.150 0.240 -4.5
"3.0 "2.4
SO-8
View P-Channel MOSFET
Absolute Maximum Ratings 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
Limit
"3.0 "2.4 -2.5
Unit
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta Notes Surface Mounted Board, sec. Subsequent updates this data sheet obtained facsimile calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1203. SPICE Model data sheet available this product (FaxBack document #5129).
Symbol
RthJA
Limit
Unit
_C/W
Siliconix S-47958-Rev. 15-Apr-96
Si9407DY
Specifications 25_C Unless Otherwise Noted)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) VGS, -250 55_C -4.5 -3.0 -2.5 0.11 0.15 -0.9 -1.2 0.150 0.24 "100
Symbol
Test Condition
Typa
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) -3.0 di/dt A/ms VGEN -3.0 24.6
Notes Guaranteed design, subject production testing. Pulse test; pulse width duty cycle
Siliconix S-47958-Rev. 15-Apr-96
Si9407DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Drain Current Drain Current 25_C 125_C -55_C
Transfer Characteristics
Drain-to-Source Voltage
Gate-to-Source Voltage
On-Resistance Drain Current
2000
Capacitance
rDS(on) On-Resistance
Capacitance (pF)
1600
1200 Ciss Coss Crss
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Gate Charge
On-Resistance Junction Temperature
rDS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Siliconix S-47958-Rev. 15-Apr-96
Si9407DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Source Current
150_C 25_C
rDS(on) On-Resistance
Source-to-Drain Voltage Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
VGS(th) Variance
Power
-0.5
0.01 Time (sec) Temperature (_C)
Normalized Effective Transient Thermal Impedance Duty Cycle 0.05 0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes: Duty Cycle, Unit Base RthJA 50_C/W PDMZthJA(t) Surface Mounted
Single Pulse 0.01 10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
Siliconix S-47958-Rev. 15-Apr-96
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