Si7119DN
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Si7119DN - Si7119DN
Si7119DN
P-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 1.05 1.10 6.0V 3.8e 3.6e (Typ) 10.6
FEATURES
TrenchFET® Power MOSFET Thermal Resistance PowerPAK® Package with Small Size 1.07 Profile Tested
RoHS
COMPLIANT
APPLICATIONS
Active Clamp Intermediate DC/DC Power Supplies
PowerPAK 1212-8
3.30
3.30
P-Channel MOSFET
Bottom View Ordering Information: Si7119DN-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Symbol Limit 3.8e 3.0e 1.2a, 0.95a, 3.0a, 1.25 3.7a, 2.4a, Unit
Continuous Drain Current
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)c, Notes: Surface Mounted board. sec. Solder Profile PowerPAK 1212-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Document Number: 74251 S-62437-Rev. 27-Nov-06 www.vishay.com
Tstg
Si7119DN
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, Maximum Junction-to-Case (Drain) Notes: Surface Mounted board. Maximum under Steady State conditions °C/W. Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage
Symbol VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions VGS,
Unit
0.86 0.88 1.05 1.10
mV/°C
VGEN
16.2 10.6
VGEN
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
di/dt A/µs,
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74251 S-62437-Rev. 27-Nov-06
Si7119DN
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current thru Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
1.200 1000
Transfer Characteristics
rDS(on) On-Resistance
1.120 Capacitance (pF)
Ciss
1.040
0.960
0.880
Coss Crss
0.800
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage rDS(on) On-Resistance (Normalized)
Capacitance
10.2
13.6
17.0
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
On-Resistance Junction Temperature
Document Number: 74251 S-62437-Rev. 27-Nov-06
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Si7119DN
TYPICAL CHARACTERISTICS unless otherwise noted
Source Current rDS(on) Drain-to-Source On-Resistance
0.01 Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
VGS(th) Power
On-Resistance Gate-to-Source Voltage
0.001 0.01 Time (sec)
Temperature (°C)
Threshold Voltage
*Limited rDS(on)
Drain Current
Single Pulse Power, Junction-to-Ambient
Single Pulse 1000 Drain-to-Source Voltage *VGS minimum which specified
0.01
0.001
Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 74251 S-62437-Rev. 27-Nov-06
Si7119DN
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current
Case Temperature (°C)
Current Derating*
Power
Power
Case Temperature (°C)
Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
*The power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 74251 S-62437-Rev. 27-Nov-06
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Si7119DN
TYPICAL CHARACTERISTICS unless otherwise noted
Duty Cycle Normalized Effective Transient Thermal Impedance
0.05
Notes:
0.02
Duty Cycle,
Unit Base RthJA °C/W PDMZthJA(t)
Single Pulse 0.01 Square Wave Pulse Duration (sec)
Surface Mounted
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle
Normalized Effective Transient Thermal Impedance
0.05 0.02 Single Pulse
0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 74251 S-62437-Rev. 27-Nov-06
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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