Si4948BEY RC
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Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 21.8201 8.1139 32.3427 47.1462 Ambient 10.8053 804.8542 57.2589 1.4498 Case Case Foot 11.3853 4.0448 13.1289 8.4704 Foot 4.6399 413.3234 30.2199 217.5051
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73765 Revision 23-Jan-06
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Si4948BEY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.5110 25.8169 31.4783 44.2066 Ambient 525.2266 6.7261 45.5528 1.4272
Case Case
Foot 5.6037 14.8167 13.4714 3.1907 Foot 426.5868 4.2031 38.5086 625.8011
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73765 Revision 23-Jan-06
Si4948BEY_RC
Document Number: 73765 Revision 23-Jan-06
www.vishay.com
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