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Si4434DY RC


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Si4434DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.6811 22.4894 38.0947 14.3700 Ambient 4.7707 35.3707 2.0586 300.2025 Case Case Foot 891.0923 4.0712 10.1982 5.7147 Foot 1.3179 17.9041 142.5144 27.2659
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74096 Revision 31-Aug-05
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Si4434DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 9.2689 13.5460 20.3323 36.3667 Ambient 7.1986 23.1430 73.9096 1.9824
Case Case
Foot 1.3810 9.8812 5.9800 3.6972 Foot 1.8920 8.7357 90.2266 347.4011
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74096 Revision 31-Aug-05
Si4434DY_RC
Document Number: 74096 Revision 31-Aug-05
www.vishay.com

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