Si1970DH
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Si1970DH - Si1970DH
Si1970DH
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.225 0.345 (A)a 1.3a 1.3a (Typ) 1.15
FEATURES
TrenchFET® Power MOSFET
APPLICATIONS
Load switch portable applications
RoHS
COMPLIANT
SOT-363 SC-70 (6-LEADS)
Marking Code Traceability Date Code Part Code
N-Channel MOSFET
N-Channel MOSFET
View
Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)d, Tstg Symbol Limit 1.3a 1.3a 1.3a 0.61c 1.25 0.74b, 0.47b, Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Maximum Junction-to-Foot (Drain) Notes: Package limited. Surface Mounted Board. sec. Maximum under Steady State conditions °C/W. Document Number: 74343 S-62441-Rev. 27-Nov-06 www.vishay.com Junction-to-Ambientb, Steady State Symbol RthJA RthJF Typical Maximum Unit °C/W
Si1970DH
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Symbol VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions VGS, 0.29
Unit
0.185 0.285 0.225 0.345
mV/°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
13.6 VGEN 1.15 13.6 VGEN 0.85 di/dt A/µs, 16.5
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74343 S-62441-Rev. 27-Nov-06
Si1970DH
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
rDS(on) On-Resistance
Capacitance (pF)
Ciss
Coss
Drain Current
Crss
Drain-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage
Capacitance
rDS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge Document Number: 74343 S-62441-Rev. 27-Nov-06
On-Resistance Junction Temperature www.vishay.com
Si1970DH
TYPICAL CHARACTERISTICS unless otherwise noted
rDS(on) On-Resistance
Source Current
Source-to-Drain Voltage
Gate-to-Source Voltage
Forward Diode Voltage
On-Resistance Gate-Source Voltage
GS(th) Variance Power
0.01
Time (sec)
Temperature (°C)
Threshold Voltage
*Limited rDS(on)
Single Pulse Power
Drain Current
BVDSS Limited
Single Pulse 0.01 *VGS
Drain-to-Source Voltage minimum which rDS(on) specified
Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 74343 S-62441-Rev. 27-Nov-06
Si1970DH
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current Package Limited Power Dissipation
Case Temperature (°C)
Case Temperature (°C)
Current Derating*
Power Derating
*The power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
Duty Cycle,
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Unit Base RthJA °C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 74343 S-62441-Rev. 27-Nov-06
www.vishay.com
Si1970DH
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05
0.02 Single Pulse
0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 74343 S-62441-Rev. 27-Nov-06
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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