Si1073X

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Si1073X
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.173 0.243 0.98a 0.83 (Typ) 3.25
FEATURES
TrenchFET® Power MOSFET Tested
APPLICATIONS
Load Switch
RoHS
COMPLIANT
SC-89 (6-LEADS)
Marking Code
Traceability Date Code Part Code P-Channel MOSFET
View Ordering Information: Si1073X-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction Storage Temperature Range Symbol Tstg Limit 0.98b, 0.78b, 0.2b, 0.236b, 0.151b, Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, Notes: Based Surface Mounted board. sec. Maximum under Steady State conditions °C/W. Steady State Symbol RthJA Typical Maximum Unit °C/W
Document Number: 74285 S-62440-Rev. 27-Nov-06
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Si1073X
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time di/dt A/µs 0.63 14.3 12.16 11.1 21.45 18.25
Symbol VDS/TJ VGS(th)/ VGS(th) IGSS IDSS ID(on) rDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions VGS, 0.98 0.83 0.98
Unit
30.7 3.78 0.144 0.202 3.52 0.98 0.98 19.2 0.78 VGEN 3.25 1.02 1.47 22.72 0.66 VGEN 4.88 9.45 0.173 0.243 mV/°C
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74285 S-62440-Rev. 27-Nov-06
Si1073X
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.40
Transfer Characteristics curves Temp
DS(on) On-Resistance
0.32 Capacitance (pF)
Ciss
0.24 0.16
Coss Crss
0.08
0.00 Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage 0.94 DS(on) On-Resistance (Normalized)
Capacitance
0.94
0.83
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
On-Resistance Junction Temperature
Document Number: 74285 S-62440-Rev. 27-Nov-06
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Si1073X
TYPICAL CHARACTERISTICS unless otherwise noted
0.24 0.94 DS(on) On-Resistance Source Current 0.20
0.16
0.12
0.01 Source-to-Drain Voltage
0.08 Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
rDS(on) Temperature
GS(th) Variance
Power
0.01
1000
Temperature (°C)
Time (sec)
Threshold Voltage
Limited DS(on) Drain Current 0.01 Single Pulse BVDSS Limited
Single Pulse Power
0.001
Drain-to-Source Voltage minimum which rDS(on) specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74285 S-62440-Rev. 27-Nov-06
Si1073X
TYPICAL CHARACTERISTICS unless otherwise noted
Duty Cycle Normalized Effective Transient Thermal Impedance 0.05 0.02
Notes:
0.01
0.001
Duty Cycle,
Unit Base RthJA °C/W
Single Pulse 0.0001 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 74285 S-62440-Rev. 27-Nov-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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Si1073X

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