SUP52N20-39P

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SUP52N20-39P - SUP52N20-39P

SUP52N20-39P
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS rDS(on) 0.038 0.039 (Typ)
FEATURES
TrenchFET® Power MOSFETS Junction Temperature Tested
RoHS
COMPLIANT
APPLICATIONS
Power Supply Primary Side Lighting Industrial
TO-220AB
View Ordering Information: SUP52N20-39P-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction Storage Temperature Range Symbol Tstg Limit 32.5
Unit
3.12
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: Duty cycle curve voltage derating. When Mounted square (FR-4 material). Symbol RthJA RthJC Limit Unit °C/W
Document Number: 74294 S-62448-Rev. 27-Nov-06
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SUP52N20-39P
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS, Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Ciss Coss Crss td(on)
Symbol
Test Conditions
Unit
0.031 0.0305 0.039 0.038 0.071 0.094 4220
Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time VGEN °C)b 0.86 di/dt A/µs 0.54 0.81
td(off) IRM(REC)
Source-Drain Diode Ratings Characteristics
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74294 S-62448-Rev. 27-Nov-06
SUP52N20-39P
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.045
Transfer Characteristics
Transconductance
rDS(on) On-Resistance
0.041
0.037 0.033 0.029
0.025
Drain Current
Drain Current
Transconductance
0.09 0.07 On-Resistance 0.06 Capacitance (pF) 4480 5600
On-Resistance Drain Current
Ciss
3360
0.05
2240
0.04
1120
Crss Coss
0.03
Gate-to-Source Voltage
Drain-to-Source Voltage
On-Resistance Gate-to-Source Voltage Document Number: 74294 S-62448-Rev. 27-Nov-06
Capacitance www.vishay.com
SUP52N20-39P
TYPICAL CHARACTERISTICS unless otherwise noted
100, Gate-to-Source Voltage rDS(on) On-Resiistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
On-Resistance Junction Temperature
Source Current GS(th) Variance
=150
0.01
0.001 Source-to-Drain Voltage
Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
V(BR)VDSS (nomalized)
0.00001
0.0001
0.001 (Sec)
0.01
Temperature Junction (°C)
Drain Source Breakdown Junction Temperature
Single Pulse Avalanche Current Capability Time
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Document Number: 74294 S-62448-Rev. 27-Nov-06
SUP52N20-39P
THERMAL RATINGS
1000
Drain Current
Drain Current
*Limited (on)
Single Pulse
Case Temperature (°C)
1000 Drain-to-Source Voltage *VGS minimum which (on) specified
Maximum Drain Curent Case Temperature
Duty Cycle Normalized Effective Transient Thermal Impedance
Safe Operating Area
0.05 0.02 Single Pulse 0.01 10-3 10-2 Square Wave Pulse Duration (sec) 10-1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, http://www.vishay.com/ppg?74294
Document Number: 74294 S-62448-Rev. 27-Nov-06
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Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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SUP52N20-39P

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