SUD70N02-3m3P RC
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SUD70N02-3m3P_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 1.2326 3.5524 9.3704 30.8446 Ambient 11.8612 186.9528 932.2233 2.8361 Case 889.6187 369.0936 99.7090 541.5787 Case 23.9035 1.8745 11.7589 5.3109 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69930 Revision: 12-Dec-07
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SUD70N02-3m3P_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 1.3571 5.1458 14.5008 23.9963 Ambient 10.5421 132.4251 606.1904 2.7815
Case 905.1875 217.2079 680.5501 97.0545 Case 1.4759 16.1817 4.1831 17.1849
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69930 Revision: 12-Dec-07
SUD70N02-3m3P_RC
Document Number: 69930 Revision: 12-Dec-07
www.vishay.com
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