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SUD50N06-36 RC


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SUD50N06-36_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.2035 26.4704 16.2843 6.0418 Ambient 599.1012 4.7811 1.2787 116.1746 Case 1.2603 1.0375 809.9000 2.0923 Case 1.5159 335.3878 207.9560 10.8832 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 70476 Revision: 03-May-07
www.vishay.com
SUD50N06-36_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.1866 6.8815 21.3879 20.5440 Ambient 608.3905 95.4496 836.6297 4.5749
Case 1.3136 1.7548 1.3611 770.5000 Case 226.8507 1.5660 14.1467 159.1429
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 70476 Revision: 03-May-07
SUD50N06-36_RC
Document Number: 70476 Revision: 03-May-07
www.vishay.com

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