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STP4NC50 STP4NC50FP


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STP4NC50 - STP4NC50  
STP4NC50FP - STP4NC50FP  

STP4NC50 STP4NC50FP
N-CHANNEL 500V 3.5A TO-220/TO-220FP PowerMeshTMII MOSFET
TYPE STP4NC50 STP4NC50FP
VDSS
RDS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION PowerMESHTMII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns switching speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDGR
Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C 0.64
Parameter
Value STP4NC50 3.5(*) 2.2(*) 14(*) 0.32
(1)ISD 3.5A, di/dt 100A/µs, V(BR)DSS TJMAX. (*).Limited only maximum temperature allowed
Unit W/°C V/ns 2000
STP4NC50FP
PTOT
Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
dv/dt VISO Tstg
width limited safe operating area
October 2000
STP4NC50/FP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 1.56 62.5 TO-220FP 3.12 °C/W °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. Typ.
Max.
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current
VGS, 250µA
DYNAMIC
Symbol
Ciss
Coss Crss
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Parameter
10V,
Test Conditions Test Conditions
Min.
Unit
±100
Typ.
Max.
Unit
ID(on) RDS(on)max,
Min.
Typ.
Max.
Unit
ID(on) RDS(on)max, 25V, MHz,
STP4NC50/FP
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure 400V, Min. Typ. 12.5 Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min.
Typ.
di/dt 100A/µs 100V, 150°C (see test circuit, Figure
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area TO-220
Max.
Unit
1.64
Safe Operating Area TO-220FP
STP4NC50/FP
Thermal Impedence TO-220 Thermal Impedence TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STP4NC50/FP
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP4NC50/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP4NC50/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
0.147
0.551
0.116
0.620 0.260 0.154 0.151
P011C
STP4NC50/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106
0.409
1.204
0.417 0.645 0.366
0.126
STP4NC50/FP
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

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