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STP4NC50 STP4NC50FP
Top Searches for this datasheetSTP4NC50 - STP4NC50 STP4NC50FP - STP4NC50FP STP4NC50 STP4NC50FP N-CHANNEL 500V 3.5A TO-220/TO-220FP PowerMeshTMII MOSFET TYPE STP4NC50 STP4NC50FP VDSS RDS(on) TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION PowerMESHTMII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns switching speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDGR Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C 0.64 Parameter Value STP4NC50 3.5(*) 2.2(*) 14(*) 0.32 (1)ISD 3.5A, di/dt 100A/µs, V(BR)DSS TJMAX. (*).Limited only maximum temperature allowed Unit W/°C V/ns 2000 STP4NC50FP PTOT Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature dv/dt VISO Tstg width limited safe operating area October 2000 STP4NC50/FP THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 1.56 62.5 TO-220FP 3.12 °C/W °C/W °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. Typ. Max. Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current VGS, 250µA DYNAMIC Symbol Ciss Coss Crss Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter 10V, Test Conditions Test Conditions Min. Unit ±100 Typ. Max. Unit ID(on) RDS(on)max, Min. Typ. Max. Unit ID(on) RDS(on)max, 25V, MHz, STP4NC50/FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure 400V, Min. Typ. 12.5 Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. di/dt 100A/µs 100V, 150°C (see test circuit, Figure Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Safe Operating Area TO-220 Max. Unit 1.64 Safe Operating Area TO-220FP STP4NC50/FP Thermal Impedence TO-220 Thermal Impedence TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source Resistance STP4NC50/FP Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage Temp. Normalized Resistance Temperature Source-drain Diode Forward Characteristics STP4NC50/FP Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuit Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times STP4NC50/FP TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 Dia. 0.147 0.551 0.116 0.620 0.260 0.154 0.151 P011C STP4NC50/FP TO-220FP MECHANICAL DATA DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 1.204 0.417 0.645 0.366 0.126 STP4NC50/FP Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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