STP12NK80Z STB12NK80Z STW12NK80Z
|
|
|
Top Searches for this datasheet
w12nk80z - w12nk80z
STP12NK80Z - STP12NK80Z
STB12NK80Z - STB12NK80Z
STW12NK80Z - STW12NK80Z
STP12NK80Z STB12NK80Z STW12NK80Z
N-CHANNEL 800V 0.65 10.5A TO-220 D2PAK TO-247 Zener-Protected SuperMESHTMPower MOSFET
TYPE STP12NK80Z STB12NK80Z STW12NK80Z
VDSS
RDS(on) 0.75 0.75 0.75
10.5 10.5 10.5
TYPICAL RDS(on) 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
D2PAK
TO-247
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established stripbased PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
SALES TYPE STP12NK80Z STB12NK80ZT4 STW12NK80Z MARKING P12NK80Z B12NK80Z W12NK80Z PACKAGE TO-220 D2PAK TO-247 PACKAGING TUBE TAPE REEL TUBE
February 2004
1/12
STP12NK80Z STB12NK80Z STW12NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 10.5 1.51 6000 Unit W/°C V/ns
Pulse width limited safe operating area 10.5A, di/dt 200A/µs, V(BR)DSS, TJMAX. Limited only maximum temperature allowed
THERMAL DATA
TO-220/ Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 62.5 0.66 TO-247 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value 10.5 Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
2/12
STP12NK80Z STB12NK80Z STW12NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 10V, 5.25 3.75 0.65 Min. 0.75 Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 5.25 25V, MHz, Min. Typ. 2620 Max. Unit
640V
SWITCHING
Symbol td(on) Test Conditions 5.25 (Resistive Load see, Figure 640V, 10.5 Min. Typ. Max. Unit
SWITCHING
Symbol td(off) tr(Voff) Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 5.25 (Resistive Load see, Figure 10.5 4.7, (Inductive Load see, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 10.5 10.5 di/dt 100A/µs 150°C (see test circuit, Figure 18.5 Test Conditions Min. Typ. Max. 10.5 Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
3/12
STP12NK80Z STB12NK80Z STW12NK80Z
Safe Operating Area Thermal Impedance
Safe Operating Area To-247
Thermal Impedance To-247
Output Characteristics
Transfer Characteristics
4/12
STP12NK80Z STB12NK80Z STW12NK80Z
Transconductance Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
5/12
STP12NK80Z STB12NK80Z STW12NK80Z
Source-drain Diode Forward Characteristics Normalized BVDSS Temperature
Maximum Avalanche Energy Temperature
6/12
STP12NK80Z STB12NK80Z STW12NK80Z
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
7/12
STP12NK80Z STB12NK80Z STW12NK80Z
TO-220 MECHANICAL DATA
MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM.
8/12
STP12NK80Z STB12NK80Z STW12NK80Z
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
9/12
STP12NK80Z STB12NK80Z STW12NK80Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM.
10/12
STP12NK80Z STB12NK80Z STW12NK80Z
D2PAK FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137
BASE 1000
sales type
11/12
STP12NK80Z STB12NK80Z STW12NK80Z
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics GROUP COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
12/12
Other recent searches
ZL2103 - ZL2103 ZL2103 Datasheet
SLLS132C - SLLS132C SLLS132C Datasheet
MKK440-D-12 - MKK440-D-12 MKK440-D-12 Datasheet
GME965 - GME965 GME965 Datasheet
2SK1959 - 2SK1959 2SK1959 Datasheet
2CTD432024F1701 - 2CTD432024F1701 2CTD432024F1701 Datasheet
Privacy Policy | Disclaimer
© 2013 Datasheets.org.uk