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STB4NC60


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STB4NC60 - STB4NC60  

STB4NC60
N-CHANNEL 600V 4.2A D2PAK PowerMeshTMII MOSFET
TYPE STB4NC60
VDSS 600V
RDS(on)
4.2A
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION PowerMESHTMII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns swithing speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVERS
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR
Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Parameter
Value 16.8
Unit W/°C V/ns
PTOT
Drain Current (pulsed)
dv/dt(1) Tstg
width limited safe operating area (1)ISD 4.2A, di/dt 300A/µs, (BR)DSS, JMAX.
October 2001
STB4NC60
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 1.25 62.5 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V,
DYNAMIC
Symbol Ciss Coss Crss Parameter
Forward Transconductance Input Capacitance
Output Capacitance Reverse Transfer Capacitance
Min. Min.
Typ.
±100
Max.
Unit
Test Conditions
Typ.
Max.
Unit
ID(on) RDS(on)max, 25V, MHz,
STB4NC60
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 300V, (see test circuit, Figure 480V, Min. Typ. 16.5 23.1 Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 480V, 4.2A, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 4.2A, di/dt 100A/µs, 100V, 150°C (see test circuit, Figure Test Conditions Min.
Typ.
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Max.
Unit
16.8
Thermal Impedance
STB4NC60
Output Characteristics Tranfer Characteristics
Tranconductance
Static Drain-Source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STB4NC60
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STB4NC60
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STB4NC60
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 inch
1.75
0.590 0.050 0.055 0.094
0.192
0.334
0.368 0.208 0.625 0.055 0.068 0.126
0.053
0.015
STB4NC60
D2PAK FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. MIN.
TAPE MECHANICAL DATA
DIM. MIN. 10.5 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN.
1.59 11.4 11.9 0.25 23.7 1.65
15.7
MAX.
MAX. 12.992
inch
MIN.
0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000
12.8
13.2 26.4 30.4
20.2
24.4
BASE 1000
MAX.
0.413 0.421 0.618 0.626 0.059 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 0.062 0.063
1.574 0.35 0.0098 0.0137 24.3 0.933 0.956
sales type
STB4NC60
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

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