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STB4NC60
Top Searches for this datasheetSTB4NC60 - STB4NC60 STB4NC60 N-CHANNEL 600V 4.2A D2PAK PowerMeshTMII MOSFET TYPE STB4NC60 VDSS 600V RDS(on) 4.2A TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION PowerMESHTMII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns swithing speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVERS D2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDGR Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Parameter Value 16.8 Unit W/°C V/ns PTOT Drain Current (pulsed) dv/dt(1) Tstg width limited safe operating area (1)ISD 4.2A, di/dt 300A/µs, (BR)DSS, JMAX. October 2001 STB4NC60 THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 1.25 62.5 °C/W °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. Typ. Max. Unit Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, DYNAMIC Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Min. Typ. ±100 Max. Unit Test Conditions Typ. Max. Unit ID(on) RDS(on)max, 25V, MHz, STB4NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 300V, (see test circuit, Figure 480V, Min. Typ. 16.5 23.1 Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 480V, 4.2A, 4.7, (see test circuit, Figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 4.2A, di/dt 100A/µs, 100V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Safe Operating Area Max. Unit 16.8 Thermal Impedance STB4NC60 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source Resistance Gate Charge Gate-source Voltage Capacitance Variations STB4NC60 Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature Source-drain Diode Forward Characteristics STB4NC60 Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times STB4NC60 D2PAK MECHANICAL DATA DIM. MIN. 4.88 1.27 5.28 15.85 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 inch 1.75 0.590 0.050 0.055 0.094 0.192 0.334 0.368 0.208 0.625 0.055 0.068 0.126 0.053 0.015 STB4NC60 D2PAK FOOTPRINT TUBE SHIPMENT suffix)* TAPE REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. MIN. TAPE MECHANICAL DATA DIM. MIN. 10.5 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. 1.59 11.4 11.9 0.25 23.7 1.65 15.7 MAX. MAX. 12.992 inch MIN. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 12.8 13.2 26.4 30.4 20.2 24.4 BASE 1000 MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 0.062 0.063 1.574 0.35 0.0098 0.0137 24.3 0.933 0.956 sales type STB4NC60 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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