SPP07N60S5 SPI07N60S5
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Feature revolutionary high voltage technology Worldwide best RDS(on) Ultra gate charge Periodic avalanche rated Extreme dv/dt rated Ultra effective capacitances Improved transconductance
P-TO220-3-1
RDS(on)
PG-TO262
PG-TO220
Type
Package
Ordering Code
Marking
SPP07N60S5 SPI07N60S5
Maximum Ratings Parameter
PG-TO220 PG-TO262
Q67040-S4172 Q67040-S4328
07N60S5 07N60S5
Symbol
Value
Unit
Continuous drain current
Pulsed drain current, limited Tjmax Avalanche energy, single pulse
puls
14.6
Avalanche energy, repetitive limited Tjmax1)
Avalanche current, repetitive limited Tjmax Gate source voltage Gate source voltage >1Hz)
Power dissipation, 25°C
Ptot
-55. +150
Operating storage temperature
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Maximum Ratings Parameter Symbol Value Unit
Drain Source voltage slope
dv/dt
V/ns
Thermal Characteristics Parameter Symbol min. RthJC RthJA RthJA Values typ. max. Unit
Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area Soldering temperature, wavesoldering (0.063 in.) from case
Tsold
Electrical Characteristics, Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit
Drain-source breakdown voltage V(BR)DSS GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS GS=0V, ID=7.3A breakdown voltage Gate threshold voltage Zero gate voltage drain current
VGS(th)
ID=350µ, VGS=V
0.54 1.46
DS=600V, VGS=0V, Tj=25°C, Tj=150°C
Gate-source leakage current
GS=20V, VDS=0V GS=10V, ID=4.6A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Electrical Characteristics unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss
GS=0V, DS=0V 480V DS2*I D*RDS(on)max,
ID=4.6A
Symbol
Conditions min.
Values typ. max.
Unit
GS=0V, DS=25V, f=1MHz
Effective output capacitance,3) Co(er) energy related Effective output capacitance,4) Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time d(on) d(off)
DD=350V, GS=0/10V,
ID=7.3A, RG=12
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
VDD=350V, ID=7.3A
16.5
VDD=350V, ID=7.3A, VGS=0
V(plateau) VDD=350V, ID=7.3A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. fixed capacitance that gives same stored energy Coss while rising from
o(er)
DSS.
o(tr) fixed capacitance that gives same charging time Coss while rising from VDSS.
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge
VGS=0V, IF=IS VR=350V, F/dt=100A/µs
Symbol
Conditions min.
TC=25°C
Values typ. max. 14.6 1275
Unit
Typical Transient Thermal Characteristics Symbol
Thermal resistance 0.024 0.046 0.085 0.308 0.317 0.112
Value typ.
Unit
Symbol
Value typ.
Unit
Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 Ws/K
th,n
case
xternal eatsink
th,n
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Power dissipation
Ptot (TC)
SPP07N60S5
Safe operating area
parameter C=25°C
Ptot
0.001 0.01
Typ. output characteristic
(VDS); Tj=25°C parameter:
Typ. output characteristic
(VDS); Tj=150°C parameter:
8.5V
7.5V
6.5V
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Typ. drain-source resistance
RDS(on)=f(ID) parameter: Tj=150°C,
Drain-source on-state resistance
RDS(on) (Tj) parameter
SPP07N60S5
RDS(on)
RDS(on)
8.5V 7.5V 6.5V
Typ. transfer characteristics
RDS(on)max parameter:
Typ. gate charge
Gate) parameter: pulsed
SPP07N60S5
Gate
Page
Rev.
20079-11-27
SPP07N60S5 SPI07N60S5
Forward characteristics body diode
(VSD) parameter:
SPP07N60S5
Avalanche
(tAR) par.:
j(START) =25°C
(98%) (98%)
j(START) =125°C
Avalanche energy
(Tj) par.:
Drain-source breakdown voltage
V(BR)DSS (Tj)
SPP07N60S5
V(BR)DSS
Page
Rev.
2009-11-27
SPP07N60S5 SPI07N60S5
Avalanche power losses
parameter: AR=0.5mJ
Typ. capacitances
(VDS) parameter: GS=0V,
Ciss
Coss
Crss
Typ. Coss stored energy
Eoss=f(VDS)
Typ. gate threshold voltage
VGS(th) (Tj) parameter:
Eoss
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Definition diodes switching characteristics
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
PG-TO220-3-1, PG-TO220-3-21
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
PG-TO262-3-1, PG-TO262-3-21
Rev.
Page
2009-11-27
SPP07N60S5 SPI07N60S5
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev.
Page
2009-11-27
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