SKW25N120
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SKW25N120 - SKW25N120
SKW25N120 - SKW25N120
SKW25N120
Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode
40lower Eoff compared previous generation Short circuit withstand time Designed for: Motor controls Inverter SMPS NPT-Technology offers: very tight parameter distribution high ruggedness, temperature stable behaviour parallel switching capability
P-TO-247-3-1 (TO-247AC)
Complete product spectrum PSpice Models http://www.infineon.com/igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage collector current 25°C 100°C Pulsed collector current, limited Tjmax Turn safe operating area 1200V, 150°C Diode forward current 25°C 100°C Diode pulsed current, limited Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation 25°C Operating junction storage temperature Soldering temperature, 1.6mm (0.063 in.) from case Tstg -55.+150
1200V
Eoff 2.9mJ
150°
Package TO-247A
Ordering Code Q67040-S4282
Symbol
Value 1200
Unit
ICpul
IFpul Ptot
15V, 100VVCC 1200V, 150°
Allowed number short circuits: <1000; time between short circuits: >1s. Jul-02
Power Semiconductors
SKW25N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Electrical Characteristic, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance Measured (0.197 in.) from case Short circuit collector current
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA TO-247A
1.15
Symbol
Conditions
Value min. 1200 typ. max.
Unit
1.75
VGE(th) ICES
VCE=VGE =1200V,V
1400 2600
IGES Ciss Coss Crss QGate IC(SC)
=0V,V =20V
2150
Allowed number short circuits: <1000; time between short circuits: Jul-02
Power Semiconductors
SKW25N120
Switching Characteristic, Inductive Load, Tj=25 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate fall reverse recovery current during Irrm A/µs td(on) td(off) Eoff Energy losses include "tail" diode reverse recovery. Symbol Conditions Value Min. typ. max. Unit
Switching Characteristic, Inductive Load, Tj=150 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate fall reverse recovery current during
Symbol
Conditions
Value Min. typ. max.
Unit
td(on) td(off) Eoff
Energy losses include "tail" diode reverse recovery.
Irrm
A/µs
Leakage inductance stray capacity dynamic test circuit figure
Power Semiconductors
Jul-02
SKW25N120
100A
100A
tp=1µs 15µs
COLLECTOR CURRENT
COLLECTOR CURRENT
50µs 200µs
TC=80°
TC=110°C
0.1A
10Hz
100Hz
1kHz
10kHz
100kHz
100V
1000V
SWITCHING FREQUENCY Figure Collector current function switching frequency 150°C, 0.5, 800V, +15V/0V,
VCE, COLLECTOR-EMITTER VOLTAGE Figure Safe operating area 25°C, 150°C)
350W 300W 250W 200W 150W 100W
COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100°
125°
100°
125°
CASE TEMPERATURE Figure Power dissipation function case temperature 150°C)
CASE TEMPERATURE Figure Collector current function case temperature (VGE 15V, 150°C)
Power Semiconductors
Jul-02
SKW25N120
COLLECTOR CURRENT
COLLECTOR CURRENT
=17V
=17V
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristics 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristics 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
IC=50A IC=25A
COLLECTOR CURRENT
Tj=+150°C Tj=+25°C Tj=-40°
IC=12.5A
-50°
100°
150°
VGE, GATE-EMITTER VOLTAGE Figure Typical transfer characteristics (VCE 20V)
JUNCTION TEMPERATURE Figure Typical collector-emitter saturation voltage function junction temperature (VGE 15V)
Power Semiconductors
Jul-02
SKW25N120
1000ns td(off)
1000ns
td(off)
SWITCHING TIMES
100ns
SWITCHING TIMES
100ns td(on)
td(on)
10ns
10ns
COLLECTOR CURRENT Figure Typical switching times function collector current (inductive load, 150°C, 800V, +15V/0V, dynamic test circuit Fig.E
GATE RESISTOR Figure Typical switching times function gate resistor (inductive load, 150°C, 800V, +15V/0V, 25A, dynamic test circuit Fig.E
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
1000ns td(off)
SWITCHING TIMES
max.
100ns td(on) 10ns -50°
typ.
min.
100°
150°
-50°
100°
150°
JUNCTION TEMPERATURE Figure Typical switching times function junction temperature (inductive load, 800V, +15V/0V, 25A, dynamic test circuit Fig.E
JUNCTION TEMPERATURE Figure Gate-emitter threshold voltage function junction temperature 0.3mA)
Power Semiconductors
Jul-02
SKW25N120
25mJ
include losses diode recovery.
10mJ Ets*
include losses diode recovery.
Ets*
SWITCHING ENERGY LOSSES
15mJ
SWITCHING ENERGY LOSSES
20mJ
Eon*
Eon* Eoff
10mJ Eoff
COLLECTOR CURRENT Figure Typical switching energy losses function collector current (inductive load, 150°C, 800V, +15V/0V, dynamic test circuit Fig.E
GATE RESISTOR Figure Typical switching energy losses function gate resistor (inductive load, 150°C, 800V, +15V/0V, 25A, dynamic test circuit Fig.E
include losses diode recovery.
ZthJC, TRANSIENT THERMAL IMPEDANCE
Ets*
D=0.5
SWITCHING ENERGY LOSSES
0.05
R,(K/W) 0.07417 0.20899 0.08065 0.03681
Eon*
Eoff
0.02 0.01
0.4990 0.08994 0.00330 0.00038
-50°
100°
150°
single pulseC 10µs 100µs 10ms 100ms
JUNCTION TEMPERATURE Figure Typical switching energy losses function junction temperature (inductive load, 800V, +15V/0V, 25A, dynamic test circuit Fig.E
PULSE WIDTH Figure IGBT transient thermal impedance function pulse width
Power Semiconductors
Jul-02
SKW25N120
Ciss
VGE, GATE-EMITTER VOLTAGE
CAPACITANCE
UCE=960V
Coss
100n
200n
300n
100pF
Crss
QGE, GATE CHARGE Figure Typical gate charge 25A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical capacitance function collector-emitter voltage (VGE 1MHz)
30µs
500A
tsc, SHORT CIRCUIT WITHSTAND TIME
25µs
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
400A
20µs
300A
15µs
200A
10µs
100A
VGE, GATE-EMITTER VOLTAGE Figure Short circuit withstand time function gate-emitter voltage (VCE 1200V, start 25°C)
VGE, GATE-EMITTER VOLTAGE Figure Typical short circuit collector current function gate-emitter voltage (100VVCE 1200V, 25°C, 150°C)
Power Semiconductors
Jul-02
SKW25N120
500ns
300ns
IF=25A
Qrr, REVERSE RECOVERY CHARGE
400ns
IF=25A
trr, REVERSE RECOVERY TIME
IF=12A
200ns
IF=12A
100ns
300A/µs
500A/µs
700A/µs
900A/µs
300A/µs
500A/µs
700A/µs
900A/µs
DIODE CURRENT SLOPE Figure Typical reverse recovery time function diode current slope 800V, 150°C, dynamic test circuit Fig.E
DIODE CURRENT SLOPE Figure Typical reverse recovery charge function diode current slope 800V, 150°C, dynamic test circuit Fig.E
400A/µs
REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
DIODE PEAK RATE FALL
IF=25A
300A/µs
IF=12A
200A/µs
IF=12A
IF=25A
100A/µs
300A/µs
500A/µs
700A/µs
900A/µs
0A/µs 300A/µs
500A/µs
700A/µs
900A/µs
DIODE CURRENT SLOPE Figure Typical reverse recovery current function diode current slope 800V, 150°C, dynamic test circuit Fig.E
diF/dt, DIODE CURRENT SLOPE Figure Typical diode peak rate fall reverse recovery current function diode current slope 800V, 150°C, dynamic test circuit Fig.E
Power Semiconductors
Jul-02
SKW25N120
3.0V
IF=50A
2.5V
FORWARD VOLTAGE
FORWARD CURRENT
TJ=150°
2.0V
IF=25A
1.5V
TJ=25°20A
1.0V
IF=12A
0.5V
0.0V
120°
FORWARD VOLTAGE Figure Typical diode forward current function forward voltage
JUNCTION TEMPERATURE Figure Typical diode forward voltage function junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.05
R,(K/W) 0.05339 0.40771 0.22473 0.46420
(s)= 0.30438 0.09698 0.00521 0.00042
single pulse 10µs
100µs
10ms
100ms
PULSE WIDTH Figure Diode transient thermal impedance function pulse width
Power Semiconductors
Jul-02
SKW25N120
TO-247Asymbol
dimensions
[mm] 5.28 2.51 2.29 1.32 2.06 3.18
[inch] 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Power Semiconductors
Jul-02
SKW25N120
Figure Definition diodes switching characteristics
p(t)
Figure Definition switching times
Figure Thermal equivalent circuit
Figure Definition switching losses
Figure Dynamic test circuit Leakage inductance =180nH, stray capacity =40pF.
Power Semiconductors
Jul-02
SKW25N120
Published Infineon Technologies Gr., Bereich Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Representatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Power Semiconductors
Jul-02
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