SIGC42T60NC
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SIGC42T60NC - SIGC42T60NC
SIGC42T60NC
FEATURES: 600V technology 100µm chip positive temperature coefficient easy paralleling
This chip used for: IGBT-Modules Applications: drives
Chip Type SIGC42T60NC
600V
Size
Package sawn foil
Ordering Code Q67041-A4692A001
MECHANICAL PARAMETER: Raster size Area total active Emitter size Gate size Thickness Wafer size Flat position Max.possible chips wafer Passivation frontside Emitter metallization Collector metallization bond Wire bond Reject Size Recommended Storage Environment 42.25 35.6 3.0x2.85 Photoimide 3200 1400 -system suitable epoxy soft solder bonding electrically conductive glue solder 500µm 0.65mm 1.2mm store original container, nitrogen, month ambient temperature 23°C
Edited INFINEON Technologies HV3, 7272-M, Edition 20.03.2003
SIGC42T60NC
MAXIMUM RATINGS: Parameter Collector-emitter voltage collector current, limited Tjmax Pulsed collector current, limited Tjmax Gate emitter voltage Operating junction storage temperature Symbol Icpuls Value +150 Unit
STATIC CHARACTERISTICS (tested chip), Tj=25 unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions min. VGE=0V, =2mA VGE=15V, =50A =1mA, VGE=VCE VCE=600V, VGE=0V VCE=0V, VGE=30V Value typ. max. Unit
DYNAMIC CHARACTERISTICS (tested component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions =1MHz Value min. typ. max. Unit
SWITCHING CHARACTERISTICS (tested component), Inductive Load: Parameter Turn-on delay time Rise time Turn-off delay time Fall time Symbol d(on) td(off) Conditions =300V =50A Value min. typ. max. Unit
Edited INFINEON Technologies HV3, 7272-M, Edition 20.03.2003
SIGC42T60NC
CHIP DRAWING:
Edited INFINEON Technologies HV3, 7272-M, Edition 20.03.2003
SIGC42T60NC
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers device data sheet
Description: 0,65 visual inspection according failure catalog Electrostatic Discharge Sensitive Device according MIL-STD Test-Normen
Published Infineon Technologies Bereich Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 2002 Rights Reserved.
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Representatives world-wide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support maintain sustain protect human life. they fail, reasonable assume that health user other persons endangered.
Edited INFINEON Technologies HV3, 7272-M, Edition 20.03.2003
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