REH983

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FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES APPLICATION MANUAL
REH983
Chapter Features IGBT-IPM Characteristics. R-IPM Characteristics. Definition Type Name R-IPM Line Chapter Explanation Symbols/Terminology Symbols Block Diagram. Technical Terms Definitions Chapter Explanation Functions Built-in Electric Functions Explanation Functions Timing chart. Chapter Examples Application Circuits Entire Circuit. Precautions Opto-couplers. Connector. Chapter Cooling Design Junction Temperature. Precautions Heat Sink Selection Chapter Precautions Using R-IPM Main Power Source Control Power Source Protection Operation. Reliability Others.
REH983
Chapter Features
IGBT-IPM Characteristics
intelligent power module (IPM) following characteristics when compared with combination conventional IGBT modules drive circuits. 1.1.1 Built-in drive circuit IGBT gate drives operate under optimal conditions. Since wiring length between internal drive circuit IGBT short impedance drive circuit low, reverse bias source required. R-series (R-IPM) devices require four control power sources, source lower side, three individual sources upper side with proper circuit isolation. 1.1.2 Built-in protection circuits following built-in protective circuits included R-IPM devices: (OC): Overcurrent protection (SC): Short-circuit protection (UV): Undervoltage protection control power source (OH): Overheating protection (ALM): External alarm output protection circuits provide protection against IGBT damage caused overcurrent load short-circuits. These circuits monitor collector current each IGBT using detection elements and, thus minimize possibility severe damage IGBT. They also protect against short-circuits. Over Current protection=OC, Short Circuit protection=SC. protection circuit IGBT drive circuits. This circuit monitors supply voltage level against IGBT drive Vin. event that level falls below specified level, drive biased turn IGBT. Because possible erratic voltage fluctuation drive source, hysteresis added circuit prevent premature shutdown. Under Voltage protection=UV. protection circuit protects IGBT from overheating. also monitors insulating substrates with temperature detection elements installed insulating substrates inside Case Temperature Over Heating protection=TcOH Additionally, each IGBT chip R-IPM contains temperature detection element IGBT die, which allows rapidly when abnormal higher chip temperatures detected. protective operation time TjOH after overheating detected faster than that TcOH time. Junction Temperature Over Heating protection=TjOH. circuit outputs alarm signal outside only monitored from lower IGBTs. possible shutdown system reliably issuing alarm signal when circuit detects abnormal condition (specified above).
This signal typically sent microcomputer controlling when protection functions TcOH lower side TjOH detected. 1.1.3 Built-in brake circuit IPM) drive circuits protection circuits included brake IGBT same inverter IGBTs. motor control inverter application, brake circuit built protect over voltage just adding power dissipating resistor. dynamic brake IGBT fault information also sent output 1.1.4 Structural features insulation structure ceramic substrates enables mount directly heat sink, allowing more efficient cooling. control signal terminals lined with standard pitch 2.54mm connected connector. Using guide pins, also insert connector printed circuit board mounting.
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main power source input brake output (B), output terminal arranged nearby, providing package structure that allows easy wiring. main terminals connected large current supply with screws reliably. Electrical connections (made screws connectors) require soldering, allowing ease module removal necessary.
R-IPM Characteristics
1.2.1 electrical characteristics equal those 600V N-series 1200V Sseries IGBTs. surge noise soft switching, contributing counter measures. Total losses reduced because improved trade-off between (sat) switching loss characteristics. 1.2.2 Higher reliability comparison with conventional Fuji IPMs (J-Series N-Series IPMs), reliability improved significantly reducing number components IGBT chips protected from abnormal overheating detection function. 1.2.3 Package compatibility Medium-capacity series main terminal, control terminal, mounting hole positions 600V series 150A, 1200V series 1-package, 1-package) compatible with those conventional Fuji IPMs (JSeries N-Series IPMs Large-capacity series main terminal mounting hole positions compatible with those 600V series 200A 300A, 1200V series 100A 150A 1-package, 1-package) J-IPM. configuration control terminals same that packages 600V/150A lower, same connector applied. Built-in brake IGBT also available. height cover lower than that conventional Fuji models, allowing compactness while maintaining compatibility utilize R-series devices when replacing IPMs older designs.
Definition Type Name
Type name 7MBP50RA-060-01 -060-
Additional model number necessary) Voltage rating Additional number series Series name Inverter IGBT current rating Indicates IGBT-IPM Number main elements chip circuit with brake built-in chip circuit without dynamic brake
8101
Additional number Month production Sep. Oct. Nov. Dec. Year production 1998
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R-IPM Line
Type Name 7MBP50RA060 7MBP75RA060 7MBP100RA060 7MBP150RA060 7MBP200RA060 7MBP300RA060 6MBP50RA060 6MBP75RA060 6MBP100RA060 6MBP150RA060 6MBP200RA060 6MBP300RA060 7MBP25RA120 7MBP50RA120 7MBP75RA120 7MBP100RA120 7MBP150RA120 6MBP25RA120 6MBP50RA120 6MBP75RA120 6MBP100RA120 6MBP150RA120 Package P610 P611 P612 P610 P611 P612 P610 P611 P612 P610 P611 P612 1200V 1200V 600V 600V VCES IGBT Current Inverter Brake 100A 150A 200A 300A 100A BRAKE 100A 150A 200A 300A 100A 150A BRAKE 100A 150A
REH983
Chapter Explanation Symbols/Terminology
Symbols Block Diagram
Symbol RALM Description value Zener diode that determines signal (off signal) voltage control signal input terminal specified electrical characteristics spec sheet. Resistance determine primary current opto-coupler insulated alarm output (ALM). About 10mA current flows Vcc=15V when alarm output. value RALM specified electrical characteristics spec table.
2.1.1 Terminal symbols Terminal Symbol (10) (11) (13) (14) (15) (12) (16) Control power source input upper phase side, side Control power source input upper phase side, side Control power source input upper phase side, side Control power source input lower common Vcc: side, GND: side Control signal input upper phase Control signal input upper phase Control signal input upper phase Control signal input lower phase Control signal input lower phase Control signal input lower phase Control signal input lower brake phase Alarm signal output when protection circuits operating 3-phase inverter output terminal Description Main power source input terminal inverter bridge. side, side Brake output terminal: terminal connect resistor regenerative operation declaration
REH983
Technical Terms Definitions
Term voltage voltage (surge) voltage (short circuit) Collector-emitter voltage Reverse voltage Collector current forward current Collector power dissipation Chip junction temperature Control power source voltage Input voltage Input current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage Collector-emitter cutoff current Collector-emitter saturation voltage Diode forward voltage Power supply current P-line side pre-driver Power supply current N-line side pre-driver Input signal threshold voltage Input zenor voltage Over heating protection temperature level Hysteresis Symbol (surge) VCES VALM IALM Tstg Viso ICES (sat) ICCP ICCN Vinth (on) Vinth (off) TCOH Description Explanation Voltage that applied between terminals Peak value surge voltage that applied between terminals switching source voltage between terminals that protected from short circuits/overcurrent Maximum collector-emitter voltage built-in IGBT chip repeated peak reverse voltage chip (only IGBT brake) Repeated peak reverse voltage chip brake section Maximum collector current IGBT chip Maximum pulse collector current IGBT chip Maximum forward current chip Maximum forward current chip brake section Maximum power dissipation IGBT element Maximum junction temperature IGBT chips during continuous operation Voltage that applied between each terminal Voltage that applied between each terminal Current flown between each terminal Voltage that applied between terminal Current that flown between terminal Range ambient temperature storage transportation, when there electrical load Range case temperature electrical operation (Fig. shows measuring point case temperature Maximum effective value sine-wave voltage between terminals heat sink, when terminals shorted simultaneously. Collector current when specified voltage applied between collector emitter IGBT with input signal (=Vz) Collector-emitter voltage specified collector current when input signal only elements measured (=0V) other input elements (=Vz) Forward voltage specified forward current with input signal (=Vz) Current between each side (upper side) control power source Current between side (lower side) control power source Control signal voltage when IGBT changes from Control signal voltage when IGBT changes from Clamp voltage between each when control signal Case temperature which overheat protection circuit operates Difference between TcOH case temperature which overheat protection reset after lowering
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IGBT chips over heating protection temperature level Hysteresis Overcurrent protective operation current Overcurrent time Undervoltage protection level Hysteresis Signal hold time Short circuit protection delay time Limiting resistor alarm Switching time Chip-case thermal resistance Chip-fin thermal resistance Screw torque mounting Screw torque terminal Weight switching frequency Reverse recovery current Reverse bias safe operation area Switching loss
TjOH tDOC tALM RALM (j-c) (c-f)
Junction temperature which overheat protection circuit operates Difference between TjOH junction temperature which overheat protection reset after lowering IGBT collector current which overcurrent protection (OC) works Shown Fig. which control source voltage lowering protection (UV) works Difference between which protection reset with rise after operation Period which alarm continues output (ALM) from terminal after side protection function actuated Shown Fig. Built-in resistance limiting primary current opto-coupler output Shown Fig.
Chip-case thermal resistance IGBT Thermal resistance between case heat sink, when mounted heat sink recommended torque using thermal compound Screw torque when mounting onto heat sink Screw torque electrical connection main terminal
RBSOA Eoff
Weight Range control signal frequencies input into control signal input terminal Shown Fig. Area current voltage which IGBT cutoff under specified conditions during turn-off IGBT switching loss during turn-on IGBT switching loss during turn-off switching loss during reverse recovery
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Fig. Measuring point
P610/ P611
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Fig. Measuring point
P612
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IALM tDOC
Fig.
Overcurrent time
IALM
IALM
IALM
Fig.
Short circuit protection delay time
Input Signal (Vin)
Vinth(on)
Vinth(off)
Collector Current (Ic)
Fig. Switching time
toff
REH983
Chapter
Explanation Functions
Built-in Electric Functions
IGBT 3-phase inverter IGBT brake (Since 6MBP**RA060 contains brake, terminal connected internally) Drive function IGBT (7MBP**RA060 contains also drive function brake) Overcurrent (OC) protection function IGBT Short circuit (SC) protection function IGBT Undervoltage protection (UV) drive circuits IGBT Chip overheating protection function (TjOH) IGBT Substrate temperature overheating protection function (TcOH) insulating substrate that mounts IGBT/FWD Alarm output function (ALM) indicate operation protection when N-line side TjOH, TcOH operates
Explanation Functions
3.2.1 IGBT 3-phase inverter shown Fig. contains IGBT 3-phase inverter they 3-phase connected inside IPM. Connecting main power source terminals 3-phase output lines terminals completes main wiring. Connect Snubber circuit suppress surge voltage. 3.2.2 IGBT brake shown Fig. contains IGBT brake they connected internally terminal. controlling brake IGBT through connection brake resistance terminal, energy dissipated while decelerating suppress rise voltage between terminals. 3.2.3 Drive function IGBT drive function IGBT contained following characteristics. Soft switching dv/dt ON/OFF controlled independently characteristics drive elements without using single gate resistance (Rg). Single power source drive without negative bias Since cable between drive circuit IGBT short thus wiring impedance low, driven without negative bias. lower side common control driven power source. Four isolated sources required drive whole IPM. Error prevention Since circuit ground gate voltage with impedance while OFF, error caused rise noise prevented.
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3.2.4 Overcurrent protection function (OC) overcurrent protection IGBT provided through detection collector current. exceeded level period about (tDOC), soft IGBT cutoff performed. However, level falls below level period shorter than tDOC, signal entered tDOC period, protection function does work. Both work while OFF. protection function mounted IGBTs including brake. Small detection losses detection current that flows current sense IGBT contained IGBT chip very small compared with main IGBT. Therefore, possible make detection loss smaller than that caused shunt resistance. Built-in latch prevent malfunctioning (common also whole protection function latch period about 2ms, even signal entered during latch period, IGBT which protection actuated does operate. Since each phase mutually connected lower side including brake, IGBTs lower side stop latch period lower side performs protection operation. Soft cutoff (common also Since soft IGBT cutoff occurs when protection circuit operates, di/dt during cutoff small surge voltage suppressed low. Operation delay time (period which protection operation carried out) Since protection actuated only level exceeded level continuously period tDOC, malfunctioning instantaneous overcurrent noise caused. 3.2.5 Short circuit protection function (SC) protection function always cooperates with protection function suppress peak current when load shorted. 3.2.6 Undervoltage protection (UV) protection function carries soft IGBT cutoff control source voltage (Vcc) falls when input signal Since hysteresis set, alarm canceled when returns input signal OFF.
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3.2.7 Case temperature overheating protection function (TcOH) TcOH protection function detects insulating substrate temperature with temperature detection elements same ceramic substrate that which power chips (IGBT FWD) protection function activated detected temperature exceeds protection temperature level continuously (TcOH) specified period time (about 1ms). input signal lower side IGBT soft cutoff occurs IGBT lower side held latch period about 2ms. hysteresis hysteresis also TcOH prevent chattering. case temperature falls below TcOH-TcH after latch period about 2ms, protection released. Protection operation delay time prevent malfunctioning noise, protection function actuated only TcOH exceeded continuously period about (tDOH). 3.2.8 Chip temperature overheating protection function (TjOH) TjOH protection function detects IGBT chip temperature with temperature detection elements IGBT chips. protection function activated detection temperature exceeds protection temperature level continuously (TjOH) specified period time (about 1ms). input signal soft IGBT cutoff occurs IGBT stops latch period 2ms. TjOH protection lower actuated, IGBTs lower side stop latch period 2ms. hysteresis hysteresis also TjOH prevent chattering. chip temperature falls below TjOH-TjH after latch period input signal OFF, protection released. Protection operation delay time prevent malfunctioning noise, protection function only activated TjOH exceeded continuously period about (tDOH). 3.2.9 Alarm output function (ALM) Alarms output during latch period each protection operation lower side TjOH, TcOH. even after latch period passes, protection alarm reset. such case, protection alarm reset immediately after changes OFF. Upper alarm output when protection operation (OC, TjOH) occurred only upper side. input signal after latch period passes, protection released. Alarm mutual connection lower Since alarm terminals each drive lower side connected mutually, IGBT lower side including stop during alarm output. input signal after latch period passes, protection released. 3.2.10 internal block diagram Fig. shows internal block diagram (with brake circuit). Fig. shows internal block diagram (without brake circuit).
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Fig.
internal block diagram (with brake)
VccU VinU
Pre-Driver
GNDU VccV VinV
Pre-Driver
GNDV VccW VinW
Pre-Driver
GNDW VinX
Pre-Driver
VinY
Pre-Driver
VinZ
Pre-Driver
VinDB
Pre-Driver
RALM
1.5k
Over heating protection circuit
Pre-drivers include following functions Amplifier driver Short circuit protection Under voltage lockout circuit Over current protection IGBT chip over heating protection
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Fig.
internal block diagram (without brake)
VccU VinU
Pre-Driver
GNDU VccV VinV
Pre-Driver
GNDV VccW VinW
Pre-Driver
GNDW VinX
Pre-Driver
VinY
Pre-Driver
VinZ
Pre-Driver
RALM
1.5k
Over heating protection circuit
Pre-drivers include following functions Amplifier driver Short circuit protection Under voltage lockout circuit Over current protection IGBT chip over heating protection
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Timing Chart
following figures show timing chart protection function. Undervoltage protection (UV) (Timing Chart
VUV+VH
<5uS <5uS
tALM
tALM
below during alarm output. period which falls below shorter than 5µs, protection does work (while OFF) alarm output when period about passes after falls below OFF, IGBT maintains OFF. alarm output only upper falls below VUV) returns after tALM passes, reset after tALM passes alarm also reset simultaneously. period which falls below shorter than 5µs, protection does work (while ON). alarm output when period about passes after falls below soft IGBT cutoff occurs. alarm output only upper falls below VUV). returns after tALM passes, reset after tALM passes alarm also reset simultaneously. alarm output falls below during OFF.
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Under voltage protection (UV) (Timing Chart
VUV+VH
tALM tALM
below during alarm output. (Until changes OFF) returns after tALM passes, alarm reset simultaneously with return OFF. Even returns after tALM passes, reset after tALM passes alarm reset simultaneously with OFF. during OFF, alarm output, soft IGBT cutoff occurs while below VUV.
REH983
Overcurrent protection (OC) (Timing Chart
tDOC tALM tDOC tALM
<tDOC <tDOC
alarm output soft IGBT cutoff occurs when tDOC passes after rises above Ioc. alarm output upper arm. alarm reset simultaneously when tALM passes. alarm output soft IGBT cutoff occurs when tDOC passes after rises above Ioc. alarm output upper arm. when tALM passes, reset. alarm reset simultaneously when OFF. changes before tDOC passes after rises above Ioc, protection function activated normal IGBT cutoff occurs. changes before tDOC passes after rises above Ioc. protection function activated normal IGBT cutoff occurs.
REH983
Short circuit protection (SC) (Timing Chart
tDOC tALM tDOC tALM
<tDOC <tDOC
load shorts after started flowing exceeds Isc, peak suppressed instantly. alarm output soft IGBT cutoff occurs when tDOC passes. alarm output upper arm. alarm reset simultaneously when tALM passes. load shorted exceeded simultaneously with start flow peak instantly suppressed. alarm output soft IGBT cutoff occurs after tDOC passes. alarm output upper arm. when tALM passes, reset. alarm reset simultaneously when OFF. load shorted after started flow exceeds Isc, peak suppressed instantly. Then, changes before tDOC passes, protection function activated normal IGBT cutoff occurs. load shorted simultaneously with start flow exceeds Isc, peak suppressed instantly. Then, changes before tDOC passes, protection function activated normal IGBT cutoff occurs.
REH983
Case temperature overheating protection (TcOH) (Timing Chart
TcOH TcOH-TcH
tALM
tALM
tALM
alarm output case temperature continuously exceeds TcOH period about 1ms, soft cutoff IGBT lower side occurs. falls below TcOH-TcH before tALM passes, alarm reset when tALM passes. exceeds continuously TcOH period about 1ms, alarm output. (While OFF) fallen below TcOH-TcH when tALM passes, alarm reset. When falls below TcOH-TcH after tALM passes, alarm reset.
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IGBT chip overheating protection (TjOH)-1 (Timing Chart
TjOH TjOH-TjH
tALM
tALM
tALM
alarm output soft IGBT cutoff occurs IGBT chip temperature continuously exceeds TjOH period about 1ms. alarm output upper arm. falls below TjOH-TjH before tALM passes, alarm simultaneously reset when tALM passes. alarm output continuously exceeds TjOH period about 1ms, OFF, protection function activated. alarm output upper arm. When falls below TjOH-TjH after tALM passes, alarm reset simultaneously OFF.
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IGBT chip overheating protection (TjOH)-2 (Timing Chart
TjOH TjOH-TjH
3uS<
tALM
<1mS
<1mS
tALM
exceeds TjOH then falls below TjOH within about 1ms, does operate regardless whether OFF. exceeds TjOH then falls below TjOH within about 1ms, does operate regardless whether OFF. exceeds TjOH then falls below TjOH period about longer, operates when period which exceeds TjOH passes about 1ms.
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Chapter Examples Application Circuits
Entire Circuit
Fig. shows application circuit example (with brake type).
0.1uF 10uF
AC200V
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
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Fig. shows application circuit example brake type).
0.1uF 10uF
AC200V
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
0.1uF 10uF
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Precautions
4.2.1 Control power source shown Fig. Fig. four isolated control sources, upper side=3 lower side=1, required. standard power supply unit, connect terminal power output. connect terminal output, malfunction result because each power source connected ground power source input. Reduce stray capacitance between each power source ground much possible. 4.2.2 Structural isolation among four power sources (input connectors boards) Isolation needed between four power sources each main power source. Since large amount dv/dt applied this isolation during IGBT switching, keep sufficient clearance between components isolation. (2mm more recommended) 4.2.3 connection control power source lower side main power source connected inside IPM. Never connect them outside IPM. connect them outside IPM, loop currents generated inside outside flow lower cause malfunctioning opto-coupler IPM. input circuit also damaged. 4.2.4 Control power source capacitor Capacitors 10µF 0.1µF connected each control power source shown Fig. Fig. intended smoothing control power sources, compensating wiring impedance IPM. Capacitors smoothing needed separately. Since transient variations caused wiring impedance from capacitor control circuit, connect capacitor close control terminal possible. electrolytic capacitors, select those capacitors with lower impedance better frequency characteristics. addition, connect capacitors with better frequency characteristics, such film capacitors, parallel. When capacitors connected between input terminals, attention longer delay time after signals inputted primary side opto-coupler. 4.2.5 Pull-up signal input terminal Pull control signal input terminal with resistor 20k. Even brake brake built-in IPM, pull input terminal also. pull terminals, malfunction caused dv/dt. 4.2.6 Snubber Connect snubber terminals directly. P612 package snubber each terminal both sides. 4.2.7 terminal case package (without brake) type, connecting terminal terminal recommended. Avoid while terminal floating.
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Opto-couplers
4.3.1 Opto-coupler control input Opto-coupler rating those photo-couplers that satisfy following characteristics CMH=CML 15kV/µs 10kV/µs tpHL=tpLH 0.8µs tpLH-tpHL -0.4 0.9µs Example: Product HCPL-4504, HCPL-4506 Product Toshiba: TLP759 (IGM) Note: also safety standards such VDE, should applied. Wiring between opto-coupler Make wiring between opto-coupler short possible reduce wiring impedance between opto-coupler control terminal. Separate each wire between primary secondary circuits that floating capacitance small enough since strong dv/dt applied between primary secondary circuits. Light Emitting Diode driving circuit dv/dt withstand capability opto-coupler also affected input light emitting diode driving circuit. driving circuit example shown Fig.
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Fig. Opto-coupler input circuit Good example: Totem pole output Current limiting resistor cathode side photo diode
Good example: Photo diode shorted transistors (example which particularly opto-coupler OFF)
example: Open collector
example: Current limiting resistor anode side photo diode
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4.3.2 Opto-coupler alarm output Opto-coupler rating Though general-purpose opto-couplers, recommend using opto-couplers with following characteristics. 100% 300% One-element packed type Example) TLP521-1-GR rank Note: Also safety standards such VDE, should applied. Input current limiting resistor current limiting resistor light emitting diode opto-coupler input contained IPM. RALM=1.5k connected directly Vcc, about 10mA flows with Vcc=15V. Therefore, there need connect current limiting resistor. However, large amount current Iout 10mA needed opto-coupler output, increase value opto-coupler required value. Wiring between opto-coupler Since large amount dv/dt applied also photo-coupler alarm, same note described 4.3.12) should taken.
Connector
connect control circuit R-IPM entirely using type connectors. connector should Au-plated electrode 2.54mm pitch. Recommended connector: Hirose Electric MDF7-25S-2.54DSA
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Chapter
Cooling Design
Junction Temperature
safeguard operation IGBT, make sure junction temperature does exceed Tjmax. Cooling should designed such that ensures that always below Tjmax even abnormal states such overload operation well under rated load. Operation IGBT temperatures higher than Tjmax could result damage chips. R-IPM, TjOH protection operates when chip temperature IGBT exceeds Tjmax. However, temperature rise quickly, chip protected. Likewise, notice that chip temperature should exceed Tjmax. concrete designs, refer following material. "IGBT MODULE SERIES APPLICATION MANUAL REH982" Contents: -Power dissipation loss calculation -Selecting heat sinks -Heat sink mounting precautions
Precautions Heat Sink Selection
select heat sinks described manual REH982. Note also following point. Flatness heat sink surface Flatness between mounting screw pitches: +100µm, roughness: 10µm less heat sink surface concave, arises between heat sink IPM, leading deterioration cooling efficiency. flatness +100µm more, copper base deformed cracks could caused internal isolating substrates.
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Chapter
Precautions Using R-IPM
Main Power Source
6.1.1 Voltage Range There four items spec (VDC, (surge), VSC, VCES) specify voltage main power source. (For their definitions, refer Chapter Technical Terms Definitions) following shows voltage range main power source obtained from these four items. Variation range main source: 400V less 600V series 800V less 1200V series Brake operation range: 400V less 600V series 800V less 1200V series protection operation range main power source inverters 400V less 600V series, 450V (=VDC) less rise within protection operation delay time included (For 1200V series, 800V less, 900V less respectively). maximum surge voltage during switching 500V (=VDC (SURGE)) less 600V series 1000V less 1200V series. ranges above, mount snubber circuits close terminals possible that these values less obtained. surge voltage caused wiring inductance inside di/dt during switching. circuits structure elements designed such that this maximum surge voltage suppressed 600V (=VCES) less 600V series (1200V less 1200V series). 6.1.2 External noise protected internally against external noise. However, possibility malfunction cannot totally eliminated, depending type intensity noise. Take sufficient counter measures against noise, which adversely affect IPM. noise from outside equipment Apply noise filter line, isolated ground. addition capacitors 1000pF less between signal input phases signal noise inside equipment Before rectifier: Apply same counter measures above After rectifier: Apply snubber circuits line case multiple converters connected rectifier converter)
Control Power Source
6.2.1 voltage range undervoltage protection function available Vcc. following shows range voltage used. less (applying reverse voltage) control circuit damaged. Never apply reverse voltage. control circuit damaged, does operate. Since off-bias IGBT gate sufficient this range, error IGBT could caused dv/dt main power source applied.
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Apply main power source after voltage reaches 13.5V higher. 13.5V, 13.5V control circuit operates. However, power loss increases lack drive voltage. Because protection characteristics changed, circuit damaged insufficient protection. Take care avoid operation this range. 13.5V 16.5V Voltage range required operate normally. recommend using voltage around 15V. 16.5V 20.0V control circuit operate. However, because protection characteristics changed excessive drive source voltage IGBT FWD, circuit damaged depending load. Over 20.0V Take care avoid operation this range. Never apply more; control circuit could damaged. 6.2.2 Voltage ripple 13.5V 16.5V shown 6.2.1 includes voltage ripple. protection operate expected excess lack drive voltage even fluctuates such short period time. When designing control power source, make sure verify that voltage ripple suppressed sufficiently low. Also take care that noise power source suppressed low. 6.2.3 Power source sequence shown 6.2.1, apply main power source after reaches range 13.5V 16.5V. worst case, main power source applied before control source voltage reaches specified value, damaged because protection ready operate. 6.2.4 Alarm during power source alarm output voltage below during power source Alarm reset voltage rises above However, signal being entered, alarm canceled, necessary take appropriate action shutting down control circuit. Likewise, alarm output during power source OFF, need take above-mentioned appropriate action.
Protection Operation
6.3.1 Common protection operation Range protection protection contained designed non-repetitive abnormal phenomena. apply stress steadily that exceeds maximum rating. Countermeasures alarm output alarm output, stop input signal into immediately stop equipment. protective function reset automatically, protection operation alone cannot protect equipment. Restart device after removing causes errors.
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6.3.2 Examples operation load errors precautions Overload output current increases load motor abnormalities, operates. soft IGBT cutoff occurs after tDOC passes. alarm output case lower operation. Load short circuit motor output terminal shorted, peak suppressed instantly prevent flow excessive current. condition short circuit cleared period tDOC, soft IGBT cutoff occurs, alarm output, case lower arm. Starting with load short circuit delay time about 10µs. input signal pulse width shorter than this, does operate. Therefore, input signal pulses 10µs less continuing when starting with load shorted, short circuits occur continuously chip temperature IGBT rises rapidly. such case, TcOH appropriate because rise case temperature delayed. When chip temperature exceeds Tjmax, TjOH operates protect chip from overheating. However, because TjOH also delayed about 1ms, temperature rises rapidly activation protection function late prevent chip from being damaged. setting pulse width initial input signal during startup 10µs more, overcurrent short circuits reliably detected errors detected alarm output protection operation. short circuit signal entered simultaneously upper lower arms, IGBT upper lower arms turned simultaneously, resulting short circuit. this occurs, peak immediately suppressed. After tDOC passes, soft IGBT cutoff occurs alarm output. Ground short ground short caused insulation abnormalities motor overcurrent flows lower arm, soft IGBT cutoff occurs alarm output. overcurrent flows upper arm, soft IGBT cutoff occurs alarm output. state selfcutoff maintained about 2ms. input signal stopped, protected state released after 2ms. Since input phase generally inverted after 10ms, short circuit currents flow lower arm, this time alarm output. 6.3.3 Alarm upper side alarm output from upper side. IGBT including brake have latch period 2ms. alarm output designed system lower side designed upper side. result, alarm output protection function operates only upper side. However, upper-phase current lacks during latch period 2ms, when phase moves lower phase, overcurrent flows lower then alarm output operation. 6.3.4 Overcurrent detect collector current their operation, detect anode current FWD. Therefore, protection function activated when abnormal currents flow only FWD.
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6.3.5 Temperature detection location case temperature protection (TcOH) temperature detection device case temperature protection located ceramic substrate which power chips mounted. location temperature detection device substrate near lower phase IGBT edge substrate. TcOH designed protect when temperature whole substrate rises. When overheating concentrated main device, chip temperature protection TjOH 6.3.6 employed. 6.3.6 Chip temperature protection (TjOH) current flows concentrated IGBTs, such motor lock mode, chip temperature rises rapidly case temperature protection function appropriate. this case, chip protected from thermal damage temperature detection elements installed IGBT chip. chip temperature protection function installed IGBT including brake.
Reliability
6.4.1 Power cycling capability Lifetime semiconductor product permanent. Accumulated fatigue thermal stress resulting from rising falling temperatures generated within device shorten lifetime components. Narrow width temperature variations much possible. 6.4.2 Reliability test items Item Thermal shock Temperature cycle Shock Vibration Terminal tensile strength Tightening strength Intermittent operation High temperature reverse bias High temperature storage temperature storage Humid storage Pressure cooker Referenced standard C7021 C7021 C7021 C7021 A-10 C7021 A-11 EIAJ ED-4701 A112 C7021 C7021 C7021 B-10 C7021 B-12 C7021 B-11 EIAJ ED-4701 B-123 Method/Condition 0/100oC, 5min each, cycles -40/RT/125oC, 60/30/60min, cycles 1000G, 0.5ms, each times 10G, 500Hz, 15min, each direction perpendicular control terminal Method (Screw torque test), 3.5Nm Rated 2s/18s (ON/OFF), 3000 cycles 125oC, VDCX0.8, 1000h 125oC, 1000h 1000h 85oC, 85%, 1000h 2atm, 121oC, 100%,
Others
6.5.1 Precautions storage/transportation Store room temperature humidity level 75%. Avoid rapid temperature humidity changes. particular, allow condensation surface. Avoid locations where corrosive gases generated dust present. Take care that load placed IPM. Particularly, control terminal should bent. Store with unprocessed terminals, with load them. drop subject shock during transportation.
REH983
6.5.2 Precautions usage installation into equipment drop subject shock during installation into devices, transportation, driving. Take care that load placed IPM. Particularly, control terminal should bent. perform soldering re-flow main terminal control terminal. Take care prevent influence heat, flux, washing solutions used soldering other components. Avoid rapid temperature humidity changes. particular, allow condensation surface. Avoid locations where corrosive gases generated dust present. IGBT contained easily destroyed static electricity. Take care prevent high voltage static electricity main terminal control terminal. Connect adequate fuse protector circuit between three-phase line this product prevent equipment from causing secondary destruction. When using your equipment, requested take adequate safety counter measures prevent equipment from causing physical injury, fire, other problem becomes faulty. recommended make your design fail-safe, flame retardant, free malfunction. applications described this manual exemplify reference only. right license, either express implied, under patent, copyright, trade secret other intellectual property right owned Fuji Electric Co., Ltd. granted. need equipment requiring higher reliability than normal, such equipment listed below, imperative contact Fuji Electric obtain prior approval. Transportation equipment (mounted cars ships) Space equipment Medical equipment Nuclear control equipment Submarine repeater equipment have question about portion this manual, Fuji Electric before using IPM.
REH983

REH983

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