Q62702-F1576
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Silicon Transistor noise, distortion broadband amplifiers antenna telecommunications systems 1.5GHz collector currents from 20mA 80mA Power amplifier DECT systems 7.5GHz
900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Configuration 196W Q62702-F1576
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values Unit
VCEO VCES VCBO VEBO Ptot Tstg
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction soldering point
RthJS
measured collector lead soldering point pcb.
Semiconductor Group
Dec-12-1996
196W
Electrical Characteristics 25°C, unless otherwise specified. Parameter Symbol min. Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
Collector-emitter cutoff current
ICES ICBO IEBO
Collector-base cutoff current
Emitter-base cutoff current
current gain
Semiconductor Group
Dec-12-1996
196W
Electrical Characteristics 25°C, unless otherwise specified. Parameter Symbol min. Characteristics Transition frequency Values typ. max. Unit
0.36
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
ZSopt
Power gain
ZSopt ZLopt
Transducer gain |S21e|2 12.5 17.5 11.5
=ZL=
|S21/S12| (k-(k2-1)1/2)
Semiconductor Group
Dec-12-1996
196W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) Transistor Chip Data 1.7264 1.1766 3.8128 0.88299 13.325 23.994 1.9775 0.73057 2.2413
0.4294 10.584 1.2907 0.75103 0.7308 0.44322 0.3289 0.50922
XCJC TNOM
0.80012 119.22 0.94288 4.8666 0.27137 0.33018 1667 0.29998 0.75 1.11
0.019511
0.084011
parameters ready use, scalling necessary. Extracted behalf SIEMENS Small Signal Semiconductors Institut Mobil-und Satellitenfunktechnik (IMST) 1996 SIEMENS
Package Equivalent Circuit: 0.43 0.47 0.26 0.12 0.06 0.36
Valid examples ready parameters please contact your local Siemens distributor sales office obtain Siemens CD-ROM Internet:
Semiconductor Group
Dec-12-1996
196W
Total power dissipation Ptot (TA*,
Package mounted epoxy
Ptot
Permissible Pulse Load RthJS (tp)
Permissible Pulse Load Ptotmax/PtotDC (tp)
RthJS
Ptotmax/PtotDC 0.005 0.01 0.02 0.05
0.05 0.02 0.01 0.005
Semiconductor Group
Dec-12-1996
196W
Collector-base capacitance (VCB) 1MHz
Transition frequency (IC)
Parameter
0.7V
Power Gain Gma, f(IC)
0.9GHz Parameter
Power Gain Gma, f(IC)
1.8GHz Parameter
0.7V
0.7V
Semiconductor Group
Dec-12-1996
196W
Power Gain Gma, f(VCE):_
|S21 f(VCE):-
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
Parameter
Parameter, 900MHz
0.9GHz
IC=50mA
1.8GHz 0.9GHz 1.8GHz
Power Gain Gma, f(f)
Parameter
Power Gain |S21|2= f(f)
Parameter
IC=50mA
IC=50mA
0.7V
0.7V
Semiconductor Group
Dec-12-1996
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