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PUB4220 PUB4520 PUB4120 PUB4420
Top Searches for this datasheetPUB4220 - PUB4220 PUB4520 - PUB4520 PUB4120 - PUB4120 PUB4420 - PUB4420 PUB4220 (PU4220), PUB4520 (PU4520) Silicon epitaxial planar type darlington power amplification Complementary PUB4120 (PU4120), PUB4420 (PU4420) Features 25.3±0.2 Unit: 1.65±0.2 Solder 5.3±0.5 4.4±0.5 4.0±0.2 Absolute Maximum Ratings 25°C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 25°C Junction temperature Storage temperature VEBO Tstg Electrical Characteristics 25°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) tstg Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank Free Internal Connection PUB4220 Publication date: March 2004 disc 9.5±0.2 8.0±0.2 High forward current transfer ratio High-speed switching PUB4220 (PU4220): elements PUB4520 (PU4520): elements (total elements) 0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 0.5±0.15 Rating Unit 1.5±0.5 +150 Emitter Base Collector Base Collector Base Collector Base Collector Emitter SIP10-A1 Package 2.54 22.86±0.25 Conditions -2.5 -200 -500 Unit -2.0 PUB4520 Note) part numbers parenthesis show conventional part number. SJK00072AED PUB4220, PUB4520 25°C -3.0 -2.5 -2.0 -1.5 -1.0 Collector power dissipation With heat sink Without heat sink Collector current Collector current 100°C 25°C -25°C -1.6 -2.4 -3.2 Ambient temperature (°C) Collector-emitter voltage Base-emitter voltage VCE(sat) Collector-emitter saturation voltage VCE(sat) -100 Collector output capacitance (pF) (Common base, input open circuited) 25°C 100°C 25°C -25°C Forward current transfer ratio 100°C 25°C -25°C 0.01 0.01 0.01 -100 Collector current Collector current Collector-base voltage Safe operation area -100 repetitve pulse 25°C (per circuit) Collector current 0.01 -100 Collector-emitter voltage SJK00072AED Request your special attention precautions using technical information semiconductors described this book products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd. 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