PUA3273 PUA3173
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PUA3273 - PUA3273
PUA3173 - PUA3173
PUA3273 (PU3273)
Silicon triple diffusion planar type darlington
power amplification Complementary PUA3173 (PU3173) Features
Uni:
20.2±0.3 4.0±0.2
Solder 5.3±0.5 4.4±0.5
High forward current transfer ratio High-speed switching elements
Absolute Maximum Ratings 25°C
Parameter Symbol VCBO VCEO VEBO Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
Peak collector current
Collector power dissipation
25°C
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Symbol VCEO ICBO ICEO IEBO hFE2 Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank Free
Publication date: March 2004
disc
0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 0.5±0.15
9.5±0.2 1.65±0.2 8.0±0.2
Rating -150 -100
Unit
2.57 17.78±0.25
1.5±0.5
Emitter Base Collector Base Collector Base Collector Emitter SIP8-A1 Package
Tstg
+150
Conditions
Unit
-100
-150
-100 -100
hFE1
-2.5 -2.5
VCE(sat) VBE(sat)
0.32
tstg
1.70
1.05
Note) part number parenthesis shows conventional part number.
SJK00030AED
PUA3273
Internal Connection
Safe operation area
-100 repetitve pulse 25°C (per circuit)
Collector power dissipation
Collector current
With heat sink With heat sink Without heat sink
0.01
-100
Ambient temperature (°C)
Collector-emitter voltage
SJK00030AED
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