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PTFB192503EL PTFB192503FL
Top Searches for this datasheetTRANSISTOR tl131 - TRANSISTOR tl131 transistor c803 - transistor c803 TRANSISTOR c105 - TRANSISTOR c105 tl248 - tl248 tl241* - tl241* tl131* - tl131* TL113 - TL113 PTFB192503FL - PTFB192503FL PTFB192503EL - PTFB192503EL EFL 103 - EFL 103 c803 - c803 c104 TRANSISTOR - c104 TRANSISTOR c102 TRANSISTOR - c102 TRANSISTOR 100B8R2BW* - 100B8R2BW* PTFB192503EL - PTFB192503EL PTFB192503FL - PTFB192503FL PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power LDMOS FETs 1930 1990 PTFB192503EL PTFB192503FL 240-watt LDMOS FETs intended multi-standard cellular power amplifier applications 1930 1990 frequency band. Features include input output matching, high gain, wide signal bandwidth reduced memory effects improved correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance superior reliability. PTFB192503EL H-33288-6, eared PTFB192503FL H-34288-6, earless Two-carrier WCDMA 3GPP 1.85 1990 3GPP WCDMA, 8:1, carrier spacing 3.84MHz Features Broadband internal input output matching Enhanced error correction systems Typical two-carrier WCDMA performance, 1990 Average output power Linear gain Drain efficiency Intermodulation distortion Typical performance, 1990 MHz, Output power P-1dB Efficiency Increased negative gate-source voltage range improved performance Doherty peaking amplifiers Integrated protection. Human Body Model, Class (minimum) Capable handling VSWR (CW) output power Pb-free, RoHS-compliant Drain Efficiency Gain Gain (dB) Efficiency Output Power (dBm) Characteristics Two-carrier WCDMA Specifications (not subject production test-verified design/characterization Infineon test fixture) POUT average 1980 MHz, 1990 MHz, 3GPP signal, channel bandwidth 3.84 peak/average 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion published data TCASE 25°C unless otherwise indicated Symbol Unit *See Infineon distributor future availability. ESD: Electrostatic discharge sensitive device-observe handling precautions! Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Characteristics (cont.) Two-tone Specifications (tested Infineon test fixture) POUT PEP, 1990 MHz, tone spacing Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol 41.5 Unit Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions Symbol V(BR)DSS IDSS IDSS RDS(on) IGSS 0.03 10.0 Unit Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE 70°C, Symbol VDSS TSTG Value +150 0.262 Unit °C/W Ordering Information Type Version PTFB192503EL Package Type H-33288-6 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tape Reel, Tray Tape Reel, PTFB192503EL R250 H-33288-6 PTFB192503FL H-34288-6 PTFB192503FL R250 H-34288-6 *See Infineon distributor future availability. Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Typical Performance (data taken production test fixture) Two-carrier WCDMA 3GPP Drive-up 1.85 3GPP WCDMA, 8:1, carrier spacing 3.84 1990 1990 Upper 1960 1960 Upper 1930 1930 Upper Two-carrier WCDMA 3GPP Drive-up 1.85 1990 3GPP WCDMA, 8:1, carrier spacing, 3.84 Efficiency ACPR Output Power (dBm) Output Power (dBm) Power Sweep, Gain Efficiency Output Power 1.85 1990 Two-tone Broadband Gain, Efficiency Return Loss Frequency 1.85 POUT Efficiency Gain (dB) Efficiency Drain Efficiency 1890 1920 1950 Efficiency IMD3 Gain 2010 1980 Output Power (dBm) Frequency (MHz) Data Sheet Rev. 2009-11-11 Return Loss (dB), (dBc) Gain Gain (dB) Drain Efficiency ACPR (dBc) (dBc) PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up 1.85 1990 MHz, 1989 Two-tone Drive-up 1.85 1990 MHz, 1989 Gain (dBc) Efficiency Efficiency Gain (dB) Efficiency Output Power, (dBm) Output Power, (dBm) Two-tone Drive-up Selected Frequencies 1.85 Tone Spacing Two-tone Voltage Sweep 1.85 1990 MHz, 1989 Output Power 53.3 1930 Gain (dB) Efficiency 1990 Efficiency (dBc) IMD3 IMD3 Gain Output Power, (dBm) Supply Voltage Data Sheet Rev. 2009-11-11 Order (dBc) 1960 Efficiency PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Typical Performance (cont.) Gain Efficiency Output Power 1.85 1990 Performance Gain Output Power 1990 Drain Efficiency Gain Power Gain (dB) Gain (dB) 1.85 Efficiency +85°C +25°C -10°C Output Power (dBm) Output Power (dBm) Intermodulation Distortion Output Power 1.85 Gate-Source Voltage Case Temperature Voltage normalized typical gate voltage. Series show current. 1.03 1990 MHz, 1989 Normalized Bias Voltage 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 (dBc) IMD3 0.20 0.77 1.33 1.90 2.47 3.03 IMD5 IMD7 Output Power, (dBm) Case Temperature (°C) Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Broadband Circuit Impedance Source Load 2020 Frequency 1900 1930 1960 1990 2020 Source -3.92 -3.67 -3.44 -3.21 -2.98 2.63 2.56 2.48 2.42 2.35 Load 1.36 1.33 1.31 1.28 1.26 -4.49 -4.35 -4.21 -4.07 -3.93 Load Source 1900 next page circuit information Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Reference Circuit C803 10000000 R801 "Pot" R802 TL110 TL112 TL121 C802 10000000 C801 10000000 R805 1200 R803 R804 1300 R101 TL118 TL108 TL122 TL106 TL127 TL113 C105 2200000 TL128 TL115 C107 TL114 C103 10000000 TL135 TL101 TL109 TL124 C101 TL111 C104 10000000 TL136 TL103 TL126 TL129 TL102 TL104 TL119 RF_IN GATE C106 2200000 Er=3.48 H=30 RO/RO4350B1 TL134 C102 TL116 TL120 R102 TL117 TL107 TL125 TL133 TL132 TL131 TL130 TL123 TL105 3fl- Reference circuit input schematic 1990 C208 10000000pF C211 100000pF TL228 C205 2200000pF C203 1000000pF TL236 TL235 TL218 TL216 TL217 TL232 L201 TL210 TL207 TL211 TL206 C212 C206 1000000pF TL223 TL222 TL243 TL224 C202 TL248 DRAIN TL229 TL203 TL219 TL245 TL247 TL246 TL230 TL241 TL242 TL238 TL237 TL226 TL239 TL220 TL204 TL201 TL240 TL225 TL221 TL202 RF_OUT TL244 C201 TL205 C207 1000000pF TL209 TL233 TL234 TL227 TL212 TL208 TL231 L202 TL213 TL215 u_0- 2009 TL214 C209 10000000pF C210 100000 C213 2200000pF C204 1000000pF Reference circuit output schematic 1990 Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) RO4350, .030 (60) RO4350, .030 (60) C803 R801 C802 R802 R803 C105 C103 RF_IN R804 C801 C211 C205 C208 R805 C212 L201 C203 C206 C107 R101 C202 C207 RF_OUT C101 C104 C201 C106 R102 C102 L202 C209 C204 C213 C210 PTFB192503in_01 PTFB192503out_01 Reference circuit assembly diagram* (not scale) Gerber Files this circuit available request Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information PTFB192503EL PTFB192503FL LTN/PTFB192503EF [.030"] thick, 3.48 LDMOS Transistor Rogers RO4350 copper Component Input C101 C102 C103, C104 C105, C106 C107 C801, C802, C803 R101, R102 R801 R802, R803 R804 R805 Chip capacitor, Chip capacitor, Capacitor, 10000000 Chip capacitor, 2200000 Chip capacitor, Capacitor, 10000000 Resistor, Resistor, Resistor, Resistor, 1300 Resistor, 1200 Transistor Voltage Regulator Potentiometer, Suggested Manufacturer Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Infineon Technologies National Semiconductor Digi-Key 100B100FW500XB 100B8R2BW500XB 399-1655-2-ND 445-1474-2-ND 100B8R2BW500XB PCC1772CT-ND P100ECT-ND P101ECT-ND P100ECT-ND P1.3KGECT-ND P1.2KGECT-ND BCP56 LM7805 3224W-202ECT-ND Output C201 C202 C203, C204 C205 C206, C207 C208, C209 C210, C211 C212 C213 L201, L202 Chip capacitor, Chip capacitor, Chip capacitor, 1000000 Chip capacitor, 2200000 Chip capacitor, 1000000 Chip capacitor, 10000000 Chip capacitor, 100000 Chip capacitor, Chip capacitor, 2200000 Inductor, Digi-Key Digi-Key DIgi-Key Digi-Key Digi-Key Elna Magnetics 100A1R0BW150XB 100B100FW500XB 445-1411-2-ND 445-1474-2-ND TPSE106K050R0400 900C105KW100XB PCC104BCT-ND 100A1R0BW150XB 445-1474-2-ND 4.6/3/8.9-4S2 Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Transmission Line Input TL101 TL102 TL103 TL104 TL105, TL106 TL107, TL108 TL109 TL110 TL111 TL112 TL113 TL114 TL115, TL116 TL117, TL118 TL119 TL120, TL121 TL122, TL123 TL124 TL125 TL126 (taper) TL127 TL128 TL129 TL130 TL131 TL132 TL133 TL134 TL135, TL136 0.015 38.82 0.071 92.53 0.016 68.02 0.024 78.27 0.023 78.27 0.001 68.02 0.014 78.27 0.048 9.67 0.007 68.02 0.125 78.27 0.008 45.17 0.023 78.27 0.030 9.67 51.58 0.011 78.27 0.022 78.27 0.077 9.67 0.015 38.82 0.016 68.02 0.011 78.27 0.024 78.27 0.022 78.27 0.016 92.53 0.011 78.27 0.037 51.58 0.053 9.67 0.033 51.58 0.009 9.67 1.651, 3.358 13.97, 4.470 1.651, 3.018 13.97, 0.762, 13.97 0.762 0.762 0.762, 0.762, 1.016 1.651, 2.032 2.54, 1.321 0.508, 6.756 1.016, 1.524 0.762, 2.286 0.762, 2.159 1.016, 0.127 0.762, 1.27 13.97, 4.064 1.016, 0.686 0.762, 11.684 2.032, 0.762 0.762, 2.159 13.97, 1.651, 2.515 0.762, 1.016, 1.016 0.762, 0.762, 2.032 13.97, 6.502 2.54, 1.321 1.016, 1.524 0.762, 1.016, 1.016 0.762, 2.286 0.762, 0.762 2.032 0.508, 0.508, 1.524 550, 550, 550, 100, 550, 550, =40, 550, 100, Electrical Characteristics 1990 Dimensions: Dimensions: mils *Gerber files this circuit available request Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Transmission Line Output TL201 TL202 TL203 TL204 TL205 TL206 TL207 TL208 TL209 TL210, TL213 TL211 TL212 TL214 TL215 TL216 TL217, TL218 TL219 TL220 TL221, TL222, TL223, TL225 TL224 TL226 (taper) TL227, TL228 TL229 TL230 (taper) TL231, TL232 TL233, TL235 TL234 TL236 TL237 TL238 (taper) TL239 TL240 TL241, TL243, TL245 TL246 TL247 TL248 0.018 6.86 8.31 0.014 34.08 0.003 34.08 0.020 34.08 0.014 34.08 0.000 19.45 0.041 8.31 19.45 0.003 51.58 0.006 45.17 0.000 8.31 0.000 146.88 0.000 6.86 0.000 6.86 0.009 6.86 0.014 51.58 0.012 51.58 0.049 6.86 0.006 45.17 0.029 23.60 0.029 23.79 0.034 34.08 0.020 34.08 0.014 34.08 0.020 34.08 0.054 34.08 0.003 34.08 0.054 34.08 0.034 34.08 0.003 34.08 0.020 34.08 0.031 6.86 0.003 51.58 0.014 51.58 0.019 19.45 51.58 0.034 34.08 2.032, 2.032 1.651, 1.1176 20.32, 4.064 2.032, 0.508 4.928, 2.54 4.877, 2.54 3.048, 3.048, 3.048 3.048, 3.048, =1.778 3.048 3.048, 1.27 3.048, 1.778 3.048, 4.826 3.048, 0.254 3.048, 4.826 3.048, 3.048, 3.048 3.048, 0.254 3.048, 3.048, 1.778 20.32, 2.54 1.651, 0.254 0.002 1.651, 1.27 6.248, 1.651, 1.651 3.048, 3.048, 3.048 12.7, 17.78 20.32, 16.51, 1.524 3.048, 1.27 3.048, 0.254 3.048, 3.048, 1.778 3.048, 3.048, 1.27 6.248, 0.0254 16.51, 6.248, 3.429 1.651, 0.25 2.032, 0.508 16.51, 0.025 0.025, 0.025 20.32, 0.025, 20.32 0.0254 20.32, 0.025 20.32, 0.787 1.651, 1.27 800, 194, 192, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 800, 246, 120, 120, 500, 800, 650, 120, 120, 120, 120, 120, 120, 246, 650, 246, 650, 800, 800, 800, 800, Electrical Characteristics 1990 Dimensions: Dimensions: mils Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 2.032 [45° .080] R1.524 [R.060] [.200] PLS) 1.143 [.045] PLS) 9.398 [.370] 4.889±.510 [.192±.020] 9.779 [.385] 19.558±.510 [.770±.020] R1.626 [R.064] 12.700 [.500] 22.860 [.900] C66065-A0003-C725-01-0027 H-33288-6.dwg 27.940 [1.100] 4.039+.254 -.127 .159+.010 -.005 22.352±.200 [.880±.008] 0.0381 [.0015] -A1.575 [.062] (SPH) 1.016 [.040] 34.036 [1.340] Diagram Notes-unless otherwise specified: Interpret dimensions tolerances ASME Y14.5M-1994. Primary dimensions Alternate dimensions inches. tolerances 0.127 [.005] unless specified otherwise. Pins: gate; source; drain; drain voltage; N.C. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 0.25 micron microinch] max. Data Sheet Rev. 2009-11-11 PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-6 2.032 [45° .080] 5.080 [.200] PLS) 1.143 [.045] PLS) 4.889±.510 [.192±.020] 9.398 [.370] 9.779 [.385] 19.558±.510 [.770±.020] 12.700 [.500] 22.860 [.900] C66065-A0003-C726-01-0027 H-34288-6.dwg 22.352±.200 [.880±.008] 4.039+.254 -.127 .159+.010 -.005 0.0381 [.0015] -A1.575 [.062] (SPH) 1.016 [.040] 23.114 [.910] Diagram Notes-unless otherwise specified: Interpret dimensions tolerances ASME Y14.5M-1994. Primary dimensions Alternate dimensions inches. tolerances 0.127 [.005] unless specified otherwise. Pins: gate; source; drain; drain voltage; N.C. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 0.25 micron microinch] max. Find latest most complete information about products packaging Infineon Internet page http://www.infineon.com/rfpower Data Sheet Rev. 2009-11-11 PTFB192503EL/FL Confidential, Limited Internal Distribution Revision History: 2009-11-11 2009-09-14, Data Sheet Previous Version: Page Subjects (major changes since last revision) update specifications Data Sheet Listen Your Comments information within this document that feel wrong, unclear missing all? Your feedback will help continuously improve quality this document. Please send your proposal (including reference this document) highpowerRF@infineon.com request other information, contact 3667 (1-877-GO-LDMOS) 0600 International Edition 2009-11-11 Published Infineon Technologies 81726 Munich, Germany 2009 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered. 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