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PTFB192503EL PTFB192503FL


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PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power LDMOS FETs 1930 1990
PTFB192503EL PTFB192503FL 240-watt LDMOS FETs intended multi-standard cellular power amplifier applications 1930 1990 frequency band. Features include input output matching, high gain, wide signal bandwidth reduced memory effects improved correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance superior reliability. PTFB192503EL H-33288-6, eared
PTFB192503FL H-34288-6, earless
Two-carrier WCDMA 3GPP
1.85 1990 3GPP WCDMA, 8:1, carrier spacing 3.84MHz
Features
Broadband internal input output matching Enhanced error correction systems Typical two-carrier WCDMA performance, 1990 Average output power Linear gain Drain efficiency Intermodulation distortion Typical performance, 1990 MHz, Output power P-1dB Efficiency Increased negative gate-source voltage range improved performance Doherty peaking amplifiers Integrated protection. Human Body Model, Class (minimum) Capable handling VSWR (CW) output power Pb-free, RoHS-compliant
Drain Efficiency
Gain
Gain (dB)
Efficiency
Output Power (dBm)
Characteristics
Two-carrier WCDMA Specifications (not subject production test-verified design/characterization Infineon test
fixture) POUT average
1980 MHz, 1990 MHz, 3GPP signal, channel bandwidth 3.84 peak/average 0.01% CCDF
Characteristic
Gain Drain Efficiency Intermodulation Distortion published data TCASE 25°C unless otherwise indicated
Symbol
Unit
*See Infineon distributor future availability.
ESD: Electrostatic discharge sensitive device-observe handling precautions! Data Sheet Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Characteristics (cont.)
Two-tone Specifications (tested Infineon test fixture) POUT PEP, 1990 MHz, tone spacing Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
41.5
Unit
Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
Symbol
V(BR)DSS IDSS IDSS RDS(on) IGSS
0.03
10.0
Unit
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE 70°C,
Symbol
VDSS TSTG
Value
+150 0.262
Unit
°C/W
Ordering Information
Type Version PTFB192503EL Package Type H-33288-6 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tape Reel, Tray Tape Reel,
PTFB192503EL R250 H-33288-6 PTFB192503FL H-34288-6
PTFB192503FL R250 H-34288-6
*See Infineon distributor future availability. Data Sheet Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (data taken production test fixture)
Two-carrier WCDMA 3GPP Drive-up
1.85 3GPP WCDMA, 8:1, carrier spacing 3.84
1990 1990 Upper 1960 1960 Upper 1930 1930 Upper
Two-carrier WCDMA 3GPP Drive-up
1.85 1990 3GPP WCDMA, 8:1, carrier spacing, 3.84
Efficiency
ACPR
Output Power (dBm)
Output Power (dBm)
Power Sweep, Gain Efficiency Output Power
1.85 1990
Two-tone Broadband Gain, Efficiency Return Loss Frequency
1.85 POUT Efficiency
Gain (dB) Efficiency
Drain Efficiency
1890 1920 1950
Efficiency
IMD3 Gain
2010
1980
Output Power (dBm)
Frequency (MHz)
Data Sheet
Rev. 2009-11-11
Return Loss (dB), (dBc)
Gain
Gain (dB)
Drain Efficiency
ACPR (dBc)
(dBc)
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
1.85 1990 MHz, 1989
Two-tone Drive-up
1.85 1990 MHz, 1989
Gain
(dBc)
Efficiency
Efficiency
Gain (dB)
Efficiency
Output Power, (dBm)
Output Power, (dBm)
Two-tone Drive-up Selected Frequencies
1.85 Tone Spacing
Two-tone Voltage Sweep
1.85 1990 MHz, 1989 Output Power 53.3
1930
Gain (dB) Efficiency
1990
Efficiency
(dBc)
IMD3
IMD3 Gain
Output Power, (dBm)
Supply Voltage
Data Sheet
Rev. 2009-11-11
Order (dBc)
1960
Efficiency
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gain Efficiency Output Power
1.85 1990
Performance Gain Output Power
1990
Drain Efficiency
Gain
Power Gain (dB)
Gain (dB)
1.85
Efficiency
+85°C +25°C -10°C
Output Power (dBm)
Output Power (dBm)
Intermodulation Distortion Output Power
1.85
Gate-Source Voltage Case Temperature
Voltage normalized typical gate voltage. Series show current.
1.03
1990 MHz, 1989
Normalized Bias Voltage
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95
(dBc)
IMD3
0.20 0.77 1.33 1.90 2.47 3.03
IMD5 IMD7
Output Power, (dBm)
Case Temperature (°C)
Data Sheet
Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Source
Load
2020
Frequency
1900 1930 1960 1990 2020
Source
-3.92 -3.67 -3.44 -3.21 -2.98 2.63 2.56 2.48 2.42 2.35
Load
1.36 1.33 1.31 1.28 1.26 -4.49 -4.35 -4.21 -4.07 -3.93
Load
Source
1900
next page circuit information
Data Sheet
Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit
C803 10000000 R801 "Pot" R802 TL110 TL112 TL121
C802 10000000 C801 10000000
R805 1200
R803
R804 1300
R101
TL118
TL108
TL122
TL106
TL127
TL113 C105 2200000 TL128
TL115 C107
TL114
C103 10000000 TL135 TL101 TL109 TL124 C101 TL111 C104 10000000 TL136
TL103
TL126
TL129
TL102
TL104
TL119
RF_IN
GATE
C106 2200000
Er=3.48 H=30 RO/RO4350B1
TL134
C102 TL116 TL120 R102 TL117 TL107
TL125
TL133
TL132 TL131 TL130
TL123
TL105
3fl-
Reference circuit input schematic 1990
C208 10000000pF C211 100000pF TL228
C205 2200000pF
C203 1000000pF
TL236
TL235
TL218
TL216
TL217
TL232
L201
TL210
TL207
TL211
TL206 C212
C206 1000000pF
TL223
TL222
TL243
TL224 C202
TL248
DRAIN
TL229
TL203
TL219
TL245
TL247 TL246
TL230
TL241
TL242
TL238
TL237
TL226
TL239
TL220
TL204
TL201 TL240
TL225
TL221
TL202
RF_OUT
TL244
C201
TL205
C207 1000000pF TL209
TL233
TL234
TL227
TL212
TL208
TL231
L202
TL213
TL215
u_0- 2009
TL214
C209 10000000pF
C210 100000
C213 2200000pF
C204 1000000pF
Reference circuit output schematic 1990 Data Sheet Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RO4350, .030 (60) RO4350, .030 (60)
C803 R801 C802 R802 R803 C105 C103
RF_IN
R804 C801 C211 C205 C208 R805 C212 L201
C203
C206
C107 R101 C202 C207
RF_OUT
C101 C104 C201 C106 R102 C102 L202
C209
C204
C213 C210
PTFB192503in_01
PTFB192503out_01
Reference circuit assembly diagram* (not scale)
Gerber Files this circuit available request Data Sheet Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
PTFB192503EL PTFB192503FL LTN/PTFB192503EF [.030"] thick, 3.48 LDMOS Transistor Rogers RO4350 copper
Component
Input
C101 C102 C103, C104 C105, C106 C107 C801, C802, C803 R101, R102 R801 R802, R803 R804 R805
Chip capacitor, Chip capacitor, Capacitor, 10000000 Chip capacitor, 2200000 Chip capacitor, Capacitor, 10000000 Resistor, Resistor, Resistor, Resistor, 1300 Resistor, 1200 Transistor Voltage Regulator Potentiometer,
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Infineon Technologies National Semiconductor Digi-Key
100B100FW500XB 100B8R2BW500XB 399-1655-2-ND 445-1474-2-ND 100B8R2BW500XB PCC1772CT-ND P100ECT-ND P101ECT-ND P100ECT-ND P1.3KGECT-ND P1.2KGECT-ND BCP56 LM7805 3224W-202ECT-ND
Output
C201 C202 C203, C204 C205 C206, C207 C208, C209 C210, C211 C212 C213 L201, L202 Chip capacitor, Chip capacitor, Chip capacitor, 1000000 Chip capacitor, 2200000 Chip capacitor, 1000000 Chip capacitor, 10000000 Chip capacitor, 100000 Chip capacitor, Chip capacitor, 2200000 Inductor, Digi-Key Digi-Key DIgi-Key Digi-Key Digi-Key Elna Magnetics 100A1R0BW150XB 100B100FW500XB 445-1411-2-ND 445-1474-2-ND TPSE106K050R0400 900C105KW100XB PCC104BCT-ND 100A1R0BW150XB 445-1474-2-ND 4.6/3/8.9-4S2
Data Sheet
Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Transmission Line
Input
TL101 TL102 TL103 TL104 TL105, TL106 TL107, TL108 TL109 TL110 TL111 TL112 TL113 TL114 TL115, TL116 TL117, TL118 TL119 TL120, TL121 TL122, TL123 TL124 TL125 TL126 (taper) TL127 TL128 TL129 TL130 TL131 TL132 TL133 TL134 TL135, TL136 0.015 38.82 0.071 92.53 0.016 68.02 0.024 78.27 0.023 78.27 0.001 68.02 0.014 78.27 0.048 9.67 0.007 68.02 0.125 78.27 0.008 45.17 0.023 78.27 0.030 9.67 51.58 0.011 78.27 0.022 78.27 0.077 9.67 0.015 38.82 0.016 68.02 0.011 78.27 0.024 78.27 0.022 78.27 0.016 92.53 0.011 78.27 0.037 51.58 0.053 9.67 0.033 51.58 0.009 9.67 1.651, 3.358 13.97, 4.470 1.651, 3.018 13.97, 0.762, 13.97 0.762 0.762 0.762, 0.762, 1.016 1.651, 2.032 2.54, 1.321 0.508, 6.756 1.016, 1.524 0.762, 2.286 0.762, 2.159 1.016, 0.127 0.762, 1.27 13.97, 4.064 1.016, 0.686 0.762, 11.684 2.032, 0.762 0.762, 2.159 13.97, 1.651, 2.515 0.762, 1.016, 1.016 0.762, 0.762, 2.032 13.97, 6.502 2.54, 1.321 1.016, 1.524 0.762, 1.016, 1.016 0.762, 2.286 0.762, 0.762 2.032 0.508, 0.508, 1.524 550, 550, 550, 100, 550, 550, =40, 550, 100,
Electrical Characteristics 1990
Dimensions:
Dimensions: mils
*Gerber files this circuit available request Data Sheet Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Transmission Line
Output
TL201 TL202 TL203 TL204 TL205 TL206 TL207 TL208 TL209 TL210, TL213 TL211 TL212 TL214 TL215 TL216 TL217, TL218 TL219 TL220 TL221, TL222, TL223, TL225 TL224 TL226 (taper) TL227, TL228 TL229 TL230 (taper) TL231, TL232 TL233, TL235 TL234 TL236 TL237 TL238 (taper) TL239 TL240 TL241, TL243, TL245 TL246 TL247 TL248 0.018 6.86 8.31 0.014 34.08 0.003 34.08 0.020 34.08 0.014 34.08 0.000 19.45 0.041 8.31 19.45 0.003 51.58 0.006 45.17 0.000 8.31 0.000 146.88 0.000 6.86 0.000 6.86 0.009 6.86 0.014 51.58 0.012 51.58 0.049 6.86 0.006 45.17 0.029 23.60 0.029 23.79 0.034 34.08 0.020 34.08 0.014 34.08 0.020 34.08 0.054 34.08 0.003 34.08 0.054 34.08 0.034 34.08 0.003 34.08 0.020 34.08 0.031 6.86 0.003 51.58 0.014 51.58 0.019 19.45 51.58 0.034 34.08 2.032, 2.032 1.651, 1.1176 20.32, 4.064 2.032, 0.508 4.928, 2.54 4.877, 2.54 3.048, 3.048, 3.048 3.048, 3.048, =1.778 3.048 3.048, 1.27 3.048, 1.778 3.048, 4.826 3.048, 0.254 3.048, 4.826 3.048, 3.048, 3.048 3.048, 0.254 3.048, 3.048, 1.778 20.32, 2.54 1.651, 0.254 0.002 1.651, 1.27 6.248, 1.651, 1.651 3.048, 3.048, 3.048 12.7, 17.78 20.32, 16.51, 1.524 3.048, 1.27 3.048, 0.254 3.048, 3.048, 1.778 3.048, 3.048, 1.27 6.248, 0.0254 16.51, 6.248, 3.429 1.651, 0.25 2.032, 0.508 16.51, 0.025 0.025, 0.025 20.32, 0.025, 20.32 0.0254 20.32, 0.025 20.32, 0.787 1.651, 1.27 800, 194, 192, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 120, 800, 246, 120, 120, 500, 800, 650, 120, 120, 120, 120, 120, 120, 246, 650, 246, 650, 800, 800, 800, 800,
Electrical Characteristics 1990
Dimensions:
Dimensions: mils
Data Sheet
Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-33288-6
2.032 [45° .080] R1.524 [R.060] [.200] PLS)
1.143 [.045] PLS)
9.398 [.370]
4.889±.510 [.192±.020]
9.779 [.385] 19.558±.510 [.770±.020]
R1.626 [R.064]
12.700 [.500] 22.860 [.900]
C66065-A0003-C725-01-0027 H-33288-6.dwg
27.940 [1.100] 4.039+.254 -.127 .159+.010 -.005
22.352±.200 [.880±.008]
0.0381 [.0015] -A1.575 [.062] (SPH) 1.016 [.040] 34.036 [1.340]
Diagram Notes-unless otherwise specified: Interpret dimensions tolerances ASME Y14.5M-1994. Primary dimensions Alternate dimensions inches. tolerances 0.127 [.005] unless specified otherwise. Pins: gate; source; drain; drain voltage; N.C. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 0.25 micron microinch] max.
Data Sheet
Rev. 2009-11-11
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-34288-6
2.032 [45° .080] 5.080 [.200] PLS) 1.143 [.045] PLS)
4.889±.510 [.192±.020]
9.398 [.370]
9.779 [.385]
19.558±.510 [.770±.020]
12.700 [.500] 22.860 [.900]
C66065-A0003-C726-01-0027 H-34288-6.dwg
22.352±.200 [.880±.008]
4.039+.254 -.127 .159+.010 -.005
0.0381 [.0015] -A1.575 [.062] (SPH) 1.016 [.040] 23.114 [.910]
Diagram Notes-unless otherwise specified: Interpret dimensions tolerances ASME Y14.5M-1994. Primary dimensions Alternate dimensions inches. tolerances 0.127 [.005] unless specified otherwise. Pins: gate; source; drain; drain voltage; N.C. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 0.25 micron microinch] max.
Find latest most complete information about products packaging Infineon Internet page http://www.infineon.com/rfpower Data Sheet Rev. 2009-11-11
PTFB192503EL/FL Confidential, Limited Internal Distribution Revision History: 2009-11-11 2009-09-14, Data Sheet Previous Version: Page Subjects (major changes since last revision) update specifications
Data Sheet
Listen Your Comments information within this document that feel wrong, unclear missing all? Your feedback will help continuously improve quality this document. Please send your proposal (including reference this document) highpowerRF@infineon.com request other information, contact 3667 (1-877-GO-LDMOS) 0600 International
Edition 2009-11-11 Published Infineon Technologies 81726 Munich, Germany 2009 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered. Data Sheet Rev. 2009-11-11

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