PD57030 PD57030S
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PD57030 - PD57030
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PD57030 PD57030S
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N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT with gain PLASTIC PACKAGE
DESCRIPTION PD57030 common source N-Channel, enhancement-mode, lateral Field-Effect power transistor. designed high gain, broad band commercial industrial applications. operates common source mode frequencies 1GHz. PD57030 boasts excellent gain, linearity reliability ST's latest LDMOS technology mounted first true plastic power package, PowerSO-10RF. PD57030's superior linearity performance makes ideal solution base station applications. PowerSO-10 plastic package, designed offer high reliability, first JEDEC approved, high power package. been specially optimized needs offers excellent performances ease assembly.
PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030
PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S
ABSOLUTE MAXIMUM RATINGS(TCASE
Symbol V(BR)DSS PDISS TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature
Value 52.8
Unit
THERMAL DATA (TCASE
th(j-c) 2000 Junction-Case Thermal Resistance
0C/W
PD57030 PD57030S
ELECTRICAL SPECIFICATION(TCASE STATIC
Symbol V(BR)DSS IDSS IGSS GS(Q) VDS(ON) COSS Parameter 10mA 50mA Min. Typ. Max. Unit
DYNAMIC
Symbol POUT LOAD Mismatch Parameter 50mA 50mA 50mA 50mA Min. 10:1 Typ. Max. Unit VSWR
945MHz PHASE ANGLES
CONNECTION
SOURCE
GATE
DRAIN
SC15200
PD57030 PD57030S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
PD57030 PD57030S
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