NM27P040
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NM27P040 - NM27P040
NM27P040 304-Bit (512K Processor Oriented CMOS EPROM
NM27P040 304-Bit (512K Processor Oriented CMOS EPROM
NM27P040 4096K Processor Oriented EPROM (POP) configured 512K It's designed simplify microprocessor interfacing while remaining compatible with standard EPROMs reduce both wait states glue logic when specification improvements taken advantage system design NM27P040 implemented National's advanced CMOS EPROM process provide reliable solution access times fast interface improvements address areas eliminate need additional devices adapt EPROM microprocessor eliminate wait states termination access cycle Even with these improvements NM27P040 remains compatible with industry standard JEDEC pinout EPROMs time from being negated until outputs guaranteed high impedance state been reduced eliminate need wait states termination memory cycle data-out hold time been extended eliminate need provide data hold time microprocessor delaying control signals latching holding data external latches
Features
Fast output turn eliminate wait states Extended data hold time microprocessor compatibility High performance CMOS access time JEDEC standard configuration Manufacturer's identification code
Block Diagram
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TRI-STATE registered trademark National Semiconductor Corporation POPis trademark National Semiconductor Corporation C1995 National Semiconductor Corporation 11367 RRD-B30M105 Printed
Connection Diagrams
27C080 27C020 27C010
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NM27P040
27C010
27C020
27C080
Note Compatible EPROM configurations shown blocks adjacent NM27P040
Commercial Temperature Range Parameter Order Number NM27P040 NM27P040 NM27P040 Access Time (ns)
Extended Temperature Range (b40 Parameter Order Number NM27P040 NM27P040 Access Time (ns)
Military Temperature Range (b55 Parameter Order Number NM27P040 NM27P040 Names Addresses Chip Enable Program Output Enable Outputs Don't Care (During Read) Access Time (ns)
Package Types NM27P040 QXXX Quartz-Windowed Ceramic packages conform JEDEC standard versions guaranteed function slower speeds
Absolute Maximum Ratings (Note
Military Aerospace specified devices required please contact National Semiconductor Sales Office Distributors availability specifications Storage Temperature Input Voltages except with Respect Ground (Note with Respect Ground Supply Voltage with Respect Ground
Operating Range
Range Commercial Industrial Military Temperature
Tolerance
2000V Protection Output Voltages with Respect Ground (Note
Read Operation Electrical Characteristics Over operating range with
Symbol ISB1 ISB2 Parameter Input Level Input High Level Output Voltage Output High Voltage Standby Current (CMOS) (Note Standby Current Active Current Supply Current Read Voltage Input Load Current Output Leakage Current VOUT
Test Conditions
Units
Electrical Characteristics Over operating range with
Symbol tACC (Note (Note (Note Parameter Address Output Delay Output Delay Output Delay Output Disable Output Float Chip Disable Output Float Output Hold from Addresses Whichever Occurred First Units
Capacitance
Symbol COUT Parameter Input Capacitance Output Capacitance
(Note Conditions VOUT Units
Test Conditions
Output Load Input Rise Fall Times Input Pulse Levels Gate (Note Timing Measurement Reference Level Inputs Outputs
Waveforms (Notes
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Note Stresses above those listed under ``Absolute Maximum Ratings'' cause permanent damage device This stress rating only functional operation device these other conditions above those indicated operational sections this specification implied Exposure absolute maximum rating conditions extended periods affect device reliability Note This parameter only sampled 100% tested Note delayed tACC after falling edge without impacting tACC Note compare level determined follows High TRI-STATE measured VOH1 (DC) TRI-STATE measured VOL1 (DC) Note TRI-STATE attained using Note power switching characteristics EPROMs require careful device decoupling recommended that least ceramic capacitor used every device between Note outputs must restricted avoid latch-up device damage Note Gate includes fixture capacitance Note connected except during programming Note Inputs outputs undershoot Note CMOS input
Programming Waveform (Note
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Programming Characteristics (Notes
Symbol tOES tVPS tVCS tOUT Parameter Address Setup Time Setup Time Data Setup Time Setup Time Setup Time Address Hold Time Data Hold Time Output Enable Output Float Delay Program Pulse Width Data Valid from Supply Current during Programming Pulse Supply Current Temperature Ambient Power Supply Voltage Programming Supply Voltage Input Rise Fall Time Input Voltage Input High Voltage Input Timing Reference Voltage Output Timing Reference Voltage
Units
Conditions
Note National's standard product warranty applies only devices programmed specifications described herein Note must applied simultaneously before removed simultaneously after EPROM must inserted into removed from board with voltage applied Note maximum absolute allowable voltage which applied during programming Care must taken when switching supply prevent overshoot from exceeding this maximum specification least capacitor required across suppress spurious voltage transients which damage device Note Programming program verify tested with fast Progam Algorithm typical power supply voltages timings Note During power must brought high VIH) either coincident with before power applied
Fast Programming Algorithm Flow Chart
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FIGURE
Functional Description
DEVICE OPERATION modes operation EPROM listed Table should noted that inputs modes levels power supplies required power supply must during three programming modes must other three modes power supply must during three programming modes other three modes Read Mode EPROM control functions both which must logically active order obtain data outputs Chip Enable PGM) power control should used device selection Output Enable (OE) output control should used gate data output pins independent device selection Assuming that addresses stable address access time (tACC) equal delay from output (tCE) Data available outputs after falling edge assuming that been addresses have been stable least tACCtOE Standby Mode EPROM standby mode which reduces active power dissipation over from EPROM placed standby mode applying CMOS high signal input When standby mode outputs high impedance state independent input Output Disable EPROM placed output disable applying high signal input When output disable circuitry enabled except outputs high impedance state (TRI-STATE) Output OR-Typing Because EPROM usually used larger memory arrays National provided 2-line control function that accommodates this multiple memory connections 2-line control function allows lowest possible memory power dissipation complete assurance that output contention will occur most efficiently these control lines recommended that decoded used primary device selecting function while made common connection devices array connected READ line from system control This assures that deselected memory devices their power standby modes that output pins active only when data desired from particular memory device Programming CAUTION Exceeding (VPP) will damage EPROM Initially after each erasure bits EPROM ``1's'' state Data introduced selectively programming ``0's'' into desired locations Although only ``0's'' will programmed both ``1's'' ``0's'' presented data word only change ``0'' ``1'' ultraviolet light erasure EPROM programming mode when power supply required that least capacitor placed across ground suppress spurious voltage transients which damage device data programmed applied bits parallel data output pins levels required address data inputs When address data stable active program pulse applied input program pulse must applied each address location programmed EPROM programmed with Fast Programming Algorithm shown Figure Each Address programmed with series pulses until verifies good maximum pulses Most memory cells will program with single pulse EPROM must programmed with signal applied input Programming multiple EPROM parallel with same data easily accomplished simplicity programming requirements Like inputs parallel EPROM connected together when they programmed with same data level pulse applied input programs paralleled EPROM Program Inhibit Programming multiple EPROMs parallel with different data also easily accomplished Except like inputs (including parallel EPROMs common level program pulse applied EPROM's input with will program that EPROM high level input inhibits other EPROMs from being programmed Program Verify verify should performed programmed bits determine whether they were correctly programmed verify performed with must except during programming program verify AFTER PROGRAMMING Opaque labels should placed over EPROM window prevent unintentional erasure Covering window will also prevent temporary functional failure generation photo currents MANUFACTURER'S IDENTIFICATION CODE EPROM manufacturer's identification code programming When device inserted EPROM programmer socket programmer reads code then automatically calls specific programming algorithm part This automatic programming control only possible with programmers which have capability reading code Manufacturer's Identification code shown Table specifically identifies manufacturer device type code NM27P040 ``8F08'' where ``8F'' designates that
Functional Description (Continued)
made National Semiconductor ``08'' designates Megabit (512K part code accessed applying address Addresses A1-A8 A10-A18 control pins held Address held manufacturer's code held device code code read eight data pins Proper code access only guaranteed ERASURE CHARACTERISTICS erasure characteristics device such that erasure begins occur when exposed light with wavelengths shorter than approximately 4000 Angstroms should noted that sunlight certain types fluorescent lamps have wavelengths 3000 -4000 range recommended erasure procedure EPROM exposure short wave ultraviolet light which wavelength 2537 integrated dose intensity exposure time) erasure should minimum 15W-sec EPROM should placed within inch lamp tubes during erasure Some lamps have filter their tubes which should removed before erasure erasure system should calibrated periodically distance from lamp device should maintained inch erasure time increase square distance from lamp distance doubled erasure time increases factor Lamps lose intensity they When lamp changed distance changed lamp aged system should checked make certain full erasure occurring Incomplete erasure will cause symptoms that misleading Programmers components even system designs have been erroneously suspected when incomplete erasure problem SYSTEM CONSIDERATION power switching characteristics EPROMs require careful decoupling devices supply current three segments that interest system designer standby current level active current level transient current peaks that produced voltage transitions input pins magnitude these transient current peaks dependent output capacitance loading device associated transient voltage peaks suppressed properly selected decoupling capacitors recommended that least ceramic capacitor used every device between This should high frequency capacitor inherent inductance addition least bulk electrolytic capacitor should used between each eight devices bulk capacitor should located near where power supply connected array purpose bulk capacitor overcome voltage drop caused inductive effects board traces
Mode Selection
modes operation NM27P040 listed Table single power supply required read mode inputs levels except device signature
TABLE Modes Selection Pins Mode Read Output Disable Standby Programming Program Verify Program Inhibit
Note
(Note
Outputs DOUT High High DOUT High
TABLE Manufacturer's Identification Code Pins Manufacturer Code Device Code (12) (26) (21) (20) (19) (18) (17) (15) (14) (13) Data
NM27P040 304-Bit (512K Processor Oriented CMOS EPROM
Physical Dimensions inches (millimeters)
32-Lead EPROM Ceramic Dual-In-Line Package (JQ) Order Number NM27P040QXXX Package Number J32AQ
LIFE SUPPORT POLICY NATIONAL'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL PRESIDENT NATIONAL SEMICONDUCTOR CORPORATION used herein Life support devices systems devices systems which intended surgical implant into body support sustain life whose failure perform when properly used accordance with instructions provided labeling reasonably expected result significant injury user
National Semiconductor Corporation 1111 West Bardin Road Arlington 76017 1(800) 272-9959 1(800) 737-7018
critical component component life support device system whose failure perform reasonably expected cause failure life support device system affect safety effectiveness
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National Semiconductor Japan 81-043-299-2309 81-043-299-2408
National does assume responsibility circuitry described circuit patent licenses implied National reserves right time without notice change said circuitry specifications
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