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1 - 27 of about 27 for N mosfet.. |
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First line: full bridge ir2110 Full-bridge IR2110 irpds30a iru1239* N mosfet 100v 500A TEL: 0755-8380 8450 FAX: 0755-8380 8425 Abstract: .. 500V Single N-Channel HEXFET Power MOSFET in a MTP package 0 0 0 0. 19MT050XFA Discrete IRCI Modul .. Discrete Schottky DPAK 3,000 100V 5.500A D-PAK 1 1 0 0 CH. 50WQ10FNTRPB. F. Discrete Schottky DPAK 2 .. Tags: N mosfet 100v 500A iru1239* irpds30a Full-bridge IR2110 full bridge ir2110 transistors sot-223 06a TO-262 MOSFET TO-247AC Package igbt TO 220 Package High current N CHANNEL MOSFET TO 220 Package High current 250W N CHANNEL MOSFE Thyristor to220 thyristor 80A, 1200V Thyristor 40V 120A SOT323 MOSFET P sot-227 footprint SN76477 datasheet abstract.. |
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First line: N mosfet 100v 500A XI'AN IR-PERI Company Features HALF-BRODGE HEXFET Power MOSFET INT-F-PAK Abstract: .. • Advanced Process Technology VDSS=100V. • Ultra Low On-Resistance • Dynamic dv/dt Rating RDS .. Body Diode p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ=25oC,IS=300A,VGS=0V. trr .. Tags: N mosfet 100v 500A IBGT* datasheet abstract.. |
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First line: AO4454L AO4454L 100V N-Channel MOSFET SDMOS AO4454L fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with gate charge.The result outstanding efficiency with controlled switching behaviar. This universal technology well suited PWM, load switching general purpose applications. Abstract: .. AO4454L. 100V N-Channel MOSFET SDMOS TM. General Description Product Summary. VDS. ID at VGS=10V .. Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=500A/μs. Maximum Body-Diode Continuous .. Tags: AO4454L AO4454L |
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First line: berg tools PGA423 Three-Phase Buck Switching Converter Pentium Processors (HIP6301EVAL2) Application Note August 2000 AN9906 Author: Bogdan Duduman Abstract: .. HIP6301 Multiphase Buck PWM Controller and the HIP6601A Synchronous Buck MOSFET drivers. The .. Q1 BSS123CT-ND Logic N-MOSFET, 100V, 6Ω SOT-23 Digikey 1. Q2,4,6 HUF76132P3 UltraFETTM MOSFET .. Tags: PGA423 berg tools atx schematic HIP6301EVAL2 |
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First line: -97428 IRFH5020PbF HEXFET® Power MOSFET RDS(on) (@VGS 10V) Abstract: .. IRFH5020PbF HEXFETPower MOSFET. Notes through are on page 8. Features and Benefits. Features .. p-n junction diode. VDS = 200V, VGS = 0V. nC. VGS = 10V. TJ = 25°C, IF = 7.5A, VDD = 100V. MOSFET symbol. VDS .. Tags: IRFH5020PbF |
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First line: N mosfet 100v 500A AOT410L AOT410L 100V N-Channel MOSFET SDMOS AOT410L fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with gate charge Qrr.The result outstanding efficiency with controlled switching behavior. This universal technology well suited PWM, load switching genera Abstract: .. 100V N-Channel MOSFET SDMOS TM. General Description Product Summary. VDS 100V. I D at V GS =10V .. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ μs. Maximum Body-Diode Continuous .. Tags: AOT410L N mosfet 100v 500A AOT410L |
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First line: AOB410 AOB410 100V N-Channel MOSFET SDMOS AOB410 fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with gate charge Qrr.The result outstanding efficiency with controlled switching behavior. This universal technology well suited PWM, load switching general purpose applications Abstract: .. 100V N-Channel MOSFET SDMOS TM. General Description Product Summary. VDS. I D at V GS =10V 90A. R DS .. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ μs. Maximum Body-Diode Continuous .. Tags: AOB410 AOB410 |
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First line: AOT416 AOT416 100V N-Channel MOSFET SDMOS AOT416 fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with gate charge.The result outstanding efficiency with controlled switching behavior. This universal technology well suited PWM, load switching general purpose applications. Abstract: .. 100V N-Channel MOSFET SDMOS TM. General Description Product Summary. VDS. ID at VGS=10V 42A. RDS .. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/μs. Maximum Body-Diode Continuous .. Tags: AOT416 AOT416 |
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First line: AOB416 100V N-Channel MOSFET SDMOS AOB416 fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with gate charge.The result outstanding efficiency with controlled switching behavior. This universal technology well suited PWM, load switching general purpose applications. Abstract: .. 100V N-Channel MOSFET SDMOS TM. General Description Product Summary. VDS. ID at VGS=10V 45A. RDS .. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/μs. Maximum Body-Diode Continuous .. Tags: AOB416 |
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First line: AOD4126 AOD4126/AOI4126 100V N-Channel MOSFET SDMOS AOD4126&AOI4126 fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with gate charge.The result outstanding efficiency with controlled switching behavior. This universal technology well suited PWM, load switching general p Abstract: .. AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM. General Description Product Summary. VDS. ID .. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/μs. Maximum Body-Diode Continuous .. Tags: AOD4126 AOD4126 AOI4126 AOD4126 AOI4126 |
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First line: ZVT full bridge pwm controller arc welder /schematic inverter welder schematic inverter welder 4 schematic inverter welder schematic 1 phase APT9803 Hubert Aigner Kenneth Dierberger Denis Grafham Improving Full-bridge Phase-shift Converter Failure-free Operation Under Extreme Conditions Welding Simi Abstract: .. both the P-Body and N-epi regions Fig. 11 . Next the MOSFET channel is turned ON which diverts a .. These tests were con-ducted on an APT10026JN, a standard MOSFET and on an APT10026JVFR, a fast .. Tags: inverter welder schematic 1 phase inverter welder 4 schematic inverter welder schematic arc welder /schematic ZVT full bridge pwm controller ZVT full bridge zvt designing welding transformer welding rectifier schematic welding mosfet welding inverter welder mosfet welder inverter smps* ZVT welder smps* ZVT APT9803 |
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First line: 97490 IRFH5210PbF HEXFET® Power MOSFET RDS(on) Abstract: .. IRFH5210PbF HEXFETPower MOSFET. Notes through are on page 8. Features and Benefits .. p-n junction diode. VGS = 20V VGS = -20V. VDS = 100V, VGS = 0V. MOSFET symbol. VDS = 16V, VGS = 0V. VDD = 50V .. Tags: marking 33a on semiconductor IRFH5210PbF |
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First line: -96297 IRFH5010PbF HEXFET® Power MOSFET RDS(on) Abstract: .. IRFH5010PbF HEXFETPower MOSFET. Notes through are on page 8. Features and Benefits. www.irf.com .. = 50A, VDD = 50V di/dt = 500A/μs. TJ = 25°C, IS = 50A, VGS = 0V. showing the integral reverse. p-n .. Tags: IRFH5010PbF |
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First line: mosfet 400a APTM10UM02FA VDSS 100V RDSon 2.25m 25°C 570A* 25°C Abstract: .. * Specification of MOSFET device but output current must be limited to 500A to not exceed a delta .. VGS = 0V,VDS = 100V Tj = 25°C 400 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C .. Tags: mosfet 400a APTM10UM02FA |
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First line: APTM10UM01FA VDSS 100V RDSon 1.5m 25°C 860A* 25°C Abstract: .. * Specification of MOSFET device but output current must be limited to 500A to not exceed a delta .. VGS = 0V,VDS = 100V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C .. Tags: APTM10UM01FA |
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First line: BYT12-400 byt12 1000 datasheet power IGBT MOSFET transistor GTO SCR di GTO thyristor Application notes GTO thyristor driver CHARACTERISTICS POWER SEMICONDUCTORS Peter ABSTRACT This paper aims give brief overview essential characteristics power semiconductors, provide guide their selection particular Abstract: .. n-n+ D. G G S. G. D. S. I D R ON. V DS. d e f a b c V. ID. VDSS. Figure 17. The Power MOSFET: a Simplified .. This limit is rapidly increasing towards 1800V and a maximum rated current of 500A. The SOA is .. Tags: datasheet power IGBT MOSFET transistor GTO SCR di byt12 1000 thyristor drive dc motor speed control oz961 IGBT Designers Manual high power bipolar transistor selection GTO thyristor driver GTO thyristor Application notes GTO thyristor FAST SWITCHING THYRISTOR ST BYT12-800 BYT12-400 ST BYT12-400 datasheet abstract.. |
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First line: 95619 IRFB16N50KPbF Abstract: .. HEXFETPower MOSFET. Applications Switch Mode Power Supply SMPS Uninterruptible Power .. Body Diode p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 17A, VGS .. Tags: GY 530 IRFB16N50KPBF IRFB16N50KPbF |
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First line: APTC90DSK12CT1G Dual buck chopper Super Junction MOSFET chopper diode VDSS 900V RDSon 120m 25°C 25°C Application motor control Switched Mode Power Supplies Features Ultra RDSon Miller capacitance Ultra gate charge Avalanche energy rated Very rugged Abstract: .. = 100V f = 1MHz 330 pF Qg Total gate Charge 270 Qgs Gate – Source Charge 32 Qgd Gate – Drain Charge VGS .. = 10A, VR = 600V di/dt =500A/μs 40 nC f = 1MHz, VR = 200V 96 C Total Capacitance f = 1MHz, VR = 400V 69 pF .. Tags: APTC90DSK12CT1G |
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First line: APT33N90JCCU2 ISOTOP® Boost chopper Super Junction MOSFET chopper diode Abstract: .. ISOTOP® Boost chopper Super Junction MOSFET SiC chopper diode. VDSS = 900V RDSon = 120mΩ max @ Tj .. = 10A, VR = 600V di/dt =500A/μs 40 nC f = 1MHz, VR = 200V 96 C Total Capacitance f = 1MHz, VR = 400V 69 pF .. Tags: APT33N90JCCU2 |
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First line: APTC90DDA12CT1G Dual boost chopper Super Junction MOSFET chopper diode VDSS 900V RDSon 120m 25°C 25°C Application motor control Switched Mode Power Supplies Power Factor Correction Features Ultra RDSon Miller capacitance Ultra gate charge Avalanche energy rated Very rugged Abstract: .. = 100V f = 1MHz 330 pF Qg Total gate Charge 270 Qgs Gate – Source Charge 32 Qgd Gate – Drain Charge VGS .. = 10A, VR = 600V di/dt =500A/μs 40 nC f = 1MHz, VR = 200V 96 C Total Capacitance f = 1MHz, VR = 400V 69 pF .. Tags: Microsemi Avalanche 200v *801 transistor infineon APTC90DDA12CT1G |
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First line: APT33N90JCCU3 ISOTOP® Buck chopper Super Junction MOSFET chopper diode Abstract: .. Min Typ Max Unit Ciss Input Capacitance 6.8 Coss Output Capacitance VGS = 0V ; VDS = 100V f = 1MHz 0 .. = 10A, VR = 600V di/dt =500A/μs 40 nC f = 1MHz, VR = 200V 96 C Total Capacitance f = 1MHz, VR = 400V 69 pF .. Tags: APT33N90JCCU3 |
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First line: S4 DIODE schottky APTC90H12SCTG Full Bridge Series parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS 900V RDSon 120m 25°C 25°C Abstract: .. Series & SiC parallel diodes Super Junction MOSFET Power Module. APTC90H12SCTG. APTC90H12SCTG .. = 100V f = 1MHz 330 pF Qg Total gate Charge 270 Qgs Gate – Source Charge 32 Qgd Gate – Drain Charge VGS .. Tags: S4 DIODE schottky APTC90H12SCTG |
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First line: pgke 200 MEXICO LF 15A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE MEXICO LF 2A 250V 313 FUSE MEXICO LF 1A 250V 313 FUSE Electronic Product Selection Guide Littelfuse, focus what best developing manufacturing devices that protect electronic circuits applications from harm caused overcurrent overvoltage Abstract: .. Surface Mount N/A. ZA Series. 4-460 VAC 5.5-615 VDC 50-6,500A 0.1-52J Radial Leaded 5, 7, 10, 14 .. Surface Mount N/A. ZA Series. 4-460 VAC 5.5-615 VDC 50-6,500A 0.1-52J Radial Leaded 5, 7, 10, 14 .. Tags: MEXICO LF 1A 250V 313 FUSE MEXICO LF 2A 250V 313 FUSE MEXICO LF 5A 250V 314 FUSE MEXICO LF 15A 250V 326 FUSE pgke 200 varistor nec varistor 420 s 20k* time lag fuses 2 amp / 250 volt thyristor SCR 406 Thyristor catalog THERMAL Fuse SMT-50 SMT100 Slo-Blo 313 Series SLO 365 R SCR 30A 500V datasheet abstract.. |
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First line: 1000w inverter PURE SINE WAVE schematic diagram inverter PURE SINE WAVE schematic diagram AN1279 Offline Reference Design Using dsPIC® Authors: Sagar Khare Mohammad Kamil Microchip Technology Inc. Types Systems Abstract: .. Where n is the number of parallel MOSFETs. FIGURE 48: MOSFET DRIVE CIRCUIT. EQUATION 40: Q1 Q2 Q3 .. trying to measure 100V. We have a potential divider such that 100V would give 1.65V on the analog .. Tags: inverter PURE SINE WAVE schematic diagram 1000w inverter PURE SINE WAVE schematic diagram SCHEMATIC 1000w inverter schematic diagram UPS working and block diagram of ups wind inverter use of lm393 in offline ups ups/inverter SERVICE MANUAL UPS Telecom IT ups schematic UPS ONLINE ups design ups circuit schematic diagram 1000w ups battery charging through smps UPS 380v AN1279 |
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First line: CP Clare Prme 15002 LP 8029 REED RELAY 15005 zener diode 1N PH 48 sip 1A05 SECTIONS Clare Company Overview Abstract: .. MOSFET Drive. 6 Pin. N/A. N/A. 10V. 1μA. N/A. 2-100mA. N/A. No. Through Hole, Surface Mount, Tape & Reel. LDA .. Impulse Breakdown 100V/μ s V bd - - 500 - - 600 - - 625 V. Insulation Resistance 100V IR 1010 - - 10 10 - - .. Tags: sip 1A05 REED RELAY 15005 LP 8029 CP Clare Prme 15002 zener DIODE A112 zener diode 1N PH 48 zener 431 zener 0.25W std water pumping machine control schematic vlt 2800 varistor 594 ph ultrasonic transducers 48V ultrasonic transducer 40khz ultrasonic transducer "40 kHz" "200 kHz" impedanc ultrasonic proximity detector datasheet abstract.. |
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First line: SV5420US* smd diode 5d JANTXV 1N5811 SMD HE804 smd diode ED Edition 1.2. Space- Military Level Components 2008/08 Abstract: .. up to 120A 100V up to 1200V TBC ED inhouse spec TBC. IGBT + MOSFET Drivers MOSFET Drivers: Up to 600V .. +100°C L=-55°C to +105°C M=-55°C to +125°C N=-55°C to +145°C O=-55°C to +150°C P=-55°C to +175° .. Tags: smd diode ED HE804 JANTXV 1N5811 SMD smd diode 5d SV5420US* yd 2030 ic 5 pins umi 150 5A 250V uma* philips TUBE Light Choke Coil Winding Triax mfc 106 TCN30 TCN19 tcec SV5819UR-1* SV5418US SV4948 datasheet abstract.. |
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First line: 7803 3V 1A positive voltage regulator 1/lm 7803 Abstract: .. , power-supply AC/DC or DC/DC or power-component MOSFET’s, diodes, etc. test and burn-in .. requiring reliable, hot-swap performance and N+1 redundancy. 420W DC/DC Compact PCITM • Quad .. Tags: 1/lm 7803 7803 3V 1A positive voltage regulator l 7803 ,3V Positive Voltage Regulator , metal ca lm 7803 SHM-IC-1 WPN20R48S05 power convertibles WPN20R48S05 WPN20R24D15 WP06R24D12 VKP60mt512 example VKP60MT512 VKP60 VKA60MS12 UWR-5/2000-D24E UWR-3.3/4250-D48A UWR-12/1250-D48A datasheet abstract.. |
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