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MTM86727


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MTM86727 - MTM86727  
MTM86727 - MTM86727  

Multi Chip Discrete
MTM86727
Silicon N-channel (FET) Silicon epitaxial planar type (SBD)
DC-DC converter circuits switching circuits Overview
MTM86727 composite (N-channel schottky barrier diode) that highly suitable DC-DC converter other switching circuits.
Package
Code WSSMini6-F1 Name Gate Source Anode
Features
Built-in schottky barrier diode: resistance: (VGS short-circuit input capacitance (common source): Ciss Small package: WSSMini6-F1 (1.6 drive voltage: drive
Marking Symbo: Internal Connection
Cathode Drain Drain
Absolute Maximum Ratings 25°C
Parameter Drain-source surrender voltage Drain current
Symbol VDSS VGSS
Rating
Unit
Gate-source surrender voltage Peak drain current
Channel temperature Storage temperature
Tstg
+150
Reverse voltage
Forward current (Average)
IF(AV) IFSM
Non-repetitive peak reverse surge voltage Junction temperature Storage temperature
Tstg
+125
Overall
Total power dissipation
Note) sine wave cycle (Non-repetitive peak current) Measuring ceramic substrate absolute maximum rating without heat shink:
Publication date: October 2008
SJF00086CED
MTM86727
Electrical Characteristics 25°C±3°C
Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source resistance Drain-source resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Fall time Symbol VDSS IDSS IGSS Conditions 0.85 Unit
RDS(on) RDS(on) Ciss Coss Crss
Turn-off delay time
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Test circuit Duty Cycle VOUT VOUT td(on) td(off)
td(on) td(off) Parameter Symbol Conditions
SJF00086CED
0.47
Unit
Forward voltage Reverse current
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7031 measuring methods diodes.
WSSMini6-F1
0.20 -0.02
+0.05
(0.50) 1.60 ±0.05
1.00 ±0.05
(0.50)
±0.05
±0.05
SJF00086CED
±0.05
Unit:
1.40 0.02 ea0.50 (0.10) 1.60 ca5°
0.13 -0.03
+0.05
(0.15)
MTM86727
Request your special attention precautions using technical information semiconductors described this book
products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products. license granted intellectual property right other right owned Panasonic Corporation other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission company.
20080805

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