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MTM86727
Top Searches for this datasheetMTM86727 - MTM86727 MTM86727 - MTM86727 Multi Chip Discrete MTM86727 Silicon N-channel (FET) Silicon epitaxial planar type (SBD) DC-DC converter circuits switching circuits Overview MTM86727 composite (N-channel schottky barrier diode) that highly suitable DC-DC converter other switching circuits. Package Code WSSMini6-F1 Name Gate Source Anode Features Built-in schottky barrier diode: resistance: (VGS short-circuit input capacitance (common source): Ciss Small package: WSSMini6-F1 (1.6 drive voltage: drive Marking Symbo: Internal Connection Cathode Drain Drain Absolute Maximum Ratings 25°C Parameter Drain-source surrender voltage Drain current Symbol VDSS VGSS Rating Unit Gate-source surrender voltage Peak drain current Channel temperature Storage temperature Tstg +150 Reverse voltage Forward current (Average) IF(AV) IFSM Non-repetitive peak reverse surge voltage Junction temperature Storage temperature Tstg +125 Overall Total power dissipation Note) sine wave cycle (Non-repetitive peak current) Measuring ceramic substrate absolute maximum rating without heat shink: Publication date: October 2008 SJF00086CED MTM86727 Electrical Characteristics 25°C±3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source resistance Drain-source resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Fall time Symbol VDSS IDSS IGSS Conditions 0.85 Unit RDS(on) RDS(on) Ciss Coss Crss Turn-off delay time Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Test circuit Duty Cycle VOUT VOUT td(on) td(off) td(on) td(off) Parameter Symbol Conditions SJF00086CED 0.47 Unit Forward voltage Reverse current Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7031 measuring methods diodes. WSSMini6-F1 0.20 -0.02 +0.05 (0.50) 1.60 ±0.05 1.00 ±0.05 (0.50) ±0.05 ±0.05 SJF00086CED ±0.05 Unit: 1.40 0.02 ea0.50 (0.10) 1.60 ca5° 0.13 -0.03 +0.05 (0.15) MTM86727 Request your special attention precautions using technical information semiconductors described this book products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products. license granted intellectual property right other right owned Panasonic Corporation other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. 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