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Watt High Voltage Transistor
Silicon
COLLECTOR BASE EMITTER
MPSW10
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc Watt mW/°C Watts mW/°C
CASE 29-05, STYLE TO-92 (TO-226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage µAdc, Emitter-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO µAdc µAdc
Duty Cycle 2.0%.
Motorola Small-Signal Transistors, FETs Diodes Device Data Motorola, Inc. 1996
MPSW10
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc) VCE(sat) VBE(on) 0.75 0.85
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Pulse Test: Pulse Width
Duty Cycle 2.0%.
COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE, CURRENT GAIN 125°C
25°C
25°C
-55°C
COLLECTOR CURRENT (mA)
BASE CURRENT (mA)
Figure Current Gain
Figure Collector Saturation Region
TEMPERATURE COEFFICIENTS (mV/°C)
VOLTAGE (VOLTS) VCE(sat) IC/IB COLLECTOR CURRENT (mA) VBE(sat) IC/IB VBE(on) 25°C
-0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR CURRENT (mA) -55°C 125°C -55°C 25°C VCE(sat)
25°C 125°C
Figure "On" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
MPSW10
CAPACITANCE (pF) CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 25°C 25°C
REVERSE VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
Figure Current-Gain Bandwidth Product
COLLECTOR CURRENT (mA) CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 25°C DUTY CYCLE VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Active Region Safe Operating Area
Motorola Small-Signal Transistors, FETs Diodes Device Data
MPSW10
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. CONTOUR PACKAGE BEYOND DIMENSION UNCONTROLLED. DIMENSION APPLIES BETWEEN DIMENSIONS APPLY BETWEEN MIMIMUM. LEAD DIMENSION UNCONTROLLED BEYOND DIMENSION MINIMUM. INCHES 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 0.250 0.080 0.105 0.100 0.135 0.135 MILLIMETERS 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 6.35 2.04 2.66 2.54 3.43 3.43
SECTION
CASE 029-05 (TO-226AE) ISSUE
STYLE EMITTER BASE COLLECTOR
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MPSW10/D Motorola Small-Signal Transistors, FETs Diodes Device Data
*MPSW10/D*
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