MOS200519
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MOS200519 - MOS200519
Spec. MOS200519 Issued Date 2005.12.01 Revised Date 2005.12.16 Page
H50N03E
N-Channel Enhancement-Mode MOSFET (25V, 50A)
H50N03E Assignment
Features
RDS(on)=11m@VGS=10V, ID=30A RDS(on)=18m@VGS=4.5V, ID=30A Advanced trench process technology High Density Cell Design Ultra On-Resistance Specially Designed DC/DC Converters Motor Drivers Fully Characterized Avalanche Voltage Current Improved Shoot-Through
3-Lead Plastic TO-220AB Package Code: Gate Tab: Drain Source
Internal Schematic Diagram
Maximum Ratings Thermal Characteristics
(TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TC=25oC Operating Junction Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)*2
Maximum current limited package. 1-in2 board
Symbol TJ,Tstg
Value
Units
Switching Test Circuit
Switching Waveforms
td(on) toff td(off)
VGEN
VOUT
Output, VOUT
Inverted
Input,
Pulse Width
H50N03E
HSMC Product Specification
ELectrical Characteristics
Characteristic Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
NOTE: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. MOS200519 Issued Date 2005.12.01 Revised Date 2005.12.16 Page
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BVDSS RDS(on) VGS(th) IDSS IGSS
VGS=0V, ID=250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=24V, VGS=0V VGS=±20V, VDS=0V VDS=0V, VGS=1V 1MHz VDS=10V, ID=35A
±100
td(on) td(off) Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz VDD=15V, RL=15, ID=1A VGEN=10V, RG=24 VDS=15V, ID=35A, VGS=10V
18.4 3.57 11.7 3.87 32.13 1176.3 268.43 142.67
IS=20A, VGS=0V
0.87
H50N03E
HSMC Product Specification
Characteristics Curve
Fig.1 Output Characteristic
VGS=5.0V,6.0V,10.0V 4.5V VDS=10V
Spec. MOS200519 Issued Date 2005.12.01 Revised Date 2005.12.16 Page
Fig.2 Transfer Characteristic
Drain-to-Source Current
Drain Source Current
4.0V
TJ=125
3.5V 3.0V
Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Fig.3 Resistance Drain Current
Fig.4 Resistance Gate Source Voltage
ID=30A
RDS(ON), On-Resistance (mohm)
VGS=4.5V VGS=10.0V
RDS(ON), On-Resistance (mohm)
Drain Current
VGS, Gate-to-Source Voltage
Fig.5 Resistance Junction Temperature
3000 VGS=10V ID=30A Ciss
Fig.6 Capacitance
f=1MHz VGS=0V
RDS(ON), On-Resistance (Normalized)
RDS(ON), On-Resistance (mohm)
2500
2000
1500
1000
Coss, Crss
Junction Temperature
VDS, Drain-to-Source Voltage
H50N03E
HSMC Product Specification
TO-220AB Dimension
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Spec. MOS200519 Issued Date 2005.12.01 Revised Date 2005.12.16 Page
Date Code Control Code
Note: Green label used pb-free packing Style: 1.Gate Tab.Drain 3.Source Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48
Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87
Typical, Unit:
3-Lead TO-220AB Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
H50N03E
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. MOS200519 Issued Date 2005.12.01 Revised Date 2005.12.16 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120
150oC 200oC 60~180
<3oC/sec
<3oC/sec
183oC 60~150 +0/-5 10~30 <6oC/sec minutes
217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature 245oC ±5oC +0/-5
Dipping time 5sec ±1sec 5sec ±1sec
H50N03E
HSMC Product Specification
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