MMPQ2222
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MMPQ2222 - MMPQ2222
Order this document MMPQ2222/D
Quad General Purpose Transistors
Silicon
MMPQ2222 MMPQ2222A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO Each Transistor Total Power Dissipation 25°C Derate above 25°C Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range 0.52 Tstg 19.2 +150 MMPQ2222 Four Transistors Equal Power Watts mW/°C Watts mW/°C MMPQ2222A Unit mAdc
CASE 751B-05, STYLE SO-16
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) mAdc, Collector Base Breakdown Voltage mAdc, Emitter Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width MMPQ2222 MMPQ2222A IEBO MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A V(BR)CEO V(BR)CBO V(BR)EBO ICBO nAdc nAdc
Duty Cycle 2.0%.
Thermal Clad trademark Bergquist Company
Preferred devices Motorola recommended choices future best overall value.
Motorola Small-Signal Transistors, FETs Diodes Device Data Motorola, Inc. 1996
MMPQ2222 MMPQ2222A
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain(1) Collector Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc) mAdc, mAdc) Base Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc) mAdc, mAdc) MMPQ2222A MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222A VCE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A VBE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product(1) mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz)
SWITCHING CHARACTERISTICS
Turn-On Time (VCC Vdc, VBE(off) -0.5 Vdc, mAdc, mAdc) Turn-Off Time (VCC Vdc, mAdc, mAdc) Pulse Test: Pulse Width
toff
Duty Cycle 2.0%.
Motorola Small-Signal Transistors, FETs Diodes Device Data
MMPQ2222 MMPQ2222A
INFORMATION USING SO-16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT SURFACE MOUNTED APPLICATIONS
Surface mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection interface between board package. With correct geometry, packages will self align when subjected solder reflow process.
0.060 1.52
0.275
0.155
0.024
0.050 1.270
inches
SO-16 SO-16 POWER DISSIPATION
power dissipation SO-16 function size. This vary from minimum size soldering size given maximum power dissipation. Power dissipation surface mount device determined J(max), maximum rated junction temperature die, RJA, thermal resistance from device junction ambient, operating temperature, Using values provided data sheet SO-16 package, calculated follows: TJ(max)
SOLDERING PRECAUTIONS
melting temperature solder higher than rated temperature device. When entire device heated high temperature, failure complete soldering within short time could result device failure. Therefore, following items should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should 100°C less.* When preheating soldering, temperature leads case must exceed maximum temperature ratings shown data sheet. When using infrared heating with reflow soldering method, difference shall maximum 10°C. soldering temperature time shall exceed 260°C more than seconds. When shifting from preheating soldering, maximum temperature gradient shall less. After soldering been completed, device should allowed cool naturally least three minutes. Gradual cooling should used forced cooling will increase temperature gradient result latent failure mechanical stress. Mechanical stress shock should applied during cooling. Soldering device without preheating cause excessive thermal shock stress which result damage device.
values equation found maximum ratings table data sheet. Substituting these values into equation ambient temperature 25°C, calculate power dissipation device which this case watts. 150°C 25°C 125°C/W watts
125°C/W SO-16 package assumes recommended footprint glass epoxy printed circuit board achieve power dissipation watts. There other alternatives achieving higher power dissipation from SO-16 package. Another alternative would ceramic substrate aluminum core board such Thermal CladTM. Using board material such Thermal Clad, aluminum core board, power dissipation doubled using same footprint.
Motorola Small-Signal Transistors, FETs Diodes Device Data
MMPQ2222 MMPQ2222A
PACKAGE DIMENSIONS
0.25 (0.010)
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. DIMENSIONS INCLUDE MOLD PROTRUSION. MAXIMUM MOLD PROTRUSION 0.15 (0.006) SIDE. DIMENSION DOES INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL 0.127 (0.005) TOTAL EXCESS DIMENSION MAXIMUM MATERIAL CONDITION. MILLIMETERS 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 0.19 0.25 0.10 0.25 5.80 6.20 0.25 0.50 STYLE INCHES 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 0.008 0.009 0.004 0.009 0.229 0.244 0.010 0.019
SEATING PLANE
0.25 (0.010)
CASE 751B-05 SO-16 ISSUE
COLLECTOR, COLLECTOR, COLLECTOR, COLLECTOR, COLLECTOR, COLLECTOR, COLLECTOR, COLLECTOR, BASE, EMITTER, BASE, EMITTER, BASE, EMITTER, BASE, EMITTER,
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Small-Signal Transistors, FETs Diodes Device Data
*MMPQ2222/D*
MMPQ2222/D
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