| Fulltext Datasheet Results |
1 - 50 of about 118 for LM 2222 |
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First line: LM 2222 Abstract: .. PDO/ANO~14,---_ _ _~ A~:r~5·c,,"VVK'r-PDO/AN1~13,--_ _ _ _ _ _~1/4 LM~mM PDO/AN2~12'-t .. rh ~2222 OB-9. Q1. 10. vss. sa VRL. gliB. n 3 RS-232 12 TO/FROM PC .. Tags: LM 2222 |
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First line: st 7033 LM 2222 Phawo.k. Medium Frequency Capacitors, Water Cooled ESTAfilm®, SINGLE OUTPUTS SUBDIVIDED, 5000Hz Abstract: .. • All-fi lm winding in brass sheet welded casing; • Casing conductive, or grounded; • Casing .. 3000 6666 236 2222 X X 1000. 600 250 560 2377 2240 X X 1000. 600 1500 1105 2500 X X 700. 1000 2500 663 2500 X .. Tags: LM 2222 st 7033 datasheet abstract.. |
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First line: LM 2222 Phawo.k. Medium Frequency Capacitors, Water Cooled ESTAfilm®, SINGLE OUTPUTS SUBDIVIDED, 5000Hz Abstract: .. • All-fi lm winding in brass sheet welded casing; • Casing conductive, or grounded; • Casing .. 3000 6666 236 2222 X X 1000. 600 250 560 2377 2240 X X 1000. 600 1500 1105 2500 X X 700. 1000 2500 663 2500 X .. Tags: LM 2222 K 1833 2292 datasheet abstract.. |
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First line: Phawo.k. Medium Frequency Capacitors, Water Cooled ESTAfilm®, SINGLE OUTPUTS SUBDIVIDED, 5000Hz Abstract: .. • All-fi lm winding in brass sheet welded casing; • Casing conductive, or grounded; • Casing .. 3000 6666 236 2222 X X 1000. 600 250 560 2377 2240 X X 1000. 600 1500 1105 2500 X X 700. 1000 2500 663 2500 X .. Tags: datasheet abstract.. |
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First line: J673* DD 127 D 7m A2222* 064J* S29WS128J/064J 128/64 Megabit (8/4 16-Bit) CMOS Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Distinctive Characteristics Abstract: .. 7,:LM-:L! E 3N;% 4&*" "%"" "%!"" %! ?" " 7. AAD!*A*AD!;E;E$D5A7. 5AD" ! "4"4$C!%8 .. 22226 !2222= !22223 !! ""//0?""-20? 222212!2222-2!22222! ;"! ! ""+/ ! 2222+!2222+6 .. Tags: 064J* A2222* DD 127 D 7m J673* Q.E D61 122227 S29WS128J 064J |
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First line: pzz|l kh{l pzz|l YWW_U XYUX_ zwljpmpjh{pvu Abstract: .. IO TPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP 2222. 2222KKKK 6U # MI&#OJIOMJ .. lm D$'LN& ij5. n !""#$%&' E * ,- 678 7 % !/0 !10 !20 !30 !4. !0 90 60 :0 80 -0 ;0 < =/0 =10 =20 =30 =4. > ] 8 .. Tags: mi cj datasheet abstract.. |
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First line: 7110821, D0b31t,4 BIPHIN Philips Semiconductors_Product specification PHILIPS INTERNATIONAL push-pull power transistor BLV948 Double input output matching easy matching high gain Poly-siiicon emitter-ballasting resistors optimum temperature profile Gold metallization ensures excellent reliability. s Abstract: .. CATALOGUE NO. 222208578108 2222 085 75109 202201900056 2222 581 76641 2222 581 76627. 1 JlF, 35 V .. 11.32 inch; thickness of copper sheet 2 x 35 J.lm. 3. Cables soldered to striplines L 1 and L32 .. Tags: transistor tt 2222 TT 2222 TT 2222 npn L33 TRANSISTOR 15 w RF POWER TRANSISTOR NPN datasheet abstract.. |
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First line: D0440* trimmer capacitor ceramic philips catalog potentiometer Philips Semiconductora Product push-pull power transistor PHILIPS INTERNATIONAL High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Abstract: .. / PLIW Class-B operation; VDS = 28 V; lM = 2 x 160 mA; f =s 500 MHz; = 1.1 + j0.6 ß per section . Fig .. pF C4 film dielectric trimmer 2to9pF 2222 809 09005 C5 multilayer ceramic chip capacitor note .. Tags: philips catalog potentiometer trimmer capacitor ceramic D0440* datasheet abstract.. |
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First line: AF203 si 220 mh AI 757 103 Ceramic Disc Capacitors HF/VHF power transistor BLF241 pLJILIPS INTERNATIONAL FEATURES CONFIGURATION High power gain Easy power control Good thermal stability Abstract: .. multilayer ceramic chip capacitor 1 nF 2222 581 13102 C4, C8 multilayer ceramic chip capacitor .. \ 'l \ [l Class-B operation; VDS = 28 V; lM = 10 mA; Ros = 47 ß. Fig.19 Load impedance as a function of .. Tags: 103 Ceramic Disc Capacitors AI 757 si 220 mh AF203 datasheet abstract.. |
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First line: 2222b* gf ia gi transistor k84 jrm 45 diodes h7d pzz|l kh{l pzz|l YWW`U zwljpmpjh{pvu Abstract: .. ####..''''!!!!----2222----!!!!+$$$$----%%%%0000 &%3'4 #4$0*5678803 .. YYYYIIII =LM?PMLMFV =LM?PMLMFV =LM?PMLMFV =LM?PMLMFV $=GF $=GF $=GF $=GF -F=RG -F=RG -F .. Tags: diodes h7d jrm 45 transistor k84 2222b* GM 74 gf ia gi datasheet abstract.. |
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First line: 2222b* transistor k84 jrm 45 diodes h7d pzz|l kh{l pzz|l YWW`U zwljpmpjh{pvu Abstract: .. ####..''''!!!!----2222----!!!!+$$$$----%%%%0000 &%3'4 #4$0*5678803 .. YYYYIIII =LM?PMLMFV =LM?PMLMFV =LM?PMLMFV =LM?PMLMFV $=GF $=GF $=GF $=GF -F=RG -F=RG -F .. Tags: diodes h7d jrm 45 transistor k84 2222b* GM 74 gf ia gi datasheet abstract.. |
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First line: 2222b* jrm 45 diodes h7d pzz|l kh{l pzz|l YWW`U zwljpmpjh{pvu Abstract: .. ####..''''!!!!----2222----!!!!+$$$$----%%%%0000 &%3'4 #4$0*5678803 .. YYYYIIII =LM?PMLMFV =LM?PMLMFV =LM?PMLMFV =LM?PMLMFV $=GF $=GF $=GF $=GF -F=RG -F=RG -F .. Tags: diodes h7d jrm 45 2222b* GM 74 datasheet abstract.. |
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First line: 2134B ERJT06* RC-2134B ERJT14 Anti-Surge Thick Film Chip Resistors Anti-Surge Thick Film Chip Resistors 0603, 0805, 1206, 1210 P03, P06, P08, Abstract: .. Three digit type ±5% , four digit type ±1%, ±0.5% Example: 2222.2 k , 100210 k . Resistance .. fi lm resistors ● High reliability Metal glaze thick fi lm resistive element and three layers of .. Tags: ERJT14 RC-2134B ERJT06* 2134B datasheet abstract.. |
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First line: 70483180* SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER Abstract: .. LM-323 LM-323/LT-323AK 70420323 +5V 3A TO-3 REG. * Original in-house part obsolete; no longer .. 2222+ MOSFET 70402222 60V ENHANCEMENT. SK-3586* 2N5951, J-231* 70405951 40V N-CH. SPS .. Tags: 70483180* 70473180* ic tda 4558 pdf datasheet MJ 15030 tda 4558 Zener Diode Glass 50v zener 431 ZENER 1N4 Datasheet zener 1n34a ZENER 10V/400mW XR-4741* X8 diode zener UAA 761 A UAA 180 Triac TDA TRIAC RCA datasheet abstract.. |
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First line: BENZ PROXIMITY SWITCHES T71-T72 j172 marking LM A2 Low-speed Monitoring Unit G9SX-LM Low-speed Monitoring Function Ensures Safety Maintenance Work Motor rotation speed detected Proximity Sensor. Monitors confirms that speed does exceed preset level. Includes Enabling Switch input maintenance work. D Abstract: .. 2. If G9SX-LM@ is operated without proximity sensors being connected, G9SX-LM@ will detect .. , PuDong New Area, Shanghai, 200120, China Tel: 86 21-5037-2222/Fax: 86 21-5037-2200 Cat .. Tags: marking LM A2 j172 T71-T72 BENZ PROXIMITY SWITCHES datasheet abstract.. |
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First line: TRANSISTOR 2X4 1^53131 0030055 Product specification linear push-pull power transistor High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. Abstract: .. , 500 V C36 film dielectric trimmer 2 to 18 pF 2222 809 09003 L1, L3, L22, L24 stripline note 2 50 .. .2 ; thickness lAs inch; thickness of copper sheet 2 x 35 J.lm. 3. Semi-rigid cables L2 and L23 .. Tags: TRANSISTOR 2X4 datasheet abstract.. |
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First line: BH RV transistor tt 2222 transistor TT 2222 Preliminary HF/VHF power transistor BLF221B PHILIPS INTERNATIONAL 7110fl5b 0DM37Mel HIPHIN High power gain Easy power control Gold metallization Good thermal stability Abstract: .. multilayer ceramic chip capacitor 1 nF 2222 581 13102 C4, C8 multilayer ceramic chip capacitor .. 40 0 -40 -80 -120 50 100 150 200 f MHz Ciass-B operation; VDS = 12.5 V; lM = 20 mA; Rqs = 221 n; PL = 2 W. .. Tags: transistor TT 2222 tt 2222 BH RV transistor datasheet abstract.. |
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First line: ERJU01 ERJU06 Anti-Sulfurated Thick Film Chip Resistors Anti-Sulfurated Thick Film Chip Resistors 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: S02, S03, S06, S08, S12, S1D, (Au-based inner electrode type) Type: U01, U02, U03, U06, U08, U14 Abstract: .. Example: 2222.2 k, 100210 k. Resistance Value. Type: inch S14 : 1210 U14 S12. : 1812 U12 S1D : 2010 .. glaze thick fi lm resistive element and three layers of electrodes ● Suitable for both refl ow .. Tags: ERJU06 ERJU01 RC-2134B |
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First line: r2r resistor ladder networks smd PIC16F877A Free Projects Bourns® Resistor Networks Short Form Catalog What Resistor Network? resistor network single package that contains more resistors. package will include multiple leads which network made part larger circuit. Abstract: .. • Th ick-fi lm and Precision Th in-fi lm Package. Types: Th rough-hole: Conformal SIP, Molded .. 4800T Medium Body 4116 T - 2 - 2222 F A B. Model • 41 = Molded DIP • 43 = Molded SIP • 44 = SOL Wide Body .. Tags: PIC16F877A Free Projects smd CANT r2r resistor ladder networks smd r2r resistor ladder R2R network network resistor datasheet abstract.. |
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First line: 25 Q 80 wideband transistor BFG198 planar epitaxial transistor plastic SOT223 envelope, intended wideband amplifier applications. device features high gain excellent output voltage capabilities. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VcBO lector-base voltage open emitte Abstract: .. note 1 multilayer ceramic capacitor 10 nF 2222 629 08103 C8 multilayer ceramic capacitor 1.5 .. Er = 2.2 ; thickness 1f.t6 inch; thickness of copper sheet 2 x 35 J.lm; see Fig.2. 1995 Sep 12. 4 .. Tags: 25 Q 80 datasheet abstract.. |
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First line: philips catalog potentiometer MB8776* Philips Semiconductors Product specification HF/VHF power transistor PHILIPS INTERNATIONAL High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch. Abstract: .. chip capacitor 2 X 100 nF in parallel, 50 V 2222 852 47104 07 tantalum electrolytic capacitor 2.2 .. 711QflBb D0M37fi3 S35 MP 0 25 50 75 100 125 150 175 200 f MHz Class-AB operation; V^ = 12.5 V; lM .. Tags: MB8776* philips catalog potentiometer datasheet abstract.. |
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First line: philips catalog potentiometer C11-C13 BLF522 Philips Semiconductora power transistor PHILIPS INTERNATIONAL High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch Abstract: .. 6 PL W 7 Class-B operation; V«, = 12.5 V; lM = 50 mA; f = 500 MHz. Fig.9 Power gain and efficiency as .. 50 V C14 electrolytic capacitor 10 jiF, 63 V 2222 030 38109 L1 stripline note 3 50 Q 36.6 x 2.5 mm .. Tags: BLF522 C11-C13 philips catalog potentiometer datasheet abstract.. |
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First line: 2.22 pf trimmer pj 809 push-pull power transistor BLF247B High power gain Easy power control Good thermal stability Withstands full load mismatch. Abstract: .. dielectric trimmer 2 to 18 pF 2222 809 09006 C17 multilayer ceramic chip capacitor; note 1 6.8 pF .. 1;16 inch; thickness of the copper sheet 2 x 35 J.Lm. Semi-rigid cables L2 and L25 are soldered .. Tags: pj 809 2.22 pf trimmer datasheet abstract.. |
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First line: sot123 SOT123 Package power transistor PHILIPS INTERNATIONAL High power gain noise figure Easy power control Good thermal stability Abstract: .. C3, C4, C9 film dielectric trimmer 5 to 60 pF 2222 809 08003 C5 multilayer ceramic chip capacitor .. i i \ \ V \ \ i 20 40 60 80 100 120 f MHz C!ass-B operation; VDS = 28 V; lM = 25 mA; PL = 15 W; Th = 25 °C; Rlh .. Tags: SOT123 Package sot123 datasheet abstract.. |
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First line: sot289 TT 2222 npn TT 2222 cross reference TT 2222 transistor tt 2222 Philips Semiconductors 711D6Sb linear push-pull power_ _BLV58 transistor philips international High power gain Double stage internal input matching high input impedance Diffused emitter-ballasting resistors enhances ruggedness Gol Abstract: .. , C19, C25 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9, 011, C16, C20, C22, C28 63 V .. , thickness %2 inch, thickness of copper sheet 2 x 35 J.lm. 3. Cables L2 and L21 are soldered to .. Tags: transistor tt 2222 TT 2222 TT 2222 cross reference TT 2222 npn sot289 datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSB^Bl DDE^ll? BLV90/SL IAPX POWER TRANSISTOR silicon planar epitaxial transistor designed mobile radio transmitters band. diffused emitter-ballasting resistors optimum temperature profile. Abstract: .. no. 2222 809 09001 2 to 9 pF film dielectric trimmer cat. no. 2222 809 09002 5.6 pF multilayer .. ; thickness of copper-sheet 2 x 35 J.lm. American Technical Ceramics capacitor type 100A or .. Tags: datasheet abstract.. |
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First line: max 51123 iec 90092 Pulse Polypropylene Film Capacitors Radial Epoxy Lacquered Type Abstract: .. DIMENSIONS wmax × h h’ max× lm ax mm MASS g CATALOG NUMBER 2222 479 .. AND PACKAGING. LOOSE IN BOX REEL. lt = 5.0 ± 1.0 mm all leads pitch 7.5 mm bent back original pitch. C-tol = ± 5 % C-tol = ± 5 .. Tags: iec 90092 max 51123 MKP 479 90406 90116 90026 62183* 41304 32564 datasheet abstract.. |
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First line: Pulse Polypropylene Film Capacitors Radial Epoxy Lacquered Type Abstract: .. DIMENSIONS wmax × h h’ max× lm ax mm MASS g CATALOG NUMBER 2222 479 .. AND PACKAGING. LOOSE IN BOX REEL. lt = 5.0 ± 1.0 mm all leads pitch 7.5 mm bent back original pitch. C-tol = ± 5 % C-tol = ± 5 .. Tags: MKP 479 90406 90398 90217 90116 90026 62183* 41304 32564 datasheet abstract.. |
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First line: BLF278* 78LOS* BLF278 78los Product Specification push-pull power transistor BLF278 High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Abstract: .. C5 film dielectric trimmer 4 to 40 pF 2222 809 08002 C6, C30 film dielectric trimmer 2 to 18 pF 2222 .. r = 2.2 , thickness V16 inch; thickness of copper sheet 2 x 3S /-lm. L22 is soldered on to .. Tags: 78los BLF278 78LOS* BLF278* datasheet abstract.. |
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First line: Philips 7110flgb DDbSb^g MPHIN Product specification PHILIPS INTERNATIONAL power transistor BLU10/12 Emitter -ballasting resistors optimum temperature profile Gold metallization ensures excellent reliability Withstands full load mismatch. silicon ptanar epitaxial transistor encapsulated 4-pin SOT122 Abstract: .. trimmer 1.4 to 5.5 pF 2222 809 09001 C5, C6 multilayer ceramic chip capacitor 15 pF 2222 851 13159 .. lm temperature prof He Gold meta'Hzation ensures excellent reliability. QUICK REFERENCE .. Tags: datasheet abstract.. |
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First line: Philips 2222-030 Philips 2222-581 power transistors High input output impedances promote easy matching Implanted ballast resistors optimum temperature profile Gold metallization ensures excellent reliability. silicon planar epitaxial transistors intended common emitter, class-AB operation base stati Abstract: .. 2222 030 28109 C3, C5, C8 Tekelec type 5201 trimming capacitor 0.8 to 10 pF 04, C9 500 V multilayer .. ; thickness of copper sheet 2 x 35 /lm. 2. American Technical Ceramics capacitor type 1008, or .. Tags: Philips 2222-581 Philips 2222-030 datasheet abstract.. |
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First line: Anti-Surge Thick Film Chip Resistors Anti-Surge Thick Film Chip Resistors 0603, 0805, 1206, 1210 P03, P06, P08, Abstract: .. Example: 2222.2 k 100210 k . Resistance Value. Packaging Methods. Code. V. U. Type ERJP03 ERJP06 .. fi lm resistors ● High reliability Metal glaze thick fi lm resistive element and three layers of .. Tags: datasheet abstract.. |
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First line: Anti-Surge Thick Film Chip Resistors Anti-Surge Thick Film Chip Resistors 0805, 1206, 1210 P06, P08, Abstract: .. Example: 2222.2 k 100210 k. Resistance Value. Packaging Methods. Code. V. U. Packaging. Punched .. fi lm resistors ● High reliability Metal glaze thick fi lm resistive element and three layers of .. Tags: datasheet abstract.. |
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First line: 2907A 2N2908* 2N2907 PNP Transistor 2N2908 SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS SILICIUM, PLANAR EPITAXIAUX *2N2906,A *2N2907,A Compi, 2221, 2222, amplification Amplification Medium current switching Commutation moyen courant Preferred device Dispositif Abstract: .. 2N 2222, A LF or HF amplification Amplification BF ou HF Medium current switching Commutation à .. Emitter·base voltage Tension 4mtltteur·lM.. -5. Collector current Courant co'IfIcteur. -0,6 .. Tags: 2N2908 2N2907 PNP Transistor 2N2908* 2907A datasheet abstract.. |
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First line: 2N2222 bjt npn bjt 2N2222 transistor BJT 2N2222 datasheet BJT 2N2222 datasheet BJT 2222 ProSLIC® from Silicon Laboratories integrates complete analog telephone interface into low-voltage CMOS device offers extensive software programmability meet many global telephony requirements customer specif Abstract: .. The general purpose 2222 transistor meets all of the above requirements. Calculate the value .. Q9 2222. R23 200k. Si3210M. i t IPK. N V BAT × LM ------------------------ t – = 0 I PK. N V BAT × LM .. Tags: 2N2222 bjt transistor BJT 2N2222 datasheet SDCL power BJT PNP npn bjt 2N2222 IBJT* bjt 2n2222 pdf BJT 2N2222 datasheet BJT 2222 "Silicon Laboratories" -si3014 -si3021 -v.92 -v.9 Si321x |
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First line: 222280905001* Produc^pecification linear push-pull power transistor BLV58 High power gain Double stage internal input matching high input impedance Diffused emitter-ballasting resistors enhances ruggedness Gold metallization high reliability. Abstract: .. dielectric trimmer 5.5 pF 2222 809 09005 C5 multilayer ceramic chip capacitor note 1 7.5 pF 07 .. .2 , thickness 11.32 inch, thickness of copper sheet 2 x 35 lm. 3. Cables L2 and L21 are soldered .. Tags: 222280905001* datasheet abstract.. |
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First line: MOS-1560-119 Abstract: .. %LM-4C9. 1+8+67/ ;4. &&&&+,&H?/C& N,,&7,&O,<HP. NOTES: +,&H?/C&?&CH7&1+&+1Q&H?C&/?,<,+? C .. % . 2222. % -2: :2%% :2. :2 2.- : $% .-. - -- .. % -% - .2 % $ :-. -% . :2: 2-$ $- .-- 22 --. .$ - :- .% : -- 2. :% -% 2 .. Tags: MOS-1560-119 datasheet abstract.. |
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First line: MCA210 ca212* philips Fxc 3 b mml 600 transistor tt 2222 PHILIPS/DISCRETE bbS3T31 OGi^GaE BLV38 bbS3131 LINER PUSH-PULL POWER TRNSISTOR Push-pull silicon planar epitaxial transistor primarily intended linear television transmitters (vision sound amplifiers). Internally matched input wideband operati Abstract: .. no. 2222 809 05503 . C5 =C7 = 470 pF 500 V * and 10 nF 50 V multilayer ceramic chip capacitors .. ,lm. The circuit and the components are on one side of the printed-circuit board, the other side .. Tags: transistor tt 2222 mml 600 philips Fxc 3 b ca212* MCA210 datasheet abstract.. |
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First line: AUER PHILIPS/DISCRETE bbSB'm 005^131 BLV91/SL POWER TRANSISTOR silicon planar epitaxial transistor designed mobile radio transmitters band. diffused emitter-ballasting resistors optimum temperature profile. gold metallization ensures excellent reliability. device applied rated load power, without ex Abstract: .. no. 2222 809 05001} L8 = Ferroxcube wideband HF choke, grade 3B cat. no. 4312 020 36642 60 nH; 4 .. .2 ; thickness 1/32 inch; thickness of copper-sheet 2 x 35 J.lm. American Technical Ceramics .. Tags: datasheet abstract.. |
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First line: IF 1017 PL580-30 38MHz-640MHz Phase Noise VCXO Abstract: .. Die ID: 2222-22A. C502A. Phase Detector. Charge Pump Loop Filter. VCO FXiNx16 VCO Divider. XTAL .. 4 LM 587 109 Performance/Frequency tuning Inductor. 5 DNC 702 109 Do No Connect. 6 DNC 874 109 Do .. Tags: IF 1017 PL580-30 |
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First line: hp 2222 tt 2222 Datasheet equivalent for transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWH629T1S0R0S1 [Rank (S0), (R0), (S1)] Abstract: .. H HN N N NN N N NW W W WH H H H666622229999T TT T1111S S S S0000R R R R0000S S S S1111 2222 //// 11118888 .. S1 ΦV IF = 180 mA 90 115 150 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ .. Tags: equivalent for transistor tt 2222 hp 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 S 3250 datasheet abstract.. |
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First line: tt 2222 Datasheet transistor tt 2222 equivalent for transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWW629T1S0S0S0 [Rank (S0), (S0), (S0)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WW W W W666622229999T TT T1111S S S S0000S S S S0000S S S S0000 2222 .. S0 ΦV IF = 180 mA 80 113 150 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ .. Tags: equivalent for transistor tt 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 datasheet abstract.. |
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First line: tt 2222 Datasheet equivalent for transistor tt 2222 TT 2222 s2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWW629T0S0S0S2 [Rank (S0), (S0), (S2)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WW W W W666622229999T TT T0000S S S S0000S S S S0000S S S S2222 2222 .. 100 148 180 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ. 94 lm/W @120 .. Tags: equivalent for transistor tt 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 s2222 datasheet abstract.. |
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First line: transistor tt 2222 equivalent for transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWW629T0S0U0S2 [Rank (S0), (U0), (S2)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WW W W W666622229999T TT T0000S S S S0000U U U U0000S S S S2222 2222 .. 100 132 180 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ. 84 lm/W @120 .. Tags: equivalent for transistor tt 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 s2222 datasheet abstract.. |
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First line: transistor tt 2222 DATASHEET tt 2222 Datasheet equivalent for transistor tt 2222 transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWW629T1S0T0S0 [Rank (S0), (T0), (S0)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WW W W W666622229999T TT T1111S S S S0000T TT T0000S S S S0000 2222 .. S0 ΦV IF = 180 mA 80 108 150 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ .. Tags: equivalent for transistor tt 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 datasheet abstract.. |
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First line: equivalent for transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWH629T1S0Q0S1 [Rank (S0), (Q0), (S1)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WH H H H666622229999T TT T1111S S S S0000Q Q Q Q0000S S S S1111 2222 .. S1 ΦV IF = 180 mA 90 113 150 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ .. Tags: equivalent for transistor tt 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 S 3250 datasheet abstract.. |
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First line: TT 2222 equivalent for transistor tt 2222 tt 2222 Datasheet transistor TT 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWW629T0S0T0S2 [Rank (S0), (T0), (S2)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WW W W W666622229999T TT T0000S S S S0000T TT T0000S S S S2222 2222 .. 100 142 180 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ. 90 lm/W @120 .. Tags: equivalent for transistor tt 2222 TT 2222Â tt 2222 Datasheet TT 2222 TT 220 transistor tt 2222 s2222 datasheet abstract.. |
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First line: tt 2222 Datasheet equivalent for transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWH629T0S0Q0S3 [Rank (S0), (Q0), (S3)] Abstract: .. 2222 //// 11118888 S S S SLLLLH H H HN N N NN N N NW W W WH H H H666622229999T TT T0000S S S S0000Q Q Q .. 120 150 180 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ. 96 lm/W @120 .. Tags: equivalent for transistor tt 2222 tt 2222 Datasheet TT 2222 transistor tt 2222 S 3250 datasheet abstract.. |
779.14 Kb |
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First line: TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWW629T1S0U0S0 [Rank (S0), (U0), (S0)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WW W W W666622229999T TT T1111S S S S0000U U U U0000S S S S0000 2222 .. S0 ΦV IF = 180 mA 80 97 150 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ. 62 .. Tags: tt 2222 Datasheet TT 2222 transistor tt 2222 datasheet abstract.. |
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First line: transistor tt 2222 TT 2222 ISSUE DATE ISSUE 2009. MODEL SLHNNWH629T0S0R0S3 [Rank (S0), (R0), (S3)] Abstract: .. S S S SLLLLH H H HN N N NN N N NW W W WH H H H666622229999T TT T0000S S S S0000R R R R0000S S S S3333 2222 .. 120 152 180 lm. ※ Tolerance : VF : ±0.1, ΦV : ±10 %, CCx CCy : ±0.02 ※ Luminous Flux : Typ. 97 lm/W @120 .. Tags: tt 2222 Datasheet TT 2222 transistor tt 2222 S 3250 datasheet abstract.. |
779.48 Kb |
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