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KRFR9310
Top Searches for this datasheetsmd 1a 400v diode - smd 1a 400v diode P-Channel mosfet 400v - P-Channel mosfet 400v KRFR9310 - KRFR9310 HEXFET Power MOSFET KRFR9310 Transistors TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: Features Surface Mount +0.2 9.70-0.2 Fast Switching P-Channel Avanced Process Technology Fully Avalanche Rated +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 +0.15 4.60-0.15 +0.1 0.60-0.1 Gate Drain Source Absolute Maximum Ratings Parameter Continuous Drain Current, -10V,Tc Continuous Drain Current, -10V,Tc Pulsed Drain Current*1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Junction-to-Case Junction-to-Ambient Junction-to-Ambient dv/dt TJ,TSTG Symbol Rating -1.8 -1.1 -7.2 -1.8 Unit V/ns Repetitive rating; pulse width limited max. junction temperature. -1.1A, di/dt 450A/ V(BR)DSS,TJ Starting mH,RG -1.8A. 3.80 www.kexin.com.cn KRFR9310 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance td(on) td(off) Symbol V(BR)DSS V(BR)DSS/ Transistors Testconditons -1mA,Reference -10V, -1.1A*1 VGS, -250 -50V, -1.1A*1 -400V, -320V, -400 Unit -0.41 -2.0 0.91 -100 -500 -100 -4.0 RDS(on) VGS(th) IDSS IGSS -20V -1.1A -320V -10V,*1 -200V -1.1A =180 Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Pulse width duty cycle Body Diode) Ciss Coss Crss -1.1A, 0V*1 -1.1A di/dt 100A/ -25V 1.0MHz -1.8 Body Diode) -7.2 -4.0 Intrinsic turn-on time negligible (turn-on dominated LS+LD) Repetitive rating; pulse width limited bymax www.kexin.com.cn Other recent searchesST95041 - ST95041 ST95041 Datasheet MS52C182A - MS52C182A MS52C182A Datasheet LK404-AT - LK404-AT LK404-AT Datasheet LK404-AT - LK404-AT LK404-AT Datasheet H103CGD - H103CGD H103CGD Datasheet BUZ905P - BUZ905P BUZ905P Datasheet BUZ906P - BUZ906P BUZ906P Datasheet
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