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KRFR9310


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smd 1a 400v diode - smd 1a 400v diode  
P-Channel mosfet 400v - P-Channel mosfet 400v  
KRFR9310 - KRFR9310  

HEXFET Power MOSFET KRFR9310
Transistors
TO-252
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7
Unit:
Features
Surface Mount
+0.2 9.70-0.2
Fast Switching P-Channel Avanced Process Technology Fully Avalanche Rated
+0.1 0.80-0.1
+0.15 0.50-0.15
0.127
+0.28 1.50-0.1
+0.25 2.65-0.1
+0.15 5.55-0.15
+0.15 4.60-0.15
+0.1 0.60-0.1
Gate Drain Source
Absolute Maximum Ratings
Parameter Continuous Drain Current, -10V,Tc Continuous Drain Current, -10V,Tc Pulsed Drain Current*1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Junction-to-Case Junction-to-Ambient Junction-to-Ambient dv/dt TJ,TSTG
Symbol
Rating -1.8 -1.1 -7.2 -1.8
Unit
V/ns
Repetitive rating; pulse width limited max. junction temperature. -1.1A, di/dt 450A/ V(BR)DSS,TJ
Starting mH,RG -1.8A.
3.80
www.kexin.com.cn
KRFR9310
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance td(on) td(off) Symbol V(BR)DSS
V(BR)DSS/
Transistors
Testconditons -1mA,Reference -10V, -1.1A*1 VGS, -250 -50V, -1.1A*1 -400V, -320V,
-400
Unit
-0.41 -2.0 0.91 -100 -500 -100 -4.0
RDS(on) VGS(th) IDSS
IGSS
-20V -1.1A -320V -10V,*1 -200V -1.1A =180
Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Pulse width duty cycle Body Diode)
Ciss Coss Crss -1.1A, 0V*1 -1.1A di/dt 100A/ -25V 1.0MHz
-1.8
Body Diode) -7.2 -4.0
Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited bymax
www.kexin.com.cn

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